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Vishay Siliconix SIRA58DP-T1-GE3

Name: SIRA58DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA58DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA58DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA58DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SIRA58DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.65 mΩ at V_GS = 10 V and 3.60 mΩ at V_GS = 4.5 V, with 109 A continuous drain current (T_J = 150 °C, T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIRA58DP-T1-GE3 datasheet, SIRA58DP-T1-GE3 pinout, SIRA58DP-T1-GE3 application, or SIRA58DP-T1-GE3 equivalent, this page provides verified thermal resistance values (R_thJC = 1.7–2.2 °C/W), gate charge metrics (Q_g = 23 nC @ 4.5 V), body diode recovery (t_rr = 38–76 ns), and PowerPAK SO-8 land pattern compatibility with standard SO-8 footprints.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology with Q_gd/Q_gs ratio < 1 to minimize switching losses and improve hard-switching robustness. Its 40 V V_DS rating supports 12 V and 24 V input bus architectures in isolated and non-isolated topologies.

The PowerPAK SO-8 package features exposed copper drain pads on the bottom side for low-inductance, low-resistance thermal conduction - junction-to-case thermal resistance is specified at 1.7–2.2 °C/W (steady state), matching DPAK performance while retaining SO-8 footprint compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V/24 V DC/DC and inverter primary-side switching with 20 % voltage margin.
R_DS(on) max @ V_GS = 10 V	2.65 mΩ - Enables ≤ 2.9 W conduction loss at 109 A, critical for high-current synchronous rectifiers.
R_DS(on) max @ V_GS = 4.5 V	3.60 mΩ - Ensures stable operation with 5 V gate drive in logic-level control circuits.
Q_g typ.	23 nC @ 4.5 V - Low total gate charge reduces driver power demand and enables fast turn-on/turn-off (t_d(on) = 22 ns, t_f = 10 ns).
I_D continuous (T_C = 25 °C)	109 A - High current capability allows single-device replacement of paralleled SO-8 MOSFETs in compact power stages.
R_thJC max	2.2 °C/W - Enables direct thermal coupling to PCB copper; achieves die temperature rise < 3°C above board at 2.7 W dissipation.
t_rr (body diode)	38–76 ns - Fast reverse recovery minimizes shoot-through risk and EMI in synchronous buck and LLC resonant converters.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, 5.15 mm × 6.15 mm, 1.04 mm height), compatible with standard SO-8 land patterns. Exposed drain pad on bottom provides low-thermal-resistance path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Eight-terminal drain configuration maximizes copper area contact; bottom-side exposed pad serves as primary thermal and current path.
G (Pin 1 of top view, labeled "G")	Gate (G)	Single gate terminal located adjacent to source pins; layout minimizes gate loop inductance for stable high-frequency switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables ultra-low R_DS(on) and optimized Q_gd/Q_gs ratio (< 1) for reduced Miller-induced switching delay and improved EMI behavior.
100 % R_g and UIS tested	Guarantees gate resistance consistency (0.5–2.4 Ω) and ruggedness against unclamped inductive switching stress up to 45 mJ.
PowerPAK SO-8 package	Delivers DPAK-level thermal performance (R_thJC = 1.7–2.2 °C/W) in SO-8 footprint - no PCB redesign required for drop-in upgrade.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, suitable for automotive and industrial applications requiring green manufacturing.
Body diode t_rr and Q_rr characterized	Reverse recovery time (38–76 ns) and charge (33–66 nC) are fully specified - essential for accurate synchronous rectifier timing design.

Applications

Synchronous Rectification	High Power Density DC/DC
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for server VRMs and telecom power supplies. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses and improve efficiency at >30 A loads. Use Value: Achieves ≥1.2 % efficiency gain over 40 V Schottky diodes at 50 A/12 V output due to 2.65 mΩ R_DS(on) and fast body diode recovery.	Use Scenario: Primary-side high-side switch in 12 V input, 3.3 V/50 A point-of-load (POL) converters using multiphase buck topology. IC Role / Device Role: High-current, low-R_DS(on) power switch enabling compact 2-layer PCB layouts with minimal heatsinking. Use Value: Supports 109 A continuous current without paralleling, reducing component count and layout complexity while maintaining < 40 °C junction rise at full load.
DC/AC Inverters	Industrial Motor Drives
Use Scenario: Half-bridge leg in 24 V battery-powered micro-inverters for portable solar generators and UPS systems. IC Role / Device Role: Fast-switching N-channel MOSFET in bridge configuration, driven by isolated gate drivers with 4.5 V logic-level compatibility. Use Value: Q_g = 23 nC @ 4.5 V ensures low driver power consumption and clean switching edges even at 100 kHz PWM frequency.	Use Scenario: Phase-leg switch in 24–48 V BLDC motor controllers for robotics and automated guided vehicles (AGVs). IC Role / Device Role: High-reliability power switch handling repetitive pulsed currents up to 150 A (I_DM) during motor startup and regenerative braking. Use Value: 100 % UIS tested and 30 A single-pulse avalanche rating (I_AS) provide robustness against inductive energy spikes during fault conditions.

Synchronous Rectification

High Power Density DC/DC

Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived converters for server VRMs and telecom power supplies.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses and improve efficiency at >30 A loads.

Use Value: Achieves ≥1.2 % efficiency gain over 40 V Schottky diodes at 50 A/12 V output due to 2.65 mΩ R_DS(on) and fast body diode recovery.

