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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA66DP-T1-GE3

Name: SIRA66DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA66DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA66DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA66DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK SO-8

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Product details

Overview

SIRA66DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.3 mΩ at V_GS = 10 V and 3.1 mΩ at V_GS = 4.5 V, rated for 50 A continuous drain current at T_C = 25 °C, and optimized for synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SIRA66DP-T1-GE3 datasheet, SIRA66DP-T1-GE3 pinout, SIRA66DP-T1-GE3 application, or SIRA66DP-T1-GE3 equivalent, key selection criteria include its low gate charge (19.2 nC at 4.5 V), robust 100 % R_g and UIS testing, thermal performance matching DPAK (R_thJC = 1.6 °C/W), and compatibility with standard SO-8 PCB footprints while enabling higher power density.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 19.2 nC at V_GS = 4.5 V, Q_gd = 2.9 nC) supports efficient operation in high-frequency synchronous buck topologies, and its body diode exhibits t_rr = 38–75 ns and Q_rr = 32–64 nC for reduced switching loss during reverse recovery.

The PowerPAK® SO-8 package features an exposed copper drain pad on the bottom surface, providing a direct thermal path to the PCB. With R_thJC = 1.6 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s), it delivers DPAK-level thermal performance in an SO-8 footprint-enabling drop-in replacement in existing layouts without board redesign.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) @ 10 V	2.3 mΩ max - Enables <1.2 W conduction loss at 50 A, critical for VRM efficiency
R_DS(on) @ 4.5 V	3.1 mΩ max - Ensures stable on-state performance with 5 V gate drive in low-voltage control ICs
Q_g @ 4.5 V	19.2 nC typ. - Reduces gate driver power demand and enables >1 MHz switching in compact converters
I_D (continuous)	50 A @ T_C = 25 °C - Supports high-current output rails in server and telecom power supplies
R_thJC	1.6 °C/W typ. - Matches DPAK thermal capability, allowing direct heatsink mounting via PCB copper
t_rr	38–75 ns - Minimizes reverse recovery energy loss in synchronous rectifier mode

Pinout & Package

Package: PowerPAK® SO-8 - leadless, surface-mount package with exposed drain pad on bottom; 6.15 mm × 5.15 mm footprint; identical pinout and land pattern to standard SO-8, enabling mechanical and layout compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V drive; low input capacitance (C_iss = 3014 pF) reduces driver loading
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in most buck applications
3 (S)	Source	Parallel source connection; lowers package inductance and improves current sharing in high-di/dt paths
4 (S)	Source	Third source terminal; enhances thermal and electrical connection to PCB ground plane
5 (D)	Drain	Main power output node; connected to exposed copper pad on bottom for low-impedance thermal path
6 (D)	Drain	Second drain terminal; increases current-carrying capacity and reduces package resistance
7 (D)	Drain	Third drain terminal; supports high pulsed currents (I_DM = 150 A) in transient load conditions
8 (D)	Drain	Fourth drain terminal; maximizes copper area for thermal dissipation and minimizes R_DS(on) temperature rise

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 2.3 mΩ R_DS(on) at 10 V in SO-8 footprint-enabling higher current density than prior-generation MOSFETs
100 % R_g and UIS tested	Ensures gate robustness against overvoltage transients and avalanche energy handling (E_AS = 20 mJ)
PowerPAK® SO-8 package	Provides DPAK-equivalent R_thJC (1.6 °C/W) in SO-8 outline-eliminates need for layout changes when upgrading from standard SO-8
Lead (Pb)-free and Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing
Low Q_gd/Q_g ratio	0.15 (2.9/19.2) - Improves hard-switching immunity and reduces Miller-induced turn-on risk in synchronous rectifiers

Applications

Server VRMs	Telecom DC/DC Modules
Use Scenario: High-current, multi-phase buck converters supplying core voltage to CPUs and FPGAs in data center servers. IC Role / Device Role: Low-side synchronous rectifier in 30 V input, 0.8–1.8 V output stages operating at 300–1000 kHz. Use Value: 2.3 mΩ R_DS(on) and 19.2 nC Q_g reduce conduction and switching losses, enabling >95 % efficiency at 50 A per phase.	Use Scenario: Intermediate bus converters (e.g., 48 V to 12 V) in 5G base station power systems with strict thermal constraints. IC Role / Device Role: Primary-side high-side switch in isolated forward or active-clamp forward topologies. Use Value: 30 V rating and 150 A pulsed current capability support high-power transient response; R_thJC = 1.6 °C/W allows direct thermal coupling to cold plates.
GPU Power Delivery	Industrial PLC Power Supplies
Use Scenario: Point-of-load (POL) regulators delivering up to 400 A to AI accelerator GPUs using multiphase interleaved architecture. IC Role / Device Role: Synchronous rectifier in each phase leg, driven by dedicated gate controllers with 4.5 V logic-level output. Use Value: 3.1 mΩ R_DS(on) at 4.5 V ensures minimal voltage drop and thermal rise under heavy load, maintaining tight output regulation.	Use Scenario: 24 V input, 5/3.3 V dual-output power supplies for programmable logic controllers with extended ambient temperature range (−40 to +85 °C). IC Role / Device Role: Secondary-side synchronous rectifier in flyback or forward converters. Use Value: −55 to +150 °C operating junction range and 100 % UIS testing ensure reliability in harsh industrial environments with frequent load surges.

