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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA60DDP-T1-UE3

Name: SIRA60DDP-T1-UE3
Brand: Vishay Siliconix
SKU: SIRA60DDP-T1-UE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA60DDP-T1-UE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA60DDP-T1-UE3.pdf

Description:: N-CHANNEL 30 V (D-S) 150C MOSFET

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Product details

Overview

SIRA60DDP-T1-UE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.90 mΩ at V_GS = 10 V and 1.35 mΩ at V_GS = 4.5 V, with 241 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in VRMs and high-density DC/DC converters.

For engineers reviewing the SIRA60DDP-T1-UE3 datasheet, SIRA60DDP-T1-UE3 pinout, SIRA60DDP-T1-UE3 application, or SIRA60DDP-T1-UE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 39.1 nC total gate charge, 7975 pF input capacitance, thermal resistance R_thJC = 1.2 °C/W, and body diode recovery Q_rr = 73 nC - all critical for high-frequency, high-current power stage design.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance with enhanced switching performance. Its 100 % R_g and UIS tested construction ensures robustness in hard-switching and avalanche-prone topologies like synchronous buck converters.

The device features a single N-channel configuration with integrated source-drain body diode (V_SD = 0.74 V typ. at I_S = 10 A) and fast reverse recovery (t_rr = 54 ns typ., Q_rr = 73 nC), enabling efficient operation in continuous conduction mode (CCM) and high-duty-cycle applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V and 24 V input bus systems in server VRMs and telecom DC/DC.
R_DS(on) @ 10 V	0.90 mΩ max - Enables <1 W conduction loss at 200 A, critical for >95 % efficiency in high-current point-of-load converters.
R_DS(on) @ 4.5 V	1.35 mΩ max - Ensures strong turn-on under low-voltage gate drive from controller ICs with 4.5–5 V output, common in modern multiphase controllers.
Q_g	39.1 nC typ. - Low gate charge reduces driver power demand and enables faster switching transitions, lowering switching losses at 500 kHz–1 MHz.
I_D (continuous)	241 A @ T_C = 25 °C - Supports high-current phases in CPU/GPU VRMs without parallel devices, simplifying layout and reducing component count.
R_thJC	1.2 °C/W typical - Allows direct thermal coupling to heatsink or PCB copper, enabling >100 W dissipation with minimal junction-to-case temperature rise.
Q_rr	73 nC typ. - Low reverse recovery charge minimizes shoot-through risk and EMI during body diode commutation in synchronous rectification.

Pinout & Package

Package: PowerPAK® SO-8 - leadless, surface-mount package with exposed copper drain paddle on bottom side for optimal thermal and electrical performance. Dimensions: 6.15 mm × 5.15 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing; connected internally to source metallization and PCB ground plane.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals tied to exposed copper paddle; primary thermal path to PCB and main current return path in high-side switch configurations.
G (Gate)	Gate (G)	Single gate terminal located at Pin 1 (top view); requires controlled 1 Ω gate resistor to manage dV/dt and prevent oscillation during fast switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables sub-1 mΩ R_DS(on) at 30 V while maintaining rugged avalanche capability (E_AS = 155 mJ).
100 % R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche robustness - essential for reliable operation in unregulated input conditions.
PowerPAK® SO-8 leadless package	Reduces parasitic inductance by >50 % vs. standard SO-8; exposes drain paddle for direct thermal interface to inner-layer copper or heatsink.
Low Q_gd/Q_g ratio	Q_gd = 8 nC / Q_g = 39.1 nC → ~20 % - improves Miller immunity and enables stable operation with high dV/dt (>50 V/ns) in hard-switched topologies.
Body diode t_rr = 54 ns	Fast, soft-recovery body diode eliminates need for external anti-parallel diodes in synchronous rectifier designs operating up to 1 MHz.

Applications

Server VRM Phase Legs	High-Density Telecom DC/DC
Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.6–1.2 V) at up to 600 A peak. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, conducting during PWM low-time with precise timing controlled by VRM controller. Use Value: 0.90 mΩ R_DS(on) limits conduction loss to <0.4 W per phase at 100 A, directly improving system efficiency and reducing thermal load on motherboard layers.	Use Scenario: 48 V–12 V intermediate bus converter in 5G base station power shelves requiring >96 % efficiency and compact footprint. IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in interleaved LLC or phase-shifted full-bridge topology. Use Value: 39.1 nC Q_g and 1.35 mΩ R_DS(on) at 4.5 V enable efficient operation with TI UCC28950 or Infineon ICE2HS01G controllers driving at 300–600 kHz.
GPU Power Delivery Modules	Industrial PLC Power Supplies
Use Scenario: Compact, fanless GPU power module delivering 300–500 W with strict thermal envelope (<65 °C case temp). IC Role / Device Role / Timing Role: Dual-role device functioning as both high-side switch and synchronous rectifier in adaptive voltage positioning (AVP) circuits. Use Value: R_thJC = 1.2 °C/W allows direct mounting to aluminum-core PCB, achieving 45 °C junction rise at 200 W dissipation - enabling passive cooling.	Use Scenario: DIN-rail mounted 24 V industrial power supply supporting real-time I/O modules with surge immunity requirements. IC Role / Device Role / Timing Role: Output rectifier in active-clamp forward or synchronous flyback converter handling 20–30 A continuous load. Use Value: 155 mJ E_AS rating withstands repetitive line surges and inductive kickback from solenoid loads without derating or snubbers.

Server VRM Phase Legs

High-Density Telecom DC/DC

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.6–1.2 V) at up to 600 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, conducting during PWM low-time with precise timing controlled by VRM controller.

