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Vishay Siliconix SIRA72DP-T1-GE3
- Part No.:
- SIRA72DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA72DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SIRA72DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V, 60 A TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, featuring RDS(on) = 3.5 mΩ @ VGS = 10 V, Qg = 19.5 nC @ 4.5 V, and optimized Qgd/Qgs ratio < 1 - deployed in high-efficiency synchronous rectification and battery load switching circuits.
For engineers reviewing the SIRA72DP-T1-GE3 datasheet, SIRA72DP-T1-GE3 pinout, SIRA72DP-T1-GE3 application, or SIRA72DP-T1-GE3 equivalent, key selection criteria include low RDS(on)-Qoss figure of merit, 100% UIS testing, thermal performance matching DPAK (RthJC = 1.8 °C/W), and compatibility with standard SO-8 PCB footprints.
Technical Context
This MOSFET uses TrenchFET® Gen IV silicon architecture tuned for minimal RDS(on)-Qoss FOM, enabling high-frequency DC/DC conversion with reduced switching losses. Its gate charge profile (Qgd = 4.2 nC, Qgs = 8.7 nC) yields a Qgd/Qgs ratio < 1, improving voltage-controlled turn-off behavior and reducing Miller-induced shoot-through risk.
The PowerPAK® SO-8 package features exposed drain paddle on bottom side for direct thermal conduction, achieving RthJC = 1.8 °C/W (max) and RthJA = 22 °C/W (typ) on 1" × 1" FR4 - matching DPAK thermal capability while retaining SO-8 footprint and pinout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum blocking voltage for 12–24 V input systems including automotive and industrial DC/DC stages |
| RDS(on) max @ 10 V | 3.5 mΩ - enables ≤ 2.1 W conduction loss at 60 A, critical for high-current synchronous rectifiers |
| RDS(on) max @ 4.5 V | 4.8 mΩ - supports logic-level gate drive in battery-powered load switches without level-shifting |
| Qg typ @ 4.5 V | 19.5 nC - determines gate driver current requirement and switching transition time in hard-switched topologies |
| ID continuous @ TC = 25 °C | 60 A - rated drain current under heatsink-cooled conditions, validated per JEDEC JESD24-1 |
| Qgd/Qgs ratio | < 1 - reduces voltage-dependent Miller plateau duration, improving controllability during dV/dt transients |
| RthJC max | 2.2 °C/W - defines minimum thermal resistance from junction to case, enabling accurate heatsink sizing |
Pinout & Package
PowerPAK® SO-8 single-channel package: 5.15 mm × 6.15 mm footprint, 1.04 mm height, leadless construction with exposed copper drain paddle on bottom side. Compatible with standard SO-8 land patterns; no PCB redesign required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain connection integrates into large copper pour for low-inductance, high-current return path |
| G (Pin 1 of top-side marking) | Gate (G) | Single gate terminal located adjacent to source pins to minimize gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers lowest RDS(on)-Qoss FOM among 40 V SO-8 MOSFETs, reducing total switching loss in 300–1000 kHz converters |
| 100% Rg and UIS tested | Ensures gate resistance consistency (0.5–2.5 Ω) and ruggedness against unclamped inductive switching events up to 20 mJ |
| Qgd/Qgs < 1 | Minimizes Miller plateau duration, allowing faster, more predictable turn-off and improved cross-conduction immunity |
| PowerPAK® SO-8 thermal design | Exposes drain paddle directly to PCB copper, achieving RthJC = 1.8 °C/W - equivalent to DPAK, not SO-8 |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 |
Applications
| Synchronous Rectification | High Power Density DC/DC |
|---|---|
Use Scenario: Secondary-side switch in isolated 12 V → 1.2 V VRM for server CPUs, operating at 500 kHz with 60 A peak current. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 3.5 mΩ RDS(on) cuts I²R loss by >70% vs. 40 V Schottky, enabling >95% efficiency at full load. |
Use Scenario: Primary-side high-side switch in 48 V → 12 V telecom DC/DC module with 30 A output. IC Role / Device Role: High-current, high-frequency power switch in half-bridge topology with active gate control. Use Value: 19.5 nC Qg at 4.5 V enables fast switching with low gate driver power, supporting >1 MHz operation. |
| DC/AC Inverters | Battery and Load Switch |
Use Scenario: H-bridge leg in 24 V portable UPS inverter driving resistive-inductive loads up to 15 A RMS. IC Role / Device Role: Bidirectional power switch handling both motoring and regenerative braking currents. Use Value: 20 A single-pulse avalanche rating (IAS = 20 A) provides margin against inductive kickback during fault conditions. |
Use Scenario: Main battery disconnect switch in 24 V industrial handheld tool with 50 A peak motor surge. IC Role / Device Role: Logic-level controlled load switch enabling soft-start and reverse-polarity protection. Use Value: 4.8 mΩ RDS(on) at 4.5 V ensures < 120 mV drop at 25 A, eliminating need for external level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 10 V; Qg = 22.5 nC @ 4.5 V; same PowerPAK SO-8 package | Lower RDS(on) improves conduction loss but increases gate drive demand | Preferred where board space allows higher gate drive capability and lower steady-state loss is prioritized |
