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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRS700DP-T1-RE3

Name: SIRS700DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRS700DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRS700DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRS700DP-T1-RE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET POW

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Product details

Overview

SIRS700DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8S package, delivering R_DS(on) = 3.5 mΩ at V_GS = 10 V, Q_g = 86 nC, and 127 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIRS700DP-T1-RE3 datasheet, SIRS700DP-T1-RE3 pinout, SIRS700DP-T1-RE3 application, or SIRS700DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance with R_thJC = 0.73 °C/W (typical) for high-power-density board designs.

Technical Context

This MOSFET employs a trench-gate silicon structure enabling ultra-low on-resistance and fast switching dynamics. Its gate charge profile supports efficient hard-switching operation with t_d(on) = 20 ns and t_f = 12 ns under 10 A load conditions, while the integrated body diode exhibits t_rr = 65 ns and Q_rr = 110 nC at 10 A, supporting ZVS-capable topologies.

The device operates across -55 °C to +150 °C junction temperature range and features ±20 V gate-source voltage rating. It is fully characterized for avalanche energy (E_AS = 125 mJ) and rated for 350 A pulsed drain current, making it suitable for transient-heavy industrial and automotive power stages where robustness is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal systems with ≥2× safety margin for surge handling
R_DS(on) max @ 10 V	3.5 mΩ - enables <1 W conduction loss at 17 A, critical for high-current synchronous rectifiers
Q_g typ.	86 nC - balances switching speed and gate drive power in 100–500 kHz DC/DC applications
I_D cont. @ T_C = 25 °C	127 A - allows single-device implementation in high-current OR-ing and hot-swap circuits
R_thJC max.	0.95 °C/W - enables direct heatsink mounting for thermal management in compact power modules
E_AS	125 mJ - sustains repetitive inductive switching stress without degradation in motor drive or converter primary switches
V_GS(th)	2–4 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PowerPAK® SO-8S - leadless, bottom-terminated surface-mount package with exposed copper drain pads for enhanced thermal conduction and power density. Dimensions: 6.00 mm × 5.00 mm × 0.90 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; multiple pins reduce parasitic inductance and improve current sharing in high-di/dt paths
5, 6, 7, 8	Drain (D)	Exposed copper drain pad; primary thermal path to PCB ground plane and heatsink interface
G (Pin 4 side marker)	Gate (G)	Single gate terminal located adjacent to source; optimized layout minimizes gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g FOM for reduced total power loss in high-frequency switching
100 % R_g and UIS tested	Ensures gate robustness and unclamped inductive switching survivability per JEDEC JESD22-A115
Enhanced power dissipation	R_thJC = 0.73 °C/W (typ.) enables >100 W continuous operation with minimal heatsinking
Low V_SD body diode	0.71 V forward drop at 10 A reduces reverse recovery losses in synchronous rectifier mode
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switch in isolated 48 V–12 V LLC resonant DC/DC converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 95 %. Use Value: 3.5 mΩ R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.	Use Scenario: High-side switch in 400 V input buck-boost PFC stage for telecom rectifiers. IC Role / Device Role / Timing Role: Fast-switching primary switch operating at 100–200 kHz with controlled dV/dt to reduce EMI. Use Value: 86 nC Q_g and 12 ns fall time enable low gate drive loss and tight dead-time control for ZVS transition.
OR-ing and Hot Swap	Battery Management System
Use Scenario: Back-to-back configuration in redundant 28 V avionics power distribution units. IC Role / Device Role / Timing Role: Bidirectional OR-ing switch with fast fault isolation (<100 ns overcurrent response). Use Value: 127 A continuous rating and 350 A pulsed capability support MIL-STD-704A surge immunity without derating.	Use Scenario: Cell-balancing and protection switch in 16-cell Li-ion battery packs for EV charging infrastructure. IC Role / Device Role / Timing Role: High-current discharge path switch with integrated body diode for passive balancing current routing. Use Value: 125 mJ E_AS withstands cell reversal events; 0.71 V V_SD enables low-loss passive balancing at 5 A.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switch in isolated 48 V–12 V LLC resonant DC/DC converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 95 %.

Use Value: 3.5 mΩ R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky, directly increasing full-load efficiency by 0.8–1.2 %.

Use Scenario: High-side switch in 400 V input buck-boost PFC stage for telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-switching primary switch operating at 100–200 kHz with controlled dV/dt to reduce EMI.

Use Value: 86 nC Q_g and 12 ns fall time enable low gate drive loss and tight dead-time control for ZVS transition.

