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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRS5700DP-T1-RE3

Name: SIRS5700DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRS5700DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRS5700DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRS5700DP-T1-RE3.pdf

Description:: N-CHANNEL MOSFET

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Product details

Overview

SIRS5700DP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8S package, delivering R_DS(on) = 4.6 mΩ at V_GS = 10 V, Q_g = 55 nC (typ), and continuous drain current I_D = 144 A at T_C = 25 °C - optimized for high-efficiency synchronous rectification in server and telecom DC/DC converters.

For engineers reviewing the SIRS5700DP-T1-RE3 datasheet, SIRS5700DP-T1-RE3 pinout, SIRS5700DP-T1-RE3 application, or SIRS5700DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (FOM), 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 0.3 °C/W (typ) for high-power density board designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V silicon process to achieve leadership conduction loss and switching efficiency. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 20 ns (typ) and t_d(off) = 40 ns (typ) under 10 V drive, while the integrated body diode delivers V_SD = 0.75 V (typ) at I_S = 10 A and t_rr = 95 ns (typ).

The PowerPAK® SO-8S package features exposed-drain copper pads on the bottom side for direct thermal coupling to PCB copper, enabling high steady-state power dissipation (P_D = 278 W at T_C = 25 °C) and low junction-to-case thermal resistance (R_thJC = 0.3 °C/W typ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports primary-side switching and high-bus applications up to 120 V DC input.
R_DS(on) max @ 10 V	5.6 mΩ - enables <1 W conduction loss at 15 A, critical for 48 V–54 V intermediate bus converters.
Q_g typ	55 nC - balances gate drive strength and switching loss; compatible with standard 1–2 A peak gate drivers.
I_D continuous @ T_C = 25 °C	144 A - supports high-current single-phase synchronous rectifiers without paralleling.
R_thJC max	0.45 °C/W - allows efficient heat transfer to heatsink or internal PCB copper, supporting >200 W output in compact layouts.
V_GS(th)	2–4 V - ensures robust turn-on margin with 5 V or 3.3 V logic-level gate drivers.
C_iss	5455 pF - influences Miller effect and gate drive loop stability; requires careful layout to minimize ringing.

Pinout & Package

Package: PowerPAK® SO-8S - leadless, surface-mount, thermally enhanced package with 6.00 mm × 5.00 mm footprint and exposed drain pad on bottom side for direct thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed bottom copper pad - primary thermal and power return path.
G (Pin 5 top-side marking)	Gate (G)	Single gate terminal located between drain pins; requires controlled impedance routing to suppress oscillation.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.25 Ω·nC, reducing combined conduction + switching losses.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy stress (E_AS = 68 mJ) in real-world fault conditions.
PowerPAK® SO-8S package	Provides 3× lower R_thJC vs. standard SO-8, enabling higher power density without external heatsinks.
Low V_SD body diode	V_SD = 0.75 V (typ) at 10 A reduces reverse recovery loss during hard-switched OR-ing and freewheeling.

Applications

Server VRM Synchronous Rectifier	Telecom 48 V DC/DC Converter
Use Scenario: High-current, high-frequency buck converter in AI accelerator server VRMs delivering >300 A at 0.8 V. IC Role / Device Role / Timing Role: Primary synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %. Use Value: R_DS(on) = 4.6 mΩ (typ) cuts rectifier loss by >60 % vs. comparable 5 mΩ Gen IV devices, directly improving thermal headroom.	Use Scenario: Isolated forward or phase-shifted full-bridge secondary-side converter in 48 V telecom power supply. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier operating at 200–500 kHz with tight dead-time control. Use Value: Q_g = 55 nC (typ) and fast t_r/t_f enable clean switching edge control, reducing EMI and body diode conduction time.
OR-ing Controller Backplane	Battery Protection Switch
Use Scenario: Redundant 12 V or 48 V power backplane where multiple supplies feed a common bus via ideal diode circuits. IC Role / Device Role / Timing Role: Low-V_DS forward-path switch controlled by dedicated OR-ing controller IC. Use Value: Ultra-low R_DS(on) minimizes voltage drop (<70 mV at 12 A), preserving bus regulation and reducing heat generation in confined spaces.	Use Scenario: High-side protection switch in 12–48 V Li-ion battery packs for e-mobility or UPS systems. IC Role / Device Role / Timing Role: Load switch managing inrush current and short-circuit protection via external driver and sense resistor. Use Value: 150 V V_DS rating provides 2× margin over 48 V nominal, supporting surge transients up to ±100 V without breakdown.

Server VRM Synchronous Rectifier

Telecom 48 V DC/DC Converter

Use Scenario: High-current, high-frequency buck converter in AI accelerator server VRMs delivering >300 A at 0.8 V.

IC Role / Device Role / Timing Role: Primary synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %.

Use Value: R_DS(on) = 4.6 mΩ (typ) cuts rectifier loss by >60 % vs. comparable 5 mΩ Gen IV devices, directly improving thermal headroom.

