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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA58ADP-T1-RE3

Name: SIRA58ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA58ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA58ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA58ADP-T1-RE3.pdf

Description:: MOSFET N-CH 40V 32.3A/109A PPAK

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Product details

Overview

SIRA58ADP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.65 mΩ at V_GS = 10 V and 3.95 mΩ at V_GS = 4.5 V, with 109 A continuous drain current (T_J = 150 °C, T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIRA58ADP-T1-RE3 datasheet, SIRA58ADP-T1-RE3 pinout, SIRA58ADP-T1-RE3 application, or SIRA58ADP-T1-RE3 equivalent, key selection criteria include low Q_gd/Q_gs ratio (<1) for fast switching, 100% R_g and UIS testing for robustness, and thermal performance matching DPAK (R_thJC = 1.7–2.2 °C/W) while retaining SO-8 footprint compatibility.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance and optimized gate charge distribution, with Q_gd/Q_gs < 1 ensuring reduced Miller effect and improved hard-switching efficiency. Its 40 V V_DS rating and ±16 V V_GS range support operation in 12 V and 24 V bus systems with margin for transient overvoltage.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction, enabling junction-to-case thermal resistance as low as 1.7 °C/W (typical) - equivalent to DPAK - while maintaining full pinout and land pattern compatibility with standard SO-8 footprints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 12 V/24 V input DC/DC and inverter half-bridge topologies with headroom for load dump transients.
R_DS(on) @ V_GS = 10 V	2.65 mΩ max - Enables ≤2.7 W conduction loss at 100 A, critical for high-current synchronous rectifier stages.
R_DS(on) @ V_GS = 4.5 V	3.95 mΩ max - Ensures stable on-state performance with logic-level gate drive from standard PWM controllers.
Q_g typ.	18.5 nC @ V_GS = 4.5 V - Low total gate charge reduces driver power and switching losses in high-frequency (>500 kHz) applications.
I_D continuous (T_C = 25 °C)	109 A - High current capability supports single-device implementation in high-power density point-of-load converters.
R_thJC max.	2.2 °C/W - Thermal path from junction to drain pad enables efficient heat transfer to PCB copper, supporting >50 W dissipation with minimal board area.
Q_gd/Q_gs ratio	<1 - Optimized charge partitioning minimizes voltage-dependent Miller plateau duration, improving turn-off controllability and EMI behavior.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad), 6.15 mm × 5.15 mm footprint, compatible with standard SO-8 land patterns per Vishay Application Note AN821. Bottom-side drain pad provides primary thermal path; no solder fillet required at singulated copper edge.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier operation.
5, 6, 7, 8	Drain (D)	Eight-drain-terminal configuration connects to large-area bottom-side copper pad for low-inductance, high-current return path and thermal conduction.
G (Gate)	Control input	Single gate terminal located at Pin 1 (top view); requires <2.5 Ω gate resistance for optimal switching speed and ringing suppression.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 2.65 mΩ R_DS(on) at 40 V rating - industry-leading figure of merit (R_DS(on) × Q_g) for high-current, high-frequency power stages.
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress (E_AS = 45 mJ).
Q_gd/Q_gs < 1	Reduces Miller plateau time by >30% vs. legacy MOSFETs, enabling faster, more predictable turn-off and lower switching loss at 1 MHz.
PowerPAK® SO-8 package	Provides DPAK-equivalent thermal performance (R_thJC = 1.7 °C/W typ.) in SO-8 footprint - eliminates need for layout redesign when upgrading from standard SO-8.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; qualified per J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life.

Applications

Synchronous Rectification	High Power Density DC/DC
Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived LLC or phase-shifted full-bridge converter delivering up to 200 W. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%. Use Value: 2.65 mΩ R_DS(on) cuts rectifier conduction loss by >60% vs. 40 V Schottky, enabling 1.2 °C lower junction rise at 80 A output.	Use Scenario: Primary-side high-side switch in compact 12 V input, 1.2 V/100 A VRM for AI accelerator cards. IC Role / Device Role: High-current, high-frequency power switch in multiphase buck converter operating at 1 MHz. Use Value: 18.5 nC Q_g at 4.5 V allows clean 10 ns rise/fall times with 1 Ω gate driver, minimizing dead-time loss and improving light-load efficiency.
DC/AC Inverters	Industrial Motor Drives
Use Scenario: Half-bridge leg in 24 V battery-powered portable inverter generating 115 V AC sine wave output. IC Role / Device Role: Low-voltage, high-current switching element in H-bridge output stage handling peak currents up to 150 A. Use Value: 150 A pulsed drain current (I_DM) and 30 A single-pulse avalanche current (I_AS) ensure safe operation during short-circuit and shoot-through fault conditions.	Use Scenario: Phase-leg switch in 48 V BLDC motor controller for automated guided vehicle (AGV) traction system. IC Role / Device Role: N-channel MOSFET in three-phase inverter bridge driving 5 kW permanent magnet motor. Use Value: R_thJC = 1.7 °C/W enables direct mounting to aluminum heatsink via thermal pad, sustaining 45 W continuous dissipation without forced air cooling.

Synchronous Rectification

High Power Density DC/DC

Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived LLC or phase-shifted full-bridge converter delivering up to 200 W.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%.

Use Value: 2.65 mΩ R_DS(on) cuts rectifier conduction loss by >60% vs. 40 V Schottky, enabling 1.2 °C lower junction rise at 80 A output.

Use Scenario: Primary-side high-side switch in compact 12 V input, 1.2 V/100 A VRM for AI accelerator cards.

