Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA50DP-T1-RE3

Name: SIRA50DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA50DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIRA50DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA50DP-T1-RE3.pdf

Description:: MOSFET N-CH 40V 62.5A/100A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIRA50DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.00 mΩ at V_GS = 10 V and 1.45 mΩ at V_GS = 4.5 V, with 100 A continuous drain current (T_J = 150 °C) and Q_g = 59.2 nC - optimized for high-efficiency synchronous rectification in VRMs and high-power-density DC/DC converters.

For engineers reviewing the SIRA50DP-T1-RE3 datasheet, SIRA50DP-T1-RE3 pinout, SIRA50DP-T1-RE3 application, or SIRA50DP-T1-RE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, Q_gd/Q_gs ratio < 1 for fast switching, 100 % R_g and UIS tested reliability, and thermal performance matching DPAK via PowerPAK SO-8's exposed-drain footprint.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (E_AS = 101 mJ). Its Q_gd/Q_gs ratio < 1 minimizes Miller-induced switching delays and improves hard-switching efficiency in high-frequency topologies.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, enabling direct thermal conduction to the PCB - achieving R_thJC = 0.95 °C/W (typ.) and R_thJA = 15 °C/W (typ., t ≤ 10 s), comparable to DPAK but with SO-8 footprint compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage suitable for 12 V and 24 V input systems with margin against transients
R_DS(on) @ 10 V	1.00 mΩ - enables <1 W conduction loss at 100 A, critical for VRM output stages
R_DS(on) @ 4.5 V	1.45 mΩ - supports efficient operation with 5 V gate drivers in intermediate bus converters
Q_g	59.2 nC - low total gate charge reduces driver power and switching losses at 500 kHz–1 MHz
I_D (continuous)	100 A @ T_C = 25 °C - rated for high-current load switch and OR-ing applications with heatsinked PCB
E_AS	101 mJ - single-pulse avalanche energy ensures ruggedness during inductive turn-off events
R_thJC	0.95 °C/W - junction-to-case thermal resistance enables >100 W dissipation with minimal ΔT to heatsink or copper plane

Pinout & Package

PowerPAK® SO-8 single-channel package: 5.15 mm × 6.15 mm footprint, 1.04 mm height, leadless construction with exposed drain pad on bottom surface. Compatible with standard SO-8 land patterns but requires extended drain copper for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection including large bottom-exposed pad - primary thermal path to PCB
G (pin 1 of top view)	Gate (G)	Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 1.00 mΩ R_DS(on) at 40 V rating - industry-leading figure-of-merit for power density
Q_gd/Q_gs ratio < 1	Reduces Miller plateau duration and improves dV/dt immunity in synchronous buck and LLC resonant converters
100 % R_g and UIS tested	Ensures gate robustness and single-pulse avalanche reliability without screening failures in production
Exposed drain pad	Provides direct thermal interface to PCB - achieves DPAK-level R_thJC in SO-8 footprint
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C material definitions

Applications

Synchronous Rectification	OR-ing Circuit
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs). IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %. Use Value: 1.45 mΩ R_DS(on) at 4.5 V gate drive enables >0.5 % efficiency gain vs. discrete diodes at 50 A load.	Use Scenario: Redundant power supply inputs in servers and storage systems. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with reverse current blocking. Use Value: Ultra-low R_DS(on) minimizes forward voltage drop (< 50 mV at 50 A), reducing heat generation and improving system MTBF.
High-Power-Density DC/DC	VRM Output Stage
Use Scenario: Point-of-load (POL) converters in AI accelerators and GPU power delivery. IC Role / Device Role / Timing Role: High-current, high-frequency (≥1 MHz) high-side or low-side switch in multiphase buck topology. Use Value: 59.2 nC Q_g and low C_iss/C_oss enable fast switching with minimal driver loss and EMI.	Use Scenario: CPU/GPU core voltage regulation requiring sub-1 V output at >300 A. IC Role / Device Role / Timing Role: Low-side switch in 3–6 phase interleaved buck converter with 300–1000 kHz switching frequency. Use Value: 100 A rating and 0.95 °C/W R_thJC support sustained high-current operation with <10 °C junction rise over board temperature.

Synchronous Rectification

OR-ing Circuit

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95 %.

Use Value: 1.45 mΩ R_DS(on) at 4.5 V gate drive enables >0.5 % efficiency gain vs. discrete diodes at 50 A load.

Use Scenario: Redundant power supply inputs in servers and storage systems.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with reverse current blocking.

Use Value: Ultra-low R_DS(on) minimizes forward voltage drop (< 50 mV at 50 A), reducing heat generation and improving system MTBF.

High-Power-Density DC/DC

VRM Output Stage

Use Scenario: Point-of-load (POL) converters in AI accelerators and GPU power delivery.

IC Role / Device Role / Timing Role: High-current, high-frequency (≥1 MHz) high-side or low-side switch in multiphase buck topology.

Use Value: 59.2 nC Q_g and low C_iss/C_oss enable fast switching with minimal driver loss and EMI.