Use Scenario: Primary-side high-side switch in 12 V input, 3.3 V/50 A point-of-load (POL) converters using multiphase buck topology.

IC Role / Device Role: High-current, low-R_DS(on) power switch enabling compact 2-layer PCB layouts with minimal heatsinking.

Use Value: Supports 109 A continuous current without paralleling, reducing component count and layout complexity while maintaining < 40 °C junction rise at full load.

DC/AC Inverters

Industrial Motor Drives

Use Scenario: Half-bridge leg in 24 V battery-powered micro-inverters for portable solar generators and UPS systems.

IC Role / Device Role: Fast-switching N-channel MOSFET in bridge configuration, driven by isolated gate drivers with 4.5 V logic-level compatibility.

Use Value: Q_g = 23 nC @ 4.5 V ensures low driver power consumption and clean switching edges even at 100 kHz PWM frequency.

Use Scenario: Phase-leg switch in 24–48 V BLDC motor controllers for robotics and automated guided vehicles (AGVs).

IC Role / Device Role: High-reliability power switch handling repetitive pulsed currents up to 150 A (I_DM) during motor startup and regenerative braking.

Use Value: 100 % UIS tested and 30 A single-pulse avalanche rating (I_AS) provide robustness against inductive energy spikes during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 2.35 mΩ @ 10 V; slightly lower Q_g (21 nC @ 4.5 V); same PowerPAK SO-8 package.	Better efficiency at very high current (>80 A), but higher cost and tighter gate threshold distribution (V_GS(th) = 1.2–2.2 V vs. 1.1–2.4 V).	Select when marginal efficiency gain justifies premium pricing and tighter V_GS(th) tolerance is acceptable.
IRF7470PBF	SO-8 package (leaded); R_DS(on) = 3.1 mΩ @ 10 V; higher R_thJA (62 °C/W vs. 25 °C/W max); no Q_gd/Q_gs optimization.	Limited to lower-power applications (<20 A continuous); unsuitable for high-density thermal designs due to inferior thermal performance.	Consider only for legacy SO-8 layouts where leaded assembly is mandated and thermal headroom exceeds 40 °C/W.

Compared with SiR626DP-T1-GE3, SIRA58DP-T1-GE3 offers broader V_GS(th) range and lower cost, while outperforming IRF7470PBF in thermal management, switching speed, and avalanche ruggedness - making it optimal for new 40 V high-current power stage designs.

Availability

SIRA58DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high power density DC/DC conversion, and DC/AC inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom OEMs.

Supply support for SIRA58DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIRA58DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 product line, engineered specifically for high-current, high-efficiency power conversion in space-constrained industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIRA58DP-T1-GE3 at 70 °C case temperature?

The SIRA58DP-T1-GE3 supports 87.3 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 109 A rating at 25 °C case temperature and must be used with appropriate PCB copper area and airflow to maintain thermal stability in real-world operation. The SIRA58DP-T1-GE3 datasheet confirms this rating under steady-state conditions with proper heatsinking.

Does SIRA58DP-T1-GE3 support 5 V gate drive in logic-level applications?

Yes, the SIRA58DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 3.60 mΩ max at V_GS = 4.5 V and I_D = 10 A. Its gate threshold voltage range (1.1–2.4 V) ensures reliable turn-on with standard 5 V logic outputs, and its Q_g = 23 nC @ 4.5 V enables efficient driving with low-power gate drivers. The SIRA58DP-T1-GE3 is explicitly rated for such use in Vishay's application notes.

Can SIRA58DP-T1-GE3 be mounted on a standard SO-8 footprint without modification?

Yes, the SIRA58DP-T1-GE3 uses the PowerPAK SO-8 package, which shares identical outline dimensions, pin spacing (1.27 mm pitch), and pin numbering with the standard SO-8. Vishay confirms direct substitution on existing SO-8 land patterns, though thermal performance improves significantly with extended drain copper. The SIRA58DP-T1-GE3 mounting guidelines explicitly validate this compatibility in Application Note AN821.

What is the body diode reverse recovery time (t_rr) of SIRA58DP-T1-GE3, and why does it matter?

The SIRA58DP-T1-GE3 body diode reverse recovery time is 38–76 ns (typ./max) at I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. This fast recovery minimizes voltage overshoot and switching losses during synchronous rectifier dead-time transitions, directly improving efficiency and reducing EMI in buck, flyback, and LLC converters. The SIRA58DP-T1-GE3 datasheet specifies t_rr and Q_rr as guaranteed parameters.

Is SIRA58DP-T1-GE3 suitable for avalanche energy handling in inductive switching circuits?

Yes, the SIRA58DP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 30 A single-pulse avalanche current (I_AS) and 45 mJ single-pulse avalanche energy (E_AS). These values ensure robustness against inductive kickback in motor drives and relay drivers where transient energy must be absorbed internally. The SIRA58DP-T1-GE3 datasheet lists these as absolute maximum ratings with test conditions defined.

SIRA58DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.65mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3750 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 27.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA58DP-T1-GE3 FAQ

1.How can I place an order for SIRA58DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA58DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA58DP-T1-GE3 reliable?

The price and inventory of SIRA58DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA58DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA58DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA58DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA58DP-T1-GE3?

SIRA58DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA58DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA58DP-T1-GE3?

For technical support, including SIRA58DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA58DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA58DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA58DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA58DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA58DP-T1-GE3?

All SIRA58DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA58DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA58DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA58DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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