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Vishay Siliconix SIRA90DP-T1-GE3
- Part No.:
- SIRA90DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA90DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 100A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,357
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Product details
Overview
SIRA90DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering 100 A continuous drain current at TC = 25 °C, RDS(on) of 0.80 mΩ at VGS = 10 V and 1.15 mΩ at VGS = 4.5 V, and 48 nC total gate charge - optimized for high-current synchronous rectification in server VRMs and embedded DC/DC converters.
For engineers reviewing the SIRA90DP-T1-GE3 datasheet, SIRA90DP-T1-GE3 pinout, SIRA90DP-T1-GE3 application, or SIRA90DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 A thermal-limited current capability, PowerPAK SO-8 leadless footprint compatibility with standard SO-8 layouts, and robust UIS-rated construction for high-reliability power conversion stages.
Technical Context
This MOSFET employs a trench-based silicon structure enabling ultra-low on-resistance while maintaining fast switching performance: Qg = 48 nC (VGS = 4.5 V), trr = 68 ns (body diode), and Crss/Ciss = 0.031 - supporting high-frequency operation in synchronous buck topologies. Its gate threshold voltage (VGS(th) = 0.8–2.0 V) ensures stable turn-on under low-voltage control rails.
The device integrates a robust body diode with VSD = 0.68 V (IS = 10 A) and Qrr = 98 nC, enabling efficient reverse recovery in OR-ing and bidirectional power paths. Thermal design leverages the PowerPAK SO-8's exposed drain pad, achieving RthJC = 0.9 °C/W (typical) and RthJA = 15 °C/W (t ≤ 10 s) on FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 12 V and 24 V input systems |
| RDS(on) max @ VGS = 10 V | 0.00080 Ω - enables <1 W conduction loss at 35 A, critical for high-efficiency VRMs |
| RDS(on) max @ VGS = 4.5 V | 0.00115 Ω - supports direct drive from 5 V or 3.3 V controllers without level-shifting |
| ID (continuous, TC = 25 °C) | 100 A - thermal-limited current rating suitable for single-phase CPU/GPU power stages |
| Qg typ. @ VGS = 4.5 V | 48 nC - balances switching speed and gate driver loading in 300–1000 kHz designs |
| RthJC (typ.) | 0.9 °C/W - enables high-power dissipation via PCB copper, matching DPAK-level thermal performance |
| Body diode VSD | 0.68 V (IS = 10 A) - reduces forward conduction loss during dead-time in synchronous rectification |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 5 mm × 6.15 mm footprint, identical to standard SO-8 but featuring an exposed bottom-side drain pad for enhanced thermal transfer. The package uses copper substrate construction with tin-silver matte finish (Pb-free/halogen-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain connection including large bottom-side copper pad for low-impedance thermal and current path |
| Gate (G) | Control input | Single gate terminal (pin 1 top view per datasheet diagram) with Rg = 0.5–2.5 Ω for predictable turn-on/turn-off timing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Enables 0.80 mΩ RDS(on) at 30 V while maintaining >40 A avalanche current rating (IAS = 40 A) |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress |
| PowerPAK SO-8 footprint | Direct drop-in replacement for standard SO-8 layouts, with 30 % lower RthJA than legacy SO-8 packages |
| Exposed drain pad | Provides direct thermal path to PCB copper, achieving 0.9 °C/W junction-to-case resistance |
| Low Crss/Ciss ratio | 0.031 - minimizes Miller effect, improving noise immunity and enabling stable high-speed switching |
Applications
| Server VRM High-Side Switch | OR-ing Controller Backplane |
|---|---|
Use Scenario: Primary high-side switch in multiphase 48 V–12 V intermediate bus converter feeding CPU core voltage rail. IC Role / Device Role / Timing Role: Main power switch conducting up to 100 A DC with <100 ns switching transitions synchronized to PWM controller. Use Value: 0.80 mΩ RDS(on) limits conduction loss to <0.8 W at 32 A, enabling >95 % efficiency at full load while operating below 100 °C junction temperature. | Use Scenario: Redundant 12 V power supply backplane where two supplies feed common bus via ideal diode configuration. IC Role / Device Role / Timing Role: Low-VF active rectifier replacing Schottky diodes, controlled by dedicated OR-ing IC to prevent reverse current flow. Use Value: 0.68 V body diode forward voltage and 100 A continuous rating allow 40 % lower heat generation versus 40 V Schottky alternatives, reducing heatsink requirements. |
| High-Density DC/DC Module | Synchronous Rectifier in POL Converter |
