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Vishay Siliconix SIRA62DDP-T1-UE3
- Part No.:
- SIRA62DDP-T1-UE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA62DDP-T1-UE3.pdf
- Description:
- N-CHANNEL 30 V (D-S) MOSFET 150C
- Quantity:
- Payment:
- Shipping:
Inventory:6,444
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Product details
Overview
SIRA62DDP-T1-UE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 1.22 mΩ at VGS = 10 V and 1.95 mΩ at VGS = 4.5 V, with 20.8 nC total gate charge (Qg) and 191 A continuous drain current (TC = 25 °C), optimized for high-power-density DC/DC converters and synchronous rectification.
For engineers reviewing the SIRA62DDP-T1-UE3 datasheet, SIRA62DDP-T1-UE3 pinout, SIRA62DDP-T1-UE3 application, or SIRA62DDP-T1-UE3 equivalent, this page provides verified electrical parameters, thermal resistance values (RthJC = 1.4 °C/W max), body diode characteristics (VSD = 0.75–1.1 V), and layout-critical package dimensions for PowerPAK SO-8 single-pad mounting.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low RDS(on) × Qg figure-of-merit, enabling high-efficiency switching in hard-switched and synchronous rectifier topologies. Its 30 V VDS rating supports 12 V and 24 V input rails with margin for transient spikes up to 36 V (VDSt).
The device features 100 % Rg and UIS tested units, a gate-source voltage range of ±20 V / −16 V, and integrated body diode with trr = 45–90 ns and Qrr = 45–90 nC - critical for minimizing reverse recovery losses in OR-ing and load switch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 12 V/24 V bus systems with 20 % transient margin (VDSt = 36 V) |
| RDS(on) @ 10 V | 1.22 mΩ max - enables <1 W conduction loss at 100 A in high-current power stages |
| RDS(on) @ 4.5 V | 1.95 mΩ max - ensures robust operation with 5 V gate drive in logic-level control circuits |
| Qg @ 4.5 V | 20.8 nC typ. - reduces gate drive power and enables fast switching with low Esw |
| ID (continuous) | 191 A @ TC = 25 °C - suitable for high-current point-of-load regulators without external heatsinking |
| RthJC | 1.4 °C/W typical - allows direct thermal coupling to PCB copper or heatsink for high-power dissipation |
| VSD | 0.75–1.1 V @ IS = 10 A - low forward drop improves efficiency in bidirectional current paths |
| EAS | 102 mJ - withstands single-pulse avalanche energy during inductive turn-off transients |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, single-pad configuration), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), exposed drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to exposed bottom paddle - primary thermal path and high-current return |
| G (Pin 1 top-side marking) | Gate (G) | Single gate terminal located at corner - requires controlled trace routing to minimize ringing and EMI |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables industry-leading RDS(on) × Qg FOM for reduced conduction + switching losses in 30 V power stages |
| 100 % Rg and UIS tested | Guarantees gate robustness and avalanche reliability per unit - no screening failures in production lots |
| Exposed drain paddle | Provides <1.4 °C/W junction-to-case thermal resistance - enables >70 W steady-state dissipation with minimal PCB copper |
| Low Qrr body diode | 45–90 nC reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectifier operation |
| Lead (Pb)-free, halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| High-Power-Density DC/DC Converters | Synchronous Rectification |
|---|---|
|
Use Scenario: 48 V to 12 V isolated buck converter operating at 300 kHz in telecom server power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier (with complementary driver). Use Value: 1.22 mΩ RDS(on) at 10 V reduces conduction loss by >35 % vs. legacy 30 V MOSFETs, enabling >96 % peak efficiency at 100 A output. |
Use Scenario: Secondary-side rectification in 12 V output stage of LLC resonant converter for AI accelerator racks. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by gate signal referenced to source. Use Value: 0.75 V VSD and 45 ns trr cut body diode conduction loss and reverse recovery loss, improving light-load efficiency by 2.1 %. |
| Load Switching | OR-ing Circuits |
|
Use Scenario: Hot-swap controller interface for redundant 12 V power rails in industrial PLC backplanes. IC Role / Device Role / Timing Role: Single N-channel load switch with external gate driver for inrush current limiting and fault protection. Use Value: 191 A ID rating and 102 mJ EAS support safe turn-on under full capacitive load without SOA violation. |
Use Scenario: Redundant 24 V input OR-ing for edge gateway with dual PoE++ injectors. IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for bidirectional blocking and low-loss forward conduction. Use Value: 1.95 mΩ RDS(on) at 4.5 V ensures <0.5 V dropout at 80 A, reducing heat generation and eliminating need for active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL6217PBF | RDS(on) = 2.2 mΩ @ 4.5 V; Qg = 27 nC; TO-220 package; RthJC = 1.0 °C/W but larger footprint | Higher conduction loss and slower switching; requires heatsink for >50 A operation | Prefer when mechanical mounting or legacy TO-220 layout compatibility is required over PCB space savings |
| DMTH3007LPS-13 | RDS(on) = 1.35 mΩ @ 10 V; Qg = 23.5 nC; PowerPAK 5x6 package; slightly higher RDS(on) at 4.5 V (2.15 mΩ) | Similar thermal performance but 0.5 mm taller profile limits ultra-low-profile designs | Choose when existing 5x6 footprint reuse is prioritized and 0.13 mΩ RDS(on) penalty is acceptable |
Compared with IRL6217PBF and DMTH3007LPS-13, SIRA62DDP-T1-UE3 delivers the lowest RDS(on) × Qg FOM in PowerPAK SO-8, enabling highest power density in space-constrained 12–24 V systems without sacrificing avalanche ruggedness or thermal performance.
