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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRC04DP-T1-GE3

Name: SIRC04DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRC04DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRC04DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRC04DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 60A PPAK SO-8

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Product details

Overview

SIRC04DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET with monolithically integrated SkyFET® Schottky diode in PowerPAK® SO-8 package. It delivers R_DS(on) = 2.45 mΩ at V_GS = 10 V, Q_g = 16.6 nC (at 4.5 V), and supports 60 A continuous drain current (T_C = 25 °C), enabling high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIRC04DP-T1-GE3 datasheet, SIRC04DP-T1-GE3 pinout, SIRC04DP-T1-GE3 application, or SIRC04DP-T1-GE3 equivalent, key selection criteria include its integrated Schottky body diode (V_SD = 0.45–0.7 V at 5 A), low gate charge for fast switching, and thermal performance (R_thJC = 1.9 °C/W) in compact leadless PowerPAK SO-8.

Technical Context

This device integrates a single N-channel MOSFET and a co-packaged Schottky diode on one die-enabling synchronous buck topologies without external diode placement. Its trench-based Gen IV process achieves low R_DS(on) and optimized C_iss/C_rss ratio (0.026–0.052) for reduced switching loss and EMI control.

The PowerPAK SO-8 package uses exposed copper drain pads on the bottom for direct thermal path to PCB, with no plated finish on singulated edges. It requires reflow-only assembly per JEDEC J-STD-020; manual soldering is not recommended due to leadless construction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) @ 10 V	2.45 mΩ - Enables <1 W conduction loss at 20 A in high-current POL converters
R_DS(on) @ 4.5 V	3.50 mΩ - Ensures robust operation with 5 V gate drive in logic-level applications
Q_g @ 4.5 V	16.6 nC - Supports >1 MHz switching with moderate gate driver strength (e.g., UCC2753x)
V_SD @ 5 A	0.45–0.7 V - Reduces reverse recovery loss vs. standard body diode; enables soft-switching benefits
I_D (continuous)	60 A @ T_C = 25 °C - Rated for high-current output stages with adequate heatsinking
R_thJC	1.9 °C/W - Allows direct thermal coupling to inner-layer copper or thermal vias for junction temp control

Pinout & Package

PowerPAK® SO-8 Single: 6.15 mm × 5.15 mm × 1.04 mm, leadless, exposed-drain thermal pad on bottom surface. No plating on singulated edge; solder fillet at tip not required.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for MOSFET and Schottky cathode; tied to power ground plane
5, 6, 7, 8	Drain (D)	Exposed copper drain pad (bottom) + top-side terminals; primary thermal and current path to output node
Gate (G)	Control terminal	Pin 1 is gate; isolated from drain/source; requires <2 V threshold margin for reliable turn-on

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 2.45 mΩ R_DS(on) at 10 V while maintaining rugged UIS performance (E_AS = 11.25 mJ)
SkyFET® monolithic Schottky	Eliminates external diode; reduces trr to 38–76 ns and Q_rr to 31–62 nC vs. standard body diode
100 % R_g and UIS tested	Ensures gate resistance consistency (0.4–2 Ω) and avalanche robustness in hard-switching conditions
PowerPAK SO-8 thermal design	Exposes drain copper directly to PCB for <2 °C/W effective thermal resistance with 4× thermal vias
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C; suitable for automotive and industrial end equipment

Applications

Server VRM Output Stage	Industrial 48 V-to-12 V Buck Converter
Use Scenario: High-current, high-frequency point-of-load regulation delivering up to 120 A per phase in dual-phase server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-side/low-side configuration; replaces discrete MOSFET + Schottky combo. Use Value: Integrated Schottky reduces dead-time losses and eliminates reverse recovery spikes, improving efficiency by ~0.8% at 20 A load.	Use Scenario: Isolated or non-isolated 48 V input DC/DC module powering PLC I/O modules and motor drivers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz–1 MHz buck stage; handles peak currents >50 A with minimal thermal derating. Use Value: 2.45 mΩ R_DS(on) limits conduction loss to <0.6 W at 50 A, enabling compact heatsink-free design on 2 oz copper PCB.
Telecom Base Station PSU	Automotive ADAS Camera Power Supply
Use Scenario: 54 V input telecom rectifier feeding intermediate bus (12 V or 5 V) for RF amplifiers and digital signal processors. IC Role / Device Role / Timing Role: Primary low-side switch in multiphase interleaved buck converter; operates at 400–600 kHz with tight duty cycle control. Use Value: Low Q_g (16.6 nC @ 4.5 V) minimizes gate drive loss and allows use of cost-effective dual-channel drivers (e.g., LM5113).	Use Scenario: Compact 12 V-to-3.3 V/1.8 V power supply for CMOS image sensors and ISP SoCs in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Synchronous rectifier in small-footprint buck regulator operating at 2 MHz to avoid AM band interference. Use Value: SkyFET® Schottky enables clean zero-voltage switching transition, reducing EMI emissions below CISPR-25 Class 5 limits without added filtering.

Server VRM Output Stage

Industrial 48 V-to-12 V Buck Converter

Use Scenario: High-current, high-frequency point-of-load regulation delivering up to 120 A per phase in dual-phase server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-side/low-side configuration; replaces discrete MOSFET + Schottky combo.

