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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRS4400DP-T1-RE3

Name: SIRS4400DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRS4400DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRS4400DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRS4400DP-T1-RE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

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Product details

Overview

SIRS4400DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8S package, delivering R_DS(on) = 0.69 mΩ at V_GS = 10 V and 0.96 mΩ at V_GS = 4.5 V, with 473 A continuous drain current at T_C = 25 °C, optimized for high-efficiency synchronous rectification in server and telecom DC/DC converters.

For engineers reviewing the SIRS4400DP-T1-RE3 datasheet, SIRS4400DP-T1-RE3 pinout, SIRS4400DP-T1-RE3 application, or SIRS4400DP-T1-RE3 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_g figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 0.3 °C/W (typical) for high-power density board designs.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench isolation to achieve leadership conduction loss and switching efficiency. Its gate charge profile-Q_g = 90 nC (typ.) at V_GS = 4.5 V and Q_gd = 18 nC-enables fast, low-loss switching in hard-switched and synchronous buck topologies.

The device integrates a robust body diode with t_rr = 65 ns (typ.), Q_rr = 100 nC (typ.), and V_SD = 0.67 V (typ.) at I_S = 10 A, supporting efficient reverse recovery in OR-ing and hot-swap applications without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 48 V intermediate bus systems.
R_DS(on) @ 10 V	0.69 mΩ max - Enables <1 W conduction loss at 40 A, critical for >95% efficiency in high-current VRMs.
R_DS(on) @ 4.5 V	0.96 mΩ max - Ensures strong enhancement-mode turn-on with standard logic-level gate drivers (e.g., TI UCC2753x).
I_D (continuous)	473 A @ T_C = 25 °C - Supports single-device implementation in 300–500 A multiphase CPU/GPU power stages.
Q_g	90 nC typ. @ 4.5 V - Low total gate charge reduces driver power loss and enables 1 MHz+ switching in compact form factors.
R_thJC	0.3 °C/W typical - Allows direct thermal coupling to heatsink or copper plane, enabling >200 W dissipation with minimal ΔT.
Body diode V_SD	0.67 V typ. @ I_S = 10 A - Minimizes forward conduction loss during dead-time conduction in synchronous rectifiers.

Pinout & Package

Package: PowerPAK® SO-8S (leadless, bottom-side thermal pad), 6.00 mm × 5.00 mm footprint, 0.90 mm nominal height. Exposed drain copper on bottom surface provides primary thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed bottom thermal pad; electrically and thermally tied to internal die drain.
G (pin 5 side, top-side marking)	Gate (G)	Single gate terminal located adjacent to drain pins; layout requires short, low-inductance gate loop to minimize oscillation.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon process	Delivers industry-leading R_DS(on) × Q_g FOM for reduced combined conduction + switching loss in high-frequency power stages.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress (E_AS = 211 mJ).
PowerPAK® SO-8S leadless package	Provides 3× lower R_thJC vs. standard SO-8, enabling >2× higher power density without added heatsinking.
Enhanced thermal dissipation	Bottom-exposed drain pad allows direct thermal interface to inner-layer copper or external heatsink, reducing junction-to-ambient resistance.
Low V_GS(th) range	1.1–2.3 V threshold supports reliable turn-on with 3.3 V or 5 V gate drivers while maintaining noise immunity in noisy environments.

Applications

Synchronous Rectification	OR-ing / Hot-Swap Switching
Use Scenario: Secondary-side switching in isolated 48 V–12 V or 12 V–1 V DC/DC converters for AI accelerators and high-end servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to eliminate forward voltage drop and reduce heat generation. Use Value: Achieves >1.5% system efficiency gain and >20 °C lower MOSFET temperature versus 3 mΩ alternatives at 300 A output.	Use Scenario: Redundant 48 V power feed control in telecom shelf systems with automatic fault isolation and seamless switchover. IC Role / Device Role / Timing Role: Low-R_DS(on) back-to-back switch enabling bidirectional current flow and fast reverse-current blocking. Use Value: Limits power loss to <0.5 W per rail at 100 A, eliminating need for active current limiting circuitry.
High-Current VRM Power Stage	Battery Management System (BMS) Protection
Use Scenario: Single-phase or paralleled phase in CPU/GPU voltage regulator modules requiring >300 A per phase with <10 mΩ total R_DS(on). IC Role / Device Role / Timing Role: Bottom-FET switch in synchronous buck converter, handling high di/dt currents with minimal voltage overshoot. Use Value: Enables 1.5 MHz operation with <50 mV switching node ringing due to low C_iss/C_rss ratio (65:1) and tight gate drive loop control.	Use Scenario: Main discharge/charge FET in 48 V lithium-ion battery packs for industrial UPS and energy storage systems. IC Role / Device Role / Timing Role: Primary current-handling switch for overcurrent and short-circuit protection, controlled by BMS ASIC. Use Value: Withstands 65 A avalanche current (I_AS) and 211 mJ single-pulse energy, allowing safe shutdown during fault events without destruction.

Synchronous Rectification

OR-ing / Hot-Swap Switching

Use Scenario: Secondary-side switching in isolated 48 V–12 V or 12 V–1 V DC/DC converters for AI accelerators and high-end servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to eliminate forward voltage drop and reduce heat generation.