OR-ing and Hot Swap

Battery Management System

Use Scenario: Back-to-back configuration in redundant 28 V avionics power distribution units.

IC Role / Device Role / Timing Role: Bidirectional OR-ing switch with fast fault isolation (<100 ns overcurrent response).

Use Value: 127 A continuous rating and 350 A pulsed capability support MIL-STD-704A surge immunity without derating.

Use Scenario: Cell-balancing and protection switch in 16-cell Li-ion battery packs for EV charging infrastructure.

IC Role / Device Role / Timing Role: High-current discharge path switch with integrated body diode for passive balancing current routing.

Use Value: 125 mJ E_AS withstands cell reversal events; 0.71 V V_SD enables low-loss passive balancing at 5 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 120 nC; TO-220 package	Higher conduction loss and slower switching; requires heatsink mounting	Preferred where through-hole assembly or legacy footprint compatibility is required
SUP70100E-3	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 95 nC; PowerPAK 8x8 package	Lower R_DS(on) but larger footprint and higher gate charge; 2× thermal resistance	Selected when maximum current density is prioritized over board area and switching frequency

Compared with IRF1407PBF and SUP70100E-3, the SIRS700DP-T1-RE3 offers best-in-class R_DS(on) × Q_g FOM in a compact leadless package, enabling higher power density and efficiency in space-constrained 100–500 kHz DC/DC and OR-ing designs without sacrificing ruggedness.

Availability

SIRS700DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom power systems.

Supply support for SIRS700DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIRS700DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial power supplies where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIRS700DP-T1-RE3 at case temperature of 70 °C?

The SIRS700DP-T1-RE3 supports 102 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and assumes proper PCB copper area and thermal vias per Vishay's recommended land pattern (doc. 63161). The SIRS700DP-T1-RE3 maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does SIRS700DP-T1-RE3 have a qualified avalanche rating, and what is its value?

Yes, the SIRS700DP-T1-RE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 125 mJ at T_J = 25 °C, measured with L = 0.1 mH. This value is guaranteed by 100 % production testing per JEDEC JESD22-A115. The SIRS700DP-T1-RE3 also supports 50 A single-pulse avalanche current (I_AS), confirming its suitability for inductive load switching in motor drives and DC/DC converter primary stages.

What is the gate threshold voltage range for SIRS700DP-T1-RE3, and how does it affect drive compatibility?

The gate-source threshold voltage (V_GS(th)) for SIRS700DP-T1-RE3 is specified from 2 V to 4 V at I_D = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. This range provides margin against noise-induced false triggering while enabling full enhancement at V_GS ≥ 7.5 V, where R_DS(on) drops to 4.3 mΩ. The SIRS700DP-T1-RE3 thus supports both low-voltage microcontroller outputs and dedicated gate drivers without level-shifting circuitry.

How does the PowerPAK SO-8S package of SIRS700DP-T1-RE3 improve thermal performance compared to traditional SO-8?

The PowerPAK SO-8S package used by SIRS700DP-T1-RE3 features an exposed copper drain pad on the bottom surface, reducing junction-to-case thermal resistance to 0.73 °C/W (typical) - approximately 5× lower than standard SO-8. This design routes >90 % of heat directly into the PCB ground plane via soldered thermal vias, enabling higher power dissipation (132 W at T_C = 25 °C) without external heatsinks. The SIRS700DP-T1-RE3 leverages this for compact, fanless power module designs.

Is SIRS700DP-T1-RE3 suitable for synchronous rectification in high-frequency LLC converters, and why?

Yes, the SIRS700DP-T1-RE3 is explicitly validated for synchronous rectification in high-frequency LLC converters. Its 86 nC total gate charge, 12 ns fall time, and low 27 pF reverse transfer capacitance (C_rss) minimize switching losses and cross-conduction risk. Combined with its 0.71 V body diode forward voltage and 65 ns reverse recovery time, the SIRS700DP-T1-RE3 enables >96 % efficiency at 300 kHz in 48 V–12 V server PSU designs, as confirmed in Vishay application note AN958.

SIRS700DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 127A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5950 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 7.4W (Ta),132W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRS700DP-T1-RE3 FAQ

1.How can I place an order for SIRS700DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRS700DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRS700DP-T1-RE3 reliable?

The price and inventory of SIRS700DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRS700DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRS700DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRS700DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRS700DP-T1-RE3?

SIRS700DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRS700DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRS700DP-T1-RE3?

For technical support, including SIRS700DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRS700DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRS700DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRS700DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRS700DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRS700DP-T1-RE3?

All SIRS700DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRS700DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRS700DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRS700DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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