Use Value: 0.90 mΩ R_DS(on) limits conduction loss to <0.4 W per phase at 100 A, directly improving system efficiency and reducing thermal load on motherboard layers.

Use Scenario: 48 V–12 V intermediate bus converter in 5G base station power shelves requiring >96 % efficiency and compact footprint.

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in interleaved LLC or phase-shifted full-bridge topology.

Use Value: 39.1 nC Q_g and 1.35 mΩ R_DS(on) at 4.5 V enable efficient operation with TI UCC28950 or Infineon ICE2HS01G controllers driving at 300–600 kHz.

GPU Power Delivery Modules

Industrial PLC Power Supplies

Use Scenario: Compact, fanless GPU power module delivering 300–500 W with strict thermal envelope (<65 °C case temp).

IC Role / Device Role / Timing Role: Dual-role device functioning as both high-side switch and synchronous rectifier in adaptive voltage positioning (AVP) circuits.

Use Value: R_thJC = 1.2 °C/W allows direct mounting to aluminum-core PCB, achieving 45 °C junction rise at 200 W dissipation - enabling passive cooling.

Use Scenario: DIN-rail mounted 24 V industrial power supply supporting real-time I/O modules with surge immunity requirements.

IC Role / Device Role / Timing Role: Output rectifier in active-clamp forward or synchronous flyback converter handling 20–30 A continuous load.

Use Value: 155 mJ E_AS rating withstands repetitive line surges and inductive kickback from solenoid loads without derating or snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL6217PBF	R_DS(on) = 1.8 mΩ @ 4.5 V; Q_g = 32 nC; TO-220 package; R_thJC = 1.5 °C/W	Higher R_DS(on) increases conduction loss by ~35 %; through-hole mounting limits board density and thermal via integration.	Preferred where legacy TO-220 layout exists and lower cost outweighs efficiency loss; not suitable for >300 A systems.
SIS840DP-T1-GE3	R_DS(on) = 0.75 mΩ @ 10 V; Q_g = 47 nC; same PowerPAK SO-8; higher C_iss = 9200 pF	Lower on-resistance improves conduction loss but higher gate charge increases driver loss and slows switching at >1 MHz.	Better for low-frequency, high-current applications (e.g., motor drives); less optimal than SIRA60DDP-T1-UE3 for high-frequency VRMs.

Compared with IRL6217PBF and SIS840DP-T1-GE3, SIRA60DDP-T1-UE3 delivers the best balance of ultra-low R_DS(on) at 4.5 V, moderate Q_g, and industry-leading thermal resistance - making it the preferred choice for space-constrained, high-efficiency 30 V synchronous rectifiers.

Availability

SIRA60DDP-T1-UE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and GPU power delivery modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SIRA60DDP-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.

The SIRA60DDP-T1-UE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in advanced computing and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIRA60DDP-T1-UE3 at 70 °C case temperature?

The SIRA60DDP-T1-UE3 supports 193 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-power operation and must be validated against actual board-level thermal design using R_thJC = 1.2 °C/W and ambient conditions.

Does SIRA60DDP-T1-UE3 have a qualified avalanche rating, and what is its value?

Yes, SIRA60DDP-T1-UE3 is rated for single-pulse avalanche energy E_AS = 155 mJ (L = 0.1 mH) and single-pulse avalanche current I_AS = 56 A. These values are measured and guaranteed per JEDEC JESD24-11, confirming robustness in inductive switching events common in VRM and DC/DC converter fault conditions.

Can SIRA60DDP-T1-UE3 be used with 3.3 V gate drive in a synchronous buck converter?

No - SIRA60DDP-T1-UE3 is not characterized or guaranteed for operation below V_GS = 4.5 V. Its R_DS(on) specification begins at 4.5 V, and threshold voltage V_GS(th) ranges from 1.1 V to 2.2 V; 3.3 V drive risks incomplete turn-on and excessive conduction loss. Use only with ≥4.5 V gate drivers.

What is the body diode forward voltage of SIRA60DDP-T1-UE3 at 10 A source current?

The body diode forward voltage V_SD of SIRA60DDP-T1-UE3 is 0.74 V typical and 1.1 V maximum at I_S = 10 A and T_J = 25 °C, as stated in the Drain-Source Body Diode Characteristics section. This low V_SD supports efficient freewheeling during dead-time intervals in synchronous rectification.

Is SIRA60DDP-T1-UE3 RoHS-compliant and halogen-free?

Yes, SIRA60DDP-T1-UE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section and Vishay's material compliance documentation (www.vishay.com/doc?99912). It meets RoHS Directive 2011/65/EU and JEDEC JS709E standards for hazardous substance restrictions.

SIRA60DDP-T1-UE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Ta), 241A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 7975 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.7W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA60DDP-T1-UE3 FAQ

1.How can I place an order for SIRA60DDP-T1-UE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA60DDP-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA60DDP-T1-UE3 reliable?

The price and inventory of SIRA60DDP-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA60DDP-T1-UE3 is usually 5 days.

3.What payment methods are accepted for SIRA60DDP-T1-UE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA60DDP-T1-UE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA60DDP-T1-UE3?

SIRA60DDP-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA60DDP-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA60DDP-T1-UE3?

For technical support, including SIRA60DDP-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA60DDP-T1-UE3 requirements.

6.How does Aetrix verify that SIRA60DDP-T1-UE3 is sourced from the original manufacturer or authorized distributors?

All SIRA60DDP-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA60DDP-T1-UE3 meets industry standards.

7.What is the process for return or replacement of SIRA60DDP-T1-UE3?

All SIRA60DDP-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA60DDP-T1-UE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA60DDP-T1-UE3 part is unused and in its original packaging.

Return procedure for SIRA60DDP-T1-UE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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