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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA36DP-T1-GE3

Name: SIRA36DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA36DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA36DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA36DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SIRA36DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with R_DS(on) of 2.8 mΩ at V_GS = 10 V and 4.2 mΩ at V_GS = 4.5 V, optimized for synchronous rectification in high-density DC/DC converters.

For engineers reviewing the SIRA36DP-T1-GE3 datasheet, SIRA36DP-T1-GE3 pinout, SIRA36DP-T1-GE3 application, or SIRA36DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 17.3 nC total gate charge, 100% R_g and UIS testing, and thermal resistance R_thJC of 2.2 °C/W for high-efficiency VRM output stages.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve ultra-low on-resistance and fast switching with Q_g = 17.3 nC (at V_GS = 4.5 V), enabling high-frequency operation in synchronous buck topologies. Its body diode exhibits t_rr = 33 ns and Q_rr = 22 nC, supporting efficient reverse recovery in hard-switched applications.

The device is characterized for stable performance across -55 °C to +150 °C junction temperature range, with V_GS(th) = 1.2–2.2 V and tight ΔV_GS(th)/T_J = -5 mV/°C, ensuring predictable turn-on behavior under thermal stress in embedded DC/DC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 12 V and 24 V input DC/DC systems
R_DS(on) @ 10 V	2.8 mΩ - Enables <1 W conduction loss at 20 A in high-current VRM phases
R_DS(on) @ 4.5 V	4.2 mΩ - Ensures robust operation with standard 5 V gate drivers in compact power supplies
Q_g	17.3 nC - Low gate charge reduces driver power and enables >1 MHz switching
I_D (cont.)	40 A @ T_C = 25 °C - Supports high-current output stages without forced air cooling
R_thJC	2.2 °C/W - Allows direct heatsink mounting for thermal management in space-constrained PCBs
t_rr	33 ns - Minimizes body diode switching loss during dead-time in synchronous rectifiers

Pinout & Package

PowerPAK® SO-8 single-channel leadless package with exposed drain paddle for enhanced thermal performance; 6.15 mm × 5.15 mm footprint; bottom-side copper terminals require controlled reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Exposed drain paddle and four top-side drain pins provide low-inductance, high-current path to PCB ground plane
G (Gate)	Control input	Single gate terminal located at Pin 1 edge position; requires <1 Ω gate resistor to dampen ringing due to low R_g = 0.9 Ω typ

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 30% lower R_DS(on) × Q_g figure-of-merit vs. prior generation for improved efficiency at 500 kHz–2 MHz
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 20 mJ
PowerPAK® SO-8 package	Reduces thermal resistance by 40% vs. standard SO-8, enabling 2× higher power density in VRM designs
Low V_GS(th) variation	ΔV_GS(th)/T_J = -5 mV/°C ensures stable turn-on timing across full operating temperature range
Optimized body diode	Q_rr = 22 nC and t_a + t_b = 33 ns minimize reverse recovery losses in synchronous rectifier mode

Applications

Server VRM Output Stage	High-Density Telecom DC/DC
Use Scenario: Primary high-side switch in multiphase 48 V–12 V buck converters powering CPU/GPU cores. IC Role / Device Role / Timing Role: High-current synchronous rectifier with 40 A continuous rating and 2.8 mΩ R_DS(on) at 10 V drive. Use Value: Reduces conduction loss by 35% vs. legacy 3.8 mΩ MOSFETs, lowering phase temperature rise by 12 °C at 30 A load.	Use Scenario: Secondary-side synchronous rectifier in isolated 48 V input telecom power modules. IC Role / Device Role / Timing Role: Low-V_GS threshold N-channel switch driven directly from transformer secondary winding. Use Value: 4.2 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 20 A output while eliminating external gate bias circuitry.
Industrial PLC Power Supply	Embedded GPU Power Delivery
Use Scenario: Input-stage switch in wide-input 18–36 V DC/DC for programmable logic controllers. IC Role / Device Role / Timing Role: Robust 30 V N-channel MOSFET with 20 mJ single-pulse avalanche rating for surge immunity. Use Value: Withstands 40 V load-dump transients without derating, eliminating need for TVS clamping in cost-sensitive industrial designs.	Use Scenario: Compact point-of-load regulator supplying 0.8–1.2 V to AI accelerator ASICs. IC Role / Device Role / Timing Role: High-frequency (1–3 MHz) synchronous rectifier with 17.3 nC Q_g and 33 ns t_rr. Use Value: Enables 25% smaller output inductor size and 18% lower ripple current vs. comparable 25 nC devices.

Server VRM Output Stage

High-Density Telecom DC/DC

Use Scenario: Primary high-side switch in multiphase 48 V–12 V buck converters powering CPU/GPU cores.

IC Role / Device Role / Timing Role: High-current synchronous rectifier with 40 A continuous rating and 2.8 mΩ R_DS(on) at 10 V drive.

Use Value: Reduces conduction loss by 35% vs. legacy 3.8 mΩ MOSFETs, lowering phase temperature rise by 12 °C at 30 A load.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V input telecom power modules.

