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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS184DN-T1-GE3

Name: SIS184DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS184DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS184DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS184DN-T1-GE3.pdf

Description:: MOSFET N-CH 60V 17.4A/65.3A PPAK

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Product details

Overview

SIS184DN-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 4.7 mΩ at V_GS = 10 V, Q_g = 21 nC typ., 65.3 A continuous drain current (T_J = 150 °C), and optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIS184DN-T1-GE3 datasheet, SIS184DN-T1-GE3 pinout, SIS184DN-T1-GE3 application, or SIS184DN-T1-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_g and R_DS(on)–Q_oss figures of merit, 100 % R_g and UIS testing, thermal performance with R_thJC = 1.9 °C/W, and suitability for space-constrained industrial and motor drive switch designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance and gate charge trade-offs. Its design emphasizes minimized switching losses via low Q_gd (3.5 nC) and Q_oss (24.4 nC), while maintaining robust avalanche capability (E_AS = 20 mJ) and body diode performance (t_rr = 35 ns, Q_rr = 32 nC).

The PowerPAK 1212-8 package features an exposed drain pad for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 1.9 °C/W. It uses a single-die configuration with 8 terminals-four parallel drain pins, one gate, and three source pins-optimized for high-current, low-inductance layouts in high-frequency switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus and primary-side switch applications.
R_DS(on) max @ V_GS = 10 V	5.8 mΩ - Ensures <1 W conduction loss at 40 A, critical for high-current synchronous rectifiers.
Q_g typ.	21 nC - Low gate drive energy reduces driver IC loading and enables efficient 500 kHz+ operation.
I_D continuous @ T_C = 25 °C	65.3 A - High current rating supports compact, high-power-density DC/DC converter designs.
R_thJC max	2.4 °C/W - Enables effective heat transfer from die to heatsink or copper plane, supporting >50 W dissipation.
V_GS(th)	2.0–3.4 V - Logic-level compatible gate threshold allows direct drive from 3.3 V or 5 V controllers.
C_iss	1490 pF - Predictable input capacitance simplifies gate driver sizing and EMI filtering.

Pinout & Package

Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm × 1.05 mm), leadless, surface-mount, with exposed drain pad on bottom side. Thermal and electrical performance relies on proper PCB land pattern per Vishay AN822 and AN826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	Four parallel drain terminals reduce package inductance and current density; connected directly to exposed copper pad for thermal and electrical path.
4	Gate (G)	Single gate input; low R_g (0.2–1.3 Ω) minimizes gate ringing and improves switching control fidelity.
5, 6, 7	Source (S)	Three parallel source terminals lower source loop inductance and improve body diode commutation in synchronous rectification.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers best-in-class R_DS(on)–Q_g FOM for reduced conduction + switching losses in high-frequency SMPS.
100 % R_g tested	Guarantees gate resistance consistency (0.2–1.3 Ω), ensuring predictable turn-on/turn-off timing across production lots.
100 % UIS tested	Validates ruggedness under unclamped inductive switching stress, critical for motor drive and load switch reliability.
Low Q_oss (24.4 nC)	Minimizes reverse recovery losses during hard-switched transitions, improving efficiency in buck and flyback topologies.
Exposed drain pad	Enables direct thermal coupling to PCB copper, achieving R_thJC = 1.9 °C/W without external heatsink.

Applications

Server VRM Output Stage	Industrial BLDC Motor Inverter
Use Scenario: High-current, high-efficiency 12 V → 1 V output stage in server CPU voltage regulators operating at 500–1000 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode; switched complementary to high-side FET with precise dead-time control. Use Value: 4.7 mΩ R_DS(on) cuts conduction loss by >60 % vs. legacy SO-8 MOSFETs, enabling higher power density and cooler operation.	Use Scenario: Low-voltage (24–48 V) 3-phase inverter driving brushless DC motors in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; handles peak currents up to 100 A with fast body diode recovery (t_rr = 35 ns). Use Value: Low Q_rr (32 nC) and soft-recovery body diode minimize shoot-through risk and EMI during PWM commutation.
USB-C PD Fast Charger	Telecom DC/DC Intermediate Bus Converter
Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD charger using active clamp flyback topology. IC Role / Device Role / Timing Role: N-channel rectifier controlled by dedicated SR controller; operates with V_GS driven from transformer auxiliary winding. Use Value: 2.0–3.4 V V_GS(th) ensures reliable turn-on even with low auxiliary winding voltage, improving light-load efficiency.	Use Scenario: Primary-side switch in 48 V input, 12 V output telecom intermediate bus converter (IBC) with SiC gate driver. IC Role / Device Role / Timing Role: High-frequency (300–600 kHz) hard-switched power switch; requires low C_iss (1490 pF) and Q_gd (3.5 nC) for minimal driver loss. Use Value: Optimized dynamic parameters enable >95 % efficiency at full load while maintaining stable gate drive under high dv/dt.

Server VRM Output Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-efficiency 12 V → 1 V output stage in server CPU voltage regulators operating at 500–1000 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode; switched complementary to high-side FET with precise dead-time control.

Use Value: 4.7 mΩ R_DS(on) cuts conduction loss by >60 % vs. legacy SO-8 MOSFETs, enabling higher power density and cooler operation.

Use Scenario: Low-voltage (24–48 V) 3-phase inverter driving brushless DC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; handles peak currents up to 100 A with fast body diode recovery (t_rr = 35 ns).

