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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA62DP-T1-RE3

Name: SIRA62DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA62DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA62DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA62DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 51.4A/80A PPAK

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Product details

Overview

SIRA62DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.20 mΩ at V_GS = 10 V and 1.85 mΩ at V_GS = 4.5 V, with 28.7 nC typical gate charge and 80 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous buck converters and OR-ing applications.

For engineers reviewing the SIRA62DP-T1-RE3 datasheet, SIRA62DP-T1-RE3 pinout, SIRA62DP-T1-RE3 application, or SIRA62DP-T1-RE3 equivalent, this page provides verified thermal resistance values (R_thJC = 1.5 °C/W max), body diode recovery metrics (t_rr = 16–112 ns), UIS-tested ruggedness, and PowerPAK SO-8 terminal mapping critical for PCB layout and thermal design validation.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low R_DS(on) × Q_g figure-of-merit for switch-mode power supplies, with gate threshold voltage (V_GS(th)) ranging from 1.0 V to 2.2 V and guaranteed 100 % UIS testing per production lot. Its dynamic parameters include C_iss = 4460 pF, C_oss = 1615 pF, and C_rss = 202 pF at V_DS = 15 V.

The device supports fast switching with t_d(on) = 12–50 ns and t_f = 10–42 ns depending on drive condition (V_GEN = 10 V or 4.5 V, R_g = 1 Ω), and integrates a robust intrinsic body diode with V_SD = 0.72–1.1 V at I_S = 5 A and Q_rr = 66–132 nC for synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operation in ≤30 V bus systems like 12 V/24 V DC/DC stages.
R_DS(on) @ 10 V	1.20 mΩ max - Enables <1 W conduction loss at 80 A, critical for high-current power stages.
R_DS(on) @ 4.5 V	1.85 mΩ max - Ensures low-loss operation with 4.5 V gate drive from standard logic-level controllers.
Q_g typ.	28.7 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in compact designs.
I_D cont. (T_C = 25 °C)	80 A - Continuous current rating under heatsink-cooled conditions; requires R_thJC ≤ 1.9 °C/W path.
R_thJC	1.5 °C/W typical - Junction-to-case thermal resistance enables efficient heat transfer to PCB copper or external heatsink.
t_rr	16–112 ns - Body diode reverse recovery time range impacts EMI and shoot-through risk in synchronous rectifiers.

Pinout & Package

PowerPAK® SO-8 single-package with exposed-drain thermal pad on bottom side; leadless construction requires controlled reflow profile (peak 260 °C) and avoids manual soldering per Vishay recommendation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt paths.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to thermal pad; primary heat extraction path to PCB ground plane.
G (Pin 1 top view)	Gate (G)	Single gate input located adjacent to source; minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g FOM for reduced conduction + switching losses in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate resistance consistency and avalanche energy handling (E_AS = 45 mJ) for system-level reliability.
PowerPAK SO-8 package	Enables 3× lower R_thJA vs. standard SO-8 via exposed copper drain pad, supporting higher power density layouts.
Body diode Q_rr = 66–132 nC	Reduces reverse recovery losses and associated EMI in synchronous rectifier and OR-ing configurations.
V_GS(th) = 1.0–2.2 V	Guaranteed logic-level turn-on compatible with 3.3 V and 5 V microcontrollers and PWM controllers.

Applications

Synchronous Buck Converter	High-Power-Density DC/DC
Use Scenario: Primary high-side switch in multiphase 12 V input → 1 V output VRM for AI accelerators. IC Role / Device Role: High-current, low-R_DS(on) power switch managing up to 80 A per phase with minimal conduction loss. Use Value: Achieves >95 % efficiency at 500 kHz due to 1.20 mΩ R_DS(on) and 28.7 nC Q_g, reducing thermal load on VRM PCB.	Use Scenario: Compact 48 V to 12 V intermediate bus converter in telecom shelf power modules. IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes to cut forward voltage drop. Use Value: Eliminates ~0.4 V diode drop, lowering rectifier loss by >60 % and enabling smaller heatsinks.
Load Switch	OR-ing Circuit
Use Scenario: Hot-swap in-server 48 V distribution with inrush current limiting and fault protection. IC Role / Device Role: Single N-channel load switch controlling power delivery to downstream subsystems. Use Value: Supports 80 A steady-state current with integrated body diode enabling bidirectional current sensing.	Use Scenario: Redundant 12 V power supply combining using ideal diode control in data center PSUs. IC Role / Device Role: Low-V_SD (0.72–1.1 V) OR-ing MOSFET replacing discrete diodes to minimize voltage drop. Use Value: Reduces forward drop by >70 % vs. Schottky, improving system efficiency and thermal margin.

Synchronous Buck Converter

High-Power-Density DC/DC

Use Scenario: Primary high-side switch in multiphase 12 V input → 1 V output VRM for AI accelerators.

IC Role / Device Role: High-current, low-R_DS(on) power switch managing up to 80 A per phase with minimal conduction loss.

