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Vishay Siliconix SIRA54DP-T1-GE3
- Part No.:
- SIRA54DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA54DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,980
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Product details
Overview
SIRA54DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 single package, delivering RDS(on) = 2.35 mΩ at VGS = 10 V and 3.20 mΩ at VGS = 4.5 V, with 32 nC total gate charge and 60 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.
For engineers reviewing the SIRA54DP-T1-GE3 datasheet, SIRA54DP-T1-GE3 pinout, SIRA54DP-T1-GE3 application, or SIRA54DP-T1-GE3 equivalent, key selection criteria include its low RDS(on)-Qoss figure of merit, Qgd/Qgs ratio < 1 for fast switching, 100 % Rg and UIS tested reliability, and lead-free/halogen-free PowerPAK SO-8 packaging compatible with standard SO-8 land patterns.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 45 mJ) and tight gate charge control (Qg = 32 nC typ. at 4.5 V). Its thermal design leverages the PowerPAK SO-8's exposed drain pad for direct board heat sinking, achieving RthJC = 2.5 °C/W (typ.) and enabling high-current operation without external heatsinks.
The device is characterized for stable performance across -55 °C to +150 °C junction temperature range, with VGS(th) = 1.1–2.3 V and body diode VSD = 0.72–1.1 V at IS = 5 A. Its Crss/Ciss ratio of 0.020–0.040 supports clean turn-off behavior in hard-switched topologies, and it is 100 % production-tested for gate resistance and unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum drain-source blocking voltage suitable for 12 V and 24 V input DC/DC systems |
| RDS(on) @ 10 V | 2.35 mΩ max - enables ≤ 1.4 W conduction loss at 60 A, critical for high-power-density VRMs |
| RDS(on) @ 4.5 V | 3.20 mΩ max - ensures strong enhancement-mode drive compatibility with 5 V logic and low-voltage controllers |
| Qg | 32 nC typ. @ 4.5 V - reduces gate drive power and enables efficient operation in high-frequency (>500 kHz) converters |
| ID (cont.) | 60 A @ TC = 25 °C - supports high-current synchronous rectifier legs without paralleling devices |
| EAS | 45 mJ - provides robustness against inductive switching transients in motor drives and inverters |
| RthJC | 2.5 °C/W typ. - allows >30 W steady-state dissipation with minimal ΔT from die to case, simplifying thermal layout |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with same footprint and pinout as standard SO-8; features exposed copper drain pad on bottom for enhanced thermal conduction and mechanical stability. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain configuration maximizes copper area for thermal spreading and minimizes RDS(on) path resistance |
| G (pin 1 side, top view) | Gate (G) | Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation during switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables lowest RDS(on)-Qoss FOM among 40 V SO-8 MOSFETs, directly improving converter efficiency at 500 kHz–1 MHz |
| Qgd/Qgs < 1 | Reduces Miller plateau duration and improves controllability during turn-off, minimizing shoot-through risk in half-bridge configurations |
| 100 % Rg and UIS tested | Guarantees gate robustness and avalanche energy handling per unit, eliminating field failures due to gate oxide rupture or inductive stress |
| PowerPAK SO-8 package | Delivers DPAK-level thermal performance (RthJC = 2.5 °C/W) in SO-8 footprint, enabling drop-in upgrade from legacy SO-8 without PCB redesign |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C, supporting compliance in industrial, telecom, and computing end equipment |
Applications
| Synchronous Rectification | High-Power-Density DC/DC |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for AI accelerators and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses and improve full-load efficiency. Use Value: Achieves <0.5 % efficiency gain over 4.5 V drive-compatible alternatives due to 3.20 mΩ RDS(on) and 32 nC Qg. |
Use Scenario: Output stage in compact 300 W point-of-load (POL) modules for FPGA and ASIC power delivery. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in multiphase buck converters operating at 1 MHz. Use Value: Enables 60 A continuous current per phase with <1.5 °C/W effective thermal resistance when mounted on 0.5 in² spreading copper. |
| VRMs and Embedded DC/DC | DC/AC Inverters |
Use Scenario: Core voltage regulation for high-performance CPUs and GPUs in data center motherboards. IC Role / Device Role / Timing Role: Bottom-FET in interleaved 3+1 phase VRM delivering up to 300 A transient current. Use Value: Supports 100 % duty cycle operation with TJ ≤ 125 °C under 60 A DC load due to 2.5 °C/W RthJC and low RDS(on) tempco. |
