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Vishay Siliconix SIRA52DP-T1-GE3
- Part No.:
- SIRA52DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA52DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,275
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Product details
Overview
SIRA52DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 Single package, delivering RDS(on) = 1.4 mΩ at VGS = 10 V and 1.9 mΩ at VGS = 4.5 V, with 47.5 nC total gate charge and 60 A continuous drain current (TJ = 150 °C). It is optimized for high-efficiency synchronous rectification in DC/DC converters and battery/load switching in compact power systems.
For engineers reviewing the SIRA52DP-T1-GE3 datasheet, SIRA52DP-T1-GE3 pinout, SIRA52DP-T1-GE3 application, or SIRA52DP-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on)-Qoss figure of merit, Qgd/Qgs ratio < 1 for fast switching, 100 % Rg and UIS testing, and lead-free/halogen-free PowerPAK SO-8 packaging compatible with standard SO-8 land patterns.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology tuned specifically for minimal RDS(on)-Qoss FOM, enabling high-frequency operation with reduced conduction and switching losses. Its gate charge profile-Qg = 47.5 nC (VGS = 4.5 V), Qgd = 12.5 nC, Qgs = 19.6 nC-supports efficient hard-switching in synchronous buck topologies.
The device features a thermally enhanced PowerPAK® SO-8 Single package with exposed drain pad, achieving RthJC = 1.7 °C/W (typical) and RthJA = 22 °C/W (t ≤ 10 s), enabling high-current operation without external heatsinking when mounted on 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems |
| RDS(on) @ VGS = 10 V | 1.4 mΩ (typ) - Enables <1 W conduction loss at 60 A, critical for high-power density designs |
| RDS(on) @ VGS = 4.5 V | 1.9 mΩ (typ) - Ensures robust low-voltage gate drive compatibility with 5 V controllers |
| Qg | 47.5 nC (typ, VGS = 4.5 V) - Low gate charge reduces driver power and enables >1 MHz switching |
| ID (continuous) | 60 A (TC = 25 °C) - Supports high-current load switching and synchronous rectification without derating |
| Qgd/Qgs ratio | < 1 - Minimizes Miller-induced switching delay and improves turn-off control stability |
| RthJC | 1.7 °C/W (typ) - Direct thermal path from die to PCB enables efficient heat transfer to copper planes |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with same footprint and pinout as standard SO-8; features exposed copper drain pad on bottom for low thermal resistance and high-current capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5 | Gate (G) | Single gate input with Rg = 0.4–2.0 Ω (typ/max) - supports direct drive from PWM controllers without external gate resistor |
| 6, 7, 8, D Pad | Drain (D) | Eight-terminal drain connection including large bottom-exposed copper pad - maximizes current capacity and thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Optimized for lowest RDS(on)-Qoss FOM - reduces combined conduction + switching losses in high-frequency DC/DC stages |
| Qgd/Qgs ratio < 1 | Improves switching controllability and reduces risk of shoot-through in synchronous rectifiers |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche energy handling (EAS = 61 mJ) for reliable operation under transient overloads |
| PowerPAK® SO-8 footprint | Drop-in replacement for standard SO-8 layouts - no PCB redesign required while delivering DPAK-level thermal performance |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B - compliant for automotive and industrial end equipment |
Applications
| Server VRM Synchronous Rectifier | Industrial 48 V Battery Switch |
|---|---|
|
Use Scenario: High-current, high-efficiency output stage in server voltage regulator modules delivering up to 200 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve thermal margin. Use Value: 1.4 mΩ RDS(on) at 10 V gate drive reduces conduction loss by >60 % vs. typical 3.5 mΩ alternatives, enabling higher power density and lower junction temperature rise. |
Use Scenario: Solid-state main battery disconnect switch in industrial UPS and energy storage systems operating at 48 V nominal. IC Role / Device Role / Timing Role: High-current load switch controlling battery-to-bus connection with fast turn-on/turn-off and reverse polarity protection. Use Value: 60 A continuous rating and 150 A pulsed current support enable single-device implementation without paralleling, reducing BOM count and layout complexity. |
| High-Density Telecom DC/DC Converter | EV Onboard Charger Auxiliary Supply |
|
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V DC/DC converters for 5G base station power supplies. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by transformer-coupled gate signals in forward or LLC topology. Use Value: 47.5 nC Qg at 4.5 V allows clean switching at 500 kHz–1 MHz with minimal gate drive loss, improving overall converter efficiency above 95 %. |
