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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRS4302DP-T1-GE3

Name: SIRS4302DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRS4302DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRS4302DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRS4302DP-T1-GE3.pdf

Description:: N-CHANNEL 30 V (D-S) MOSFET POWE

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Product details

Overview

SIRS4302DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8S package, delivering R_DS(on) = 0.57 mΩ at V_GS = 10 V and 0.83 mΩ at V_GS = 4.5 V, with 518 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in server and telecom DC/DC converters.

For engineers reviewing the SIRS4302DP-T1-GE3 datasheet, SIRS4302DP-T1-GE3 pinout, SIRS4302DP-T1-GE3 application, or SIRS4302DP-T1-GE3 equivalent, key selection criteria include ultra-low R_DS(on) × Q_g figure-of-merit (FOM), 100% R_g and UIS testing, junction-to-case thermal resistance of 0.34 °C/W, and compatibility with high-current OR-ing and hot-swap switch topologies requiring robust avalanche energy handling (E_AS = 211 mJ).

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve sub-1 mΩ on-resistance with fast switching dynamics-Q_g = 73 nC (typ.) at V_GS = 4.5 V and 153 nC (typ.) at V_GS = 10 V-enabling high-frequency operation in multiphase VRMs. Its gate threshold voltage (V_GS(th) = 1.0–2.2 V) supports 4.5 V logic-level drive while maintaining tight parametric distribution across temperature (ΔV_GS(th)/T_J = −5.2 mV/°C).

The PowerPAK® SO-8S leadless package features exposed copper drain pads on the bottom side for direct thermal coupling to PCB copper, achieving R_thJC = 0.34 °C/W (typ.) and enabling >245 W power dissipation at T_C = 25 °C. The device integrates a robust body diode with t_rr = 75 ns (typ.) and Q_rr = 80 nC (typ.), critical for zero-voltage switching (ZVS) and reverse recovery management in synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V and 24 V input bus systems
R_DS(on) max @ V_GS = 10 V	0.57 mΩ - Enables <1 W conduction loss at 400 A, supporting high-current server VRM phases
R_DS(on) max @ V_GS = 4.5 V	0.83 mΩ - Ensures low-loss operation with standard 5 V gate drivers in industrial DC/DC modules
I_D continuous @ T_C = 25 °C	518 A - Supports single-device implementation in high-power OR-ing switches up to 15 kW
Q_g typ. @ V_GS = 4.5 V	73 nC - Balances switching speed and gate drive loss for 300–1000 kHz operation in LLC resonant converters
E_AS	211 mJ - Withstands single-pulse avalanche events in hot-swap applications with 0.1 mH inductive load
R_thJC max	0.51 °C/W - Allows direct heatsink mounting via PCB thermal vias for thermal management in space-constrained 1U servers

Pinout & Package

Package: PowerPAK® SO-8S - leadless, surface-mount package with exposed drain copper on bottom side; 6.00 mm × 5.00 mm footprint; 0.90 mm nominal height; 8-terminal configuration with 4 drain (D), 3 source (S), 1 gate (G) terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Low-inductance parallel source connections reduce common-source inductance and improve switching stability
5, 6, 7, 8	Drain (D)	Exposed copper drain pads on bottom side provide primary thermal path and high-current return path
Gate (G)	Control terminal	Single gate pad (terminal 4 in top view, labeled "G") enables low-impedance gate loop design for <30 ns rise/fall times

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g FOM for reduced total power loss in high-frequency switching
100 % R_g and UIS tested	Guarantees gate resistance consistency and unclamped inductive switching ruggedness per unit
Enhanced power dissipation	245 W at T_C = 25 °C enables single-MOSFET solutions in 48 V–12 V intermediate bus converters
Low R_thJC (0.34 °C/W typ.)	Minimizes junction temperature rise under full load, extending reliability in thermally dense server boards
Body diode t_rr = 75 ns (typ.)	Reduces reverse recovery losses and EMI in synchronous rectifier operation with fast di/dt

Applications

Server VRM Phase Legs	Telecom 48 V Intermediate Bus Converter
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 1000 A peak. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier MOSFET in interleaved phase legs operating at 500–1000 kHz. Use Value: Sub-0.6 mΩ R_DS(on) minimizes conduction loss; 73 nC Q_g enables efficient gate drive with integrated DrMOS controllers.	Use Scenario: 48 V to 12 V step-down conversion in telecom rectifier shelves and OCPs. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in hard-switched or ZVS-enabled forward or half-bridge topologies. Use Value: 211 mJ E_AS withstands transient overloads during hot-plug events; 0.34 °C/W R_thJC maintains <100 °C junction temp at full load.
OR-ing Controller Backplane	Battery Protection Circuit
Use Scenario: Redundant 12 V power supply backplane where multiple supplies feed a common bus. IC Role / Device Role / Timing Role: Low-loss OR-ing switch placed between supply output and shared bus, controlled by dedicated OR-ing IC. Use Value: 0.83 mΩ R_DS(on) at 4.5 V gate drive ensures <10 mV forward drop at 120 A, minimizing bus voltage sag and heat generation.	Use Scenario: High-current battery disconnect and protection in 24–48 V Li-ion packs for UPS and energy storage systems. IC Role / Device Role / Timing Role: Main power path switch for charge/discharge control and short-circuit isolation. Use Value: 600 A pulsed drain current rating and 65 A single-pulse avalanche current support fault clearing without device failure.

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 1000 A peak.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier MOSFET in interleaved phase legs operating at 500–1000 kHz.

Use Value: Sub-0.6 mΩ R_DS(on) minimizes conduction loss; 73 nC Q_g enables efficient gate drive with integrated DrMOS controllers.

