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Vishay Siliconix SIRA34DP-T1-GE3
- Part No.:
- SIRA34DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA34DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,040
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Product details
Overview
SIRA34DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV Power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 6.7 mΩ at VGS = 10 V and 9.8 mΩ at VGS = 4.5 V, used in high-efficiency DC/DC converters and battery protection circuits.
For engineers reviewing the SIRA34DP-T1-GE3 datasheet, SIRA34DP-T1-GE3 pinout, SIRA34DP-T1-GE3 application, or SIRA34DP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, thermal performance under 70 °C/W junction-to-ambient, and compatibility with leadless reflow profiles for PowerPAK SO-8 mounting.
Technical Context
This MOSFET employs trench-based silicon architecture optimized for low conduction and switching losses in synchronous buck stages and load-switching nodes. Its gate charge profile (Qg = 8 nC typ. at VGS = 4.5 V) supports efficient operation with standard PWM controllers and gate drivers.
The device features a robust body diode with trr = 22–44 ns and Qrr = 11–22 nC, enabling reliable reverse recovery in bidirectional power paths. Thermal design is constrained by RthJC = 3.2 °C/W (typ.) and package-limited power dissipation of 31.25 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 30 V - Supports 24 V nominal bus systems with 20 % margin against transients |
| RDS(on) (Max) | 6.7 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 20 A continuous current |
| ID (Cont) | 40 A at TC = 25 °C - Requires heatsinking or board copper area to sustain full rating |
| Qg (Typ) | 8 nC at VGS = 4.5 V - Reduces gate drive power and enables fast turn-on with low-side driver ICs |
| RthJC (Typ) | 3.2 °C/W - Allows direct thermal coupling to PCB copper or heatsink for high-power density designs |
| VGS(th) | 1.1–2.4 V - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V logic-level gate signals |
| Body Diode VSD | 0.77–1.1 V at IS = 5 A - Minimizes forward conduction loss during freewheeling in synchronous rectification |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package measuring 6.15 mm × 5.15 mm with exposed drain paddle on bottom side for enhanced thermal performance. The package uses copper substrate construction and requires controlled reflow per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; tied to power ground plane; electrically connected to internal source metallization |
| 2 (S) | Source | Parallel source connection for reduced resistance and inductance in high-current paths |
| 3 (S) | Source | Third source terminal supporting low-inductance layout for high-frequency switching |
| 4 (G) | Gate | Control input; requires low-impedance drive path to minimize switching losses and ringing |
| 5 (D) | Drain | High-side power input node; connected to exposed copper paddle for thermal and electrical conduction |
| 6 (D) | Drain | Second drain terminal sharing same internal connection to paddle; improves current distribution |
| 7 (D) | Drain | Third drain terminal enhancing thermal transfer and reducing package inductance |
| 8 (D) | Drain | Fourth drain terminal completing quad-drain configuration for optimal power handling |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 30 % lower RDS(on) × Qg figure-of-merit vs. prior generation, improving efficiency in 500 kHz–1 MHz DC/DC stages |
| 100 % Rg and UIS tested | Ensures gate robustness against voltage spikes and avalanche energy tolerance up to 5 mJ per pulse |
| Lead (Pb)-free and Halogen-free | Meets JEDEC JS709A and RoHS Directive 2011/65/EU requirements without compromising thermal or electrical performance |
| PowerPAK® SO-8 package | Provides 2× lower RthJA than standard SO-8 and eliminates lead coplanarity issues in automated assembly |
| Low VGS(th) variation | ±0.2 V typical threshold spread enables predictable turn-on timing across production lots in parallel configurations |
Applications
| DC/DC Converter Primary Switch | Battery Protection FET |
|---|---|
Use Scenario: High-current synchronous buck converter in telecom power supply delivering 12 V @ 25 A from 48 V input. IC Role / Device Role / Timing Role: High-side power switch operating at 600 kHz with 100 ns dead-time control. Use Value: 6.7 mΩ RDS(on) limits conduction loss to ≤1.7 W; low Qg enables clean 10 ns rise time with minimal gate drive power. |
Use Scenario: Overcurrent and short-circuit protection in 3-cell Li-ion battery pack (12.6 V max). IC Role / Device Role / Timing Role: Bidirectional load switch controlling discharge path between battery and system load. Use Value: Body diode VSD ≤1.1 V ensures low-loss reverse conduction during cell balancing; 80 A pulsed rating handles fault currents. |
| Load Switch for Industrial PLC | Inverter Half-Bridge Leg |
Use Scenario: Controlled 24 V power delivery to I/O module with soft-start and inrush limiting. IC Role / Device Role / Timing Role: Low-side load switch activated via microcontroller GPIO with external gate resistor. Use Value: 1.1–2.4 V VGS(th) guarantees turn-on with 3.3 V logic; 40 A rating supports 500 ms surge loads up to 30 A. |
