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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS126DN-T1-GE3

Name: SIS126DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS126DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS126DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS126DN-T1-GE3.pdf

Description:: MOSFET N-CH 80V 12A/45.1A PPAK

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Product details

Overview

SIS126DN-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.0102 Ω @ V_GS = 10 V, Q_g = 16 nC typ., and 45.1 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIS126DN-T1-GE3 datasheet, SIS126DN-T1-GE3 pinout, SIS126DN-T1-GE3 application, or SIS126DN-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJC = 1.9 °C/W), body diode characteristics (V_SD = 0.78 V @ I_S = 5 A), and validated alternative part guidance for industrial power design.

Technical Context

This MOSFET employs a trench-based silicon structure tuned for minimal R_DS(on) × Q_oss figure-of-merit, enabling fast switching with low gate charge (Q_g = 16 nC typ. @ V_GS = 7.5 V) and low output capacitance (C_oss = 176 pF @ V_DS = 40 V). Its gate threshold voltage (V_GS(th) = 2–3.5 V) supports standard logic-level drive.

It features 100 % R_g and UIS testing, operates across –55 to +150 °C junction temperature range, and integrates a robust intrinsic body diode with t_rr = 36 ns typ. and Q_rr = 43 nC typ. at I_F = 10 A and dI/dt = 100 A/μs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - maximum drain-source blocking voltage for primary-side switch operation in 48 V input DC/DC systems
R_DS(on) max	0.0102 Ω @ V_GS = 10 V - enables <1 W conduction loss at 10 A, critical for high-current synchronous rectifiers
I_D continuous	45.1 A @ T_C = 25 °C - supports high-power motor drive and load switch applications with external heatsinking
Q_g typ.	16 nC @ V_GS = 7.5 V - reduces gate driver power demand and switching losses in 100–500 kHz SMPS designs
R_thJC max	2.4 °C/W - allows direct thermal path to PCB copper or heatsink, supporting >30 W steady-state dissipation
V_GS(th)	2–3.5 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting
t_rr	36 ns typ. - minimizes reverse recovery losses during hard-switched freewheeling in buck or half-bridge topologies

Pinout & Package

PowerPAK® 1212-8 single-die leadless package (3.3 mm × 3.3 mm × 1.04 mm), with exposed drain pad on bottom side for thermal and electrical connection. Top-side marking includes "S126" and date code.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four drain terminals connected to large bottom-side copper pad - primary thermal and power return path
4	Gate (G)	Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
TrenchFET® Gen IV architecture	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency converters
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
Low V_SD body diode	V_SD = 0.78 V typ. @ I_S = 5 A enables efficient freewheeling without external Schottky diode in synchronous buck stages
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912) for industrial and automotive supply chains
PowerPAK 1212-8 footprint	Enables compact layout with 3.3 mm × 3.3 mm area - 60 % smaller than SO-8 while delivering >2× current capability

Applications

Synchronous Rectifier	Primary-Side Switch
Use Scenario: Secondary-side switch in isolated 12 V/48 V output DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency above 10 A. Use Value: Achieves >0.5 % full-load efficiency gain vs. 40 V Schottky due to R_DS(on) × I² losses being lower than V_F × I at high currents.	Use Scenario: High-side switch in non-isolated buck converter powering FPGA core voltage (0.8–1.2 V @ up to 40 A). IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with gate drive supplied by integrated controller. Use Value: Q_g = 16 nC and low C_iss = 1402 pF enable clean 5 ns rise/fall times and minimal shoot-through risk in high-frequency PWM control.
Motor Drive H-Bridge	Battery Protection Load Switch
Use Scenario: Low-side switch in 24 V brushed DC motor driver for industrial automation actuators. IC Role / Device Role / Timing Role: PWM-controlled current path with bidirectional body diode conduction during flyback. Use Value: t_rr = 36 ns and Q_rr = 43 nC minimize switching loss and EMI during rapid direction reversal.	Use Scenario: In-line load switch between Li-ion battery pack (max 36 V) and system main board in portable test equipment. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical fuse or relay, controlled by MCU GPIO. Use Value: 80 V V_DS rating provides 2× margin over 36 V nominal battery, and R_DS(on) = 10.2 mΩ limits voltage drop to <450 mV @ 45 A.

Synchronous Rectifier

Primary-Side Switch

Use Scenario: Secondary-side switch in isolated 12 V/48 V output DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency above 10 A.

Use Value: Achieves >0.5 % full-load efficiency gain vs. 40 V Schottky due to R_DS(on) × I² losses being lower than V_F × I at high currents.

Use Scenario: High-side switch in non-isolated buck converter powering FPGA core voltage (0.8–1.2 V @ up to 40 A).

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with gate drive supplied by integrated controller.

Use Value: Q_g = 16 nC and low C_iss = 1402 pF enable clean 5 ns rise/fall times and minimal shoot-through risk in high-frequency PWM control.

