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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA52DP-T1-RE3

Name: SIRA52DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA52DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA52DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA52DP-T1-RE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SIRA52DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 Single package, delivering R_DS(on) = 1.4 mΩ at V_GS = 10 V and 1.9 mΩ at V_GS = 4.5 V, with 47.5 nC total gate charge and Q_gd/Q_gs ratio < 1 - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIRA52DP-T1-RE3 datasheet, SIRA52DP-T1-RE3 pinout, SIRA52DP-T1-RE3 application, or SIRA52DP-T1-RE3 equivalent, this device is selected for low-R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and compatibility with standard SO-8 land patterns while offering DPAK-level thermal performance (R_thJC = 1.7 °C/W).

Technical Context

This MOSFET employs a trench-based silicon structure tuned for minimal R_DS(on) × Q_oss FOM, enabling fast switching with reduced switching losses in hard-switched and synchronous rectifier topologies. Its Q_gd/Q_gs ratio of 0.032–0.064 suppresses Miller-induced turn-on and improves gate drive robustness.

The PowerPAK® SO-8 Single package features exposed drain copper on the bottom side, providing direct thermal conduction to the PCB, with R_thJC = 1.7 °C/W (typ.) and R_thJA = 22 °C/W (typ., t ≤ 10 s), matching DPAK thermal capability while retaining SO-8 footprint compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum drain-source blocking voltage for 12 V and 24 V bus applications
R_DS(on) @ 10 V	1.4 mΩ (typ.) - enables <1 W conduction loss at 60 A, critical for high-current synchronous rectifiers
R_DS(on) @ 4.5 V	1.9 mΩ (typ.) - supports logic-level gate drive in low-voltage control circuits
Q_g @ 10 V	47.5 nC (typ.) - determines gate driver current requirement and switching speed in 100–500 kHz DC/DC stages
I_D (continuous)	60 A @ T_C = 25 °C - package-limited current rating enabled by low R_thJC and large die area
Q_gd/Q_gs	< 1 - reduces voltage-dependent Miller plateau duration, improving EMI and dV/dt immunity
V_GS(th)	1.1–2.4 V - ensures reliable turn-on with 3.3 V or 5 V gate drivers without overdrive risk

Pinout & Package

PowerPAK® SO-8 Single: 5.15 mm × 6.15 mm × 1.04 mm body, leadless surface-mount package with exposed drain pad on bottom side for enhanced thermal transfer. Compatible with standard SO-8 footprints and reflow profiles (peak 255 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection including bottom-side exposed copper pad - primary thermal path to PCB
G (pin 1 of top view, labeled "G")	Gate (G)	Single gate input with R_g = 0.4–2.0 Ω - enables precise gate timing control and low overshoot

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers lowest R_DS(on) × Q_oss FOM in its voltage class - directly reduces combined conduction and switching losses
100% R_g and UIS tested	Ensures gate robustness against transient overstress and avalanche energy handling up to 61 mJ
Q_gd/Q_gs ratio < 1	Minimizes Miller plateau time and improves controllability during hard commutation events
PowerPAK® SO-8 thermal design	Provides R_thJC = 1.7 °C/W - matches DPAK performance while fitting SO-8 layout space
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1

Applications

Synchronous Rectification	High Power Density DC/DC
Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived LLC or phase-shifted full-bridge converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: Achieves >97% efficiency at 60 A output due to 1.4 mΩ R_DS(on) and fast body diode recovery (t_rr = 53 ns).	Use Scenario: Primary-side high-side switch in compact 1 kW telecom or server DC/DC bricks with tight thermal constraints. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology with 40 V bus and 100 A peak currents. Use Value: Enables 1.5× higher power density vs. SO-8 alternatives via DPAK-equivalent thermal resistance and 60 A continuous rating.
DC/AC Inverters	Battery and Load Switch
Use Scenario: H-bridge leg in 400 W micro-inverters for solar panel string-level conversion. IC Role / Device Role / Timing Role: Bidirectional switching element handling 40 V DC input and 230 V AC line-referenced output waveforms. Use Value: Supports unidirectional and reverse-conducting operation with 56.8 A continuous source current and 150 A pulsed capability.	Use Scenario: High-side load switch controlling 12 V/30 A battery-powered subsystems in automotive body electronics. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay or fuse, supporting hot-swap and fault protection. Use Value: Delivers <0.5 V dropout at 30 A (due to 1.9 mΩ R_DS(on) @ 4.5 V) and withstands 35 A single-pulse avalanche current.

Synchronous Rectification

High Power Density DC/DC

Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived LLC or phase-shifted full-bridge converters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: Achieves >97% efficiency at 60 A output due to 1.4 mΩ R_DS(on) and fast body diode recovery (t_rr = 53 ns).