Availability
SIRA62DDP-T1-UE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, synchronous rectification modules, and industrial load switch applications requiring stable component supply and long-term manufacturing continuity.
Supply support for SIRA62DDP-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA62DDP-T1-UE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency switching in server, telecom, and industrial power supplies where low RDS(on), fast switching, and thermal robustness are critical.
FAQ
What is the maximum continuous drain current rating for SIRA62DDP-T1-UE3 at 70 °C case temperature?
The SIRA62DDP-T1-UE3 supports 153 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance and is validated under steady-state conditions with proper PCB copper area and airflow. The SIRA62DDP-T1-UE3 maintains safe operation within its Safe Operating Area (SOA) curve up to this current level when mounted on a 1" × 1" FR4 board with recommended pad layout.
Does SIRA62DDP-T1-UE3 have a guaranteed avalanche rating, and what is its single-pulse energy capability?
Yes, the SIRA62DDP-T1-UE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy (EAS) of 102 mJ at TJ = 25 °C with L = 0.1 mH. This rating ensures reliable operation during inductive turn-off events in DC/DC converters and motor drives. The SIRA62DDP-T1-UE3 also supports single-pulse avalanche current (IAS) of 45 A, confirmed per JEDEC JESD24-1 test methodology.
What is the gate threshold voltage range for SIRA62DDP-T1-UE3, and how does it vary with temperature?
The SIRA62DDP-T1-UE3 has a gate-source threshold voltage (VGS(th)) range of 1.0 V to 2.2 V at TJ = 25 °C, with a negative temperature coefficient of −4.9 mV/°C. This means VGS(th) decreases as junction temperature rises - critical for ensuring turn-on margin across −55 °C to +150 °C operating range. The SIRA62DDP-T1-UE3 remains fully enhanced down to 1.0 V gate drive at elevated temperatures, supporting robust 3.3 V and 5 V logic-level control.
Can SIRA62DDP-T1-UE3 be used in OR-ing applications with back-to-back configuration, and what design considerations apply?
Yes, the SIRA62DDP-T1-UE3 is commonly deployed in back-to-back N-channel OR-ing configurations for redundant 12 V or 24 V inputs. Key design considerations include using matched gate drivers with precise timing to avoid shoot-through, ensuring gate voltage exceeds 4.5 V for low RDS(on), and verifying that body diode reverse recovery (trr = 45–90 ns) does not cause cross-conduction. The SIRA62DDP-T1-UE3's low Qrr (45–90 nC) and symmetric SO-8 layout simplify PCB routing in such topologies.
What is the thermal resistance from junction to ambient (RthJA) for SIRA62DDP-T1-UE3 on a standard 1" × 1" FR4 board?
On a 1" × 1" FR4 board (2 oz copper, 1"² pad), the SIRA62DDP-T1-UE3 has a maximum RthJA of 25 °C/W (typical 20 °C/W) for t ≤ 10 s pulses. This value assumes the recommended minimum pad layout per Application Note 826 (doc#72599). For steady-state operation, RthJA increases significantly - hence the SIRA62DDP-T1-UE3 is typically thermally managed via its low RthJC (1.4 °C/W) to external heatsinks or internal PCB planes rather than relying on ambient convection alone.
SIRA62DDP-T1-UE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 51A (Ta), 191A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.22Ohm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4344 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 71W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA62DDP-T1-UE3 FAQ
1.How can I place an order for SIRA62DDP-T1-UE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA62DDP-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA62DDP-T1-UE3 reliable?
The price and inventory of SIRA62DDP-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA62DDP-T1-UE3 is usually 5 days.
3.What payment methods are accepted for SIRA62DDP-T1-UE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA62DDP-T1-UE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA62DDP-T1-UE3?
SIRA62DDP-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA62DDP-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA62DDP-T1-UE3?
For technical support, including SIRA62DDP-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA62DDP-T1-UE3 requirements.
6.How does Aetrix verify that SIRA62DDP-T1-UE3 is sourced from the original manufacturer or authorized distributors?
All SIRA62DDP-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA62DDP-T1-UE3 meets industry standards.
7.What is the process for return or replacement of SIRA62DDP-T1-UE3?
All SIRA62DDP-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA62DDP-T1-UE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA62DDP-T1-UE3 part is unused and in its original packaging.
Return procedure for SIRA62DDP-T1-UE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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