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Vishay Siliconix SIRA26DP-T1-RE3
- Part No.:
- SIRA26DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA26DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,499
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Product details
Overview
SIRA26DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 Single package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 2.65 mΩ at VGS = 10 V and 3.90 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRA26DP-T1-RE3 datasheet, SIRA26DP-T1-RE3 pinout, SIRA26DP-T1-RE3 application, or SIRA26DP-T1-RE3 equivalent, key selection criteria include low gate charge (13.2 nC typ. at 4.5 V), robust UIS testing, 100 % Rg screening, thermal resistance RthJC of 2.3 °C/W, and compatibility with 4.5 V logic-level drive in compact high-power-density designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve optimized Qg, Qgd, and Qgd/Qgs ratio-reducing switching-related power loss in hard-switched topologies. Its 25 V VDS rating and 2.65 mΩ RDS(on) support high-current, low-voltage synchronous buck stages where conduction and switching losses must both be minimized.
The device features a fully characterized body diode with trr = 29 ns (typ.), Qrr = 16 nC (typ.), and VSD = 0.75 V (typ. at IS = 5 A), enabling reliable reverse recovery in synchronous rectifier operation. Thermal design is supported by RthJC = 2.3 °C/W (typ.) and RthJA = 24 °C/W (typ., t ≤ 10 s) on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for low-voltage synchronous rectifier and load switch applications |
| RDS(on) @ 10 V | 2.65 mΩ max - Enables <1 W conduction loss at 60 A, critical for high-current DC/DC output stages |
| RDS(on) @ 4.5 V | 3.90 mΩ max - Ensures full enhancement with standard 4.5 V gate drivers, eliminating need for level-shifting |
| Qg @ 4.5 V | 13.2 nC typ. - Low gate charge reduces driver power and enables high-frequency PWM operation up to 1 MHz |
| ID (continuous) | 60 A @ TC = 25 °C - Supports high-current power delivery in server VRMs and telecom POL converters |
| RthJC | 2.3 °C/W typ. - Allows direct heatsinking to PCB copper or external heatsink for thermal management in >100 W designs |
| Body diode trr | 29 ns typ. - Fast recovery minimizes shoot-through risk and switching loss during dead-time transitions |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless surface-mount package with exposed drain paddle for enhanced thermal performance; dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to exposed bottom paddle; primary thermal path to PCB copper |
| G (Pin 1 side marker) | Gate (G) | Single gate terminal located adjacent to source; optimized layout minimizes gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS(on) × Qg figure-of-merit in 25 V class, directly reducing total switching + conduction loss |
| Optimized Qgd/Qgs ratio | Improves Miller immunity and enables stable operation with fast gate drivers without external gate resistors |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress |
| Exposed drain paddle | Provides low-inductance, low-thermal-resistance path to PCB ground plane-critical for EMI control and thermal reliability |
| Lead (Pb)-free & halogen-free | Meets IPC/JEDEC J-STD-609 Class 1 moisture sensitivity and RoHS/REACH compliance for global manufacturing |
Applications
| Synchronous Rectifier in Isolated DC/DC | High-Density POL Converter |
|---|---|
Use Scenario: Secondary-side rectification in 48 V–12 V isolated flyback or forward converters for datacom and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, enabling >95 % efficiency at 40 A output with minimal thermal margin. |
Use Scenario: Output stage in multiphase 12 V–0.8 V point-of-load converters powering FPGAs and ASICs in edge servers. IC Role / Device Role / Timing Role: High-current power switch in interleaved buck phase leg; operated at 500 kHz–1 MHz with precise dead-time control. Use Value: Low RDS(on) and Qg minimize both conduction and switching loss, allowing 60 A per phase in 10 mm × 10 mm footprint. |
| Synchronous Buck Converter Top Switch | Hot-Swap / Load Switch |
Use Scenario: High-side switch in non-isolated 12 V input buck regulators for industrial PLC I/O modules. IC Role / Device Role / Timing Role: N-channel high-side switch with integrated bootstrap gate driver; operates in hard-switched mode with 100 ns dead time. Use Value: 25 V rating and 3.90 mΩ RDS(on) at 4.5 V enable efficient 12 V–3.3 V conversion without external level shifter or P-channel alternative. |