Use Scenario: Primary-side high-side switch in compact 1 kW telecom or server DC/DC bricks with tight thermal constraints.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology with 40 V bus and 100 A peak currents.

Use Value: Enables 1.5× higher power density vs. SO-8 alternatives via DPAK-equivalent thermal resistance and 60 A continuous rating.

DC/AC Inverters

Battery and Load Switch

Use Scenario: H-bridge leg in 400 W micro-inverters for solar panel string-level conversion.

IC Role / Device Role / Timing Role: Bidirectional switching element handling 40 V DC input and 230 V AC line-referenced output waveforms.

Use Value: Supports unidirectional and reverse-conducting operation with 56.8 A continuous source current and 150 A pulsed capability.

Use Scenario: High-side load switch controlling 12 V/30 A battery-powered subsystems in automotive body electronics.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay or fuse, supporting hot-swap and fault protection.

Use Value: Delivers <0.5 V dropout at 30 A (due to 1.9 mΩ R_DS(on) @ 4.5 V) and withstands 35 A single-pulse avalanche current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 42.5 nC; same PowerPAK SO-8 package	Slightly lower gate charge but marginally higher R_DS(on); identical thermal and footprint compatibility	Preferred when gate drive power minimization outweighs 0.2 mΩ R_DS(on) penalty
IRL6213PBF	R_DS(on) = 2.4 mΩ @ 10 V; TO-220AB package; R_thJC = 1.5 °C/W; no SO-8 footprint match	Higher conduction loss and larger board area required; requires heatsink for 60 A operation	Only suitable where through-hole mounting and discrete thermal management are acceptable

Compared with SiR626DP-T1-RE3, SIRA52DP-T1-RE3 offers lower R_DS(on) for reduced conduction loss in high-current paths; compared with IRL6213PBF, it delivers SO-8 layout compatibility and superior PCB-level thermal performance without external heatsinking.

Availability

SIRA52DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC converters, and battery load switching requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIRA52DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIRA52DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency power conversion where low R_DS(on) × Q_oss and SO-8 footprint compatibility are critical.

FAQ

What is the maximum continuous drain current rating for SIRA52DP-T1-RE3 at 70 °C case temperature?

The SIRA52DP-T1-RE3 has a continuous drain current rating of 60 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and sustained by the PowerPAK® SO-8's low junction-to-case thermal resistance (R_thJC = 1.7 °C/W typ.), enabling high-current operation without derating under forced-air or heatsink-assisted conditions.

Does SIRA52DP-T1-RE3 support logic-level gate drive?

Yes, SIRA52DP-T1-RE3 supports logic-level gate drive: its gate-threshold voltage V_GS(th) ranges from 1.1 V to 2.4 V, and it delivers R_DS(on) = 1.9 mΩ (typ.) at V_GS = 4.5 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry.

How does the PowerPAK® SO-8 package of SIRA52DP-T1-RE3 improve thermal performance over standard SO-8?

The PowerPAK® SO-8 package of SIRA52DP-T1-RE3 uses an exposed drain pad on the bottom side to provide a direct thermal path to the PCB, achieving R_thJC = 1.7 °C/W (typ.) - equivalent to DPAK - versus ~16 °C/W for standard SO-8. This reduces junction temperature rise by ~40 °C under identical 2.7 W dissipation, preserving R_DS(on) and reliability.

Is SIRA52DP-T1-RE3 suitable for avalanche-rated applications?

Yes, SIRA52DP-T1-RE3 is 100% UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 61 mJ and avalanche current I_AS = 35 A (L = 0.1 mH). This makes it suitable for inductive load switching and fault-tolerant designs where transient energy absorption is required.

What is the body diode reverse recovery time (t_rr) of SIRA52DP-T1-RE3, and why does it matter in synchronous rectification?

The body diode reverse recovery time t_rr of SIRA52DP-T1-RE3 is 53 ns (typ.) at T_J = 25 °C, IF = 10 A, and dI/dt = 100 A/μs. In synchronous rectification, low t_rr minimizes reverse recovery current spikes and associated switching losses, enabling clean zero-voltage switching transitions and reducing EMI generation.

SIRA52DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 7150 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA52DP-T1-RE3 FAQ

1.How can I place an order for SIRA52DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA52DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA52DP-T1-RE3 reliable?

The price and inventory of SIRA52DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA52DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA52DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA52DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA52DP-T1-RE3?

SIRA52DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA52DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA52DP-T1-RE3?

For technical support, including SIRA52DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA52DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA52DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA52DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA52DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA52DP-T1-RE3?

All SIRA52DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA52DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA52DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA52DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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