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Vishay Siliconix SIS106DN-T1-GE3
- Part No.:
- SIS106DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS106DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 9.8A/16A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,003
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Product details
Overview
SIS106DN-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0185 Ω at VGS = 10 V, Qg = 6.9 nC (typ.), and 16 A continuous drain current at TC = 25 °C - optimized for high-efficiency primary-side switching in DC/DC converters and synchronous rectification.
For engineers reviewing the SIS106DN-T1-GE3 datasheet, SIS106DN-T1-GE3 pinout, SIS106DN-T1-GE3 application, or SIS106DN-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qoss figure of merit, 100 % Rg and UIS testing, and leadless PowerPAK 1212-8 thermal performance with RthJC = 4.2 °C/W (typ.).
Technical Context
This MOSFET employs a trench-based silicon structure tuned for minimal conduction and switching loss trade-off, with gate charge characteristics supporting high-frequency operation up to 1 MHz. Its body diode exhibits trr = 38 ns (typ.) and Qrr = 23 nC (typ.) at IF = 4 A, enabling efficient hard-switched and synchronous rectifier topologies.
The device operates across –55 °C to +150 °C junction temperature range, with VGS(th) = 2–4 V and ΔVGS(th)/TJ = –7.1 mV/°C, ensuring stable turn-on behavior under thermal variation. It is rated for ±20 V gate-source voltage and supports pulsed drain currents up to 40 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for primary-side switch applications in 48 V input systems |
| RDS(on) max @ VGS = 10 V | 0.0185 Ω - enables <1.2 W conduction loss at 8 A, critical for thermally constrained PCB layouts |
| Qg typ. | 6.9 nC - reduces gate drive power and enables fast switching with low-side gate drivers like Si823x |
| ID continuous @ TC = 25 °C | 16 A - supports high-current DC/DC stages without external heatsinking in compact power modules |
| RthJC max | 5.2 °C/W - allows direct thermal coupling to copper planes or small heatsinks for >20 W dissipation |
| VGS(th) | 2–4 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| EAS | 7.2 mJ - provides robustness against inductive switching transients in motor drive and boost converter flyback phases |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount, thermally enhanced 3.3 mm × 3.3 mm footprint with exposed drain paddle on bottom side for low RthJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to exposed copper paddle - primary thermal path to PCB ground plane |
| 4 (center top) | Gate (G) | Single gate terminal located centrally for symmetric gate loop inlay and minimized gate ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Optimized cell pitch and trench depth deliver lowest RDS(on)–Qoss FOM among 60 V discrete MOSFETs in 1212 footprint |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed |
| 100 % UIS tested | Validates ruggedness under unclamped inductive switching stress - critical for motor drive and boost converter reliability |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile for leadless packages |
| Exposed drain paddle | Enables direct thermal interface to inner-layer copper pours - achieves RthJA = 31 °C/W on 1" × 1" FR4 board |
Applications
| Primary Side Switch | Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency isolated DC/DC converter in telecom power supplies with 36–75 V input range. IC Role / Device Role: Primary-side power switch in forward or active-clamp forward topology operating at 200–500 kHz. Use Value: Low Qg and RDS(on) minimize combined switching and conduction losses, enabling >95 % efficiency at full load. |
Use Scenario: Secondary-side rectification in LLC resonant converters for server VRMs and AI accelerators. IC Role / Device Role: Synchronous rectifier replacing Schottky diodes in 12 V output stage with gate-driven by transformer-coupled signal. Use Value: VSD = 0.85 V (typ.) at 4 A reduces forward drop by >40 % vs. 0.5 A Schottky, cutting rectifier loss by ~1.2 W per phase. |
| Motor Drive Switch | LED Backlighting |
|
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor control for industrial automation actuators. IC Role / Device Role: High-side N-channel MOSFET driven via bootstrap gate driver in 3-phase inverter stage. Use Value: 12 A avalanche rating (IAS) and 7.2 mJ EAS withstand motor phase commutation energy without snubbers. |