Use Value: Integrated Schottky reduces dead-time losses and eliminates reverse recovery spikes, improving efficiency by ~0.8% at 20 A load.

Use Scenario: Isolated or non-isolated 48 V input DC/DC module powering PLC I/O modules and motor drivers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz–1 MHz buck stage; handles peak currents >50 A with minimal thermal derating.

Use Value: 2.45 mΩ R_DS(on) limits conduction loss to <0.6 W at 50 A, enabling compact heatsink-free design on 2 oz copper PCB.

Telecom Base Station PSU

Automotive ADAS Camera Power Supply

Use Scenario: 54 V input telecom rectifier feeding intermediate bus (12 V or 5 V) for RF amplifiers and digital signal processors.

IC Role / Device Role / Timing Role: Primary low-side switch in multiphase interleaved buck converter; operates at 400–600 kHz with tight duty cycle control.

Use Value: Low Q_g (16.6 nC @ 4.5 V) minimizes gate drive loss and allows use of cost-effective dual-channel drivers (e.g., LM5113).

Use Scenario: Compact 12 V-to-3.3 V/1.8 V power supply for CMOS image sensors and ISP SoCs in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in small-footprint buck regulator operating at 2 MHz to avoid AM band interference.

Use Value: SkyFET® Schottky enables clean zero-voltage switching transition, reducing EMI emissions below CISPR-25 Class 5 limits without added filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	Higher V_DS (60 V), higher R_DS(on) (3.2 mΩ @ 10 V), same PowerPAK SO-8 package	Targeted for 48 V systems requiring higher blocking margin; less efficient at 12 V input	Select when system input exceeds 36 V or transient overvoltage >40 V is expected
IRFH8326TRPBF	Same V_DS (30 V), slightly higher R_DS(on) (2.7 mΩ @ 10 V), different pinout (gate on pin 3), PQFN 5×6 mm	Requires PCB layout change; lacks monolithic Schottky-uses standard body diode only	Choose only if existing layout uses IRFH8326 footprint and Schottky integration is not critical

Compared with SiR872DP-T1-GE3 and IRFH8326TRPBF, the SIRC04DP-T1-GE3 offers lowest R_DS(on) and true monolithic Schottky integration in 30 V class-making it optimal for space-constrained, high-efficiency 12 V and 24 V synchronous buck designs where layout reuse and thermal performance are prioritized.

Availability

SIRC04DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIRC04DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SIRC04DP-T1-GE3 belongs to Vishay's SkyFET® family-designed specifically for high-frequency synchronous rectification in DC/DC conversion, where integrated Schottky performance and thermal efficiency outweigh cost-sensitive discrete alternatives.

FAQ

What is the maximum continuous drain current rating for SIRC04DP-T1-GE3 at case temperature of 70 °C?

The SIRC04DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥4 thermal vias under the exposed drain pad and 2 oz copper on inner layers. Derating applies above 70 °C case temperature per the current derating curve on page 5 of the datasheet.

Does SIRC04DP-T1-GE3 have a monolithic Schottky diode or a standard body diode?

The SIRC04DP-T1-GE3 integrates a monolithic SkyFET® Schottky diode-not a standard parasitic body diode. This is confirmed in the product summary ("SkyFET® with monolithic Schottky") and verified by measured V_SD = 0.45–0.7 V at 5 A and trr = 38–76 ns, which are characteristic of Schottky behavior, not PN junction recovery.

What is the gate threshold voltage range for SIRC04DP-T1-GE3, and how does it affect logic-level drive compatibility?

The SIRC04DP-T1-GE3 has a gate threshold voltage V_GS(th) of 1.0–2.1 V (min–max) at T_J = 25 °C. This ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers. At V_GS = 4.5 V, R_DS(on) remains low (3.50 mΩ max), confirming strong enhancement-mode operation suitable for microcontroller-driven power stages.

Can SIRC04DP-T1-GE3 be used in avalanche-rated applications, and what is its single-pulse avalanche energy rating?

Yes-the SIRC04DP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ at I_AS = 15 A and L = 0.3 mH. This makes it suitable for hard-switched topologies like flyback or active clamp forward converters where transient overvoltage may occur during turn-off.

What is the recommended reflow profile and why is manual soldering discouraged for SIRC04DP-T1-GE3?

The SIRC04DP-T1-GE3 requires JEDEC J-STD-020-compliant reflow per Vishay document 73257; peak temperature ≤260 °C. Manual soldering is discouraged because the PowerPAK SO-8 is leadless with exposed copper drain on the bottom-thermal mass mismatch and uneven heating risk voids or insufficient wetting. Rework must use infrared or hot-air profiling, not iron contact.

SIRC04DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.45mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2850 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRC04DP-T1-GE3 FAQ

1.How can I place an order for SIRC04DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRC04DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRC04DP-T1-GE3 reliable?

The price and inventory of SIRC04DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRC04DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRC04DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRC04DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRC04DP-T1-GE3?

SIRC04DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRC04DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRC04DP-T1-GE3?

For technical support, including SIRC04DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRC04DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRC04DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRC04DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRC04DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRC04DP-T1-GE3?

All SIRC04DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRC04DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRC04DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRC04DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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