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Vishay Siliconix SIRC10DP-T1-GE3
- Part No.:
- SIRC10DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRC10DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,967
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Product details
Overview
SIRC10DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET with monolithically integrated Schottky diode in PowerPAK® SO-8 Single package. It delivers RDS(on) = 3.5 mΩ at VGS = 10 V, 5.2 mΩ at VGS = 4.5 V, total gate charge Qg = 11.2 nC (typ.), and continuous drain current ID = 60 A (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRC10DP-T1-GE3 datasheet, SIRC10DP-T1-GE3 pinout, SIRC10DP-T1-GE3 application, or SIRC10DP-T1-GE3 equivalent, this device supports critical design decisions in high-frequency buck converters where low conduction loss, fast switching, and integrated body diode recovery performance are essential.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology and SKYFET® integration to co-locate a Schottky diode with the MOSFET die in a single PowerPAK SO-8 footprint. Its gate threshold voltage VGS(th) ranges from 1.0 V to 2.4 V, enabling robust 4.5 V logic-level drive compatibility while maintaining tight RDS(on) distribution.
The device features 100 % Rg and UIS tested units, with Ciss = 1873 pF, Coss = 760 pF, and Crss = 52 pF at VDS = 15 V - parameters directly supporting low EMI and predictable turn-on/turn-off timing in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in ≤30 V input DC/DC stages. |
| RDS(on) @ 10 V | 3.5 mΩ max - Enables <180 mW conduction loss at 60 A, critical for thermal management in compact converters. |
| RDS(on) @ 4.5 V | 5.2 mΩ max - Ensures stable on-resistance under 5 V gate drive, supporting direct microcontroller interface without level-shifting. |
| Qg | 11.2 nC typ. - Low gate charge reduces driver power demand and switching energy loss at ≥500 kHz operation. |
| VSD | 0.51–0.75 V @ IS = 5 A - Schottky diode forward voltage enables faster reverse recovery than standard body diodes, cutting trr to 35–70 ns. |
| ID (continuous) | 60 A @ TC = 25 °C - High current rating supports single-device implementation in 50–100 W synchronous buck phases. |
| RthJC | 2.3 °C/W typ. - Low junction-to-case thermal resistance allows efficient heat transfer to PCB copper or heatsink in surface-mount layouts. |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; pins 1–4 are internally tied and serve as primary current return path and thermal conduction node. |
| 5 | Gate (G) | Control terminal; low Rg (0.3–1.8 Ω) ensures fast, damped switching with minimal gate ringing risk. |
| 6, 7, 8 | Drain (D) | High-current drain terminals; pins 6–8 connect to exposed copper paddle for low-inductance, high-current routing and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × area efficiency, reducing conduction loss per mm² in space-constrained power stages. |
| Monolithic Schottky diode (SKYFET®) | Eliminates external diode placement and parasitic inductance, enabling clean zero-voltage switching transitions in synchronous rectifiers. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 11.25 mJ per pulse. |
| PowerPAK SO-8 footprint | Provides 3× higher current density vs. standard SO-8, with 2.3 °C/W RthJC enabling >60 A operation without external heatsink. |
| Lead (Pb)-free and halogen-free | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU compliance requirements. |
Applications
| Server VRMs | Industrial DC/DC Modules |
|---|---|
Use Scenario: Point-of-load (POL) converter in 12 V input server motherboard delivering 1–3 V @ 60+ A to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 500–1000 kHz with precise dead-time control. Use Value: 3.5 mΩ RDS(on) minimizes I²R loss at full load, while integrated Schottky diode eliminates reverse recovery loss during light-load discontinuous conduction mode (DCM). |
Use Scenario: Isolated 48 V to 12 V intermediate bus converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology; operates with 5 V gate drive from isolated gate driver. Use Value: 5.2 mΩ RDS(on) at 4.5 V ensures stable efficiency across wide load range; 35 ns trr enables >300 kHz operation without shoot-through risk. |
| Telecom Rectifier Modules | Automotive ADAS Power Supplies |
Use Scenario: 54 V input telecom rectifier module converting to 12 V for base station radio units. IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck-boost stage; handles 60 A peak currents with high thermal cycling reliability. Use Value: 60 A continuous rating and 150 A pulsed capability support high transient loads; RthJC = 2.3 °C/W sustains operation at 70 °C case temperature with no derating. |