Motor Drive H-Bridge

Battery Protection Load Switch

Use Scenario: Low-side switch in 24 V brushed DC motor driver for industrial automation actuators.

IC Role / Device Role / Timing Role: PWM-controlled current path with bidirectional body diode conduction during flyback.

Use Value: t_rr = 36 ns and Q_rr = 43 nC minimize switching loss and EMI during rapid direction reversal.

Use Scenario: In-line load switch between Li-ion battery pack (max 36 V) and system main board in portable test equipment.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical fuse or relay, controlled by MCU GPIO.

Use Value: 80 V V_DS rating provides 2× margin over 36 V nominal battery, and R_DS(on) = 10.2 mΩ limits voltage drop to <450 mV @ 45 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 0.0075 Ω @ 10 V but higher Q_g = 22 nC; TO-220AB package (larger footprint, higher R_thJA)	Preferred where PCB space allows and heatsink mounting is feasible; less suitable for ultra-compact DC/DC modules	Select when thermal mass > electrical performance is prioritized and manual soldering is acceptable
SUP60090E-3	R_DS(on) = 0.009 Ω @ 10 V, Q_g = 18 nC, same PowerPAK 1212-8 package but rated only to 60 V V_DS	Valid for ≤48 V bus applications only; not suitable for 80 V primary-side or 72 V battery systems	Choose for cost-sensitive 48 V systems where 60 V rating suffices and identical layout reuse is required

Compared with IRL8721PBF and SUP60090E-3, the SIS126DN-T1-GE3 uniquely balances 80 V rating, 16 nC gate charge, and 3.3 mm × 3.3 mm footprint - making it optimal for space-constrained, high-efficiency 48–72 V industrial DC/DC and motor drive designs requiring both voltage headroom and fast switching.

Availability

SIS126DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and battery protection load switching requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SIS126DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SIS126DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion in industrial, computing, and telecom infrastructure where low R_DS(on) × Q_g and robust body diode behavior are critical.

FAQ

What is the maximum continuous drain current rating for SIS126DN-T1-GE3 at 70 °C case temperature?

The SIS126DN-T1-GE3 supports 36.1 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient temperature. The SIS126DN-T1-GE3 datasheet specifies this value under steady-state conditions with proper thermal management.

Does SIS126DN-T1-GE3 require a gate resistor for stable operation in a 300 kHz buck converter?

Yes - while the SIS126DN-T1-GE3 has low gate resistance (R_g = 0.2–1.4 Ω), a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. The SIS126DN-T1-GE3's Q_g = 16 nC and fast t_r/t_f (6–12 ns) make external gate resistance essential for EMI control and driver IC protection in 300 kHz operation.

Can SIS126DN-T1-GE3 be used in place of a Schottky diode for synchronous rectification in a 48 V to 12 V LLC resonant converter?

Yes - the SIS126DN-T1-GE3 is explicitly qualified for synchronous rectification, with V_SD = 0.78 V typ. and t_rr = 36 ns enabling efficient body-diode conduction during dead-time. Its 80 V V_DS rating provides sufficient margin for 48 V bus transients, and R_DS(on) = 0.0102 Ω yields lower conduction loss than typical 45 V Schottky diodes above ~8 A. The SIS126DN-T1-GE3 must be actively driven with precise timing to avoid shoot-through.

What is the thermal resistance from junction to ambient (R_thJA) for SIS126DN-T1-GE3 on a standard 1" × 1" FR4 board?

Per the datasheet note b, the SIS126DN-T1-GE3 exhibits R_thJA = 24 °C/W (typical) and 33 °C/W (maximum) when surface mounted on a 1" × 1" FR4 board with 1 oz copper. This value assumes no additional heatsinking; adding internal copper planes or thermal vias can reduce R_thJA by 30–50 %. The SIS126DN-T1-GE3's R_thJC = 1.9 °C/W remains unchanged regardless of PCB layout.

Is SIS126DN-T1-GE3 suitable for automotive under-hood applications?

No - although the SIS126DN-T1-GE3 operates from –55 to +150 °C, it is not AEC-Q101 qualified and lacks automotive-specific reliability testing (e.g., HTOL, UHAST, ESD). Vishay offers AEC-Q101 variants like SQJQ480E for under-hood use; the SIS126DN-T1-GE3 is intended for industrial, computing, and telecom applications where extended temperature range alone does not satisfy automotive qualification requirements.

SIS126DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 45.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1402 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS126DN-T1-GE3 FAQ

1.How can I place an order for SIS126DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS126DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS126DN-T1-GE3 reliable?

The price and inventory of SIS126DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS126DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS126DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS126DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS126DN-T1-GE3?

SIS126DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS126DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS126DN-T1-GE3?

For technical support, including SIS126DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS126DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS126DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS126DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS126DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS126DN-T1-GE3?

All SIS126DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS126DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS126DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS126DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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