| IRL6217PBF | RDS(on) = 5.2 mΩ @ 4.5 V; TO-220AB package; RthJC = 1.5 °C/W; no Qgd/Qgs optimization | Larger footprint, higher thermal resistance, and slower switching due to higher Qg and unoptimized charge ratio | Only suitable when legacy TO-220 layout exists and switching frequency ≤ 100 kHz |
Compared with SiR626DP-T1-GE3, SIRA72DP-T1-GE3 trades 0.5 mΩ higher RDS(on) for 3 nC lower Qg, favoring high-frequency efficiency; versus IRL6217PBF, it delivers 30% lower RDS(on), 40% lower RthJA, and superior switching control - making it optimal for compact, high-efficiency 200–1000 kHz designs.
Availability
SIRA72DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-power-density DC/DC conversion, and battery load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIRA72DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
SIRA72DP-T1-GE3 belongs to the TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion where low RDS(on)-Qoss FOM and robust UIS performance are critical.
FAQ
What is the maximum continuous drain current rating for SIRA72DP-T1-GE3 at 70 °C case temperature?
The SIRA72DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per Vishay Application Note AN821, and is validated under steady-state conditions with junction temperature limited to 150 °C. The SIRA72DP-T1-GE3 maintains this current capability due to its low RthJC of 1.8 °C/W.
Does SIRA72DP-T1-GE3 support logic-level gate drive?
Yes, the SIRA72DP-T1-GE3 is fully characterized down to VGS = 4.5 V, with RDS(on) = 4.8 mΩ max at that voltage. Its gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.4 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic outputs. The SIRA72DP-T1-GE3 also features a Qgd/Qgs ratio < 1, enhancing controllability under logic-level drive conditions.
What is the avalanche energy rating for SIRA72DP-T1-GE3?
The SIRA72DP-T1-GE3 is rated for 20 mJ single-pulse avalanche energy (EAS) and 20 A single-pulse avalanche current (IAS) with L = 0.1 mH, per the Absolute Maximum Ratings table. All units undergo 100% unclamped inductive switching (UIS) testing, confirming ruggedness in inductive load switching applications such as motor drives and DC/AC inverters. This rating applies to the SIRA72DP-T1-GE3 device itself, independent of PCB layout.
Can SIRA72DP-T1-GE3 be mounted on a standard SO-8 footprint?
Yes, the SIRA72DP-T1-GE3 in PowerPAK® SO-8 package uses the identical 5.15 mm × 6.15 mm outline and pin configuration as standard SO-8, enabling drop-in replacement without PCB modification. However, its exposed drain paddle requires full-solder coverage on the bottom-side copper pour for optimal thermal performance. Vishay recommends the land pattern in Application Note AN826 (doc#72599) to achieve RthJA = 22 °C/W. The SIRA72DP-T1-GE3 achieves DPAK-equivalent thermal resistance despite the SO-8 footprint.
What is the body diode forward voltage of SIRA72DP-T1-GE3 at 5 A?
The body diode forward voltage (VSD) of the SIRA72DP-T1-GE3 is specified as 0.74 V typical and 1.1 V maximum at IS = 5 A and TJ = 25 °C. This low VSD minimizes conduction loss during freewheeling intervals in synchronous rectification and H-bridge configurations. The SIRA72DP-T1-GE3 also exhibits trr = 31 ns typical and Qrr = 23 nC typical, supporting high-frequency operation with low reverse recovery loss.
SIRA72DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3240 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA72DP-T1-GE3 FAQ
1.How can I place an order for SIRA72DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA72DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA72DP-T1-GE3 reliable?
The price and inventory of SIRA72DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA72DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA72DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA72DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA72DP-T1-GE3?
SIRA72DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA72DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA72DP-T1-GE3?
For technical support, including SIRA72DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA72DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA72DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA72DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA72DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA72DP-T1-GE3?
All SIRA72DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA72DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA72DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA72DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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