Use Scenario: Low-voltage motor drive inverter stage powering 24 V BLDC motor with 10 A RMS phase current. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology with bootstrap gate drive. Use Value: 22–44 ns trr and 11–22 nC Qrr reduce switching loss and EMI during commutation; 30 V rating covers back-EMF peaks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 12.5 mΩ @ 4.5 V; SO-8 package; 30 V rating; lower ID (4.3 A) | Targeted at low-power logic-level switching, not high-current DC/DC or battery protection | Select only for space-constrained sub-5 A loads where thermal budget permits higher RDS(on) |
| SIR872DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 10 V; same PowerPAK SO-8; 40 A rating; higher Qg (25 nC) | Optimized for ultra-low conduction loss in high-efficiency servers; less suitable for 4.5 V gate drive | Choose when gate drive voltage ≥10 V and lowest possible RDS(on) dominates over switching loss |
Compared with IRLML6344TRPBF, SIRA34DP-T1-GE3 delivers >2× higher current capability and 45 % lower RDS(on) at 4.5 V; versus SIR872DP-T1-GE3, it trades 55 % lower Qg for 125 % higher RDS(on), favoring medium-frequency, logic-level-driven applications.
Availability
SIRA34DP-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC conversion, battery protection, and industrial load switching requiring stable component supply, consistent parametric performance, and long-term manufacturing support.
Supply support for SIRA34DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiRA34DP product line targets high-current, logic-level switching in compact power systems, designed specifically for space-constrained DC/DC modules, portable battery packs, and industrial control interfaces.
FAQ
What is the maximum continuous drain current rating for SIRA34DP-T1-GE3 at 70 °C case temperature?
The SIRA34DP-T1-GE3 is rated for 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management using ≥1" × 1" FR4 copper area and accounts for derating due to junction temperature limits. The SIRA34DP-T1-GE3 maintains this current capability without package limitation at that temperature point.
Does SIRA34DP-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SIRA34DP-T1-GE3 has a gate threshold voltage range of 1.1–2.4 V and delivers RDS(on) = 9.8 mΩ at VGS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. While full-rated 40 A conduction requires higher VGS, the SIRA34DP-T1-GE3 achieves usable on-resistance and fast switching even at 3.3 V, validated by its 4.5 V test condition in the datasheet.
What is the thermal resistance from junction to case (RthJC) for SIRA34DP-T1-GE3?
The typical junction-to-case thermal resistance (RthJC) for SIRA34DP-T1-GE3 is 3.2 °C/W, with a maximum of 4.0 °C/W, measured from junction to the exposed drain paddle. This value enables accurate thermal modeling when the SIRA34DP-T1-GE3 is mounted on a thermally enhanced PCB layer or heatsink, and directly informs safe operating area calculations.
Is SIRA34DP-T1-GE3 suitable for synchronous rectification in DC/DC converters?
Yes, SIRA34DP-T1-GE3 is well-suited for synchronous rectification due to its low RDS(on) of 6.7 mΩ at 10 V and robust body diode with VSD = 0.77–1.1 V at 5 A. Its 22–44 ns reverse recovery time and 11–22 nC Qrr minimize switching loss and voltage overshoot during freewheeling, as confirmed in the Drain-Source Body Diode Characteristics section of the SIRA34DP-T1-GE3 datasheet.
What is the total gate charge (Qg) of SIRA34DP-T1-GE3 at 4.5 V gate drive?
The total gate charge (Qg) of SIRA34DP-T1-GE3 is 8 nC (typical) and 12 nC (maximum) when driven at VGS = 4.5 V, as specified under Dynamic parameters. This low Qg value reduces gate driver power consumption and enables faster switching transitions, which is critical for high-frequency DC/DC converters where the SIRA34DP-T1-GE3 is commonly deployed.
SIRA34DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 31.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA34DP-T1-GE3 FAQ
1.How can I place an order for SIRA34DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA34DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA34DP-T1-GE3 reliable?
The price and inventory of SIRA34DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA34DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA34DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA34DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA34DP-T1-GE3?
SIRA34DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA34DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA34DP-T1-GE3?
For technical support, including SIRA34DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA34DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA34DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA34DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA34DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA34DP-T1-GE3?
All SIRA34DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA34DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA34DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA34DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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