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Vishay Siliconix SIRA28BDP-T1-GE3
- Part No.:
- SIRA28BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA28BDP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 18A/38A PPAK SO8
- Quantity:
- Payment:
- Shipping:
Inventory:6,427
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Product details
Overview
SIRA28BDP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 38 A continuous drain current at TC = 25 °C, with RDS(on) of 7.5 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V, used as a high-efficiency synchronous rectifier in DC/DC converters.
For engineers reviewing the SIRA28BDP-T1-GE3 datasheet, SIRA28BDP-T1-GE3 pinout, SIRA28BDP-T1-GE3 application, or SIRA28BDP-T1-GE3 equivalent, key selection criteria include low gate charge (4.5 nC at 4.5 V), robust avalanche rating (10 A IAS, 5 mJ EAS), thermal resistance (RthJC = 5.5 °C/W), and leadless PowerPAK SO-8 footprint compatibility with high-power-density board layouts.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance: Qg = 4.5 nC (at VGS = 4.5 V), tr = 76 ns, and tf = 17 ns under 4.5 V gate drive. Its body diode exhibits trr = 15 ns and Qrr = 5 nC, enabling efficient synchronous rectification without external Schottky replacement.
The device operates across -55 °C to +150 °C junction temperature range and supports 100% Rg and UIS testing per production lot. Its PowerPAK SO-8 package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with maximum steady-state RthJA = 33 °C/W and RthJC = 7.2 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rail systems with margin. |
| RDS(on) @ 10 V | 7.5 mΩ - Enables <1 W conduction loss at 38 A; critical for VRM output stage efficiency. |
| RDS(on) @ 4.5 V | 12.0 mΩ - Ensures stable operation with 5 V or logic-level gate drivers in compact DC/DC designs. |
| Qg @ 4.5 V | 4.5 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in high-frequency converters. |
| ID (continuous) | 38 A @ TC = 25 °C - High current capability supports single-device solutions in 50–100 W point-of-load regulators. |
| EAS | 5 mJ - Avalanche energy rating allows reliable operation during transient overvoltage events without snubbers. |
| RthJC | 5.5 °C/W (typ.) - Enables direct heatsinking via PCB copper; supports >15 W dissipation with minimal thermal rise. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), compliant with JEDEC MO-229 standard. Bottom-side copper drain terminals provide primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed-copper drain pads on bottom side serve as thermal interface and high-current return path to ground plane. |
| G (top-side pad) | Gate (G) | Single top-side gate pad; requires controlled trace routing to minimize ringing and ensure clean 4.5 V switching edge. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 12.0 mΩ RDS(on) at 4.5 V gate drive-enables direct replacement of older SO-8 MOSFETs without gate driver upgrade. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<14 Ω max) and unclamped inductive switching robustness across all production lots. |
| Low Qgd/Qg ratio | Qgd = 1.2 nC / Qg = 4.5 nC → 27 % - Reduces Miller plateau time and improves hard-switching immunity. |
| Optimized body diode | trr = 15 ns, Qrr = 5 nC - Minimizes reverse recovery loss in synchronous buck converters operating above 300 kHz. |
| PowerPAK SO-8 thermal design | Exposed drain pad achieves RthJC = 5.5 °C/W - Allows >12 W continuous power dissipation with 2 oz. copper and 2-in² thermal pad. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency 12 V to 1.2 V conversion for CPU/GPU power delivery in rack-mounted servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500–1000 kHz with 4.5 V gate drive. Use Value: 7.5 mΩ RDS(on) at 10 V and 12.0 mΩ at 4.5 V minimizes conduction loss; 4.5 nC Qg enables fast turn-on with minimal driver overhead. |
Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O and sensor power rails. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in high-density flyback or buck converter. Use Value: 30 V VDS rating provides margin for 24 V systems with transients; PowerPAK SO-8 footprint supports compact layout without thermal vias. |
| Telecom PoE++ PSE | Automotive ADAS Power Supply |
Use Scenario: 57 V PoE++ power sourcing equipment (PSE) with integrated DC/DC regulation for 90 W delivery. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active clamp forward or LLC resonant converter. Use Value: 10 A IAS and 5 mJ EAS withstand inductive kickback during hot-swap events; 150 °C TJ(max) supports sealed enclosure operation. |
