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Vishay Siliconix SIRA88BDP-T1-GE3
- Part No.:
- SIRA88BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA88BDP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 19A/40A PPAK SO8
- Quantity:
- Payment:
- Shipping:
Inventory:5,490
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Product details
Overview
SIRA88BDP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 6.83 mΩ at VGS = 10 V and 10.5 mΩ at VGS = 4.5 V, with 40 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRA88BDP-T1-GE3 datasheet, SIRA88BDP-T1-GE3 pinout, SIRA88BDP-T1-GE3 application, or SIRA88BDP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, thermal resistance RthJC = 5.5 °C/W, and compatibility with high-density power stages requiring <10 ns turn-off delay.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 5 mJ) and fast switching (td(off) = 15–30 ns at VGEN = 10 V). Its gate charge profile (Qg = 6.2 nC typ. at 4.5 V) supports efficient operation in high-frequency synchronous buck topologies.
The device features a single N-channel configuration with integrated body diode (VSD = 0.8–1.1 V at IS = 5 A), specified for junction temperatures from –55 °C to +150 °C, and qualified per JEDEC JESD47 for repetitive avalanche stress and 100 % Rg testing - critical for automotive and industrial load-switch reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V input DC/DC stages. |
| RDS(on) @ 10 V | 6.83 mΩ max - Enables ≤1.4 W conduction loss at 40 A, supporting high-current output rails. |
| RDS(on) @ 4.5 V | 10.5 mΩ max - Ensures stable on-state performance with standard 5 V logic-level gate drivers. |
| Qg | 6.2 nC typ. @ 4.5 V - Low gate charge reduces driver power loss and enables >1 MHz switching in compact converters. |
| ID (cont.) | 40 A @ TC = 25 °C - Supports high-power density designs without forced air cooling when mounted on 1" × 1" FR4. |
| RthJC | 5.5 °C/W typical - Enables direct thermal path to heatsink or PCB copper, critical for thermal management in sealed enclosures. |
| EAS | 5 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients in motor drives and SMPS. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, surface-mount); dimensions 5.15 mm × 6.15 mm × 0.90 mm (A = 0.90 mm nominal height); exposed drain paddle on bottom side for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input; low Rg (0.3–3 Ω) minimizes gate ringing and simplifies driver design. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper paddle - primary thermal and current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25 % lower RDS(on) vs. prior generation at same die size, enabling smaller footprint for identical power handling. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in hard-switched loads. |
| PowerPAK® SO-8 package | 0.9 mm profile and exposed drain paddle achieve 5.5 °C/W RthJC, outperforming standard SO-8 by >40 % in thermal resistance. |
| Low Qgd/Qg ratio | Qgd = 2.3 nC / Qg = 6.2 nC → ~37 % - improves Miller immunity and enables stable operation with high-side gate drivers. |
| Body diode trr | 15–30 ns - Fast reverse recovery minimizes shoot-through risk and conduction loss in synchronous rectifier mode. |
Applications
| Server VRM Output Stage | Industrial 48 V-to-12 V DC/DC |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter supplying CPU core voltage in data center servers. IC Role / Device Role: Synchronous rectifier (low-side switch) in multiphase VRM, operating at 500 kHz–1 MHz. Use Value: 10.5 mΩ RDS(on) at 4.5 V enables full compatibility with 5 V PWM controllers while reducing conduction loss by 32 % vs. legacy 15 mΩ devices. |
Use Scenario: Isolated or non-isolated step-down converter powering PLC I/O modules in factory automation. IC Role / Device Role: Primary power switch in high-side or low-side configuration of 48 V input industrial PSU. Use Value: 40 A continuous rating and 150 °C TJ rating support derated operation under 70 °C ambient with no airflow - eliminating need for active cooling. |
| Telecom Base Station PSU | Automotive ADAS Power Supply |
|
Use Scenario: Intermediate bus converter (48 V to 12 V) in 5G radio unit power architecture. IC Role / Device Role: High-frequency switching element in interleaved LLC or synchronous buck stage. Use Value: 6.2 nC Qg at 4.5 V allows efficient gate driving with low-power controllers, reducing auxiliary supply burden and improving system efficiency at light load. |
Use Scenario: Load switch controlling power to radar sensor or camera ECU in ADAS domain controller. IC Role / Device Role: Protected high-side load switch with integrated body diode for reverse polarity protection. Use Value: 100 % UIS tested and –55 °C to +150 °C rating ensure reliable cold-cranking and hot-soak operation per AEC-Q101 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8726PBF | RDS(on) = 7.0 mΩ @ 10 V; Qg = 12 nC @ 10 V; TO-220 package; RthJC = 1.5 °C/W but larger footprint. | Requires heatsink mounting and through-hole PCB layout; unsuitable for ultra-thin or high-density layouts. | Select when higher thermal margin is needed and board space is unconstrained; not drop-in due to package and pinout mismatch. |
| SIR872DP-T1-GE3 | RDS(on) = 11.5 mΩ @ 4.5 V; same PowerPAK SO-8 package; 30 V rating; lower cost but higher conduction loss. | Acceptable for <20 A applications where efficiency is secondary to BOM cost. | Choose for cost-sensitive industrial supplies where peak current ≤18 A and thermal budget allows 15 % higher RDS(on). |
Compared with IRL8726PBF, SIRA88BDP-T1-GE3 offers 40 % smaller footprint and 2× lower gate charge for high-frequency designs; versus SIR872DP-T1-GE3, it delivers 9 % lower RDS(on) at 4.5 V - directly improving efficiency in 12 V output rails above 15 A.
Availability
SIRA88BDP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, and automotive ADAS power supplies requiring stable component supply, lead-free compliance, and long-term production continuity.
Supply support for SIRA88BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and automotive markets.
The PowerPAK® SO-8 MOSFET product line targets high-power-density applications demanding low RDS(on), fast switching, and superior thermal performance in surface-mount packages - specifically engineered for next-generation DC/DC conversion and load switching.
FAQ
What is the maximum continuous drain current for SIRA88BDP-T1-GE3 at 70 °C case temperature?
The SIRA88BDP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package and must be validated against actual PCB copper area and airflow conditions in the end application. The SIRA88BDP-T1-GE3 datasheet confirms this value under steady-state conditions with proper thermal management.
Does SIRA88BDP-T1-GE3 have a fully characterized body diode for synchronous rectification?
Yes, the SIRA88BDP-T1-GE3 includes a fully characterized body diode with VSD = 0.8–1.1 V at IS = 5 A and reverse recovery time trr = 15–30 ns at TJ = 25 °C. These parameters are measured and guaranteed per the datasheet's Drain-Source Body Diode Characteristics section, making the SIRA88BDP-T1-GE3 suitable for synchronous rectifier use without external Schottky diodes.
Is SIRA88BDP-T1-GE3 compliant with lead-free and halogen-free standards?
Yes, the SIRA88BDP-T1-GE3 is explicitly marked "Lead (Pb)-free and halogen-free" in the Ordering Information section of its datasheet (Document Number: 77158). It meets JEDEC JS709B and IPC-1752A material declarations, and the "-GE3" suffix denotes Vishay's green, RoHS-compliant packaging standard.
What is the gate threshold voltage range for SIRA88BDP-T1-GE3?
The gate-source threshold voltage VGS(th) for SIRA88BDP-T1-GE3 is specified as 1.2 V minimum to 2.4 V maximum at ID = 250 μA and TJ = 25 °C. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining noise immunity - a key parameter confirmed in the Static Specifications table of the SIRA88BDP-T1-GE3 datasheet.
Can SIRA88BDP-T1-GE3 be used in avalanche-rated circuits?
Yes, the SIRA88BDP-T1-GE3 is rated for single-pulse avalanche energy EAS = 5 mJ and single-pulse avalanche current IAS = 10 A (L = 0.1 mH), with 100 % UIS testing performed during production. These ratings are documented in the Absolute Maximum Ratings table and support use in circuits subject to inductive switching transients - a verified capability of the SIRA88BDP-T1-GE3 per Vishay's test methodology.
SIRA88BDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.83mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 17W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA88BDP-T1-GE3 FAQ
1.How can I place an order for SIRA88BDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA88BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA88BDP-T1-GE3 reliable?
The price and inventory of SIRA88BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA88BDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA88BDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA88BDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA88BDP-T1-GE3?
SIRA88BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA88BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA88BDP-T1-GE3?
For technical support, including SIRA88BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA88BDP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA88BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA88BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA88BDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA88BDP-T1-GE3?
All SIRA88BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA88BDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA88BDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA88BDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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