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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA60DP-T1-UE3

Name: SIRA60DP-T1-UE3
Brand: Vishay Siliconix
SKU: SIRA60DP-T1-UE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA60DP-T1-UE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA60DP-T1-UE3.pdf

Description:: N-CHANNEL 30 V (D-S) MOSFET 150

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Product details

Overview

SIRA60DP-T1-UE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 single package, delivering R_DS(on) = 0.94 mΩ at V_GS = 10 V and 1.35 mΩ at V_GS = 4.5 V, rated for 100 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.

For engineers reviewing the SIRA60DP-T1-UE3 datasheet, SIRA60DP-T1-UE3 pinout, SIRA60DP-T1-UE3 application, or SIRA60DP-T1-UE3 equivalent, this page provides verified technical context, thermal performance data, gate charge characteristics, body diode behavior, and validated alternative options for high-current, low-voltage switching designs.

Technical Context

This MOSFET employs a trench-based silicon structure enabling ultra-low on-resistance with robust avalanche capability (E_AS = 80 mJ), fully tested for R_g and UIS reliability. Its gate threshold voltage (V_GS(th) = 1.1–2.2 V) supports 4.5 V logic-level drive while maintaining tight parametric distribution.

The PowerPAK® SO-8 single package features exposed copper drain pads on the bottom side, delivering R_thJC = 1.2 °C/W (typ.) and matching DPAK thermal performance - not achievable with standard SO-8 - while retaining identical PCB footprint and pinout compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems
R_DS(on) @ 10 V	0.94 mΩ max - Enables <1 W conduction loss at 100 A in high-current VRM phases
R_DS(on) @ 4.5 V	1.35 mΩ max - Ensures stable operation with 5 V or 4.5 V gate drivers in compact DC/DC modules
Q_g	38 nC typ. @ 4.5 V - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) operation
I_D (cont.)	100 A @ T_C = 25 °C - High current rating supports single-device phase legs in server and telecom power supplies
R_thJC	1.2 °C/W typ. - Enables direct thermal coupling to PCB copper, eliminating need for external heatsinks in many applications
V_SD	0.70 V typ. @ I_S = 10 A - Low body diode forward voltage minimizes reverse recovery losses during synchronous rectification dead-time

Pinout & Package

PowerPAK® SO-8 single package: 5.15 mm × 6.15 mm footprint, 1.04 mm height, leadless construction with exposed drain copper on bottom side; compatible with standard SO-8 land patterns but requires extended drain pad for optimal thermal performance per AN821.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection with bottom-side exposed copper enables <1.2 °C/W junction-to-case thermal path
Gate (G)	Gate (G)	Single gate terminal located at Pin 1 position (top-left corner); optimized for low-inductance gate loop layout

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 0.94 mΩ R_DS(on) in SO-8 footprint - 3× lower than previous-gen equivalents at same voltage rating
100 % R_g and UIS tested	Guarantees gate resistance consistency (<1.7 Ω) and single-pulse avalanche robustness (I_AS = 40 A, E_AS = 80 mJ)
PowerPAK® SO-8 thermal design	Matches DPAK R_thJC (1.2 °C/W) while fitting SO-8 PCB area - eliminates thermal derating penalties in space-constrained layouts
Low Q_gd/Q_g ratio	Q_gd = 4.7 nC / Q_g ≈ 12 % - Improves hard-switching immunity and reduces Miller-induced shoot-through risk
Body diode t_rr	63 ns typ. - Fast reverse recovery minimizes cross-conduction losses in synchronous buck topologies

Applications

Server VRM Phase Legs	Telecom DC/DC Converters
Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–1000 kHz with 4.5 V gate drive. Use Value: 0.94 mΩ R_DS(on) limits conduction loss to <1.2 W at 100 A, while 38 nC Q_g enables efficient high-frequency switching without excessive gate driver dissipation.	Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power architecture. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology. Use Value: 30 V rating accommodates 48 V nominal input with margin; 100 A ID rating supports >1 kW output with parallel devices.
Industrial PLC Power Modules	Automotive ADAS Domain Controllers
Use Scenario: Compact 24 V input DC/DC module powering FPGA, memory, and I/O in programmable logic controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter. Use Value: Low V_SD (0.70 V) and fast t_rr (63 ns) reduce body diode conduction loss during dead-time, improving efficiency by ≥1.2 % over standard SO-8 alternatives.	Use Scenario: 12 V input point-of-load regulator supplying vision processor SoCs in autonomous driving ECUs. IC Role / Device Role / Timing Role: High-current, low-voltage power stage MOSFET in dual-phase buck controller IC reference design. Use Value: PowerPAK SO-8's 1.2 °C/W R_thJC maintains T_J < 125 °C under full load at 85 °C ambient - avoids thermal throttling in sealed enclosures.

Server VRM Phase Legs

Telecom DC/DC Converters

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–1000 kHz with 4.5 V gate drive.

Use Value: 0.94 mΩ R_DS(on) limits conduction loss to <1.2 W at 100 A, while 38 nC Q_g enables efficient high-frequency switching without excessive gate driver dissipation.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology.