IC Role / Device Role / Timing Role: Low-V_GS threshold N-channel switch driven directly from transformer secondary winding.

Use Value: 4.2 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 20 A output while eliminating external gate bias circuitry.

Industrial PLC Power Supply

Embedded GPU Power Delivery

Use Scenario: Input-stage switch in wide-input 18–36 V DC/DC for programmable logic controllers.

IC Role / Device Role / Timing Role: Robust 30 V N-channel MOSFET with 20 mJ single-pulse avalanche rating for surge immunity.

Use Value: Withstands 40 V load-dump transients without derating, eliminating need for TVS clamping in cost-sensitive industrial designs.

Use Scenario: Compact point-of-load regulator supplying 0.8–1.2 V to AI accelerator ASICs.

IC Role / Device Role / Timing Role: High-frequency (1–3 MHz) synchronous rectifier with 17.3 nC Q_g and 33 ns t_rr.

Use Value: Enables 25% smaller output inductor size and 18% lower ripple current vs. comparable 25 nC devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	Same PowerPAK SO-8 package; 30 V, 3.0 mΩ @ 10 V, 4.5 mΩ @ 4.5 V, Q_g = 15.2 nC	Lower gate charge but slightly higher R_DS(on); better for >2 MHz switching where Q_g dominates loss	Select SiR626DP-T1-GE3 when prioritizing switching loss over conduction loss in ultra-high-frequency designs
IRLHS6342TRPBF	SO-8 package; 30 V, 3.2 mΩ @ 10 V, 4.8 mΩ @ 4.5 V, Q_g = 19.5 nC, R_thJC = 3.0 °C/W	Higher thermal resistance and gate charge; less suitable for thermally constrained VRMs	Choose IRLHS6342TRPBF only if supply chain constraints prevent sourcing SIRA36DP-T1-GE3

Compared with SiR626DP-T1-GE3 and IRLHS6342TRPBF, the SIRA36DP-T1-GE3 delivers the lowest R_DS(on) × Q_g product in its class, making it optimal for high-current, medium-frequency VRM phases where both conduction and switching losses must be minimized simultaneously.

Availability

SIRA36DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM output stages, high-density telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for SIRA36DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The PowerPAK® SO-8 MOSFET product line targets high-current, high-efficiency power conversion in computing, telecom, and industrial applications where thermal performance and low R_DS(on) are critical design requirements.

FAQ

What is the maximum continuous drain current rating for SIRA36DP-T1-GE3 at 70 °C case temperature?

The SIRA36DP-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and is validated by 100% UIS testing to ensure reliability at full current under transient stress.

Does SIRA36DP-T1-GE3 support gate drive voltages below 4.5 V?

The SIRA36DP-T1-GE3 is characterized down to V_GS = 4.5 V, with R_DS(on) = 4.2 mΩ at that level. While it will conduct at lower gate voltages, the datasheet does not guarantee performance below 4.5 V, and V_GS(th) ranges from 1.2 V to 2.2 V-so operation below 4.5 V may result in unpredictable R_DS(on) and increased conduction loss. For reliable low-voltage drive, SIRA36DP-T1-GE3 should be used with ≥4.5 V gate sources.

What is the thermal resistance from junction to case (R_thJC) for SIRA36DP-T1-GE3?

The SIRA36DP-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 2.2 °C/W, with a maximum of 2.8 °C/W, measured from junction to the exposed drain paddle. This low value enables effective heat transfer to external heatsinks or PCB copper planes, supporting high-power-density designs where thermal management is critical-such as in multi-phase VRMs using the SIRA36DP-T1-GE3.

Is SIRA36DP-T1-GE3 suitable for synchronous rectification in isolated DC/DC converters?

Yes, the SIRA36DP-T1-GE3 is explicitly recommended for synchronous rectification, with a fast body diode (t_rr = 33 ns, Q_rr = 22 nC) and low R_DS(on) at 4.5 V, enabling efficient replacement of Schottky diodes in secondary-side synchronous rectifiers. Its 30 V V_DS rating supports common 12 V and 24 V output rails, and the PowerPAK SO-8 package provides low-inductance layout for high di/dt operation in the SIRA36DP-T1-GE3.

What packaging and compliance features does SIRA36DP-T1-GE3 offer?

The SIRA36DP-T1-GE3 is supplied in tape-and-reel format (T1) with Pb-free and halogen-free construction per Vishay's material categorization standard (document 99912). The "GE3" suffix denotes RoHS-compliant, green (halogen-free) packaging. It uses the PowerPAK® SO-8 leadless package with exposed copper drain paddle, requiring reflow soldering per J-STD-020 profile-manual soldering is not recommended for the SIRA36DP-T1-GE3.

SIRA36DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2815 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA36DP-T1-GE3 FAQ

1.How can I place an order for SIRA36DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA36DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA36DP-T1-GE3 reliable?

The price and inventory of SIRA36DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA36DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA36DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA36DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA36DP-T1-GE3?

SIRA36DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA36DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA36DP-T1-GE3?

For technical support, including SIRA36DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA36DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA36DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA36DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA36DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA36DP-T1-GE3?

All SIRA36DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA36DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA36DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA36DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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