Use Scenario: 12 V battery-fed 5 V/3.3 V power supply for radar ECU, camera module, or domain controller. IC Role / Device Role / Timing Role: High-side or low-side switch in pre-regulator or post-regulator stage; operates in -40 °C to +125 °C ambient. Use Value: -55 °C to +150 °C TJ range ensures reliability in under-hood environments; 100 % UIS tested for load dump immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PbF | RDS(on) = 11.5 mΩ @ 4.5 V; Qg = 5.8 nC; TO-252 package; higher RthJA (62 °C/W). | Requires larger PCB area and less effective thermal management than PowerPAK SO-8; not suitable for >500 kHz operation due to higher Qg. | Select when legacy TO-252 layout exists and frequency <300 kHz; avoid for space-constrained or high-frequency VRMs. |
| DMN3020LSD-13 | RDS(on) = 10.5 mΩ @ 4.5 V; Qg = 5.2 nC; dual SO-8 package; lower ID (20 A). | Lower current rating limits use to sub-30 W applications; dual configuration adds routing complexity for single-switch designs. | Prefer only for dual-switch topologies or where dual-channel integration offsets footprint penalty; insufficient for 38 A VRM loads. |
Compared with IRF7470PbF and DMN3020LSD-13, SIRA28BDP-T1-GE3 delivers superior power density via its 7.2 mm² PowerPAK SO-8 footprint, lowest Qg/RDS(on) ratio in class, and verified avalanche ruggedness-making it optimal for high-frequency, high-current synchronous rectification where thermal and layout constraints dominate.
Availability
SIRA28BDP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom PoE++ power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIRA28BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon technologies.
The SIRA28BDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification and DC/DC conversion in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current rating for SIRA28BDP-T1-GE3 at 70 °C case temperature?
The SIRA28BDP-T1-GE3 is rated for 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-power operation and must be validated against actual board-level thermal design using RthJC = 5.5 °C/W.
Does SIRA28BDP-T1-GE3 support 3.3 V gate drive in practical applications?
No-SIRA28BDP-T1-GE3 is not characterized for reliable operation below VGS = 4.5 V. Its RDS(on) is specified only at 4.5 V and 10 V, and VGS(th) ranges from 1.2 V to 2.4 V; 3.3 V gate drive risks incomplete enhancement and excessive conduction loss. Use only with ≥4.5 V logic or dedicated gate drivers.
How is thermal performance validated for SIRA28BDP-T1-GE3 in the PowerPAK SO-8 package?
Thermal performance of SIRA28BDP-T1-GE3 is validated per JEDEC JESD51 standards: RthJC = 5.5 °C/W (typ.) measured from junction to case (exposed drain pad), and RthJA = 25 °C/W (typ.) measured on 1" × 1" FR4 board with 2 oz. copper. The exposed drain pad must be soldered to a minimum 200 mm² thermal pad with ≥6 thermal vias for rated performance.
Is SIRA28BDP-T1-GE3 suitable for avalanche-prone circuits like inductive load switching?
Yes-SIRA28BDP-T1-GE3 is 100 % unclamped inductive switching (UIS) tested and rated for single-pulse avalanche energy EAS = 5 mJ and current IAS = 10 A. It is qualified for use in circuits with stored inductive energy, such as motor gate drives or relay snubbers, provided pulse conditions remain within datasheet limits.
What is the gate-to-source leakage specification for SIRA28BDP-T1-GE3 at maximum rated voltage?
At VGS = +20 V or -16 V and TJ = 25 °C, the gate-to-source leakage current IGSS for SIRA28BDP-T1-GE3 is guaranteed ≤ ±100 nA. This low leakage supports stable gate bias in high-impedance drive circuits and ensures minimal power loss in always-on configurations.
SIRA28BDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 582 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 17W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA28BDP-T1-GE3 FAQ
1.How can I place an order for SIRA28BDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA28BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA28BDP-T1-GE3 reliable?
The price and inventory of SIRA28BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA28BDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA28BDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA28BDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA28BDP-T1-GE3?
SIRA28BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA28BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA28BDP-T1-GE3?
For technical support, including SIRA28BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA28BDP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA28BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA28BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA28BDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA28BDP-T1-GE3?
All SIRA28BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA28BDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA28BDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA28BDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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