Use Value: 30 V rating accommodates 48 V nominal input with margin; 100 A ID rating supports >1 kW output with parallel devices.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: Compact 24 V input DC/DC module powering FPGA, memory, and I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter.

Use Value: Low V_SD (0.70 V) and fast t_rr (63 ns) reduce body diode conduction loss during dead-time, improving efficiency by ≥1.2 % over standard SO-8 alternatives.

Use Scenario: 12 V input point-of-load regulator supplying vision processor SoCs in autonomous driving ECUs.

IC Role / Device Role / Timing Role: High-current, low-voltage power stage MOSFET in dual-phase buck controller IC reference design.

Use Value: PowerPAK SO-8's 1.2 °C/W R_thJC maintains T_J < 125 °C under full load at 85 °C ambient - avoids thermal throttling in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.75 mΩ @ 10 V; Q_g = 45 nC; same PowerPAK SO-8 package	Lower R_DS(on) improves conduction loss but increases gate drive requirement	Preferred where <0.8 mΩ on-resistance is critical and gate driver can support higher Q_g
IRLHS6242TRPBF	R_DS(on) = 1.1 mΩ @ 4.5 V; Q_g = 32 nC; PQFN 5x6 mm package with different pinout	Smaller footprint but no pinout compatibility; lower thermal mass affects transient thermal response	Selected when board space is constrained and re-layout is acceptable

Compared with SiR626DP-T1-GE3, SIRA60DP-T1-UE3 trades 0.19 mΩ higher R_DS(on) for 7 nC lower Q_g, favoring high-frequency efficiency; versus IRLHS6242TRPBF, it offers superior thermal resistance (1.2 vs. ~2.0 °C/W) and proven SO-8 drop-in replacement capability in legacy designs.

Availability

SIRA60DP-T1-UE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIRA60DP-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal innovation.

The SIRA60DP-T1-UE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, low-voltage synchronous rectification and switching in next-generation computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SIRA60DP-T1-UE3 at 70 °C case temperature?

The SIRA60DP-T1-UE3 is rated for 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited conduction capability under steady-state thermal conditions with adequate PCB copper heatsinking, and is identical to its rating at T_C = 25 °C due to the PowerPAK® SO-8's low R_thJC.

Does SIRA60DP-T1-UE3 support 3.3 V gate drive in practical applications?

SIRA60DP-T1-UE3 has a gate threshold voltage range of 1.1–2.2 V, but its R_DS(on) is only specified at V_GS = 4.5 V and 10 V. At 3.3 V, R_DS(on) rises significantly - typical curves show ~2.5 mΩ - making it unsuitable for high-efficiency operation at 3.3 V gate drive; use only with ≥4.5 V logic-level drivers.

How does the PowerPAK® SO-8 package of SIRA60DP-T1-UE3 differ thermally from a standard SO-8 MOSFET?

The SIRA60DP-T1-UE3's PowerPAK® SO-8 delivers R_thJC = 1.2 °C/W (typ.), matching DPAK performance, whereas standard SO-8 packages typically exhibit R_thJC ≈ 16 °C/W. This 13× improvement enables direct die-to-PCB thermal transfer via the exposed bottom-side drain pad, drastically reducing junction temperature rise under load.

Is SIRA60DP-T1-UE3 pin-compatible with standard SO-8 footprints?

Yes - the SIRA60DP-T1-UE3 uses the exact same 5.15 mm × 6.15 mm outline and pin numbering as standard SO-8, with drain (Pins 5–8), source (Pins 1–4), and gate (Pin 1 location) mapped identically. However, optimal thermal performance requires extending the drain pad beyond the standard SO-8 land pattern per Application Note AN821.

What is the typical body diode reverse recovery charge (Q_rr) for SIRA60DP-T1-UE3?

The SIRA60DP-T1-UE3 exhibits Q_rr = 87 nC (typ.) and 175 nC (max.) under test conditions of I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. This low Q_rr value, combined with t_rr = 63 ns (typ.), makes it well-suited for synchronous rectification where body diode conduction must be minimized.

SIRA60DP-T1-UE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.94mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 7650 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA60DP-T1-UE3 FAQ

1.How can I place an order for SIRA60DP-T1-UE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA60DP-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA60DP-T1-UE3 reliable?

The price and inventory of SIRA60DP-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA60DP-T1-UE3 is usually 5 days.

3.What payment methods are accepted for SIRA60DP-T1-UE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA60DP-T1-UE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA60DP-T1-UE3?

SIRA60DP-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA60DP-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA60DP-T1-UE3?

For technical support, including SIRA60DP-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA60DP-T1-UE3 requirements.

6.How does Aetrix verify that SIRA60DP-T1-UE3 is sourced from the original manufacturer or authorized distributors?

All SIRA60DP-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA60DP-T1-UE3 meets industry standards.

7.What is the process for return or replacement of SIRA60DP-T1-UE3?

All SIRA60DP-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA60DP-T1-UE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA60DP-T1-UE3 part is unused and in its original packaging.

Return procedure for SIRA60DP-T1-UE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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