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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA54ADP-T1-RE3

Name: SIRA54ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA54ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA54ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA54ADP-T1-RE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

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Product details

Overview

SIRA54ADP-T1-RE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 128 A continuous drain current at TC = 25 °C, with R_DS(on) of 0.0022 Ω at V_GS = 10 V and 0.0032 Ω at V_GS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIRA54ADP-T1-RE3 datasheet, SIRA54ADP-T1-RE3 pinout, SIRA54ADP-T1-RE3 application, or SIRA54ADP-T1-RE3 equivalent, key selection criteria include low Q_g (21.5 nC typ. at 4.5 V), low Q_oss, 100 % R_g and UIS tested reliability, and thermal performance with R_thJC = 1.5 °C/W (typical).

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture to achieve ultra-low on-resistance and gate charge, enabling high-frequency switching in synchronous buck converters and motor drive half-bridges. Its 40 V V_DS rating supports 12 V and 24 V input rails with margin for transient spikes.

The device features a single N-channel configuration with integrated body diode (V_SD = 0.72 V typ. at I_S = 5 A), trr = 29 ns typ., and Q_rr = 23 nC typ., supporting fast recovery in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V/24 V bus systems with 2× transient margin for automotive and industrial DC/DC inputs.
R_DS(on) @ 10 V	0.0022 Ω max - Enables <1.5 W conduction loss at 120 A, critical for high-power density converter designs.
R_DS(on) @ 4.5 V	0.0032 Ω max - Ensures robust operation with 5 V gate drivers and logic-level control in compact power stages.
Q_g @ 4.5 V	21.5 nC typ. - Reduces gate drive power and switching losses in >500 kHz PWM applications.
Q_oss	24.5 nC typ. - Minimizes turn-off energy and improves light-load efficiency in resonant and hard-switched topologies.
I_D (cont.)	128 A @ T_C = 25 °C - Delivers high current capability in thermally managed PCB layouts with heatsinked copper pads.
R_thJC	1.5 °C/W typical - Allows direct thermal coupling to heatsinks or thermal vias for junction temperature control below 150 °C.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, bottom-side thermal pad exposed copper). Dimensions: 6.15 mm × 5.15 mm × 1.05 mm. Thermal pad soldered to PCB for enhanced heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-inductance connection to power plane and minimize voltage overshoot.
G (Gate)	Control input	Single gate terminal located adjacent to source pins-enables Kelvin-source gate drive layout for accurate threshold control.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, directly improving system efficiency at 500–1000 kHz.
100 % R_g tested	Ensures consistent gate resistance (0.5–1.8 Ω) across production lots-critical for predictable EMI and switching timing.
100 % UIS tested	Guarantees avalanche ruggedness (E_AS = 31.25 mJ) without derating-supports reliable operation under short-circuit or inductive load faults.
Low Q_oss / C_oss	Reduces turn-off loss and enables ZVS in LLC and phase-shifted full-bridge topologies with minimal snubber requirements.
PowerPAK SO-8 thermal pad	Enables 65.7 W power dissipation at T_C = 25 °C-achieves >3× the thermal performance of standard SO-8 packages.

Applications

Synchronous Rectifier in Isolated DC/DC	High-Density Point-of-Load Converter
Use Scenario: Secondary-side rectification in 48 V–12 V isolated buck-derived converters for telecom and server power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %. Use Value: Achieves 0.75 W lower conduction loss vs. 40 V Schottky at 100 A, enabling 10–15 W higher output power in same footprint.	Use Scenario: High-current, high-frequency buck converter delivering up to 120 A at 0.8–1.2 V for CPU/GPU VRMs. IC Role / Device Role / Timing Role: High-side power switch operating at 600–800 kHz with tight dead-time control. Use Value: R_DS(on) of 0.0022 Ω minimizes I²R loss, allowing 128 A rating without forced air cooling in 25 mm × 25 mm layout.
Brushless DC Motor Half-Bridge	Industrial 24 V Power Distribution Switch
Use Scenario: Upper/lower FET in three-phase BLDC inverter driving 500 W–1 kW motors in HVAC and robotics. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in half-bridge leg with integrated body diode for freewheeling. Use Value: trr = 29 ns and Q_rr = 23 nC prevent shoot-through and reduce switching loss during commutation at 20 kHz PWM.	Use Scenario: Solid-state replacement for mechanical relays in 24 V industrial PLC I/O modules and power distribution units. IC Role / Device Role / Timing Role: Load switch with overcurrent and thermal protection enabled via external controller. Use Value: 128 A rating and 40 V V_DS support 20 A sustained loads with 2× surge margin; R_thJC = 1.5 °C/W enables direct heatsink mounting.

Synchronous Rectifier in Isolated DC/DC

High-Density Point-of-Load Converter

Use Scenario: Secondary-side rectification in 48 V–12 V isolated buck-derived converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %.

Use Value: Achieves 0.75 W lower conduction loss vs. 40 V Schottky at 100 A, enabling 10–15 W higher output power in same footprint.