Use Scenario: High-side or low-side switch in auxiliary 12 V supply derived from main EV traction battery (200–450 V DC). IC Role / Device Role / Timing Role: Load switch isolating auxiliary circuits during sleep mode or fault conditions in OBC control subsystems. Use Value: 40 V VDS rating with 100 % UIS testing ensures survivability against load dump transients and inductive kickback in automotive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | Same PowerPAK SO-8 package; 30 V VDS, 0.95 mΩ RDS(on) @ 10 V, 52 nC Qg | Better RDS(on) but lower voltage rating - suitable only for ≤30 V systems like 24 V industrial rails | Select when system VIN ≤ 30 V and lowest possible conduction loss is prioritized over voltage margin |
| IRL8721PBF | Standard SO-8 package; 30 V VDS, 2.3 mΩ RDS(on) @ 4.5 V, 21 nC Qg | Lower gate charge but significantly higher RDS(on) and worse thermal resistance (RthJC ≈ 16 °C/W) | Choose only for cost-sensitive, low-current (<20 A), low-frequency applications where thermal headroom is abundant |
Compared with SiR626DP-T1-GE3, SIRA52DP-T1-GE3 provides 10 V higher blocking voltage and better transient robustness for 48 V systems, while compared with IRL8721PBF it delivers 2.2× lower RDS(on) and 10× better thermal performance-enabling higher current density and smaller heatsinks in space-constrained power stages.
Availability
SIRA52DP-T1-GE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, battery management systems, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for SIRA52DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA52DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered for ultra-low RDS(on)-Qoss FOM in high-frequency, high-current power conversion applications such as server VRMs and telecom power supplies.
FAQ
What is the maximum continuous drain current rating for SIRA52DP-T1-GE3 at 70 °C case temperature?
The SIRA52DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and is identical to its rating at TC = 25 °C due to the device's thermally robust PowerPAK® SO-8 construction and low RthJC.
Does SIRA52DP-T1-GE3 support 4.5 V gate drive for full enhancement?
Yes, the SIRA52DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 1.9 mΩ (max) at VGS = 4.5 V and ID = 10 A. Its gate threshold voltage range (1.1–2.4 V) ensures reliable turn-on with standard 5 V logic-level controllers, and the Qgd/Qgs ratio < 1 maintains stable switching behavior even at reduced gate voltages.
What is the avalanche energy rating for SIRA52DP-T1-GE3, and is it production-tested?
The SIRA52DP-T1-GE3 has a single-pulse avalanche energy rating of EAS = 61 mJ (L = 0.1 mH) and undergoes 100 % Unclamped Inductive Switching (UIS) testing during production. This ensures each unit meets minimum avalanche ruggedness requirements for reliable operation under inductive load switching and fault transients.
Can SIRA52DP-T1-GE3 be mounted on a standard SO-8 footprint without modification?
Yes, the SIRA52DP-T1-GE3 uses the PowerPAK® SO-8 Single package, which shares identical outline dimensions, pin pitch, and terminal locations with the standard SO-8. It is designed as a drop-in replacement-no PCB layout changes are needed, though maximizing thermal performance requires extending the drain pad copper area per Vishay Application Note AN821.
What is the body diode forward voltage of SIRA52DP-T1-GE3 at 5 A source current?
The body diode forward voltage (VSD) of the SIRA52DP-T1-GE3 is specified as 0.71 V (typ) to 1.1 V (max) at IS = 5 A and TJ = 25 °C. This low VSD minimizes conduction loss during dead-time conduction in synchronous rectifier applications and improves light-load efficiency.
SIRA52DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7150 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA52DP-T1-GE3 FAQ
1.How can I place an order for SIRA52DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA52DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA52DP-T1-GE3 reliable?
The price and inventory of SIRA52DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA52DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA52DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA52DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA52DP-T1-GE3?
SIRA52DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA52DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA52DP-T1-GE3?
For technical support, including SIRA52DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA52DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA52DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA52DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA52DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA52DP-T1-GE3?
All SIRA52DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA52DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA52DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA52DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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