Use Scenario: Integrated 30 A, 12 V output DC/DC module for telecom baseband processing units with strict board area constraints. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 600 kHz, driven by gate driver with 4.5 V logic-level output. Use Value: 1.15 mΩ RDS(on) at VGS = 4.5 V eliminates need for gate boost circuitry, simplifying layout and reducing BOM count. | Use Scenario: Point-of-load converter supplying FPGA I/O banks requiring fast transient response and minimal voltage droop. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback topology, conducting peak currents >80 A during load transients. Use Value: 400 A pulsed drain current rating (IDM) and 80 mJ avalanche energy (EAS) ensure safe operation during short-circuit events without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 0.95 mΩ @ 10 V; Qg = 42 nC; same PowerPAK SO-8 package | Lower gate charge improves switching efficiency above 500 kHz but slightly higher conduction loss | Select when prioritizing reduced switching loss over absolute minimum RDS(on) in high-frequency designs |
| IRLHS6342TRPBF | RDS(on) = 0.90 mΩ @ 4.5 V; Qg = 52 nC; SO-8 (leaded) package | Leaded SO-8 requires different land pattern and offers higher RthJA (~35 °C/W), limiting current handling | Choose only if legacy SO-8 assembly infrastructure prohibits adoption of leadless packages |
Compared with SiR626DP-T1-GE3, SIRA90DP-T1-GE3 delivers lower conduction loss at both 4.5 V and 10 V gate drive, making it preferable for high-current, thermally constrained VRMs; versus IRLHS6342TRPBF, it provides superior thermal performance and higher current capability due to PowerPAK's exposed drain pad and lower RthJC.
Availability
SIRA90DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial power supplies requiring stable component supply, long-term manufacturability, and Pb-free/halogen-free compliance.
Supply support for SIRA90DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA90DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-current, high-efficiency synchronous rectification and load switching in next-generation computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SIRA90DP-T1-GE3 at 70 °C case temperature?
SIRA90DP-T1-GE3 supports 100 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and is identical to its rating at TC = 25 °C due to the PowerPAK SO-8's low RthJC (0.9 °C/W typical) and robust copper construction.
Does SIRA90DP-T1-GE3 require a gate resistor for reliable operation in a 600 kHz synchronous buck converter?
Yes - although SIRA90DP-T1-GE3 has a typical gate resistance of 0.5–2.5 Ω, an external gate resistor (typically 1–5 Ω) is recommended to dampen ringing, control dV/dt, and limit peak gate current from the driver. The datasheet specifies switching times (e.g., td(on) = 51 ns at VGEN = 4.5 V, Rg = 1 Ω), confirming that gate resistance directly impacts timing behavior in high-frequency applications like 600 kHz buck converters.
Can SIRA90DP-T1-GE3 be used as a replacement for standard SO-8 packaged MOSFETs without PCB layout changes?
Yes - SIRA90DP-T1-GE3 uses the PowerPAK SO-8 package with identical 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, allowing direct mounting on existing SO-8 land patterns. However, optimal thermal performance requires extending the drain pad copper area, as the exposed bottom-side drain relies on PCB copper for heat dissipation - unlike leaded SO-8 devices.
What is the body diode reverse recovery charge (Qrr) of SIRA90DP-T1-GE3, and why does it matter in synchronous rectification?
SIRA90DP-T1-GE3 has a typical body diode Qrr of 98 nC (max 180 nC) at IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C. In synchronous rectification, low Qrr minimizes switching losses during the dead-time interval when the body diode conducts briefly before the synchronous FET turns on - directly improving efficiency and reducing EMI in high-frequency DC/DC converters.
Is SIRA90DP-T1-GE3 qualified for automotive applications per AEC-Q101?
No - SIRA90DP-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (–55 °C to +150 °C) and intended for computing, telecom, and industrial power applications. For automotive-grade equivalents, consult Vishay's AQ-series PowerPAK SO-8 MOSFETs such as SQJA81EP, which undergo full AEC-Q101 stress testing and qualification.
SIRA90DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 153 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10180 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA90DP-T1-GE3 FAQ
1.How can I place an order for SIRA90DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA90DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA90DP-T1-GE3 reliable?
The price and inventory of SIRA90DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA90DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA90DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA90DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA90DP-T1-GE3?
SIRA90DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA90DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA90DP-T1-GE3?
For technical support, including SIRA90DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA90DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA90DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA90DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA90DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA90DP-T1-GE3?
All SIRA90DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA90DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA90DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA90DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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