Use Scenario: 48 V to 12 V step-down conversion in telecom rectifier shelves and OCPs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in hard-switched or ZVS-enabled forward or half-bridge topologies.

Use Value: 211 mJ E_AS withstands transient overloads during hot-plug events; 0.34 °C/W R_thJC maintains <100 °C junction temp at full load.

OR-ing Controller Backplane

Battery Protection Circuit

Use Scenario: Redundant 12 V power supply backplane where multiple supplies feed a common bus.

IC Role / Device Role / Timing Role: Low-loss OR-ing switch placed between supply output and shared bus, controlled by dedicated OR-ing IC.

Use Value: 0.83 mΩ R_DS(on) at 4.5 V gate drive ensures <10 mV forward drop at 120 A, minimizing bus voltage sag and heat generation.

Use Scenario: High-current battery disconnect and protection in 24–48 V Li-ion packs for UPS and energy storage systems.

IC Role / Device Role / Timing Role: Main power path switch for charge/discharge control and short-circuit isolation.

Use Value: 600 A pulsed drain current rating and 65 A single-pulse avalanche current support fault clearing without device failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 0.75 mΩ @ 4.5 V; Q_g = 50 nC; PowerPAK® 1212-8 package; lower I_D (220 A)	Lower current capability limits use to ≤300 A OR-ing or ≤150 A VRM phases	Select when board space is constrained and thermal budget allows higher R_DS(on) for reduced gate drive loss
SUD50002-30	R_DS(on) = 0.55 mΩ @ 10 V; Q_g = 120 nC; TO-252 package; R_thJC = 1.2 °C/W	Higher thermal resistance requires external heatsink; unsuitable for ultra-thin server modules	Select when through-hole assembly or legacy TO-252 layout is required and thermal derating is acceptable

Compared with IRLHS6342TRPBF and SUD50002-30, the SIRS4302DP-T1-GE3 provides superior current density (518 A in 6×5 mm), lowest R_DS(on) × Q_g FOM, and best thermal performance-making it optimal for next-gen high-power density computing and telecom infrastructure where PCB real estate and junction temperature are critical constraints.

Availability

SIRS4302DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM design, telecom intermediate bus converters, and high-current OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified Vishay manufacturing sites.

Supply support for SIRS4302DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SIRS4302DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial systems where ultra-low on-resistance and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current rating for SIRS4302DP-T1-GE3 at case temperature of 70 °C?

The SIRS4302DP-T1-GE3 supports 414 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual PCB layout, copper area, and airflow conditions in the end application. The SIRS4302DP-T1-GE3 achieves this high current capability through its PowerPAK® SO-8S package with ultra-low R_thJC of 0.34 °C/W.

Does SIRS4302DP-T1-GE3 support 4.5 V gate drive in synchronous rectifier applications?

Yes, the SIRS4302DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 0.83 mΩ (max) and Q_g = 73 nC (typ.) at V_GS = 4.5 V. Its gate threshold voltage range (1.0–2.2 V) ensures reliable turn-on with standard 5 V logic-level controllers, making the SIRS4302DP-T1-GE3 ideal for synchronous rectification in DC/DC converters where gate drive voltage is limited by controller output or level-shifting constraints.

What is the avalanche energy rating of SIRS4302DP-T1-GE3 and how is it relevant to hot-swap applications?

The SIRS4302DP-T1-GE3 has a single-pulse avalanche energy rating (E_AS) of 211 mJ, measured at L = 0.1 mH. This specification directly supports safe operation during hot-swap events where inductive energy must be absorbed without device failure. In hot-swap circuits, the SIRS4302DP-T1-GE3 uses this ruggedness to clamp voltage spikes caused by sudden load insertion, protecting downstream circuitry while maintaining system uptime.

How does the PowerPAK® SO-8S package of SIRS4302DP-T1-GE3 improve thermal performance compared to traditional SO-8?

The PowerPAK® SO-8S package of the SIRS4302DP-T1-GE3 replaces conventional leads with an exposed copper drain paddle on the bottom surface, reducing junction-to-case thermal resistance to 0.34 °C/W (typ.)-over 3× better than standard SO-8. This design allows direct thermal coupling to inner-layer or bottom-side copper planes, enabling the SIRS4302DP-T1-GE3 to dissipate 245 W at T_C = 25 °C without external heatsinks, critical for ultra-dense server and AI accelerator power delivery.

Is SIRS4302DP-T1-GE3 suitable for use in battery management systems (BMS) requiring high pulsed current capability?

Yes, the SIRS4302DP-T1-GE3 supports 600 A pulsed drain current (I_DM) and 65 A single-pulse avalanche current (I_AS), making it suitable for BMS main contactor replacement and high-current discharge switching. Its low R_DS(on) minimizes voltage drop during high-rate discharge, and its 100% UIS testing ensures consistent avalanche ruggedness across production lots-key requirements for safety-critical battery protection functions in the SIRS4302DP-T1-GE3.

SIRS4302DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Ta), 478A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.57mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 10150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.9W (Ta), 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRS4302DP-T1-GE3 FAQ

1.How can I place an order for SIRS4302DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRS4302DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRS4302DP-T1-GE3 reliable?

The price and inventory of SIRS4302DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRS4302DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRS4302DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRS4302DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRS4302DP-T1-GE3?

SIRS4302DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRS4302DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRS4302DP-T1-GE3?

For technical support, including SIRS4302DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRS4302DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRS4302DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRS4302DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRS4302DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRS4302DP-T1-GE3?

All SIRS4302DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRS4302DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRS4302DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRS4302DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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