Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA64DP-T1-RE3

Name: SIRA64DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA64DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIRA64DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA64DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 60A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,826

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIRA64DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.10 mΩ at V_GS = 10 V and 2.86 mΩ at V_GS = 4.5 V, with 19.7 nC typical total gate charge and 60 A continuous drain current (T_J = 150 °C). It serves as a high-efficiency synchronous rectifier or load switch in compact DC/DC converters.

For engineers reviewing the SIRA64DP-T1-RE3 datasheet, SIRA64DP-T1-RE3 pinout, SIRA64DP-T1-RE3 application, or SIRA64DP-T1-RE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, optimized Q_gd/Q_gs ratio for reduced switching loss, 100% UIS testing, and PowerPAK SO-8 thermal performance under high-current transient loads.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture to achieve ultra-low on-resistance and tightly controlled gate charge parameters. Its dynamic characteristics-C_iss = 3420 pF, C_oss = 1100 pF, C_rss = 81 pF, and Crss/Ciss = 0.024–0.048-support fast, low-loss switching in high-frequency synchronous buck topologies.

The device features a robust body diode with t_rr = 40–80 ns and Q_rr = 34–70 nC, enabling efficient reverse recovery in hard-switched applications. Thermal design is enabled by R_thJC = 3.4 °C/W (typ.) and R_thJA = 20–25 °C/W (1" × 1" FR4), with junction temperature rated from –55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and VRM secondary-side operation.
R_DS(on) @ 10 V	2.10 mΩ - Enables <1.2 W conduction loss at 60 A, critical for high-power-density DC/DC stages.
R_DS(on) @ 4.5 V	2.86 mΩ - Ensures stable on-state performance with standard 5 V gate drivers or controller outputs.
Q_g typ.	19.7 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in advanced POL converters.
I_D cont. (T_J = 150 °C)	60 A - Continuous current rating validated under case temperature-limited conditions, not ambient-limited.
R_thJC max.	4.5 °C/W - Confirms effective heat transfer from die to PCB copper pad, supporting thermal management in high-current layouts.
V_GS(th)	1.1–2.2 V - Threshold range ensures reliable turn-on with 3.3 V or 5 V logic-level control without unintended conduction.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four drain terminals connected to large exposed copper paddle; primary thermal path to PCB ground plane.
G (Pin 1 side marking)	Gate (G)	Single gate terminal located adjacent to source pins; optimized layout minimizes gate loop inductance.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for minimal conduction + switching loss trade-off.
Optimized Q_gd/Q_gs ratio	Reduces Miller-induced switching delay and dv/dt-induced false turn-on in high-side configurations.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress.
PowerPAK SO-8 thermal design	Exposed drain paddle provides direct thermal path to PCB, achieving 3.4 °C/W junction-to-case resistance.
Low V_GS(th) variation over temperature	ΔV_GS(th)/T_J = –6.2 mV/°C supports stable gate drive margin across –55 °C to +150 °C operating range.

Applications

Synchronous Buck Converter	VRM / Point-of-Load Regulator
Use Scenario: High-efficiency 12 V–1 V conversion in server CPU/GPU VRMs operating at 500 kHz–1 MHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutates during dead-time intervals with precise timing control. Use Value: Achieves <0.5 % efficiency gain over legacy MOSFETs due to 2.86 mΩ R_DS(on) at 4.5 V drive and 19.7 nC Q_g.	Use Scenario: Compact 48 V–3.3 V intermediate bus converter in telecom base station power modules. IC Role / Device Role / Timing Role: Primary high-current switch in interleaved buck stage; handles peak currents up to 100 A pulsed. Use Value: Supports >95 % full-load efficiency via low 2.10 mΩ R_DS(on) and 4.5 °C/W thermal resistance to heatsink.
High-Power Density DC/DC	Synchronous Rectification
Use Scenario: 1 kW, 2U rack-mounted AC/DC front-end with 48 V output bus feeding downstream POL converters. IC Role / Device Role / Timing Role: Load switch controlling hot-swap sequencing and inrush limiting on 48 V distribution rail. Use Value: 60 A continuous rating and 100 A pulsed capability enable single-device rail protection without paralleling.	Use Scenario: Secondary-side rectification in isolated LLC resonant converters for data center PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled gate signals; conducts during positive half-cycle of secondary winding voltage. Use Value: Body diode t_rr = 40 ns and Q_rr = 34 nC minimize reverse recovery loss and EMI during zero-voltage switching transitions.

Synchronous Buck Converter

VRM / Point-of-Load Regulator

Use Scenario: High-efficiency 12 V–1 V conversion in server CPU/GPU VRMs operating at 500 kHz–1 MHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutates during dead-time intervals with precise timing control.

Use Value: Achieves <0.5 % efficiency gain over legacy MOSFETs due to 2.86 mΩ R_DS(on) at 4.5 V drive and 19.7 nC Q_g.

Use Scenario: Compact 48 V–3.3 V intermediate bus converter in telecom base station power modules.

IC Role / Device Role / Timing Role: Primary high-current switch in interleaved buck stage; handles peak currents up to 100 A pulsed.