Use Value: Low Q_rr (32 nC) and soft-recovery body diode minimize shoot-through risk and EMI during PWM commutation.

USB-C PD Fast Charger

Telecom DC/DC Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD charger using active clamp flyback topology.

IC Role / Device Role / Timing Role: N-channel rectifier controlled by dedicated SR controller; operates with V_GS driven from transformer auxiliary winding.

Use Value: 2.0–3.4 V V_GS(th) ensures reliable turn-on even with low auxiliary winding voltage, improving light-load efficiency.

Use Scenario: Primary-side switch in 48 V input, 12 V output telecom intermediate bus converter (IBC) with SiC gate driver.

IC Role / Device Role / Timing Role: High-frequency (300–600 kHz) hard-switched power switch; requires low C_iss (1490 pF) and Q_gd (3.5 nC) for minimal driver loss.

Use Value: Optimized dynamic parameters enable >95 % efficiency at full load while maintaining stable gate drive under high dv/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR184DP-T1-GE3	Same die, identical R_DS(on), Q_g, and SO-8 package; R_thJA = 40 °C/W vs. 33 °C/W for SIS184DN-T1-GE3.	SO-8 variant offers easier hand-soldering but 16× higher junction-to-ambient thermal resistance than PowerPAK 1212-8.	Select SiR184DP-T1-GE3 only if board layout lacks thermal copper area or reflow capability for leadless packages.
IRL1842PBF	Legacy Gen III device; R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 32 nC, R_thJC = 3.0 °C/W - higher conduction and switching losses.	Compatible with same gate drive but delivers ~25 % lower efficiency at 40 A due to inferior FOM.	Choose IRL1842PBF only for cost-sensitive, low-frequency (<200 kHz), low-power (<25 W) replacements where thermal margin exists.

Compared with SiR184DP-T1-GE3 and IRL1842PBF, the SIS184DN-T1-GE3 provides superior thermal performance (R_thJC = 1.9 °C/W), lowest R_DS(on)–Q_g FOM, and smallest footprint-making it optimal for high-power-density, high-frequency applications where PCB real estate and thermal headroom are constrained.

Availability

SIS184DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, motor drive switch, and industrial DC/DC converter applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIS184DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The SIS184DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-frequency, high-current switching applications in computing, industrial, and telecom power supplies where low R_DS(on), low Q_g, and advanced thermal packaging are essential.

FAQ

What is the maximum continuous drain current rating for SIS184DN-T1-GE3 at case temperature of 70 °C?

The SIS184DN-T1-GE3 supports 52.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 65.3 A value at T_C = 25 °C due to thermal constraints, and assumes proper PCB copper area and airflow per Vishay AN822 guidelines. The SIS184DN-T1-GE3 must be mounted on a minimum recommended land pattern to sustain this current reliably.

Does SIS184DN-T1-GE3 have avalanche capability, and how is it rated?

Yes, the SIS184DN-T1-GE3 is rated for single-pulse avalanche with I_AS = 20 A (L = 0.1 mH) and E_AS = 20 mJ. These values are validated per JEDEC JESD24-1 and confirmed by 100 % UIS testing during production. The SIS184DN-T1-GE3 is designed to withstand transient inductive energy without failure, making it suitable for motor drive and relay-switching applications where unclamped inductive loads occur.

What is the gate-source threshold voltage range for SIS184DN-T1-GE3, and how does it vary with temperature?

The SIS184DN-T1-GE3 has a V_GS(th) range of 2.0 V to 3.4 V at T_J = 25 °C, with a negative temperature coefficient of −6.6 mV/°C. As junction temperature rises, V_GS(th) decreases linearly-e.g., ~2.7 V at 100 °C-ensuring stable turn-on behavior across operating conditions. This characteristic is fully documented in the SPECIFICATIONS table and typical curves of the SIS184DN-T1-GE3 datasheet.

Can SIS184DN-T1-GE3 be used in synchronous rectification with zero-voltage switching (ZVS) topologies?

Yes, the SIS184DN-T1-GE3 is well-suited for ZVS applications due to its low Q_oss (24.4 nC) and fast, soft-recovery body diode (t_rr = 35 ns, Q_rr = 32 nC). These parameters minimize reverse recovery losses and enable clean turn-on under resonant conditions. The SIS184DN-T1-GE3 has been validated in LLC and active-clamp flyback designs where ZVS is maintained across wide load ranges.

What is the recommended solder reflow profile for SIS184DN-T1-GE3, and is lead-free assembly supported?

The SIS184DN-T1-GE3 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature of 240 °C (±0 °C tolerance) for 20–40 seconds. The official profile is published in Vishay document 73257. Manual soldering is not recommended due to its leadless PowerPAK 1212-8 construction. The SIS184DN-T1-GE3 is RoHS-compliant and halogen-free, meeting all requirements for modern lead-free manufacturing.

SIS184DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Ta), 65.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1490 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS184DN-T1-GE3 FAQ

1.How can I place an order for SIS184DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS184DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS184DN-T1-GE3 reliable?

The price and inventory of SIS184DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS184DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS184DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS184DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS184DN-T1-GE3?

SIS184DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS184DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS184DN-T1-GE3?

For technical support, including SIS184DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS184DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS184DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS184DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS184DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS184DN-T1-GE3?

All SIS184DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS184DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS184DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS184DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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