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Vishay Siliconix SIS108DN-T1-GE3
- Part No.:
- SIS108DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS108DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 6.7A/16A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
SIS108DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET optimized for high-efficiency primary-side switching in DC/DC converters and motor drive circuits, with RDS(on) = 0.034 Ω at VGS = 10 V, Qg = 7.1 nC, and 100% Rg and UIS tested.
For engineers reviewing the SIS108DN-T1-GE3 datasheet, SIS108DN-T1-GE3 pinout, SIS108DN-T1-GE3 application, or SIS108DN-T1-GE3 equivalent, this device supports design of compact, thermally efficient power stages in LED backlighting, boost converters, and industrial motor control where low gate charge and low RDS(on) × Qoss figure-of-merit are critical.
Technical Context
This MOSFET uses TrenchFET® Gen IV process technology to achieve a balanced trade-off between conduction loss and switching loss, with a typical RDS(on) of 0.028 Ω at VGS = 10 V and ID = 4 A, and a low Qgd/Qg ratio of ~0.18 enabling fast, controllable turn-off in hard-switched topologies.
It features a robust body diode with trr = 30 ns (typ.) and Qrr = 25 nC (typ.) at IF = 4 A, di/dt = 100 A/μs, and TJ = 25 °C, supporting synchronous rectification and freewheeling operation in buck-derived converters without excessive voltage overshoot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage; suitable for 48 V input systems and 60 V bus applications with margin. |
| RDS(on) max @ VGS = 10 V | 0.034 Ω - Low conduction loss at full gate drive; enables ≤ 0.54 W I²R loss at 4 A continuous current. |
| Qg typ. | 7.1 nC - Low total gate charge reduces driver power and switching transition time in high-frequency PWM stages. |
| ID continuous @ TC = 25 °C | 16 A - Rated current under heatsink-cooled conditions; supports high-current primary switch designs. |
| RthJC max. | 5.2 °C/W - Low junction-to-case thermal resistance enables effective heat transfer to PCB copper or external heatsink. |
| VGS(th) | 2–4 V - Gate threshold compatible with standard 3.3 V and 5 V logic-level drivers without level-shifting. |
| Ciss | 545 pF - Input capacitance impacts gate drive loop stability and Miller effect; value supports <1 MHz switching with moderate gate resistance. |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm, leadless, exposed drain pad on bottom).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large internal copper paddle; primary thermal path to PCB via exposed bottom pad. |
| 4 (top side) | Gate (G) | Single gate terminal located adjacent to source; minimizes gate loop inductance when routed with Kelvin source connection. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS(on) × Qoss FOM among 80 V discrete MOSFETs in PowerPAK 1212-8, reducing combined conduction and switching losses. |
| 100% Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress-critical for motor drive reliability. |
| Low Qgd/Qg ratio (~0.18) | Reduces Miller plateau duration and improves controllability during turn-off, minimizing risk of shoot-through in half-bridge configurations. |
| Optimized body diode (trr = 30 ns, Qrr = 25 nC) | Enables clean freewheeling in non-synchronous buck or flyback topologies without excessive voltage spikes or ringing. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; suitable for automotive and industrial end equipment requiring green compliance. |
Applications
| Primary Side Switch | DC/DC Converter |
|---|---|
Use Scenario: High-voltage primary-side switch in isolated flyback or forward converters operating from 24–48 V input rails. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to transformer primary winding during PWM on-time. Use Value: Low RDS(on) and low Qg minimize conduction and switching losses, improving efficiency above 90% at 500 kHz. |
Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck or boost converters for industrial power supplies. IC Role / Device Role / Timing Role: Power transistor regulating output voltage by modulating duty cycle in fixed-frequency PWM control. Use Value: Fast body diode recovery and low Coss reduce reverse recovery losses and EMI in high-frequency (>300 kHz) operation. |
| Motor Drive Switch | LED Backlighting |
Use Scenario: Half-bridge high-side or low-side switch driving brushed DC or stepper motor windings in HVAC actuators or robotics. IC Role / Device Role / Timing Role: Current-controlled switching element handling pulsed load currents up to 16 A peak. Use Value: 100% UIS testing ensures survivability during inductive kickback events; RthJC = 4.2 °C/W supports thermal management without oversized heatsinks. |