Use Value: Supports >95 % full-load efficiency via low 2.10 mΩ R_DS(on) and 4.5 °C/W thermal resistance to heatsink.

High-Power Density DC/DC

Synchronous Rectification

Use Scenario: 1 kW, 2U rack-mounted AC/DC front-end with 48 V output bus feeding downstream POL converters.

IC Role / Device Role / Timing Role: Load switch controlling hot-swap sequencing and inrush limiting on 48 V distribution rail.

Use Value: 60 A continuous rating and 100 A pulsed capability enable single-device rail protection without paralleling.

Use Scenario: Secondary-side rectification in isolated LLC resonant converters for data center PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled gate signals; conducts during positive half-cycle of secondary winding voltage.

Use Value: Body diode t_rr = 40 ns and Q_rr = 34 nC minimize reverse recovery loss and EMI during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 2.35 mΩ @ 10 V; Q_g = 17.5 nC; same PowerPAK SO-8 package.	Slightly higher conduction loss but lower gate charge improves light-load efficiency in variable-frequency controllers.	Select when optimizing for gate drive power savings over absolute minimum R_DS(on).
IRL6217PBF	R_DS(on) = 3.2 mΩ @ 4.5 V; TO-220 package; no UIS testing; R_thJA ≈ 62 °C/W.	Larger footprint and inferior thermal performance limit use to low-frequency, low-power (<15 A) applications.	Consider only for cost-sensitive, non-high-density designs where layout space and thermal headroom are abundant.

Compared with SiR626DP-T1-RE3, SIRA64DP-T1-RE3 offers lower R_DS(on) for improved full-load efficiency, while IRL6217PBF trades performance for legacy through-hole compatibility and lower unit cost-neither is pin-compatible, requiring layout revision.

Availability

SIRA64DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, VRMs, high-power-density DC/DC modules, and load-switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIRA64DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The PowerPAK SO-8 MOSFET product line targets high-current, high-frequency power conversion systems-including server VRMs, telecom DC/DC, and industrial motor drives-where low R_DS(on), fast switching, and superior thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIRA64DP-T1-RE3 at 70 °C case temperature?

The SIRA64DP-T1-RE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and assumes adequate PCB copper area for heat dissipation. The SIRA64DP-T1-RE3 maintains this current level without derating between 25 °C and 70 °C case temperature.

Does SIRA64DP-T1-RE3 require a gate resistor for stable operation in a 1 MHz synchronous buck converter?

The SIRA64DP-T1-RE3 has a typical gate resistance (R_g) of 0.8 Ω and low Q_gd/Q_gs ratio, making it inherently resistant to oscillation. However, a small gate resistor (1–3 Ω) is recommended to dampen ringing and control dV/dt during turn-on/off transients in 1 MHz operation. This ensures clean switching edges and prevents false triggering in high-noise environments where the SIRA64DP-T1-RE3 is deployed.

Can SIRA64DP-T1-RE3 be used as a high-side switch with 5 V gate drive?

Yes, the SIRA64DP-T1-RE3 is fully compatible with 5 V gate drive: its V_GS(th) range (1.1–2.2 V) guarantees turn-on, and R_DS(on) = 2.86 mΩ at V_GS = 4.5 V ensures low conduction loss. For high-side use, ensure gate drive voltage exceeds source potential by ≥4.5 V and consider bootstrap or isolated gate driver circuitry. The SIRA64DP-T1-RE3's 100% UIS testing further validates robustness in inductive high-side switching.

What is the thermal resistance from junction to ambient for SIRA64DP-T1-RE3 on a standard 1" × 1" FR4 board?

Per the datasheet, the SIRA64DP-T1-RE3 exhibits R_thJA = 25 °C/W maximum (20 °C/W typical) when mounted on a 1" × 1" FR4 board with 2 oz copper. This value assumes standard solder paste reflow and no additional heatsinking. For higher power densities, thermal performance improves significantly when using internal copper planes or external heatsinks, as the SIRA64DP-T1-RE3's R_thJC = 3.4 °C/W enables efficient heat extraction via the exposed drain paddle.

Is SIRA64DP-T1-RE3 suitable for synchronous rectification in an LLC resonant converter?

Yes, the SIRA64DP-T1-RE3 is well-suited for LLC synchronous rectification due to its fast body diode (t_rr = 40–80 ns, Q_rr = 34–70 nC) and low R_DS(on) at low V_GS. Its optimized Q_gd/Q_gs ratio suppresses Miller-induced turn-on during high dv/dt transitions common in resonant topologies. When used as a synchronous rectifier, the SIRA64DP-T1-RE3 delivers measurable efficiency gains over Schottky diodes in 48 V–12 V isolated DC/DC stages.

SIRA64DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 27.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA64DP-T1-RE3 FAQ

1.How can I place an order for SIRA64DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA64DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA64DP-T1-RE3 reliable?

The price and inventory of SIRA64DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA64DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA64DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA64DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA64DP-T1-RE3?

SIRA64DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA64DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA64DP-T1-RE3?

For technical support, including SIRA64DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA64DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA64DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA64DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA64DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA64DP-T1-RE3?

All SIRA64DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA64DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA64DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA64DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …