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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA90ADP-T1-GE3

Name: SIRA90ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA90ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA90ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA90ADP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 71A/334A PPAK

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Product details

Overview

SIRA90ADP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.78 mΩ at V_GS = 10 V and 1.07 mΩ at V_GS = 4.5 V, with 60.5 nC typical total gate charge and 334 A continuous drain current at T_C = 25 °C - optimized for high-efficiency battery management and hot-swap switching.

For engineers reviewing the SIRA90ADP-T1-GE3 datasheet, SIRA90ADP-T1-GE3 pinout, SIRA90ADP-T1-GE3 application, or SIRA90ADP-T1-GE3 equivalent, key selection criteria include low R_DS(on) × Q_g figure-of-merit, 100 % R_g and UIS testing, and leadless PowerPAK SO-8 thermal performance with R_thJC = 0.9 °C/W.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low conduction loss and fast switching dynamics. Its gate charge profile (Q_g = 60.5 nC at V_GS = 4.5 V) and low Crss (302 pF) support efficient operation in synchronous rectification and high-frequency DC/DC converters.

The device integrates a robust body diode with t_rr = 60 ns and Q_rr = 99 nC, enabling reliable reverse recovery in bidirectional power paths. Thermal design is enabled by a 0.9 °C/W junction-to-case resistance and validated soldering compatibility with IPC-J-STD-020-compliant reflow profiles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal bus systems with 20 % margin for transients
R_DS(on) @ 10 V	0.78 mΩ - enables <1 W conduction loss at 30 A in high-current battery paths
R_DS(on) @ 4.5 V	1.07 mΩ - ensures stable on-state performance with 3.3 V or 5 V gate drivers
Q_g typ.	60.5 nC - balances switching speed and driver power requirements in 100–500 kHz converters
I_D cont. @ T_C = 25 °C	334 A - supports single-device implementation in high-power OR-ing and hot-swap circuits
R_thJC max.	1.2 °C/W - allows direct heatsink mounting for >100 W power dissipation without derating
V_GS(th)	1.0–2.2 V - provides clean turn-on with standard logic-level gate drive

Pinout & Package

PowerPAK® SO-8 (leadless) package: 6.15 mm × 5.15 mm footprint with exposed copper drain paddle on bottom side; compatible with standard SO-8 PCB layouts but requires controlled reflow per IPC-J-STD-020 due to leadless construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5	Gate (G)	Single gate input with R_g = 0.1–1.2 Ω - supports direct connection to gate drivers without external series resistance
6, 7, 8	Drain (D)	Three drain terminals connected to exposed copper paddle - primary thermal and current path to PCB heatsink

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g FOM for reduced conduction + switching losses in compact form factor
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching behavior
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events in motor control and hot-swap fault conditions
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow compliance for industrial and automotive use
Exposed drain paddle	Enables <1.2 °C/W thermal resistance to heatsink - critical for maintaining T_J < 150 °C under full load

Applications

Battery Management System (BMS)	Hot-Swap Controller
Use Scenario: Bidirectional current monitoring and cell balancing in 24 V lithium-ion battery packs with up to 300 A peak discharge. IC Role / Device Role / Timing Role: Primary high-side switch for pack isolation and fault protection during insertion/removal or overcurrent events. Use Value: Ultra-low R_DS(on) minimizes voltage drop across sense resistors and preserves state-of-charge accuracy while supporting fast fault response via low Q_g.	Use Scenario: Inrush current limiting and live-insertion protection for redundant 24 V server backplanes and telecom line cards. IC Role / Device Role / Timing Role: Main OR-ing FET in active hot-swap circuit, controlled by dedicated hot-swap controller ICs like LTC4215 or TPS2375. Use Value: Low V_GS(th) and high I_D rating allow rapid turn-on with minimal gate drive overhead, reducing insertion delay and improving system availability.
High-Current DC/DC Converter	Industrial Motor Drive Half-Bridge
Use Scenario: Synchronous rectifier in 24 V input, 12 V/100 A output isolated forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 250 kHz with gate driven by transformer-coupled or integrated driver. Use Value: 60.5 nC Q_g and 302 pF Crss enable efficient zero-voltage switching (ZVS) transition, reducing EMI and improving efficiency above 95 %.	Use Scenario: High-side switch in 24 V brushed DC motor H-bridge driving 50 A stall current in factory automation actuators. IC Role / Device Role / Timing Role: Upper-leg power switch paired with complementary low-side MOSFET, driven by bootstrap gate driver. Use Value: Robust body diode (V_SD = 0.7–1.1 V, t_rr = 60 ns) sustains freewheeling current during dead-time without external Schottky clamp.

Battery Management System (BMS)

Hot-Swap Controller

Use Scenario: Bidirectional current monitoring and cell balancing in 24 V lithium-ion battery packs with up to 300 A peak discharge.

IC Role / Device Role / Timing Role: Primary high-side switch for pack isolation and fault protection during insertion/removal or overcurrent events.

Use Value: Ultra-low R_DS(on) minimizes voltage drop across sense resistors and preserves state-of-charge accuracy while supporting fast fault response via low Q_g.

Use Scenario: Inrush current limiting and live-insertion protection for redundant 24 V server backplanes and telecom line cards.