Use Scenario: Boost converter switch supplying constant current to LED strings in automotive instrument clusters or commercial signage. IC Role / Device Role / Timing Role: High-efficiency switching element in boost topology delivering regulated current to series-connected LEDs. Use Value: Low RDS(on) × Qoss FOM maintains >92% efficiency across dimming range while minimizing thermal rise on compact PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7480TRPBF | RDS(on) = 0.038 Ω @ 10 V; Qg = 10.2 nC; TO-252 package; higher RthJA (62 °C/W). | Larger footprint and higher thermal resistance limit use in space-constrained, high-power-density designs. | Prefer SIS108DN-T1-GE3 for PCB area-sensitive applications requiring lower gate charge and better thermal performance. |
| DMN6016LFG-7 | RDS(on) = 0.032 Ω @ 10 V; Qg = 11.5 nC; 2×2 mm WDFN; lower current rating (12 A). | Smaller package but reduced current capability and higher Qg increase driver losses and limit peak power handling. | Choose SIS108DN-T1-GE3 when 16 A continuous current and 7.1 nC gate charge are required for stable high-load operation. |
Compared with IRF7480TRPBF and DMN6016LFG-7, the SIS108DN-T1-GE3 delivers superior RDS(on) × Qoss FOM in a thermally efficient 3.3 mm × 3.3 mm leadless package, making it optimal for high-frequency, high-current primary-side switching where layout area and thermal headroom are constrained.
Availability
SIS108DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converter design, motor drive implementation, and LED backlighting systems requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for SIS108DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics engineered for reliability and efficiency in demanding power applications.
The SIS108DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, designed specifically for high-frequency, high-efficiency switching in industrial, computing, and automotive power conversion systems.
FAQ
What is the maximum continuous drain current rating for SIS108DN-T1-GE3 at TC = 25 °C?
The SIS108DN-T1-GE3 has a maximum continuous drain current (ID) rating of 16 A when case temperature is maintained at 25 °C, as specified in the Absolute Maximum Ratings table. This rating assumes adequate heatsinking and is validated per the test conditions defined in Vishay document 77338.
Does SIS108DN-T1-GE3 support logic-level gate drive?
Yes, the SIS108DN-T1-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V, making it compatible with standard 3.3 V and 5 V logic-level gate drivers without requiring external level-shifting circuitry. Its RDS(on) remains low (0.044 Ω max at VGS = 7.5 V), ensuring strong conduction under partial gate drive.
What is the thermal resistance from junction to case (RthJC) for SIS108DN-T1-GE3?
The SIS108DN-T1-GE3 has a maximum junction-to-case thermal resistance (RthJC) of 5.2 °C/W, with a typical value of 4.2 °C/W. This low value reflects the efficient thermal path from die to the exposed drain pad in the PowerPAK 1212-8 package, enabling direct PCB copper thermal spreading.
Is SIS108DN-T1-GE3 suitable for avalanche energy handling in inductive switching?
Yes, the SIS108DN-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 7.2 mJ and single-pulse avalanche current (IAS) of 12 A with L = 0.1 mH. These ratings-combined with 100% UIS testing-confirm its robustness in unclamped inductive switching scenarios common in motor drive and relay-driving applications.
What is the gate-to-source leakage current specification for SIS108DN-T1-GE3?
The gate-to-source leakage current (IGSS) for SIS108DN-T1-GE3 is specified as ≤ 100 nA at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive current requirements and stable biasing in high-impedance gate networks.
SIS108DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 545 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 24W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS108DN-T1-GE3 FAQ
1.How can I place an order for SIS108DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS108DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS108DN-T1-GE3 reliable?
The price and inventory of SIS108DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS108DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS108DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS108DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS108DN-T1-GE3?
SIS108DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS108DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS108DN-T1-GE3?
For technical support, including SIS108DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS108DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS108DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS108DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS108DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS108DN-T1-GE3?
All SIS108DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS108DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS108DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS108DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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