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Vishay Siliconix SIRA22DP-T1-RE3
- Part No.:
- SIRA22DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA22DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,793
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Product details
Overview
SIRA22DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 Single package, delivering RDS(on) = 0.00076 Ω at VGS = 10 V and 0.00117 Ω at VGS = 4.5 V, with 45.5 nC typical total gate charge and 60 A continuous drain current (TJ = 150 °C). It serves as a high-efficiency synchronous rectifier in DC/DC converters.
For engineers reviewing the SIRA22DP-T1-RE3 datasheet, SIRA22DP-T1-RE3 pinout, SIRA22DP-T1-RE3 application, or SIRA22DP-T1-RE3 equivalent, this page provides verified electrical parameters, thermal resistance data (RthJC = 1.2 °C/W), body diode characteristics (VSD = 0.71 V at IS = 5 A), avalanche rating (EAS = 125 mJ), and layout-critical package dimensions for PowerPAK SO-8.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to optimize Qg, Qgd, and Qgd/Qgs ratio-reducing switching losses in high-frequency synchronous buck topologies. Its low RDS(on) and fast switching (tr = 25 ns, tf = 11 ns at VGEN = 10 V) support high power density designs.
The device features 100 % Rg and UIS testing, operates across -55 °C to +150 °C junction temperature range, and uses a leadless PowerPAK SO-8 package with exposed copper drain pads on the bottom side for enhanced thermal conduction to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; defines safe operation in ≤25 V rail systems. |
| RDS(on) @ 10 V | 0.00076 Ω - Enables <1.2 W conduction loss at 60 A, critical for high-current synchronous rectification. |
| RDS(on) @ 4.5 V | 0.00117 Ω - Ensures robust turn-on with 4.5 V gate drive, compatible with standard logic-level controllers. |
| Qg typ. | 45.5 nC - Low gate charge reduces driver power demand and enables efficient 500 kHz–1 MHz switching. |
| ID cont. (TJ = 150 °C) | 60 A - Continuous current rating under worst-case thermal conditions; validated with 1" × 1" FR4 board. |
| RthJC | 1.2 °C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper or external thermal pad. |
| EAS | 125 mJ - Single-pulse avalanche energy rating supports robustness against inductive switching transients. |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless surface-mount package with exposed copper drain terminals on bottom side; 5.15 mm × 6.15 mm footprint; 1.04 mm nominal height; designed for high-current, low-inductance PCB mounting with thermal enhancement via soldered drain pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed copper drain pads on bottom side provide low-thermal-resistance path to PCB copper pour. |
| G (Gate) | Gate (G) | Single gate terminal (Pin 1 top view per datasheet diagram); optimized for low-Qgd to minimize Miller effect. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Enables ultra-low RDS(on) and optimized Qgd/Qgs ratio for reduced switching loss in high-frequency DC/DC converters. |
| 100 % Rg tested | Guarantees gate resistance ≤0.9 Ω, ensuring predictable gate drive timing and minimizing oscillation risk. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 125 mJ, improving system reliability. |
| PowerPAK SO-8 thermal design | Exposed drain copper on bottom side delivers RthJC = 1.2 °C/W, enabling >80 W dissipation with minimal PCB heatsinking. |
| Body diode performance | VSD = 0.71 V (typ.) at 5 A and trr = 52 ns enable efficient reverse recovery in synchronous rectifier mode. |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
|
Use Scenario: Primary high-side or secondary low-side switch in 12 V input → 1.0–3.3 V output point-of-load converters operating at 500 kHz–2 MHz. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss. Use Value: Achieves >95 % efficiency at 60 A load due to RDS(on) = 0.00117 Ω at 4.5 V gate drive and fast body diode recovery (trr = 52 ns). |
Use Scenario: Output stage switch in compact 50–100 W isolated/non-isolated DC/DC modules for telecom and server power supplies. IC Role / Device Role: High-current, low-RDS(on) MOSFET handling peak currents up to 400 A pulsed in multi-phase configurations. Use Value: Supports >100 A/in² power density using PowerPAK SO-8's four-drain-pad thermal interface and 60 A continuous rating. |
| Load Switching in Industrial PLCs | Synchronous Rectification in USB PD Adapters |
|
Use Scenario: Hot-swap and inrush-controlled 24 V load switching for I/O modules and sensor interfaces in programmable logic controllers. IC Role / Device Role: Single N-channel load switch with integrated current limiting and thermal shutdown capability. Use Value: Delivers 60 A steady-state current with 125 mJ avalanche energy margin, eliminating need for external TVS during inductive load disconnection. |