Server VRMs

Telecom DC/DC Modules

Use Scenario: High-current, multi-phase buck converters supplying core voltage to CPUs and FPGAs in data center servers.

IC Role / Device Role: Low-side synchronous rectifier in 30 V input, 0.8–1.8 V output stages operating at 300–1000 kHz.

Use Value: 2.3 mΩ R_DS(on) and 19.2 nC Q_g reduce conduction and switching losses, enabling >95 % efficiency at 50 A per phase.

Use Scenario: Intermediate bus converters (e.g., 48 V to 12 V) in 5G base station power systems with strict thermal constraints.

IC Role / Device Role: Primary-side high-side switch in isolated forward or active-clamp forward topologies.

Use Value: 30 V rating and 150 A pulsed current capability support high-power transient response; R_thJC = 1.6 °C/W allows direct thermal coupling to cold plates.

GPU Power Delivery

Industrial PLC Power Supplies

Use Scenario: Point-of-load (POL) regulators delivering up to 400 A to AI accelerator GPUs using multiphase interleaved architecture.

IC Role / Device Role: Synchronous rectifier in each phase leg, driven by dedicated gate controllers with 4.5 V logic-level output.

Use Value: 3.1 mΩ R_DS(on) at 4.5 V ensures minimal voltage drop and thermal rise under heavy load, maintaining tight output regulation.

Use Scenario: 24 V input, 5/3.3 V dual-output power supplies for programmable logic controllers with extended ambient temperature range (−40 to +85 °C).

IC Role / Device Role: Secondary-side synchronous rectifier in flyback or forward converters.

Use Value: −55 to +150 °C operating junction range and 100 % UIS testing ensure reliability in harsh industrial environments with frequent load surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V (higher), Q_g = 21.5 nC @ 4.5 V (higher), same PowerPAK SO-8 package	Slightly lower efficiency in high-current, high-frequency VRMs due to increased conduction and gate drive loss	Select when marginally higher R_DS(on) is acceptable for cost-sensitive designs where thermal headroom exists
IRLHS6242TRPBF	R_DS(on) = 2.4 mΩ @ 4.5 V (lower), Q_g = 22.5 nC @ 4.5 V (higher), PQFN 5×6 mm package with different pinout	Requires PCB redesign; better 4.5 V drive performance but higher gate charge penalizes switching efficiency	Choose only if gate drive is strictly 4.5 V and layout flexibility permits new footprint adoption

Compared with SiR626DP-T1-GE3 and IRLHS6242TRPBF, SIRA66DP-T1-GE3 offers the lowest combined R_DS(on)/Q_g figure of merit (2.3 mΩ × 19.2 nC = 44.2 mΩ·nC) in a drop-in SO-8-compatible package-making it optimal for space-constrained, high-efficiency synchronous rectification where layout reuse is mandatory.

Availability

SIRA66DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and GPU power delivery systems requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIRA66DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

SIRA66DP-T1-GE3 belongs to the TrenchFET® Gen IV Power MOSFET product line, engineered specifically for high-current, high-frequency synchronous rectification in advanced computing and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIRA66DP-T1-GE3 at 70 °C case temperature?

The SIRA66DP-T1-GE3 is rated for 50 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited current handling under steady-state thermal conditions and assumes adequate PCB copper area for heat spreading. Derating is not required between 25 °C and 70 °C case temperature per the datasheet's current derating curve.

Does SIRA66DP-T1-GE3 support 4.5 V gate drive in synchronous buck applications?

Yes, SIRA66DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 3.1 mΩ (max) at V_GS = 4.5 V and I_D = 10 A. Its low threshold voltage (V_GS(th) = 1.0–2.2 V) and robust gate oxide ensure reliable turn-on with standard 5 V logic-level controllers, making it suitable for 4.5 V-driven synchronous rectifiers.

What is the thermal resistance from junction to case (R_thJC) for SIRA66DP-T1-GE3?

The SIRA66DP-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.6 °C/W, with a maximum of 2.0 °C/W, measured from junction to the drain pad. This value is confirmed in the Thermal Resistance Ratings table and aligns with DPAK-level performance-enabling effective thermal management via PCB copper or external heatsinks attached to the exposed drain pad.

Is SIRA66DP-T1-GE3 compatible with standard SO-8 PCB footprints?

Yes, SIRA66DP-T1-GE3 in the PowerPAK® SO-8 package uses the identical 6.15 mm × 5.15 mm outline and pin configuration as standard SO-8, including pin 1–8 numbering and spacing. It is designed for direct substitution without PCB layout changes, though optimal thermal performance requires adherence to Vishay's recommended drain pad land pattern per Application Note AN826.

What avalanche energy rating does SIRA66DP-T1-GE3 have, and is it production-tested?

SIRA66DP-T1-GE3 is rated for 20 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, and it undergoes 100 % Unclamped Inductive Switching (UIS) testing during production. This ensures robustness against inductive switching transients in hard-switched topologies such as non-isolated buck converters with mismatched gate timing.

SIRA66DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA66DP-T1-GE3 FAQ

1.How can I place an order for SIRA66DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA66DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA66DP-T1-GE3 reliable?

The price and inventory of SIRA66DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA66DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA66DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA66DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA66DP-T1-GE3?

SIRA66DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA66DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA66DP-T1-GE3?

For technical support, including SIRA66DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA66DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA66DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA66DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA66DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA66DP-T1-GE3?

All SIRA66DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA66DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA66DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA66DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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