Use Scenario: Inrush-limited 5 V/12 V load switch for USB-C PD ports and hot-pluggable peripheral bays. IC Role / Device Role / Timing Role: Single N-channel load switch with controlled turn-on via gate resistor; no external driver required. Use Value: Low threshold (VGS(th) = 1–2.5 V) and 60 A rating support fast, low-loss turn-on with minimal gate drive overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242TRPBF | RDS(on) = 3.2 mΩ @ 4.5 V; Qg = 15.5 nC; PowerPAK® 1212-8 package; RthJC = 2.5 °C/W | Higher RDS(on) and Qg increase conduction and switching loss in >500 kHz designs | Preferred where board space allows larger 1212-8 footprint and thermal budget permits slightly higher loss |
| DMTH2006LPSQ-13 | RDS(on) = 2.8 mΩ @ 4.5 V; Qg = 12.8 nC; PowerDI™ 5060 package; RthJC = 2.7 °C/W | Lower thermal conductivity limits peak current handling in sustained 60 A operation | Selected when ultra-low-profile mounting (<0.8 mm height) is mandatory and thermal derating is acceptable |
Compared with SIRA26DP-T1-RE3, the IRLHS6242TRPBF trades lower cost for higher RDS(on) and thermal resistance, while DMTH2006LPSQ-13 offers similar Qg but reduced thermal headroom-making SIRA26DP-T1-RE3 optimal for thermally constrained, high-frequency, high-current synchronous rectification.
Availability
SIRA26DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and load switching applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and computing OEMs.
Supply support for SIRA26DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIRA26DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIRA26DP-T1-RE3 at 70 °C case temperature?
The SIRA26DP-T1-RE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints while maintaining junction temperature ≤150 °C under steady-state conditions with adequate heatsinking.
Does SIRA26DP-T1-RE3 require a gate driver with level-shifting capability?
No, SIRA26DP-T1-RE3 does not require level shifting: its gate threshold voltage (VGS(th)) ranges from 1 V to 2.5 V, and it achieves full enhancement with only 4.5 V gate drive (RDS(on) = 3.90 mΩ max). Standard 3.3 V or 5 V logic-level drivers can directly interface without additional circuitry.
How is thermal performance characterized for SIRA26DP-T1-RE3 in typical PCB layouts?
SIRA26DP-T1-RE3 thermal performance is specified with RthJA = 24 °C/W (typ.) for t ≤ 10 s on a 1" × 1" FR4 board, and RthJC = 2.3 °C/W (typ.) for direct drain-to-heatsink conduction. The exposed drain paddle must be soldered to ≥1 in² of 2-oz copper for optimal results.
Is SIRA26DP-T1-RE3 suitable for synchronous rectifier applications with reverse recovery stress?
Yes, SIRA26DP-T1-RE3 is explicitly qualified for synchronous rectification: its body diode has trr = 29 ns (typ.), Qrr = 16 nC (typ.), and VSD = 0.75 V (typ. at 5 A), enabling clean commutation with minimal voltage overshoot and reduced EMI in hard-switched topologies.
What packaging and compliance standards apply to SIRA26DP-T1-RE3?
SIRA26DP-T1-RE3 is supplied in tape-and-reel (T1) format, packaged in PowerPAK® SO-8 Single, and is lead (Pb)-free and halogen-free per Vishay specification. It meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006.
SIRA26DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2247 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA26DP-T1-RE3 FAQ
1.How can I place an order for SIRA26DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA26DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA26DP-T1-RE3 reliable?
The price and inventory of SIRA26DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA26DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIRA26DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA26DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA26DP-T1-RE3?
SIRA26DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA26DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA26DP-T1-RE3?
For technical support, including SIRA26DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA26DP-T1-RE3 requirements.
6.How does Aetrix verify that SIRA26DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIRA26DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA26DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIRA26DP-T1-RE3?
All SIRA26DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA26DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA26DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIRA26DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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