Use Scenario: 12 V input DC/DC converter powering radar sensor SoC in automotive ADAS ECU. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2 MHz buck regulator; requires AEC-Q101 stress qualification and -40 to +125 °C operation. Use Value: VGS(th) = 1.0–2.4 V ensures reliable turn-on across automotive temperature range; monolithic Schottky diode prevents EMI spikes during load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR108DP-T1-GE3 | RDS(on) = 2.9 mΩ @ 10 V (lower), Qg = 13.5 nC (higher), same PowerPAK SO-8 package and VDS = 30 V. | Better conduction loss but slower switching; preferred in <300 kHz applications prioritizing efficiency over frequency scaling. | Select SiR108DP-T1-GE3 when thermal margin is constrained and switching frequency is ≤300 kHz. |
| IRF7470PBF | SO-8 package, VDS = 30 V, RDS(on) = 4.5 mΩ @ 10 V, no integrated Schottky diode, higher Ciss = 2200 pF. | Requires external Schottky for synchronous rectification; higher gate charge increases driver losses above 500 kHz. | Choose IRF7470PBF only if cost sensitivity outweighs performance gain from monolithic diode integration. |
Compared with SIRC10DP-T1-GE3, SiR108DP-T1-GE3 offers lower RDS(on) at the expense of higher Qg, while IRF7470PBF lacks integrated diode functionality - making SIRC10DP-T1-GE3 the optimal balance of low-loss conduction, fast switching, and layout simplification for high-frequency synchronous rectification.
Availability
SIRC10DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom rectifier designs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.
Supply support for SIRC10DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRC10DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency synchronous rectification in next-generation DC/DC conversion systems.
FAQ
What is the maximum continuous drain current rating for SIRC10DP-T1-GE3?
The SIRC10DP-T1-GE3 has a continuous drain current rating of 60 A at case temperature TC = 25 °C, derating to 19.1 A at TC = 70 °C per absolute maximum ratings. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended PowerPAK SO-8 pad layout in Application Note 826.
Does SIRC10DP-T1-GE3 include an integrated Schottky diode, and how does it differ from the body diode?
Yes, SIRC10DP-T1-GE3 integrates a monolithic Schottky diode via SKYFET® technology - distinct from the intrinsic MOSFET body diode. It exhibits VSD = 0.51–0.75 V at 5 A and trr = 35–70 ns, offering significantly faster recovery and lower forward voltage than conventional body diodes, reducing switching losses in synchronous rectification.
What is the gate threshold voltage range for SIRC10DP-T1-GE3, and why does it matter for 5 V logic drive?
The gate threshold voltage VGS(th) for SIRC10DP-T1-GE3 is specified from 1.0 V to 2.4 V at ID = 250 μA. This ensures full enhancement at 4.5 V gate drive, enabling direct interfacing with 5 V microcontrollers or gate drivers without level-shifting, while maintaining noise immunity against false turn-on.
Can SIRC10DP-T1-GE3 be used in parallel configurations, and what design considerations apply?
Yes, SIRC10DP-T1-GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Key considerations include matched gate drive loop inductance, symmetrical PCB layout, and individual gate resistors (≥1 Ω) to damp oscillation - all validated in Vishay's synchronous buck reference designs.
What thermal resistance values define the thermal performance of SIRC10DP-T1-GE3 in PCB-mounted applications?
SIRC10DP-T1-GE3 has RthJC = 2.3 °C/W (typ.) from junction to case and RthJA = 24 °C/W (typ.) from junction to ambient on a 1" × 1" FR4 board. These values enable accurate thermal modeling: at 60 A and 3.5 mΩ, power dissipation is ~12.6 W, resulting in ~29 °C junction rise above case temperature under typical conditions.
SIRC10DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1873 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRC10DP-T1-GE3 FAQ
1.How can I place an order for SIRC10DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRC10DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRC10DP-T1-GE3 reliable?
The price and inventory of SIRC10DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRC10DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRC10DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRC10DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRC10DP-T1-GE3?
SIRC10DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRC10DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRC10DP-T1-GE3?
For technical support, including SIRC10DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRC10DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRC10DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRC10DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRC10DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRC10DP-T1-GE3?
All SIRC10DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRC10DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRC10DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRC10DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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