Use Scenario: High-current, high-frequency buck converter delivering up to 120 A at 0.8–1.2 V for CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-side power switch operating at 600–800 kHz with tight dead-time control.

Use Value: R_DS(on) of 0.0022 Ω minimizes I²R loss, allowing 128 A rating without forced air cooling in 25 mm × 25 mm layout.

Brushless DC Motor Half-Bridge

Industrial 24 V Power Distribution Switch

Use Scenario: Upper/lower FET in three-phase BLDC inverter driving 500 W–1 kW motors in HVAC and robotics.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in half-bridge leg with integrated body diode for freewheeling.

Use Value: trr = 29 ns and Q_rr = 23 nC prevent shoot-through and reduce switching loss during commutation at 20 kHz PWM.

Use Scenario: Solid-state replacement for mechanical relays in 24 V industrial PLC I/O modules and power distribution units.

IC Role / Device Role / Timing Role: Load switch with overcurrent and thermal protection enabled via external controller.

Use Value: 128 A rating and 40 V V_DS support 20 A sustained loads with 2× surge margin; R_thJC = 1.5 °C/W enables direct heatsink mounting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8726PBF	R_DS(on) = 0.0025 Ω @ 10 V; Q_g = 24 nC @ 4.5 V; TO-220AB package	Higher thermal resistance (R_thJC = 2.5 °C/W); requires through-hole mounting and heatsink	Select when board space allows TO-220 and discrete heatsinking is preferred over PCB-integrated thermal management.
DMTH4007LPS-13	R_DS(on) = 0.0028 Ω @ 10 V; Q_g = 20.5 nC @ 4.5 V; PowerFLAT™ 5×6 package	Smaller footprint (5 mm × 6 mm) but lower I_D rating (100 A); no exposed drain pad on bottom	Select when PCB area is constrained and peak current ≤ 100 A; verify thermal via count for equivalent R_thJA.

Compared with IRL8726PBF and DMTH4007LPS-13, the SIRA54ADP-T1-RE3 offers the lowest R_DS(on) × Q_g product in a surface-mount package with superior thermal path-making it optimal for high-current, high-efficiency, space-constrained DC/DC and motor drive applications where PCB copper acts as primary heatsink.

Availability

SIRA54ADP-T1-RE3 is available at Aetrix Electronics and suitable for high-current DC/DC converters, BLDC motor drives, and industrial 24 V power distribution systems requiring stable component supply and long-term manufacturability.

Supply support for SIRA54ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIRA54ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-density power conversion in data center, industrial, and automotive subsystems.

FAQ

What is the maximum continuous drain current rating for SIRA54ADP-T1-RE3?

The SIRA54ADP-T1-RE3 is rated for 128 A continuous drain current at case temperature T_C = 25 °C, and 103 A at T_C = 70 °C. This rating assumes proper PCB copper area and thermal vias under the PowerPAK SO-8 thermal pad to maintain junction temperature ≤ 150 °C. Derating curves are provided in the datasheet Figure 5.

Does SIRA54ADP-T1-RE3 support 4.5 V gate drive in logic-level applications?

Yes, the SIRA54ADP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) guaranteed ≤ 0.0032 Ω and total gate charge Q_g = 21.5 nC (typical). Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on with standard 5 V microcontroller or gate driver outputs.

What is the body diode performance of SIRA54ADP-T1-RE3?

The SIRA54ADP-T1-RE3 features an integrated body diode with forward voltage V_SD = 0.72 V (typical) at I_S = 5 A, reverse recovery time t_rr = 29 ns (typical), and Q_rr = 23 nC (typical) at T_J = 25 °C. These parameters enable efficient freewheeling in synchronous rectifiers and half-bridge motor drives without external diode supplementation.

Is SIRA54ADP-T1-RE3 suitable for avalanche-rated applications?

Yes, the SIRA54ADP-T1-RE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per JEDEC JESD24-1, with single-pulse avalanche energy E_AS = 31.25 mJ and peak avalanche current I_AS = 25 A. This ensures robustness against inductive load transients and short-circuit events in motor control and power supply designs.

What is the thermal resistance from junction to case for SIRA54ADP-T1-RE3?

The SIRA54ADP-T1-RE3 has a typical junction-to-case (drain) thermal resistance R_thJC of 1.5 °C/W, with a maximum of 1.9 °C/W. This low value is achieved via the exposed copper thermal pad on the bottom of the PowerPAK SO-8 package, which must be soldered to a large PCB copper area with thermal vias for optimal heat transfer.

SIRA54ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 36.2A (Ta), 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA54ADP-T1-RE3 FAQ

1.How can I place an order for SIRA54ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA54ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA54ADP-T1-RE3 reliable?

The price and inventory of SIRA54ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA54ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA54ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA54ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA54ADP-T1-RE3?

SIRA54ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA54ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA54ADP-T1-RE3?

For technical support, including SIRA54ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA54ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA54ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA54ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA54ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA54ADP-T1-RE3?

All SIRA54ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA54ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA54ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA54ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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