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Vishay Siliconix SIRA32DP-T1-RE3
- Part No.:
- SIRA32DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA32DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,032
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Product details
Overview
SIRA32DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 185 A continuous drain current at TC = 25 °C, with RDS(on) of 1.20 mΩ at VGS = 10 V and 1.83 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRA32DP-T1-RE3 datasheet, SIRA32DP-T1-RE3 pinout, SIRA32DP-T1-RE3 application, or SIRA32DP-T1-RE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.6 °C/W), gate charge (Qg = 24.3 nC typ. at 4.5 V), body diode recovery (trr = 44 ns), UIS-tested ruggedness, and leadless PowerPAK SO-8 layout considerations.
Technical Context
This MOSFET employs trench-based silicon architecture to minimize conduction and switching losses simultaneously. Its low Qgd/Qgs ratio (≈0.36 at VGS = 4.5 V) and optimized gate charge profile enable fast, controlled turn-on/turn-off transitions in high-frequency synchronous buck stages.
The device integrates a robust intrinsic body diode with VSD = 0.73 V (typ.) at IS = 5 A and Qrr = 39 nC, supporting efficient reverse recovery in hard-switched and ZVS topologies. Thermal design is anchored by a low junction-to-case resistance (1.6 °C/W) and validated 100% UIS testing per JEDEC JESD22-A115.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems. |
| RDS(on) @ 10 V | 1.20 mΩ - Enables <1.2 W conduction loss at 100 A, critical for >95 % efficiency in high-current POL converters. |
| RDS(on) @ 4.5 V | 1.83 mΩ - Ensures reliable enhancement-mode operation with 5 V gate drive, supporting standard logic-level controllers. |
| Qg (4.5 V) | 24.3 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching without excessive gate loss. |
| ID (TC = 25 °C) | 185 A - Continuous current rating defined under heatsink-mounted conditions, suitable for single-phase VRMs up to 300 W. |
| RthJC | 1.6 °C/W - Confirmed junction-to-case thermal resistance supports direct thermal interface to copper planes or heatsinks. |
| trr | 44 ns - Body diode reverse recovery time measured at IF = 10 A, di/dt = 100 A/μs, enabling stable operation in synchronous rectifier mode. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, surface-mount, 5.15 mm × 6.15 mm footprint). Exposed drain paddle on bottom side provides primary thermal path; no solder fillet required at copper tip per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain pads connected to internal die drain metallization; primary thermal and current return path to PCB ground plane. |
| G (Pin 1 top-side marking) | Gate (G) | Single gate terminal located at corner; requires controlled impedance routing to minimize ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers lowest RDS(on) × Qg figure-of-merit in 25 V class, reducing combined conduction and switching loss. |
| 100 % UIS tested | Guarantees avalanche energy handling (EAS = 45 mJ) without derating, essential for unregulated input or transient overload conditions. |
| Optimized Qgd/Qgs ratio | Ratio ≈ 0.36 at 4.5 V ensures soft switching behavior and reduced voltage overshoot during turn-off in synchronous rectifiers. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912). |
| PowerPAK SO-8 package | 0.97 mm height enables ultra-low-profile board designs; exposed drain improves thermal performance over SO-8 with leads. |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
|
Use Scenario: Primary high-side or synchronous rectifier switch in 12 V–24 V input, 0.8 V–5 V output point-of-load converters operating at 300 kHz–1 MHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to eliminate forward voltage drop and associated conduction loss. Use Value: Achieves >1.5 % efficiency gain over 3 mΩ alternatives at 100 A load due to 1.20 mΩ RDS(on) and low Qrr-induced switching loss. |
Use Scenario: Current-doubling or multiphase interleaved DC/DC modules for AI accelerators and telecom baseband units requiring >200 A per rail. IC Role / Device Role / Timing Role: High-current power stage switch with paralleled devices, leveraging four-source/four-drain terminals for balanced current distribution. Use Value: Enables compact 12 mm × 12 mm module footprint while maintaining TJ < 110 °C at full load via 1.6 °C/W RthJC and low RDS(on). |
| Synchronous Rectification | Load Switching |
|
Use Scenario: Secondary-side rectification in isolated 48 V–12 V intermediate bus converters used in server PSUs and OCP-compliant power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET driven by transformer-coupled or active gate control, operating in discontinuous or continuous conduction mode. Use Value: Reduces rectifier loss by >60 % vs. 40 V Schottky diodes, directly improving full-load efficiency from 93.2 % to 94.9 % in 1 kW designs. |
Use Scenario: Hot-swap and inrush current limiting in industrial PLC backplanes and redundant power distribution units. IC Role / Device Role / Timing Role: Low-RDS(on) load switch controlling 12 V/24 V system rails, with integrated body diode supporting bidirectional current flow during fault events. Use Value: Limits inrush peak to <150 A using gate slew-rate control, while sustaining 148 A continuous at TC = 70 °C without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 1.35 mΩ @ 4.5 V; Qg = 27.5 nC; PowerPAK 1212-8 package (same footprint but taller: 1.05 mm). | Higher gate charge increases driver loss at >1 MHz; slightly higher RDS(on) raises conduction loss by ~12 % at 100 A. | Preferred where legacy layout uses 1212-8 and thermal margin allows minor efficiency trade-off. |
| DMTH3010LPSQ-13 | RDS(on) = 1.15 mΩ @ 4.5 V; Qg = 22.5 nC; PowerDI™ 5060 package (5.0 mm × 6.0 mm, 0.95 mm height); AEC-Q101 qualified. | Lower Qg improves high-frequency efficiency; automotive qualification adds cost and test overhead not needed for industrial use. | Select when AEC-Q101 compliance is mandatory or when 0.05 mm lower height is critical for mechanical stack-up. |
Compared with IRLHS6342TRPBF and DMTH3010LPSQ-13, SIRA32DP-T1-RE3 offers the best balance of low RDS(on) × Qg product (2.2 mΩ·nC), industry-standard PowerPAK SO-8 compatibility, and non-automotive cost structure-making it optimal for high-volume industrial and computing DC/DC designs.