Use Scenario: PWM dimming switch in automotive LED headlamp modules with 48 V architecture. IC Role / Device Role: Series current-control switch modulating LED string current at 1–20 kHz. Use Value: Fast tf = 5 ns (typ.) and low Coss = 150 pF enable clean PWM edges with <1 % duty-cycle jitter at 10 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ 10 V; Qg = 12.5 nC; SO-8 package; higher RthJA = 62 °C/W | Lower switching speed limits use in >300 kHz converters; less suitable for thermally dense LED drivers | Prefer when legacy SO-8 layout compatibility is required and thermal margin exceeds 10 °C |
| DMN6070LSD-13 | RDS(on) = 0.019 Ω @ 10 V; Qg = 10.2 nC; PowerDI 5060 package; RthJC = 6.5 °C/W | Higher gate charge increases driver loss; larger footprint reduces board density in multi-phase designs | Choose when cost sensitivity outweighs 15 % gate drive power penalty and thermal performance is secondary |
Compared with IRF7470PBF and DMN6070LSD-13, the SIS106DN-T1-GE3 delivers superior RDS(on)–Qg balance and lower thermal resistance, making it optimal for space-constrained, high-frequency, and high-reliability power stages where efficiency and thermal headroom are design-critical.
Availability
SIS106DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drives, LED backlighting, and synchronous rectification requiring stable component supply and long-term production continuity.
Supply support for SIS106DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS106DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-density power conversion in telecom, computing, and automotive subsystems.
FAQ
What is the maximum continuous drain current rating for SIS106DN-T1-GE3 at 70 °C case temperature?
The SIS106DN-T1-GE3 supports 16 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal resistance and is validated under steady-state conditions with proper PCB copper area per Vishay Application Note 826.
Does SIS106DN-T1-GE3 require a gate resistor for stable switching in a 300 kHz DC/DC converter?
Yes - while the SIS106DN-T1-GE3 has low intrinsic gate resistance (Rg = 0.3–2.6 Ω), a 5–10 Ω external gate resistor is recommended to dampen ringing and control dV/dt during turn-on/turn-off in 300 kHz operation. The device's 6.9 nC Qg makes it responsive to moderate gate drive strength without excessive overshoot.
Can SIS106DN-T1-GE3 be used as a replacement for Si7157DP in a synchronous buck converter?
No - the Si7157DP is a dual N+P-channel 30 V MOSFET in PowerPAK SO-8, whereas the SIS106DN-T1-GE3 is a single 60 V N-channel device in PowerPAK 1212-8. They differ in voltage rating, channel count, package, and pinout; no functional or pin-compatible substitution is supported.
What is the typical reverse recovery charge (Qrr) of the body diode in SIS106DN-T1-GE3?
The SIS106DN-T1-GE3 body diode has Qrr = 23 nC (typ.) at IF = 4 A, di/dt = 100 A/μs, and TJ = 25 °C. This value is confirmed in the "Drain-Source Body Diode Characteristics" section and directly impacts commutation loss in synchronous rectifier and half-bridge configurations.
Is SIS106DN-T1-GE3 suitable for automotive AEC-Q101 qualification?
No - the SIS106DN-T1-GE3 is not AEC-Q101 qualified. Vishay offers AEC-Q101 variants under different part numbers (e.g., SQ-series). The SIS106DN-T1-GE3 is intended for industrial, computing, and telecom applications where extended temperature operation (–55 °C to +150 °C) is required but automotive qualification is not mandated.
SIS106DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.8A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 24W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS106DN-T1-GE3 FAQ
1.How can I place an order for SIS106DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS106DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS106DN-T1-GE3 reliable?
The price and inventory of SIS106DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS106DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS106DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS106DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS106DN-T1-GE3?
SIS106DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS106DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS106DN-T1-GE3?
For technical support, including SIS106DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS106DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS106DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS106DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS106DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS106DN-T1-GE3?
All SIS106DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS106DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS106DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS106DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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