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Vishay Siliconix SIRA96DP-T1-GE3
- Part No.:
- SIRA96DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA96DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 16A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,243
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Product details
Overview
SIRA96DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 16 A continuous drain current at TC = 25 °C, with RDS(on) of 8.8 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V, optimized for synchronous buck converters and high-density DC/DC power stages.
For engineers reviewing the SIRA96DP-T1-GE3 datasheet, SIRA96DP-T1-GE3 pinout, SIRA96DP-T1-GE3 application, or SIRA96DP-T1-GE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.8 °C/W), gate charge (Qg = 9.9 nC at 4.5 V), avalanche energy rating (EAS = 11.25 mJ), body diode recovery (trr = 50–100 ns), and leadless PowerPAK SO-8 layout compatibility for high-efficiency power switching designs.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching with controlled dV/dt, supporting high-frequency operation in synchronous rectification topologies. Its 100 % Rg and UIS testing ensures gate robustness and avalanche reliability under transient stress.
The device integrates a low-VF body diode (VSD = 0.77–1.1 V at IS = 5 A) and exhibits low Crss (37 pF) and Ciss (1385 pF), enabling stable gate drive and reduced EMI in tightly regulated power supplies. Thermal design leverages a low junction-to-case resistance (2.8 °C/W) for efficient heat transfer to PCB copper or heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 30 V - Supports input rails up to 24 V nominal systems with margin for transients. |
| RDS(on) @ 10 V | 8.8 mΩ - Enables <1 W conduction loss at 10 A, critical for high-current buck output stages. |
| RDS(on) @ 4.5 V | 12.0 mΩ - Ensures reliable turn-on with 5 V or logic-level gate drivers in compact DC/DC modules. |
| Qg (typ) | 9.9 nC at VGS = 4.5 V - Low gate charge reduces driver power and switching losses below 1 MHz. |
| EAS | 11.25 mJ - Rated single-pulse avalanche energy allows safe operation during inductive load switching events. |
| RthJC | 2.8 °C/W - Enables direct thermal path to PCB copper pour or heatsink, supporting >20 W dissipation with minimal ΔT. |
| trr / Qrr | 50–100 ns / 75–150 nC - Fast, low-charge body diode minimizes reverse recovery loss in synchronous rectifier mode. |
Pinout & Package
Package: PowerPAK® SO-8 - leadless, surface-mount, thermally enhanced package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); compatible with standard SO-8 footprints but requires specific solder paste stencil and reflow profile per Vishay doc 73257.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large exposed copper paddle for optimal thermal and electrical conduction. |
| Gate (G) | Control input | Single gate terminal (Pin 1 not used as gate; actual gate is Pin ? - confirmed from top view: Gate is Pin 1 per datasheet top-view diagram labeled "G" at Pin 1 position) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS(on) × Qg figure-of-merit in its voltage class, improving efficiency in 300 kHz–2 MHz DC/DC converters. |
| Tuned for transient spike reduction | Optimized dV/dt immunity and gate charge distribution suppress voltage overshoot during hard switching and light-load transitions. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for automotive and industrial reliability. |
| Lead (Pb)-free and halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C requirements without compromising thermal or electrical performance. |
| PowerPAK SO-8 thermal design | Exposed drain paddle provides 3× lower RthJC than standard SO-8, enabling higher power density without external heatsinks. |
Applications
| Server VRM | Industrial Motor Drive |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 100 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side switch position, operating at 500 kHz–1 MHz with 40–60 ns dead time. Use Value: 8.8 mΩ RDS(on) at 10 V and 12.0 mΩ at 4.5 V enables <1.2 W conduction loss at 10 A, while 9.9 nC Qg minimizes gate drive loss and improves phase efficiency by ≥0.8% vs. legacy Gen III devices. |
Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 5–10 A peak loads in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch handling PWM commutation at 20–40 kHz with bidirectional body diode conduction during freewheeling. Use Value: 50–100 ns trr and 75–150 nC Qrr reduce body diode recovery loss by >30% versus standard MOSFETs, lowering MOSFET temperature rise and enabling smaller heatsinks. |
| Battery Protection IC Interface | High-Density Telecom PSU |
Use Scenario: Load switch between battery pack and system bus in portable medical equipment requiring overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Single N-channel load switch controlled by battery management IC, handling 15 A continuous with fast turn-off (<25 ns fall time). Use Value: 16 A ID rating at TC = 25 °C and 11.25 mJ EAS ensure survivability during 50 A short-circuit events, while 0.2–1.4 Ω Rg supports clean gate control without external damping. |
Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated DC/DC module for 5G base station power shelves. IC Role / Device Role / Timing Role: High-efficiency rectifier replacing Schottky diodes, operating in ZVS-assisted topology at 300–600 kHz. Use Value: 2.8 °C/W RthJC allows >22 W dissipation at TC = 70 °C, supporting 30 A output current in 12 mm × 12 mm footprint without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA40DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V (lower), Qg = 15.5 nC @ 4.5 V (higher), same PowerPAK SO-8 package. | Better conduction loss at high current, but higher gate drive demand limits use in ultra-high-frequency (>1.5 MHz) designs. | Select when minimizing I²R loss dominates over switching loss; verify gate driver capability for 15.5 nC charge. |
| IRLML6344TRPBF | RDS(on) = 22 mΩ @ 4.5 V (higher), Qg = 4.2 nC (lower), SOT-23 package, 4.3 A ID rating. | Lower current capacity and higher on-resistance limit use to sub-5 A loads; small footprint suits space-constrained IoT nodes. | Choose only for low-power, board-area-sensitive applications where 16 A rating and thermal performance of SIRA96DP-T1-GE3 are unnecessary. |
Compared with SiRA40DP-T1-GE3, SIRA96DP-T1-GE3 trades 5.2 mΩ higher RDS(on) for 5.6 nC lower Qg-favoring high-frequency, medium-current operation. Against IRLML6344TRPBF, it delivers 3.7× higher current rating and 2.4× lower RDS(on) at 4.5 V, making it suitable for industrial-grade power stages rather than consumer microloads.
Availability
SIRA96DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, battery management systems, and motor drive control requiring stable component supply, full traceability, and long-term production support.
Supply support for SIRA96DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA96DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current DC/DC conversion in server, telecom, and industrial power supplies where low RDS(on) × Qg and robust avalanche capability are essential.
FAQ
What is the maximum continuous drain current rating for SIRA96DP-T1-GE3 at 70 °C case temperature?
The SIRA96DP-T1-GE3 is rated for 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction and assumes proper PCB copper area per Vishay Application Note 826. At TC = 25 °C, the rating increases to 16 A.
Does SIRA96DP-T1-GE3 support logic-level gate drive?
Yes, SIRA96DP-T1-GE3 is fully logic-level compatible: its RDS(on) is specified at 12.0 mΩ with VGS = 4.5 V, and VGS(th) ranges from 1.0 V to 2.2 V, ensuring robust turn-on with standard 5 V or 4.5 V microcontroller outputs or gate drivers without level-shifting circuitry.
What is the thermal resistance from junction to ambient (RthJA) for SIRA96DP-T1-GE3 on a standard FR4 board?
Per the datasheet, the maximum RthJA for SIRA96DP-T1-GE3 mounted on a 1" × 1" FR4 board is 34 °C/W (typical 24 °C/W). This value assumes no additional heatsinking; using larger copper pours or internal layers can reduce RthJA significantly-designers should reference Vishay's thermal simulation guidelines in doc 76345.
Is SIRA96DP-T1-GE3 suitable for avalanche-rated applications?
Yes, SIRA96DP-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 15 A single-pulse avalanche current and 11.25 mJ single-pulse avalanche energy. These validated ratings make it appropriate for inductive load switching, such as motor drives and solenoid control, where voltage spikes exceed VDS(max).
What is the gate-to-source leakage current specification for SIRA96DP-T1-GE3?
The gate-to-source leakage current (IGSS) for SIRA96DP-T1-GE3 is specified as ≤100 nA at VGS = ±20 V / ±16 V and TJ = 25 °C. This low leakage supports stable gate bias in high-impedance drive circuits and ensures minimal standby power loss in always-on load switch configurations.
SIRA96DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1385 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 34.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA96DP-T1-GE3 FAQ
1.How can I place an order for SIRA96DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA96DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA96DP-T1-GE3 reliable?
The price and inventory of SIRA96DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA96DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA96DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA96DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA96DP-T1-GE3?
SIRA96DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA96DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA96DP-T1-GE3?
For technical support, including SIRA96DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA96DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA96DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA96DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA96DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA96DP-T1-GE3?
All SIRA96DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA96DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA96DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA96DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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