Use Scenario: Isolated forward or phase-shifted full-bridge secondary-side converter in 48 V telecom power supply.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier operating at 200–500 kHz with tight dead-time control.

Use Value: Q_g = 55 nC (typ) and fast t_r/t_f enable clean switching edge control, reducing EMI and body diode conduction time.

OR-ing Controller Backplane

Battery Protection Switch

Use Scenario: Redundant 12 V or 48 V power backplane where multiple supplies feed a common bus via ideal diode circuits.

IC Role / Device Role / Timing Role: Low-V_DS forward-path switch controlled by dedicated OR-ing controller IC.

Use Value: Ultra-low R_DS(on) minimizes voltage drop (<70 mV at 12 A), preserving bus regulation and reducing heat generation in confined spaces.

Use Scenario: High-side protection switch in 12–48 V Li-ion battery packs for e-mobility or UPS systems.

IC Role / Device Role / Timing Role: Load switch managing inrush current and short-circuit protection via external driver and sense resistor.

Use Value: 150 V V_DS rating provides 2× margin over 48 V nominal, supporting surge transients up to ±100 V without breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 5.3 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; R_thJC = 0.75 °C/W	Higher switching loss due to 2.4× larger Q_g; requires heatsink; unsuitable for ultra-thin or high-density layouts.	Choose only when legacy TO-220 mounting or higher single-pulse avalanche capability (I_AS = 120 A) is required.
IXTP150N15T	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 105 nC; TO-220AB package; R_thJC = 0.65 °C/W	Slower switching (t_d(off) > 100 ns); higher thermal resistance limits power density in compact PCBs.	Prefer for cost-sensitive industrial motor drives where switching frequency < 100 kHz and thermal mass is available.

Compared with IRF1405PBF and IXTP150N15T, the SIRS5700DP-T1-RE3 offers superior power density and efficiency in space-constrained, high-frequency DC/DC applications due to its 0.3 °C/W R_thJC, 55 nC Q_g, and PowerPAK® SO-8S thermal architecture - making it optimal for next-gen server, telecom, and battery-system designs.

Availability

SIRS5700DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIRS5700DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal performance.

The SIRS5700DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and hot-swap applications in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIRS5700DP-T1-RE3 at case temperature 70 °C?

The SIRS5700DP-T1-RE3 supports 115 A continuous drain current at T_C = 70 °C per Vishay's Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8S package and must be validated with actual PCB copper area and airflow. The SIRS5700DP-T1-RE3 datasheet specifies this value under steady-state conditions with proper heatsinking.

Does SIRS5700DP-T1-RE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SIRS5700DP-T1-RE3 is 100% UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 68 mJ with L = 0.1 mH. This capability ensures robustness during inductive load switching faults. The SIRS5700DP-T1-RE3 also supports I_AS = 37 A under the same test condition, confirming reliable operation in hard-switched topologies.

What is the gate threshold voltage range for SIRS5700DP-T1-RE3, and how does it affect drive compatibility?

The SIRS5700DP-T1-RE3 has a gate-source threshold voltage V_GS(th) of 2–4 V at I_D = 250 μA, making it fully compatible with standard 3.3 V and 5 V logic-level gate drivers. This range ensures strong turn-on margin while avoiding unintended conduction from noise. The SIRS5700DP-T1-RE3 maintains stable R_DS(on) down to V_GS = 7.5 V (6.2 mΩ max), supporting partial-gate-drive architectures.

Can SIRS5700DP-T1-RE3 be used in OR-ing applications, and what body diode parameters support this use?

Yes, the SIRS5700DP-T1-RE3 is explicitly listed for OR-ing and hot-swap applications. Its body diode exhibits V_SD = 0.75 V (typ) at I_S = 10 A and t_rr = 95 ns (typ), minimizing reverse recovery loss and forward conduction drop. These characteristics reduce cross-conduction risk and improve efficiency in redundant power systems - key advantages confirmed in the SIRS5700DP-T1-RE3 product summary.

What is the recommended soldering profile for SIRS5700DP-T1-RE3, and why is manual rework discouraged?

The SIRS5700DP-T1-RE3 requires peak reflow temperature of 260 °C per JEDEC J-STD-020, consistent with its lead-free/halogen-free construction. Manual soldering with an iron is not recommended because the PowerPAK® SO-8S is a leadless package with exposed copper terminations; inadequate thermal profiling risks voiding bottom-side solder joints or delamination. The SIRS5700DP-T1-RE3 datasheet references www.vishay.com/doc?73257 for full profile details.

SIRS5700DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 144A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5455 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRS5700DP-T1-RE3 FAQ

1.How can I place an order for SIRS5700DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRS5700DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRS5700DP-T1-RE3 reliable?

The price and inventory of SIRS5700DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRS5700DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRS5700DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRS5700DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRS5700DP-T1-RE3?

SIRS5700DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRS5700DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRS5700DP-T1-RE3?

For technical support, including SIRS5700DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRS5700DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRS5700DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRS5700DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRS5700DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRS5700DP-T1-RE3?

All SIRS5700DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRS5700DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRS5700DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRS5700DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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