Availability
SIRA32DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-density DC/DC modules, and load switching applications requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.
Supply support for SIRA32DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability silicon solutions.
The SIRA32DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion in computing, telecom, and industrial power supplies where low RDS(on) and fast switching are critical.
FAQ
What is the maximum continuous drain current rating for SIRA32DP-T1-RE3 at TC = 70 °C?
The SIRA32DP-T1-RE3 is rated for 148 A continuous drain current when case temperature (TC) is maintained at 70 °C. This value is derived from thermal derating curves in the datasheet and assumes proper PCB copper area and thermal vias to sustain the specified junction-to-case thermal resistance of 1.6 °C/W. At ambient conditions, the rating drops to 40.8 A due to higher junction-to-ambient resistance.
Does SIRA32DP-T1-RE3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?
Yes, SIRA32DP-T1-RE3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing and control dV/dt during switching. The device's low gate resistance (Rg = 0.75 Ω typ.) and 24.3 nC gate charge at 4.5 V make it susceptible to oscillation without proper gate drive impedance matching, especially when paired with high-speed controllers like the MP2960 or UCC27531.
Is SIRA32DP-T1-RE3 suitable for use as a high-side switch in a floating-gate configuration?
No, SIRA32DP-T1-RE3 is not recommended as a high-side switch without level-shifting gate drive. It is an N-channel MOSFET with a maximum VGS rating of +16 V / –12 V and no integrated bootstrap circuitry. For high-side operation, a dedicated high-side driver (e.g., IRS2007) or P-channel alternative must be used-SIRA32DP-T1-RE3 is optimized for low-side or synchronous rectifier roles where source is near ground potential.
How does the body diode performance of SIRA32DP-T1-RE3 compare to Schottky diodes in synchronous rectification?
The SIRA32DP-T1-RE3 body diode has VSD = 0.73 V (typ.) at 5 A and trr = 44 ns, which is slower and higher-VF than most 45 V Schottky diodes (VF ≈ 0.45 V, trr negligible). However, in synchronous rectifier mode, the body diode conducts only briefly during dead-time; the dominant benefit comes from eliminating forward conduction loss entirely when the MOSFET channel is actively driven-making SIRA32DP-T1-RE3 superior overall in efficiency-critical applications.
Can SIRA32DP-T1-RE3 be reworked using hot-air station without damage?
No-manual soldering with a soldering iron is explicitly not recommended for SIRA32DP-T1-RE3 per Vishay's documentation (note "e"). Rework requires precision hot-air profiling per JEDEC J-STD-020, with peak temperature ≤ 260 °C and strict time-above-liquidus control. Improper rework risks delamination of the leadless PowerPAK SO-8 package or thermal damage to the silicon die due to its low thermal mass and exposed copper paddle.
SIRA32DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 83 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA32DP-T1-RE3 FAQ
1.How can I place an order for SIRA32DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA32DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA32DP-T1-RE3 reliable?
The price and inventory of SIRA32DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA32DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIRA32DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA32DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA32DP-T1-RE3?
SIRA32DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA32DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA32DP-T1-RE3?
For technical support, including SIRA32DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA32DP-T1-RE3 requirements.
6.How does Aetrix verify that SIRA32DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIRA32DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA32DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIRA32DP-T1-RE3?
All SIRA32DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA32DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA32DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIRA32DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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