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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRC06DP-T1-GE3

Name: SIRC06DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRC06DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRC06DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRC06DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 32A/60A PPAK SO8

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Product details

Overview

SIRC06DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET with integrated monolithic Schottky diode in PowerPAK® SO-8 package, delivering R_DS(on) = 2.7 mΩ at V_GS = 10 V, Q_g = 17.5 nC (at 4.5 V), and 60 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous buck converters and DC/DC rectification stages.

For engineers reviewing the SIRC06DP-T1-GE3 datasheet, SIRC06DP-T1-GE3 pinout, SIRC06DP-T1-GE3 application, or SIRC06DP-T1-GE3 equivalent, this device offers verified UIS robustness, 100 % R_g testing, and SkyFET® integration enabling reduced body diode conduction loss and faster reverse recovery in high-frequency switching topologies.

Technical Context

This MOSFET employs a trench-based silicon structure with monolithically integrated Schottky diode to eliminate minority-carrier storage delay and reduce V_SD to 0.47 V (typ.) at I_S = 5 A. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 29 ns and t_f = 9 ns under 4.5 V drive conditions.

The device features low thermal resistance (R_thJC = 1.9 °C/W typ.) and operates across -55 °C to +150 °C junction temperature range. It is rated for 15 A single-pulse avalanche current (I_AS) and 11.25 mJ E_AS, confirming ruggedness in inductive switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and 12 V intermediate bus architectures.
R_DS(on) @ 10 V	2.7 mΩ max - Enables <1 W conduction loss at 60 A, critical for high-current CPU/GPU VRMs.
R_DS(on) @ 4.5 V	4.0 mΩ max - Ensures stable on-resistance under 5 V gate drive, supporting logic-level controller compatibility.
Q_g @ 4.5 V	17.5 nC typ. - Low gate charge reduces driver power demand and switching losses in 300–1000 kHz DC/DC converters.
I_D (continuous)	60 A @ T_C = 25 °C - Supports high-current output stages without external heatsinking when mounted on 1" × 1" FR4.
V_SD	0.47 V typ. @ I_S = 5 A - Schottky diode forward voltage enables lower-loss freewheeling than standard body diodes.
t_rr	31 ns typ. - Fast reverse recovery minimizes shoot-through risk and improves efficiency in synchronous rectification.
R_thJC	1.9 °C/W typ. - Enables direct thermal coupling to PCB copper or heatsink for sustained high-power operation.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal MOSFET and Schottky cathode; electrically tied to exposed bottom paddle via multiple internal vias.
5	Gate (G)	Control terminal; requires ≤20 V positive / ≤16 V negative bias; R_g = 0.4–2 Ω ensures stable gate drive impedance.
6, 7, 8	Drain (D)	High-current drain node connected to large exposed copper paddle on bottom surface; primary thermal and power path to PCB.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon process	Delivers lowest R_DS(on) × Q_g figure-of-merit in its voltage class, reducing total switching + conduction loss.
SkyFET® monolithic Schottky integration	Eliminates discrete diode placement, reduces layout parasitics, and cuts V_SD by >40 % vs. standard MOSFET body diodes.
100 % R_g and UIS tested	Guarantees gate resistance consistency and avalanche energy handling (E_AS = 11.25 mJ) per unit, improving system reliability.
PowerPAK® SO-8 leadless construction	Maximizes copper area for thermal dissipation and current carrying capacity while maintaining SO-8 footprint compatibility.
Low Q_gd/Q_g ratio	Cr_ss/C_iss = 0.025–0.050 stabilizes switching behavior during Miller plateau, easing gate driver design.

Applications

Server VRM Phase Legs	Industrial DC/DC Buck Converters
Use Scenario: High-current, multi-phase voltage regulator modules supplying CPUs and FPGAs in data center servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck topology operating at 300–600 kHz. Use Value: 2.7 mΩ R_DS(on) and 31 ns t_rr minimize conduction and switching losses, enabling >95 % efficiency at 50–100 A per phase.	Use Scenario: 24 V to 5 V/3.3 V point-of-load conversion in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in non-isolated buck converter with 4.5 V gate drive from PWM controller. Use Value: 4.0 mΩ R_DS(on) at 4.5 V ensures stable on-resistance without level-shifting, simplifying control circuitry.
Laptop CPU Power Stages	Telecom Intermediate Bus Converters
Use Scenario: Compact, thermally constrained 12 V to 1.0–1.8 V CPU core supply in ultrabooks and thin clients. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in dual-phase buck converter with tight thermal envelope. Use Value: 1.9 °C/W R_thJC allows direct thermal transfer to internal ground plane, limiting ΔT to <30 °C at 40 A.	Use Scenario: 48 V to 12 V intermediate bus conversion in 5G base station power systems. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in hard-switched buck converter operating at 250 kHz with high dV/dt stress. Use Value: 36 V transient V_DSt rating and 15 A I_AS withstand capability ensure robustness against line transients and inductive kickback.

Server VRM Phase Legs

Industrial DC/DC Buck Converters

Use Scenario: High-current, multi-phase voltage regulator modules supplying CPUs and FPGAs in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck topology operating at 300–600 kHz.