IC Role / Device Role / Timing Role: Main OR-ing FET in active hot-swap circuit, controlled by dedicated hot-swap controller ICs like LTC4215 or TPS2375.

Use Value: Low V_GS(th) and high I_D rating allow rapid turn-on with minimal gate drive overhead, reducing insertion delay and improving system availability.

High-Current DC/DC Converter

Industrial Motor Drive Half-Bridge

Use Scenario: Synchronous rectifier in 24 V input, 12 V/100 A output isolated forward converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 250 kHz with gate driven by transformer-coupled or integrated driver.

Use Value: 60.5 nC Q_g and 302 pF Crss enable efficient zero-voltage switching (ZVS) transition, reducing EMI and improving efficiency above 95 %.

Use Scenario: High-side switch in 24 V brushed DC motor H-bridge driving 50 A stall current in factory automation actuators.

IC Role / Device Role / Timing Role: Upper-leg power switch paired with complementary low-side MOSFET, driven by bootstrap gate driver.

Use Value: Robust body diode (V_SD = 0.7–1.1 V, t_rr = 60 ns) sustains freewheeling current during dead-time without external Schottky clamp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 1.4 mΩ @ 4.5 V; Q_g = 42 nC; TO-220AB package	Larger footprint and higher R_thJA; suited for lower-frequency, forced-air-cooled designs	Choose when board space permits larger package and thermal management uses heatsinks instead of PCB copper
SIR872DP-T1-GE3	R_DS(on) = 0.95 mΩ @ 4.5 V; Q_g = 72 nC; same PowerPAK SO-8 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >200 A	Acceptable for cost-sensitive designs where 13 % higher R_DS(on) and 19 % higher Q_g are tolerable

Compared with IRL8721PBF and SIR872DP-T1-GE3, the SIRA90ADP-T1-GE3 delivers the lowest R_DS(on) × Q_g FOM in its class, enabling highest efficiency in space-constrained, high-current 24 V systems without sacrificing ruggedness or thermal performance.

Availability

SIRA90ADP-T1-GE3 is available at Aetrix Electronics and suitable for battery management, hot-swap switching, and high-current DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIRA90ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIRA90ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for ultra-low-loss switching in high-current 24 V industrial, computing, and energy storage systems.

FAQ

What is the maximum continuous drain current rating for SIRA90ADP-T1-GE3 at case temperature of 70 °C?

The SIRA90ADP-T1-GE3 supports 267 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature, and reflects derating from the 334 A value at T_C = 25 °C due to thermal resistance limitations.

Does SIRA90ADP-T1-GE3 have a guaranteed avalanche rating, and if so, what is it?

Yes, the SIRA90ADP-T1-GE3 has a guaranteed single-pulse avalanche rating: I_AS = 60 A (L = 0.1 mH) and E_AS = 180 mJ. These values are production-tested per Vishay's UIS qualification standard and ensure reliability in inductive load switching and fault conditions where voltage spikes occur.

Can SIRA90ADP-T1-GE3 be used with 3.3 V gate drive, and what is its R_DS(on) under that condition?

Yes, the SIRA90ADP-T1-GE3 is fully logic-level compatible and specifies R_DS(on) = 1.07 mΩ max at V_GS = 4.5 V. While not explicitly rated at 3.3 V, its V_GS(th) range of 1.0–2.2 V ensures turn-on; however, R_DS(on) rises significantly below 4.5 V - typical data shows ~1.5 mΩ at 3.3 V, making 4.5 V or higher preferred for minimal conduction loss in the SIRA90ADP-T1-GE3.

What is the thermal resistance from junction to ambient (R_thJA) for SIRA90ADP-T1-GE3 on a standard FR4 board?

The SIRA90ADP-T1-GE3 has R_thJA = 15 °C/W typical and 20 °C/W maximum when mounted on a 1" × 1" FR4 board with 2 oz copper, per the Thermal Resistance Ratings table. This value assumes standard solder paste volume and reflow profile; actual performance improves with enhanced copper area and thermal vias beneath the exposed drain paddle.

Is SIRA90ADP-T1-GE3 suitable for synchronous rectification in a 250 kHz DC/DC converter?

Yes, the SIRA90ADP-T1-GE3 is well-suited for synchronous rectification at 250 kHz due to its low Q_g (60.5 nC typ. at 4.5 V), low Crss (302 pF), and fast switching times (t_d(off) = 55–110 ns). Its low R_DS(on) also minimizes conduction loss during high-duty-cycle operation, making it effective in forward and LLC topologies where the SIRA90ADP-T1-GE3 replaces Schottky diodes.

SIRA90ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Cut Tape (CT)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 71A (Ta), 334A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 0.78mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 195 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 9120 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.3W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA90ADP-T1-GE3 FAQ

1.How can I place an order for SIRA90ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA90ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA90ADP-T1-GE3 reliable?

The price and inventory of SIRA90ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA90ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA90ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA90ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA90ADP-T1-GE3?

SIRA90ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA90ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA90ADP-T1-GE3?

For technical support, including SIRA90ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA90ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA90ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA90ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA90ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA90ADP-T1-GE3?

All SIRA90ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA90ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA90ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA90ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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