Use Scenario: H-bridge leg in micro-inverters for residential solar string conversion (200–400 V DC input). IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated switch handling bidirectional current and inductive flyback energy. Use Value: Withstands 30 A single-pulse avalanche current and 45 mJ energy, reducing need for external snubbers in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 2.75 mΩ @ 10 V (vs. 2.35 mΩ); Qg = 36 nC @ 4.5 V (vs. 32 nC); same PowerPAK SO-8 package | Slightly higher conduction and switching losses; suitable where margin exists in thermal budget | Select SiR626DP-T1-GE3 if lower gate charge sensitivity or tighter VGS(th) tolerance (1.2–2.2 V) is preferred over absolute RDS(on) minimum |
| IRF7470PBF | Standard SO-8 package; RDS(on) = 3.1 mΩ @ 10 V; RthJA = 62 °C/W (vs. 24–28 °C/W for SIRA54DP-T1-GE3) | Higher thermal resistance limits usable current to ~25 A at TA = 70 °C; not suitable for high-power-density layouts | Choose IRF7470PBF only for legacy SO-8 board reuse where thermal headroom exceeds 40 °C and peak current ≤ 25 A |
Compared with SiR626DP-T1-GE3 and IRF7470PBF, SIRA54DP-T1-GE3 delivers the lowest RDS(on)-Qoss FOM and best thermal performance in SO-8 footprint, making it optimal for space-constrained, high-efficiency 40 V synchronous rectifiers and POL converters where junction temperature must stay below 125 °C under full load.
Availability
SIRA54DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC, and VRM applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for SIRA54DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
SIRA54DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in servers, telecom infrastructure, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SIRA54DP-T1-GE3 at 70 °C case temperature?
The SIRA54DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from its 25 °C rating due to the PowerPAK SO-8's low RthJC of 2.5 °C/W, enabling high-current operation without derating until case temperature approaches 100 °C.
Does SIRA54DP-T1-GE3 support 4.5 V gate drive in high-frequency synchronous rectifier applications?
Yes, SIRA54DP-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 3.20 mΩ max at ID = 10 A and VGS = 4.5 V. Its low Qg (32 nC typ.) and Qgd/Qgs < 1 ensure fast, controlled switching up to 1 MHz, making it ideal for 4.5 V-driven synchronous rectifiers in modern VRMs and POL converters.
How does the PowerPAK SO-8 package of SIRA54DP-T1-GE3 improve thermal performance versus standard SO-8 MOSFETs?
The PowerPAK SO-8 package of SIRA54DP-T1-GE3 achieves RthJC = 2.5 °C/W (typ.), matching DPAK performance while retaining SO-8 footprint. This is 6× better than standard SO-8 (RthJC ≈ 16 °C/W), enabling >30 W power dissipation with minimal junction-to-case temperature rise - critical for maintaining low RDS(on) and reliability in compact, high-power designs.
Is SIRA54DP-T1-GE3 suitable for avalanche-prone circuits such as DC/AC inverters?
Yes, SIRA54DP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for IAS = 30 A and EAS = 45 mJ. These validated avalanche capabilities make it suitable for DC/AC inverter H-bridge legs where inductive energy recovery and transient overvoltage events occur, provided layout minimizes stray inductance.
What is the gate threshold voltage range for SIRA54DP-T1-GE3, and how does it affect controller compatibility?
The gate threshold voltage VGS(th) for SIRA54DP-T1-GE3 is 1.1–2.3 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V gate drivers. Its negative temperature coefficient (−5.2 mV/°C) maintains stable switching behavior across −55 °C to +150 °C, supporting robust operation in automotive and industrial environments without gate drive overdesign.
SIRA54DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA54DP-T1-GE3 FAQ
1.How can I place an order for SIRA54DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA54DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA54DP-T1-GE3 reliable?
The price and inventory of SIRA54DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA54DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA54DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA54DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA54DP-T1-GE3?
SIRA54DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA54DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA54DP-T1-GE3?
For technical support, including SIRA54DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA54DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA54DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA54DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA54DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA54DP-T1-GE3?
All SIRA54DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA54DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA54DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA54DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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