Use Scenario: Secondary-side synchronous rectifier in 65–100 W USB Power Delivery adapters converting 20 V input to 5/9/15/20 V outputs. IC Role / Device Role: Efficient replacement of 40 V Schottky diodes in LLC or flyback topologies with tight VDS margin. Use Value: Reduces rectifier loss by >40 % vs. diode solution due to 0.00076 Ω RDS(on) at 10 V and low Qg enabling adaptive gate control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA24DP-T1-RE3 | RDS(on) = 0.00052 Ω @ 10 V (lower), but VDS = 30 V (higher); Qg = 52.5 nC (higher). | Better for 30 V systems requiring lower conduction loss; less optimal for strict 25 V rail where over-spec'd VDS adds cost and capacitance. | Select when higher VDS margin or lower RDS(on) justifies increased Qg and cost; not pin-compatible due to different die size in same package. |
| IRLHS6242PBF | RDS(on) = 0.0012 Ω @ 4.5 V (similar), but VDS = 30 V; Ciss = 5100 pF (vs. 7570 pF); no UIS rating specified. | Lower input capacitance improves EMI in noise-sensitive applications; lacks avalanche ruggedness validation. | Choose for cost-sensitive 30 V designs where avalanche immunity is not required; requires revalidation of gate drive and thermal layout. |
Compared with SiRA22DP-T1-RE3, SiRA24DP-T1-RE3 offers lower RDS(on) at the expense of higher Qg and overrated VDS, while IRLHS6242PBF trades off avalanche ruggedness and higher Ciss for reduced gate drive demand and cost-neither is pin-compatible nor drop-in.
Availability
SIRA22DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-density DC/DC modules, and industrial load switching applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SIRA22DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and thermal performance.
The PowerPAK® SO-8 MOSFET product line targets high-current, high-efficiency power conversion in space-constrained applications such as server VRMs, telecom PSUs, and USB-C PD adapters-designed for minimal PCB area and maximum thermal transfer.
FAQ
What is the maximum continuous drain current rating for SIRA22DP-T1-RE3?
The SIRA22DP-T1-RE3 has a continuous drain current (ID) rating of 60 A at TJ = 150 °C, validated under standard test conditions on a 1" × 1" FR4 board. This rating holds at both TC = 25 °C and TC = 70 °C per the Absolute Maximum Ratings table; derating applies above 70 °C ambient.
Does SIRA22DP-T1-RE3 support 4.5 V gate drive in synchronous rectifier applications?
Yes, the SIRA22DP-T1-RE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed ≤0.00117 Ω at VGS = 4.5 V and ID = 10 A, making it suitable for logic-level controllers and synchronous rectifier ICs with 4.5 V output. Its VGS(th) range (1.0–2.2 V) ensures reliable turn-on at this voltage.
What is the thermal resistance from junction to case (RthJC) for SIRA22DP-T1-RE3?
The SIRA22DP-T1-RE3 has a typical junction-to-case thermal resistance (RthJC) of 1.2 °C/W, with a maximum of 1.5 °C/W. This value applies to the drain-to-case path and is measured under steady-state conditions-enabling accurate thermal modeling when the device is mounted on a thermally enhanced PCB with adequate copper pour.
Is SIRA22DP-T1-RE3 rated for avalanche energy, and what is the value?
Yes, the SIRA22DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy (EAS) of 125 mJ at TJ = 25 °C, with IAS = 50 A and L = 0.1 mH. This rating confirms its ability to withstand transient inductive energy without failure in hard-switched topologies.
What package type does SIRA22DP-T1-RE3 use, and are there any PCB layout considerations?
The SIRA22DP-T1-RE3 uses the PowerPAK® SO-8 Single package-a leadless surface-mount variant with four exposed copper drain pads on the bottom side. Layout must follow Vishay's recommended minimum pads (Document 72599), avoid manual rework with soldering irons, and ensure full solder coverage of drain pads to leverage RthJC = 1.2 °C/W.
SIRA22DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.76mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7570 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA22DP-T1-RE3 FAQ
1.How can I place an order for SIRA22DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA22DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA22DP-T1-RE3 reliable?
The price and inventory of SIRA22DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA22DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIRA22DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA22DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA22DP-T1-RE3?
SIRA22DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA22DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA22DP-T1-RE3?
For technical support, including SIRA22DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA22DP-T1-RE3 requirements.
6.How does Aetrix verify that SIRA22DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIRA22DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA22DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIRA22DP-T1-RE3?
All SIRA22DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA22DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA22DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIRA22DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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