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Vishay Siliconix SIRC16DP-T1-RE3
- Part No.:
- SIRC16DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRC16DP-T1-RE3.pdf
- Description:
- N-CHANNEL 25-V (D-S) MOSFET W/SC
- Quantity:
- Payment:
- Shipping:
Inventory:5,880
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Product details
Overview
SIRC16DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen IV power MOSFET with monolithically integrated Schottky diode in PowerPAK® SO-8 package. It delivers RDS(on) = 0.00096 Ω at VGS = 10 V, Qg = 31.5 nC (at 4.5 V), and 60 A continuous drain current, enabling high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIRC16DP-T1-RE3 datasheet, SIRC16DP-T1-RE3 pinout, SIRC16DP-T1-RE3 application, or SIRC16DP-T1-RE3 equivalent, this device is selected for high-frequency switching topologies where low conduction loss, fast body diode recovery (trr = 46 ns), and integrated Schottky VF = 0.55 V at 10 A are critical to minimizing voltage drop and reverse recovery losses.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon architecture optimized for RDS(on)–Qg and RDS(on)–Qgd figures of merit, supporting high-frequency PWM operation in buck converters. Its SKYFET® integration places a monolithic Schottky diode between source and drain terminals, eliminating external diode placement and reducing layout parasitics.
The device operates with gate threshold voltage VGS(th) = 1–2.4 V and supports logic-level drive (4.5 V), while its body diode exhibits VSD = 0.41–0.55 V at 5 A and trr = 46–92 ns under 100 A/μs di/dt - key for minimizing shoot-through risk and improving light-load efficiency in synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in point-of-load converters |
| RDS(on) @ 10 V | 0.00096 Ω - Enables <10 mW conduction loss at 10 A, critical for thermal management in compact designs |
| RDS(on) @ 4.5 V | 0.00140 Ω - Ensures robust on-state performance with standard logic-level drivers without level-shifting |
| Qg @ 4.5 V | 31.5 nC - Low gate charge reduces driver power demand and switching transition time in >500 kHz applications |
| ID (continuous) | 60 A - Package-limited current rating suitable for high-current output stages in server VRMs and telecom PSUs |
| VF (Schottky) | 0.55 V @ 10 A - Lower forward voltage than discrete Schottky alternatives, reducing conduction loss in freewheeling path |
| trr | 46 ns - Fast body diode recovery minimizes reverse recovery energy loss during dead-time transitions |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed copper drain pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (MOSFET) | Common source connection for both MOSFET channel and integrated Schottky cathode; requires low-impedance PCB pour for thermal and current handling |
| 5 | Gate | Control terminal for MOSFET channel; low Rg = 0.5 Ω (typ.) enables stable high-speed switching with minimal ringing |
| 6, 7, 8 | Drain (MOSFET & Schottky anode) | Exposed copper thermal pad tied to internal drain; primary heat dissipation path and high-current return node |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Optimized RDS(on)–Qg FOM enables >95% efficiency in 500 kHz–1 MHz synchronous buck converters |
| Monolithic SKYFET® Schottky | Integrated 60 A Schottky diode eliminates discrete component count and layout mismatch in synchronous rectifier paths |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world loads |
| PowerPAK® SO-8 package | Thermal resistance RthJC = 1.8 °C/W (typ.) supports >50 W power dissipation with minimal heatsinking |
| Logic-level drive capability | Full enhancement at VGS = 4.5 V allows direct interface with microcontroller GPIO or PWM controller outputs |
Applications
| Server Point-of-Load Converter | Telecom DC/DC Module |
|---|---|
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU VRMs in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side synchronous buck stage, operating at 600–800 kHz. Use Value: 0.00140 Ω RDS(on) at 4.5 V ensures <15 mW conduction loss per phase at 30 A, reducing thermal load on multi-phase layouts. |
Use Scenario: Isolated 48 V → 12 V intermediate bus converter in 5G base station power supplies. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC resonant topology. Use Value: Integrated Schottky VF = 0.55 V cuts freewheeling loss by ~30% vs. standard body diode, improving full-load efficiency by 0.8–1.2%. |
| Industrial Motor Drive Inverter | Automotive ADAS Power Supply |
Use Scenario: 24 V input DC/DC stage powering gate drivers and sensors in servo motor control modules. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator supplying 5 V/3.3 V logic rails. Use Value: 25 V VDS rating accommodates 24 V nominal input with 100% margin for load dump transients up to 30 V. |
Use Scenario: Compact 12 V → 3.3 V buck converter for radar ECU and camera module power in ADAS systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-density, thermally constrained layout. Use Value: PowerPAK® SO-8 footprint enables >40 A/in² current density; trr = 46 ns prevents cross-conduction during sub-100 ns dead times. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR16DP-T1-GE3 | Same die, identical RDS(on), Qg, and thermal specs; differs only in lead finish (NiPdAu vs. matte Sn) | No functional difference; GE3 variant qualified for higher-temperature reflow profiles (peak 260 °C) | Select SiR16DP-T1-GE3 if using lead-free assembly with extended thermal budget or requiring RoHS + REACH compliance documentation |
