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Vishay Siliconix SIRA64DP-T1-GE3
- Part No.:
- SIRA64DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA64DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,245
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Product details
Overview
SIRA64DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 2.10 mΩ at VGS = 10 V and 2.86 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRA64DP-T1-GE3 datasheet, SIRA64DP-T1-GE3 pinout, SIRA64DP-T1-GE3 application, or SIRA64DP-T1-GE3 equivalent, this device supports low-loss switching in VRMs, load switching, and high-power-density buck converters where gate charge optimization (Qg = 19.7 nC typ. at 4.5 V) and robust UIS testing are critical selection criteria.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low RDS(on) and a carefully balanced Qgd/Qgs ratio (0.024–0.048), minimizing switching losses in hard-switched and synchronous rectifier topologies. Its 100 % Rg and UIS tested construction ensures gate robustness and avalanche reliability under transient stress.
The PowerPAK® SO-8 leadless package delivers low thermal resistance (RthJC = 3.4 °C/W typ.) and high current capability via exposed copper drain pads on the bottom side. It is qualified for reflow soldering per JEDEC J-STD-020, with peak temperature up to 260 °C - manual iron rework is not recommended.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input systems |
| RDS(on) @ 10 V | 2.10 mΩ max - enables <1.3 W conduction loss at 60 A, critical for high-current VRM output stages |
| RDS(on) @ 4.5 V | 2.86 mΩ max - ensures stable on-state performance with logic-level gate drive in space-constrained DC/DC designs |
| Qg @ 4.5 V | 19.7 nC typ. - reduces gate driver power demand and switching transition time in high-frequency (>500 kHz) applications |
| ID (continuous) | 60 A @ TC = 25 °C - supports high-current synchronous rectification without external heatsinking when mounted on 1" × 1" FR4 |
| RthJC | 3.4 °C/W typ. - enables efficient heat transfer to PCB copper or heatsink, supporting >20 W power dissipation in thermally managed layouts |
| VGS(th) | 1.1–2.2 V - provides reliable turn-on margin with standard 3.3 V or 5 V controllers while avoiding false triggering |
| Qrr | 34–70 nC - low reverse recovery charge minimizes body diode losses during dead-time conduction in synchronous buck stages |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); drain terminals occupy pins 1, 2, 3, and 8 on bottom side; gate and source connect via top-side leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Bottom) | Drain | Exposed copper drain pad - primary thermal path and high-current return; requires full-solder coverage for optimal RthJA |
| 2 (Bottom) | Drain | Secondary drain connection - parallel path to reduce current density and improve thermal distribution across package |
| 3 (Bottom) | Drain | Third drain terminal - enhances current sharing and lowers effective RDS(on) in high-frequency switching |
| 4 (Top) | Gate | Control input - low gate resistance (0.2–1.6 Ω) enables fast, low-loss switching with minimal ringing |
| 5 (Top) | Source | Reference node for gate drive - tied to power ground plane; low-inductance layout essential for EMI control |
| 6 (Top) | Source | Second source terminal - reduces source inductance and improves stability in high-dI/dt synchronous rectifier operation |
| 7 (Top) | Source | Third source connection - further lowers common-source inductance, critical for accurate threshold control and shoot-through immunity |
| 8 (Bottom) | Drain | Fourth drain pad - completes symmetric drain layout; maximizes thermal and electrical symmetry for paralleling |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 2.10 mΩ RDS(on) at 10 V with optimized cell pitch and trench depth for lowest RDS(on) × Qg figure-of-merit |
| 100 % Rg and UIS tested | Guarantees gate oxide integrity and single-pulse avalanche energy rating of 45 mJ - eliminates field failure risk in overload conditions |
| Optimized Qgd/Qgs ratio | 0.024–0.048 range suppresses Miller-induced turn-on, enabling robust operation without external gate clamping in high-dV/dt environments |
| PowerPAK® SO-8 leadless package | Reduces package inductance by >50 % vs. SO-8, lowers RthJA to 20–25 °C/W (t ≤ 10 s), and supports >60 A current with minimal board area |
| Low Qrr and fast trr | 34–70 nC Qrr and 40–80 ns trr minimize body diode conduction loss and voltage overshoot during dead-time transitions |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for automotive and industrial end equipment |
Applications
| Server VRM Output Stage | Synchronous Buck Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency 48 V-to-12 V or 12 V-to-1 V point-of-load conversion in AI accelerator servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 500–1000 kHz with precise gate timing relative to high-side FET. Use Value: 2.10 mΩ RDS(on) at 10 V reduces conduction loss by >35 % vs. legacy 3.5 mΩ devices, directly improving system efficiency and thermal headroom. |
Use Scenario: Compact, high-density DC/DC module for telecom base station power supplies requiring >40 A output. IC Role / Device Role / Timing Role: Primary power switch in interleaved two-phase buck topology, driven by dedicated gate driver ICs. Use Value: 19.7 nC Qg at 4.5 V enables clean 10 ns rise/fall times with 1 Ω gate resistor, reducing switching loss and EMI generation. |
| Embedded DC/DC for Industrial PLC | Load Switching in Automotive ADAS ECU |
|
Use Scenario: 24 V input to 3.3 V/5 V auxiliary rail conversion in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Secondary-side rectifier in active-clamp forward or synchronous flyback converter, operating at 200–300 kHz. Use Value: 2.86 mΩ RDS(on) at 4.5 V ensures full conduction with standard microcontroller GPIO drive, eliminating need for level-shifting circuitry. |