IC Role / Device Role: High-current, high-frequency power switch in multiphase buck converter operating at 1 MHz.

Use Value: 18.5 nC Q_g at 4.5 V allows clean 10 ns rise/fall times with 1 Ω gate driver, minimizing dead-time loss and improving light-load efficiency.

DC/AC Inverters

Industrial Motor Drives

Use Scenario: Half-bridge leg in 24 V battery-powered portable inverter generating 115 V AC sine wave output.

IC Role / Device Role: Low-voltage, high-current switching element in H-bridge output stage handling peak currents up to 150 A.

Use Value: 150 A pulsed drain current (I_DM) and 30 A single-pulse avalanche current (I_AS) ensure safe operation during short-circuit and shoot-through fault conditions.

Use Scenario: Phase-leg switch in 48 V BLDC motor controller for automated guided vehicle (AGV) traction system.

IC Role / Device Role: N-channel MOSFET in three-phase inverter bridge driving 5 kW permanent magnet motor.

Use Value: R_thJC = 1.7 °C/W enables direct mounting to aluminum heatsink via thermal pad, sustaining 45 W continuous dissipation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 2.95 mΩ @ 10 V; Q_g = 20.5 nC @ 4.5 V; same PowerPAK SO-8 package.	Slightly higher conduction loss but identical thermal and layout compatibility; preferred where tighter R_DS(on) tolerance is required.	Select SiR626DP-T1-RE3 if design requires guaranteed R_DS(on) ≤ 2.95 mΩ across temperature, accepting +10% Q_g.
IRF7470PBF	SO-8 package (leaded); R_DS(on) = 3.2 mΩ @ 10 V; R_thJC = 3.0 °C/W; no Q_gd/Q_gs optimization.	Higher thermal resistance limits power handling; leaded construction increases parasitic inductance, reducing high-frequency suitability.	Choose IRF7470PBF only for cost-sensitive, low-frequency (<200 kHz), non-thermal-constrained designs where SO-8 reflow compatibility is mandatory.

Compared with SiR626DP-T1-RE3 and IRF7470PBF, SIRA58ADP-T1-RE3 delivers the lowest R_DS(on) and best Q_gd/Q_gs ratio in its class, making it optimal for high-efficiency, high-frequency synchronous rectifiers where thermal headroom and switching loss are critical.

Availability

SIRA58ADP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, high-power-density DC/DC conversion, and industrial motor drive applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SIRA58ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal innovation.

SIRA58ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current for SIRA58ADP-T1-RE3 at 70 °C case temperature?

The maximum continuous drain current for SIRA58ADP-T1-RE3 is 87.3 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal limitations and must be validated against actual board-level thermal performance using the device's R_thJC = 1.7–2.2 °C/W and applied heatsinking. SIRA58ADP-T1-RE3 maintains this rating without requiring external gate drivers beyond standard 4.5 V logic-level sources.

Does SIRA58ADP-T1-RE3 support logic-level gate drive?

Yes, SIRA58ADP-T1-RE3 supports logic-level gate drive with guaranteed R_DS(on) ≤ 3.95 mΩ at V_GS = 4.5 V, enabling direct interface with standard PWM controllers and microcontrollers. Its gate-threshold voltage (V_GS(th)) ranges from 1.1 V to 2.4 V, ensuring reliable turn-on with 3.3 V or 5 V gate signals. SIRA58ADP-T1-RE3 does not require bootstrap circuitry or level-shifting for typical low-side synchronous rectifier use.

What is the avalanche energy rating for SIRA58ADP-T1-RE3?

SIRA58ADP-T1-RE3 is rated for 45 mJ single-pulse avalanche energy (E_AS) and 30 A single-pulse avalanche current (I_AS) under L = 0.1 mH test conditions. These values are verified per JEDEC JESD24-1 and confirm ruggedness in inductive switching applications such as motor drives and DC/AC inverters. SIRA58ADP-T1-RE3 incorporates 100% UIS testing in production to ensure consistency.

How does the PowerPAK® SO-8 package of SIRA58ADP-T1-RE3 compare thermally to standard SO-8?

SIRA58ADP-T1-RE3's PowerPAK® SO-8 package achieves R_thJC = 1.7–2.2 °C/W, matching DPAK performance and offering ~10× lower junction-to-case thermal resistance than standard SO-8 (16 °C/W). This enables up to 56.8 W power dissipation at T_C = 25 °C - more than double that of conventional SO-8 MOSFETs. SIRA58ADP-T1-RE3 leverages its exposed drain pad for direct PCB thermal coupling without requiring additional heatsinks in most medium-power applications.

Is SIRA58ADP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SIRA58ADP-T1-RE3 uses the exact same pinout and 6.15 mm × 5.15 mm footprint as standard SO-8 packages, allowing drop-in replacement on existing layouts. However, its leadless PowerPAK® SO-8 construction places all drain connections on the bottom-side copper pad, so PCB land patterns should follow Vishay's recommended minimum pads (Document 72599) to maximize thermal and electrical performance. SIRA58ADP-T1-RE3 retains full functional and mechanical compatibility while delivering superior electrical and thermal characteristics.

SIRA58ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 32.3A (Ta), 109A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.65mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3030 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA58ADP-T1-RE3 FAQ

1.How can I place an order for SIRA58ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA58ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA58ADP-T1-RE3 reliable?

The price and inventory of SIRA58ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA58ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA58ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA58ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA58ADP-T1-RE3?

SIRA58ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA58ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA58ADP-T1-RE3?

For technical support, including SIRA58ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA58ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA58ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA58ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA58ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA58ADP-T1-RE3?

All SIRA58ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA58ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA58ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA58ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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