| IRF6775MTRPBF | Higher RDS(on) = 0.0012 Ω @ 10 V, no integrated Schottky; requires external diode for synchronous rectification | Lacks monolithic Schottky, increasing BOM count and layout complexity in space-constrained designs | Choose IRF6775MTRPBF only when Schottky integration is unnecessary and lower gate charge (Qg = 25 nC) is prioritized over diode loss reduction |
Compared with SIRC16DP-T1-RE3, SiR16DP-T1-GE3 offers identical electrical performance with enhanced process control for high-reliability reflow, while IRF6775MTRPBF trades integrated diode functionality for marginally lower Qg - making SIRC16DP-T1-RE3 optimal where Schottky-assisted freewheeling and layout simplification are design priorities.
Availability
SIRC16DP-T1-RE3 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom DC/DC modules, and industrial motor drive inverters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SIRC16DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRC16DP-T1-RE3 belongs to Vishay's SKYFET® family, engineered specifically for high-frequency synchronous rectification in DC/DC conversion where integrated Schottky diodes reduce system loss and simplify board layout.
FAQ
What is the maximum continuous drain current rating for SIRC16DP-T1-RE3 at 70 °C case temperature?
The SIRC16DP-T1-RE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and validated under steady-state thermal conditions with proper PCB copper area per Vishay's recommended PowerPAK® SO-8 layout guidelines.
Does SIRC16DP-T1-RE3 include a body diode, and how does it differ from the integrated Schottky diode?
Yes, SIRC16DP-T1-RE3 has a parasitic body diode inherent to its N-channel MOSFET structure, but it also integrates a monolithic Schottky diode (SKYFET®) between source and drain. The Schottky diode provides VF = 0.55 V at 10 A and trr = 46 ns, whereas the body diode exhibits higher VSD and slower recovery - the Schottky is intended for primary freewheeling conduction.
Can SIRC16DP-T1-RE3 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
No - SIRC16DP-T1-RE3 requires minimum VGS = 4.5 V for full enhancement (RDS(on) = 0.00140 Ω). At 3.3 V, the device operates in linear region with significantly elevated RDS(on), causing excessive conduction loss and thermal stress. A level-shifting gate driver or 5 V logic interface is required for reliable switching.
What is the thermal resistance from junction to case (RthJC) for SIRC16DP-T1-RE3, and how does it impact heatsink selection?
The SIRC16DP-T1-RE3 has RthJC = 1.8 °C/W (typical), measured from junction to the exposed drain pad. This low value means >90% of heat flows vertically through the PowerPAK® SO-8 bottom pad - heatsink design must prioritize direct thermal interface to this pad, not lateral PCB conduction, to achieve rated 54.3 W power dissipation.
Is SIRC16DP-T1-RE3 suitable for automotive applications such as ADAS power supplies?
SIRC16DP-T1-RE3 meets AEC-Q101 stress test requirements per Vishay qualification reports and operates across –55 °C to +150 °C junction temperature range. Its 25 V VDS, fast Schottky recovery, and PowerPAK® SO-8 robustness make it suitable for non-safety-critical ADAS subsystems like radar and camera power rails, provided system-level transient protection is implemented.
SIRC16DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 57A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.96mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5150 pF @ 10 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 5W (Ta), 54.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRC16DP-T1-RE3 FAQ
1.How can I place an order for SIRC16DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRC16DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRC16DP-T1-RE3 reliable?
The price and inventory of SIRC16DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRC16DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIRC16DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRC16DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRC16DP-T1-RE3?
SIRC16DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRC16DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRC16DP-T1-RE3?
For technical support, including SIRC16DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRC16DP-T1-RE3 requirements.
6.How does Aetrix verify that SIRC16DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIRC16DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRC16DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIRC16DP-T1-RE3?
All SIRC16DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRC16DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRC16DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIRC16DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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