Use Value: 2.7 mΩ R_DS(on) and 31 ns t_rr minimize conduction and switching losses, enabling >95 % efficiency at 50–100 A per phase.

Use Scenario: 24 V to 5 V/3.3 V point-of-load conversion in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in non-isolated buck converter with 4.5 V gate drive from PWM controller.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V ensures stable on-resistance without level-shifting, simplifying control circuitry.

Laptop CPU Power Stages

Telecom Intermediate Bus Converters

Use Scenario: Compact, thermally constrained 12 V to 1.0–1.8 V CPU core supply in ultrabooks and thin clients.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in dual-phase buck converter with tight thermal envelope.

Use Value: 1.9 °C/W R_thJC allows direct thermal transfer to internal ground plane, limiting ΔT to <30 °C at 40 A.

Use Scenario: 48 V to 12 V intermediate bus conversion in 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in hard-switched buck converter operating at 250 kHz with high dV/dt stress.

Use Value: 36 V transient V_DSt rating and 15 A I_AS withstand capability ensure robustness against line transients and inductive kickback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 19.5 nC @ 4.5 V; same PowerPAK SO-8 package.	Higher R_DS(on) increases conduction loss by ~18 % at 60 A; suitable where margin exists for thermal headroom.	Select when cost sensitivity outweighs marginal efficiency gain; identical layout and drive requirements.
IRF6642TRPBF	R_DS(on) = 2.8 mΩ @ 10 V; no integrated Schottky; PQFN 5×6 mm package; higher C_iss (2700 pF).	Lacks monolithic Schottky, requiring external diode or body-diode operation with higher V_SD (~0.9 V) and slower t_rr.	Choose only if existing design uses IRF6642 footprint and Schottky function is handled externally; not drop-in.

Compared with SiR626DP-T1-GE3, SIRC06DP-T1-GE3 delivers lower conduction loss and gate charge; versus IRF6642TRPBF, it provides integrated Schottky functionality and superior reverse recovery performance - making it preferred for new high-efficiency synchronous rectifier designs.

Availability

SIRC06DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC buck converters, and telecom intermediate bus applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIRC06DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIRC06DP-T1-GE3 belongs to Vishay's SkyFET® family, engineered specifically for high-frequency synchronous rectification and low-voltage, high-current DC/DC conversion where integrated Schottky performance and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for SIRC06DP-T1-GE3 at 70 °C case temperature?

The SIRC06DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to its low R_DS(on) and efficient thermal path. This reflects the device's ability to sustain full current under elevated thermal conditions when properly mounted on adequate copper area, as confirmed in the Absolute Maximum Ratings table of Vishay document 62942.

Does SIRC06DP-T1-GE3 include a built-in Schottky diode, and how does it differ from the intrinsic body diode?

Yes, SIRC06DP-T1-GE3 integrates a monolithic Schottky diode (SkyFET®) between source and drain, distinct from the MOSFET's parasitic body diode. The Schottky exhibits V_SD = 0.47 V (typ.) at 5 A and t_rr = 31 ns - significantly lower forward voltage and faster recovery than the body diode, which would show ~0.9 V and >100 ns t_rr. This is explicitly documented in the Drain-Source Body Diode Characteristics section of the datasheet.

What is the gate threshold voltage range for SIRC06DP-T1-GE3, and how does it affect 4.5 V logic-level drive?

The gate threshold voltage (V_GS(th)) for SIRC06DP-T1-GE3 is specified from 1.0 V to 2.1 V, ensuring reliable turn-on with 4.5 V gate drive. At this voltage, R_DS(on) remains tightly controlled at 4.0 mΩ max, enabling full-rated current without gate boosting. This is validated in the Static Specifications table (document 62942, page 2) and supports direct interfacing with standard 4.5 V PWM controllers.

Is SIRC06DP-T1-GE3 suitable for avalanche-rated applications, and what energy level is guaranteed?

Yes, SIRC06DP-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 15 A single-pulse avalanche current (I_AS) and 11.25 mJ single-pulse avalanche energy (E_AS). These values are measured under standardized conditions (L = 0.3 mH, T_J = 25 °C) and appear in the Absolute Maximum Ratings table - confirming suitability for circuits subject to inductive load switching stress.

What is the thermal resistance from junction to case (R_thJC) for SIRC06DP-T1-GE3, and how is it measured?

The typical junction-to-case thermal resistance (R_thJC) for SIRC06DP-T1-GE3 is 1.9 °C/W, with a maximum of 2.5 °C/W, measured under steady-state conditions with heat flow directed from the die through the exposed drain paddle to the case surface. This value is specified in the Thermal Resistance Ratings table (document 62942, page 1) and is critical for calculating temperature rise when using external heatsinking or thick PCB copper layers.

SIRC06DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2455 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRC06DP-T1-GE3 FAQ

1.How can I place an order for SIRC06DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRC06DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRC06DP-T1-GE3 reliable?

The price and inventory of SIRC06DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRC06DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRC06DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRC06DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRC06DP-T1-GE3?

SIRC06DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRC06DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRC06DP-T1-GE3?

For technical support, including SIRC06DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRC06DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRC06DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRC06DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRC06DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRC06DP-T1-GE3?

All SIRC06DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRC06DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRC06DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRC06DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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