Use Value: Achieves >1.5% system efficiency gain and >20 °C lower MOSFET temperature versus 3 mΩ alternatives at 300 A output.

Use Scenario: Redundant 48 V power feed control in telecom shelf systems with automatic fault isolation and seamless switchover.

IC Role / Device Role / Timing Role: Low-R_DS(on) back-to-back switch enabling bidirectional current flow and fast reverse-current blocking.

Use Value: Limits power loss to <0.5 W per rail at 100 A, eliminating need for active current limiting circuitry.

High-Current VRM Power Stage

Battery Management System (BMS) Protection

Use Scenario: Single-phase or paralleled phase in CPU/GPU voltage regulator modules requiring >300 A per phase with <10 mΩ total R_DS(on).

IC Role / Device Role / Timing Role: Bottom-FET switch in synchronous buck converter, handling high di/dt currents with minimal voltage overshoot.

Use Value: Enables 1.5 MHz operation with <50 mV switching node ringing due to low C_iss/C_rss ratio (65:1) and tight gate drive loop control.

Use Scenario: Main discharge/charge FET in 48 V lithium-ion battery packs for industrial UPS and energy storage systems.

IC Role / Device Role / Timing Role: Primary current-handling switch for overcurrent and short-circuit protection, controlled by BMS ASIC.

Use Value: Withstands 65 A avalanche current (I_AS) and 211 mJ single-pulse energy, allowing safe shutdown during fault events without destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40B216TRPBF	R_DS(on) = 0.75 mΩ @ 10 V; Q_g = 115 nC @ 4.5 V; TO-263 package (larger footprint, higher R_thJA).	Higher thermal resistance limits power density in space-constrained 1U server designs.	Preferred where legacy TO-263 layout reuse is required and thermal margin exceeds 15 °C.
SUD50002-30-GE3	R_DS(on) = 0.85 mΩ @ 10 V; Q_g = 72 nC @ 4.5 V; PowerPAK 8x8 package (6.15 mm × 6.15 mm, larger area).	Lower Q_g improves switching efficiency but larger footprint increases PCB cost and limits phase count in multiphase VRMs.	Selected when gate drive loss dominates over conduction loss and board area is not constrained.

Compared with IRL40B216TRPBF and SUD50002-30-GE3, the SIRS4400DP-T1-RE3 delivers the lowest R_DS(on) × Q_g FOM in a compact 6 mm × 5 mm footprint, making it optimal for next-generation high-frequency, high-current power stages where both thermal and layout density are critical.

Availability

SIRS4400DP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, server VRMs, and industrial battery management systems requiring stable component supply and long-term production continuity.

Supply support for SIRS4400DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIRS4400DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current rating for SIRS4400DP-T1-RE3 at 70 °C case temperature?

The SIRS4400DP-T1-RE3 supports 378 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8S package under sustained high-power operation and must be validated with actual board-level thermal design including copper area and airflow.

Does SIRS4400DP-T1-RE3 require a gate resistor for stable operation in a 1 MHz synchronous buck converter?

Yes, SIRS4400DP-T1-RE3 benefits from an external gate resistor (typically 1–3 Ω) to dampen gate ringing and control dV/dt during hard switching. Its low R_g (0.2–1.9 Ω) and high C_iss (13,730 pF) make gate loop inductance critical; improper layout without series resistance can cause shoot-through or EMI issues in 1 MHz designs.

Is SIRS4400DP-T1-RE3 suitable for use as a hot-swap controller FET in a 48 V system?

Yes, SIRS4400DP-T1-RE3 is explicitly qualified for OR-ing and hot-swap applications per its datasheet. Its 40 V V_DS, 0.96 mΩ R_DS(on) at 4.5 V, and robust UIS rating (E_AS = 211 mJ) enable reliable inrush current limiting and reverse-current blocking in 48 V distributed power architectures.

What is the thermal resistance from junction to case (R_thJC) for SIRS4400DP-T1-RE3, and how is it measured?

The SIRS4400DP-T1-RE3 has a typical R_thJC of 0.3 °C/W, measured from the silicon junction to the bottom-side drain pad under steady-state conditions. This value assumes full solder coverage of the exposed drain pad to a 1 oz. copper thermal plane and is validated per JEDEC JESD51-14 standards using transient dual-interface testing.

Can SIRS4400DP-T1-RE3 be used in parallel configurations, and what layout considerations apply?

Yes, SIRS4400DP-T1-RE3 is designed for paralleling-its low R_DS(on) tolerance (±20%) and matched threshold voltage (1.1–2.3 V) ensure balanced current sharing. Critical layout requirements include symmetrical gate drive paths, Kelvin-connected source returns, and identical thermal vias under each device's drain pad to maintain uniform junction temperature.

SIRS4400DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Ta), 440A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.69mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 295 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13730 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 7.4W (Ta), 240W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRS4400DP-T1-RE3 FAQ

1.How can I place an order for SIRS4400DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRS4400DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRS4400DP-T1-RE3 reliable?

The price and inventory of SIRS4400DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRS4400DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRS4400DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRS4400DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRS4400DP-T1-RE3?

SIRS4400DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRS4400DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRS4400DP-T1-RE3?

For technical support, including SIRS4400DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRS4400DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRS4400DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRS4400DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRS4400DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRS4400DP-T1-RE3?

All SIRS4400DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRS4400DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRS4400DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRS4400DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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