Use Scenario: Hot-swap and inrush current limiting for radar sensor power rails in autonomous driving control units. IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC sequencer, handling 20–30 A steady-state loads with soft-start capability. Use Value: 100 % UIS tested rating supports 30 A single-pulse avalanche events during short-circuit faults, enhancing functional safety compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL640BSPBF | RDS(on) = 3.2 mΩ @ 4.5 V; Qg = 24 nC; TO-263 package; higher RthJC (4.0 °C/W) | Larger footprint and lower current density; less suitable for ultra-thin modules or high-frequency VRMs | Prefer when board-level thermal management favors through-hole heatsinking over PCB copper spread |
| SUD50001-30-E3 | RDS(on) = 2.3 mΩ @ 4.5 V; Qg = 22 nC; PowerPAK 8×8 package; 2× larger area than PowerPAK SO-8 | Higher thermal mass but requires 2.5× more PCB area; better suited for 80–100 A applications with relaxed size constraints | Select when higher pulse current (100 A IDM) and long-term thermal stability outweigh board space limitations |
Compared with IRL640BSPBF and SUD50001-30-E3, the SIRA64DP-T1-GE3 offers superior power density and gate-drive efficiency in space-constrained, high-frequency synchronous rectifier designs - its 6.15 mm × 5.15 mm footprint and 19.7 nC Qg at 4.5 V enable smaller gate drivers and tighter layout without sacrificing 60 A continuous capability.
Availability
SIRA64DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, embedded DC/DC converters, and automotive ADAS load switching requiring stable component supply, full traceability, and long-lifecycle support.
Supply support for SIRA64DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA64DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and load switching in datacenter, telecom, and automotive power systems.
FAQ
What is the maximum continuous drain current rating for SIRA64DP-T1-GE3 at 70 °C case temperature?
The SIRA64DP-T1-GE3 is rated for 60 A continuous drain current at both TC = 25 °C and TC = 70 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RthJC of 3.4 °C/W, allowing sustained high-current operation without derating up to 70 °C case temperature - a key advantage over many competing 30 V MOSFETs that begin derating above 50 °C.
Does SIRA64DP-T1-GE3 support logic-level gate drive, and what is its VGS(th) range?
Yes, the SIRA64DP-T1-GE3 supports logic-level gate drive with a guaranteed VGS(th) range of 1.1 V to 2.2 V at TJ = 25 °C and ID = 250 μA. Its RDS(on) remains low (2.86 mΩ max) at VGS = 4.5 V, making it compatible with standard 3.3 V or 5 V microcontrollers and PWM controllers without requiring gate boosters or level shifters - simplifying drive circuitry in compact DC/DC modules.
Is SIRA64DP-T1-GE3 suitable for synchronous rectification in a 600 kHz buck converter?
Yes, the SIRA64DP-T1-GE3 is explicitly designed for synchronous rectification in high-frequency buck converters. With Qg = 19.7 nC (typ.) at VGS = 4.5 V, Crss/Ciss = 0.024–0.048, and fast switching times (tr = 15–45 ns), it maintains low switching loss and minimal Miller-induced oscillation at 600 kHz - validated in Vishay's typical characteristics and application notes for VRM and embedded DC/DC use cases.
What thermal resistance values apply to SIRA64DP-T1-GE3 in standard PCB mounting?
For SIRA64DP-T1-GE3 mounted on a 1" × 1" FR4 board, the typical junction-to-ambient thermal resistance (RthJA) is 20 °C/W for t ≤ 10 s, with a maximum of 25 °C/W. Its junction-to-case (drain) resistance is 3.4 °C/W typical. These values assume full-solder coverage of the exposed drain pads - incomplete solder fillets do not impair thermal performance due to the direct copper-to-PCB interface defined in the PowerPAK SO-8 specification.
How is avalanche ruggedness verified for SIRA64DP-T1-GE3, and what is its EAS rating?
The SIRA64DP-T1-GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per JEDEC standards. Its single-pulse avalanche energy rating (EAS) is 45 mJ at TA = 25 °C with L = 0.1 mH, and it supports a single-pulse avalanche current (IAS) of 30 A. These ratings are measured and guaranteed - not just design-simulated - ensuring robustness against inductive transients in real-world load-switching and fault-clearing scenarios.
SIRA64DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3420 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA64DP-T1-GE3 FAQ
1.How can I place an order for SIRA64DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA64DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA64DP-T1-GE3 reliable?
The price and inventory of SIRA64DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA64DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA64DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA64DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA64DP-T1-GE3?
SIRA64DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA64DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA64DP-T1-GE3?
For technical support, including SIRA64DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA64DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA64DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA64DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA64DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA64DP-T1-GE3?
All SIRA64DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA64DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA64DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA64DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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