Use Value: Achieves >95 % efficiency at 500 kHz due to 1.20 mΩ R_DS(on) and 28.7 nC Q_g, reducing thermal load on VRM PCB.

Use Scenario: Compact 48 V to 12 V intermediate bus converter in telecom shelf power modules.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes to cut forward voltage drop.

Use Value: Eliminates ~0.4 V diode drop, lowering rectifier loss by >60 % and enabling smaller heatsinks.

Load Switch

OR-ing Circuit

Use Scenario: Hot-swap in-server 48 V distribution with inrush current limiting and fault protection.

IC Role / Device Role: Single N-channel load switch controlling power delivery to downstream subsystems.

Use Value: Supports 80 A steady-state current with integrated body diode enabling bidirectional current sensing.

Use Scenario: Redundant 12 V power supply combining using ideal diode control in data center PSUs.

IC Role / Device Role: Low-V_SD (0.72–1.1 V) OR-ing MOSFET replacing discrete diodes to minimize voltage drop.

Use Value: Reduces forward drop by >70 % vs. Schottky, improving system efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242TRPBF	R_DS(on) = 1.35 mΩ @ 10 V; Q_g = 25.5 nC; same PowerPAK SO-8 footprint but lower gate charge.	Marginally lower conduction loss at 10 V drive; slightly reduced switching loss due to lower Q_g.	Preferred when gate drive voltage ≥10 V and ultra-low switching loss is prioritized over 4.5 V compatibility.
SIR178DP-T1-RE3	R_DS(on) = 1.75 mΩ @ 10 V; Q_g = 22.5 nC; identical package and pinout, but higher R_DS(on) and lower Q_g.	Higher conduction loss but faster switching; better suited for >1 MHz operation where Q_g dominates loss.	Recommended for high-frequency isolated DC/DC where gate drive strength limits and switching loss outweighs conduction loss.

Compared with SIRA62DP-T1-RE3, IRLHS6242TRPBF offers lower Q_g for reduced driver loss but requires stronger gate drive, while SIR178DP-T1-RE3 trades higher R_DS(on) for even lower Q_g, making it optimal for very high-frequency designs where conduction loss is secondary.

Availability

SIRA62DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-power-density DC/DC modules, and OR-ing circuits requiring stable component supply across industrial, telecom, and computing applications.

Supply support for SIRA62DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK SO-8 family-including SIRA62DP-T1-RE3-is engineered for high-current, high-frequency power conversion in space-constrained applications such as server VRMs and telecom power supplies.

FAQ

What is the maximum junction temperature rating for SIRA62DP-T1-RE3?

The SIRA62DP-T1-RE3 has an operating junction temperature range of -55 °C to +150 °C. This 150 °C maximum allows sustained operation in thermally demanding environments like enclosed server power supplies, provided thermal design maintains T_J ≤ 150 °C using its R_thJC = 1.5 °C/W path. Derating curves in the datasheet define current limits versus case temperature.

Does SIRA62DP-T1-RE3 support 4.5 V gate drive in practical applications?

Yes, SIRA62DP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 1.85 mΩ max and guaranteed turn-on at V_GS(th) ≤ 2.2 V. It is widely deployed with 3.3 V and 4.5 V gate drivers in synchronous rectifiers and load switches, where its low threshold ensures robust enhancement without level-shifting circuitry.

How is thermal performance validated for SIRA62DP-T1-RE3 in the PowerPAK SO-8 package?

Thermal performance of SIRA62DP-T1-RE3 is validated via R_thJC = 1.5 °C/W (typical) and R_thJA = 20–24 °C/W (max, t ≤ 10 s), measured per JEDEC standards on 1" × 1" FR4 board. The exposed drain pad on the bottom side serves as the primary thermal path, requiring proper PCB copper area and via stitching to maximize heat dissipation in real-world layouts.

Is SIRA62DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIRA62DP-T1-RE3 is qualified for synchronous rectification in LLC converters due to its fast body diode (t_rr = 16–112 ns, Q_rr = 66–132 nC) and low V_SD (0.72–1.1 V). Its low Q_g and R_DS(on) minimize switching and conduction losses during zero-voltage switching transitions, directly improving full-load efficiency in 48 V–12 V isolated stages.

What does "100 % UIS tested" mean for SIRA62DP-T1-RE3?

"100 % UIS tested" means every SIRA62DP-T1-RE3 unit undergoes production-level Unclamped Inductive Switching stress test at I_AS = 30 A and E_AS = 45 mJ. This validates ruggedness against inductive energy spikes during hard-switching events-critical for reliability in motor drives, DC/DC converters, and hot-swap circuits where transient overvoltage may occur.

SIRA62DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 51.4A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 4460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA62DP-T1-RE3 FAQ

1.How can I place an order for SIRA62DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA62DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA62DP-T1-RE3 reliable?

The price and inventory of SIRA62DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA62DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA62DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA62DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA62DP-T1-RE3?

SIRA62DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA62DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA62DP-T1-RE3?

For technical support, including SIRA62DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA62DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA62DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA62DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA62DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA62DP-T1-RE3?

All SIRA62DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA62DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA62DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA62DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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