Use Scenario: CPU/GPU core voltage regulation requiring sub-1 V output at >300 A.

IC Role / Device Role / Timing Role: Low-side switch in 3–6 phase interleaved buck converter with 300–1000 kHz switching frequency.

Use Value: 100 A rating and 0.95 °C/W R_thJC support sustained high-current operation with <10 °C junction rise over board temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.95 mΩ @ 10 V; Q_g = 62.5 nC; same PowerPAK SO-8 package	Slightly lower R_DS(on) but higher gate charge - better for low-frequency, high-current; less optimal for >1 MHz switching	Select SiR626DP-T1-RE3 when prioritizing lowest possible conduction loss over switching speed.
IRL8721PBF	R_DS(on) = 2.2 mΩ @ 4.5 V; TO-220 package; R_thJC = 1.25 °C/W; no leadless construction	Larger footprint and higher thermal resistance - requires heatsink for >30 A continuous operation	Choose IRL8721PBF only where legacy through-hole assembly or mechanical mounting constraints prohibit surface-mount packages.

Compared with SiR626DP-T1-RE3, SIRA50DP-T1-RE3 trades 0.05 mΩ higher R_DS(on) for 3.3 nC lower Q_g, favoring high-frequency efficiency; versus IRL8721PBF, it delivers 1.5× lower R_DS(on) and 3× better thermal resistance in half the footprint - making it superior for space-constrained, high-efficiency POL designs.

Availability

SIRA50DP-T1-RE3 is available at Aetrix Electronics and suitable for VRMs, high-power-density DC/DC converters, and OR-ing circuits requiring stable component supply across industrial, telecom, and computing applications.

Supply support for SIRA50DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK SO-8 product line was engineered to deliver DPAK-level thermal performance in SO-8 footprint - specifically targeting high-current, high-frequency power conversion in datacenter, AI, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SIRA50DP-T1-RE3?

The SIRA50DP-T1-RE3 is rated for 100 A continuous drain current at T_C = 25 °C, derating to 50 A at T_C = 70 °C per the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is validated under steady-state conditions with junction temperature limited to 150 °C. The SIRA50DP-T1-RE3 achieves this current capability due to its ultra-low 1.00 mΩ R_DS(on) and PowerPAK SO-8's 0.95 °C/W R_thJC.

Does SIRA50DP-T1-RE3 support 4.5 V gate drive in synchronous rectifier applications?

Yes, the SIRA50DP-T1-RE3 is fully specified for 4.5 V gate drive, with R_DS(on) = 1.45 mΩ (max) at V_GS = 4.5 V and I_D = 15 A. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.2 V, ensuring reliable enhancement-mode turn-on with standard 5 V logic-level controllers. This makes the SIRA50DP-T1-RE3 suitable for synchronous rectification in intermediate bus converters where 5 V gate bias is standard.

How does the PowerPAK SO-8 package of SIRA50DP-T1-RE3 improve thermal performance over standard SO-8?

The SIRA50DP-T1-RE3 uses PowerPAK SO-8 - a leadless package with an exposed copper drain pad on the bottom surface that serves as the primary thermal path to the PCB. This design achieves R_thJC = 0.95 °C/W (typ.), matching DPAK performance, whereas standard SO-8 packages exhibit ~16 °C/W. The result is up to 40 °C lower junction temperature under identical 2.7 W dissipation, directly preserving R_DS(on) and enabling higher current handling without heatsinks.

Is SIRA50DP-T1-RE3 suitable for avalanche-rated applications?

Yes, the SIRA50DP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 101 mJ (L = 0.1 mH). This specification ensures ruggedness during transient overcurrent events such as inductive load switching or fault conditions in motor drives and DC/AC inverters. The SIRA50DP-T1-RE3's avalanche capability is guaranteed by design and production-tested per Vishay's quality standards.

What is the gate charge profile of SIRA50DP-T1-RE3 and how does it affect switching behavior?

The SIRA50DP-T1-RE3 has Q_g = 59.2 nC (typ.) at V_GS = 4.5 V and V_DS = 20 V, with Q_gd = 13 nC and Q_gs = 25 nC. Its Q_gd/Q_gs ratio < 1 suppresses Miller-induced voltage spikes and shortens the Miller plateau, enabling faster, more controllable turn-off - especially beneficial in hard-switched synchronous buck and OR-ing topologies where shoot-through risk must be minimized. This characteristic is intrinsic to the TrenchFET® Gen IV process used in the SIRA50DP-T1-RE3.

SIRA50DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 62.5A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 194 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 8445 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA50DP-T1-RE3 FAQ

1.How can I place an order for SIRA50DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA50DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA50DP-T1-RE3 reliable?

The price and inventory of SIRA50DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA50DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA50DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA50DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA50DP-T1-RE3?

SIRA50DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA50DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA50DP-T1-RE3?

For technical support, including SIRA50DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA50DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA50DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA50DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA50DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA50DP-T1-RE3?

All SIRA50DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA50DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA50DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA50DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …