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Vishay Siliconix SIS184LDN-T1-GE3
- Part No.:
- SIS184LDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS184LDN-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,662
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Product details
Overview
SIS184LDN-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 5.4 mΩ at VGS = 10 V and 8.3 mΩ at VGS = 4.5 V, with 12.3 nC typical gate charge and 69.4 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SIS184LDN-T1-GE3 datasheet, SIS184LDN-T1-GE3 pinout, SIS184LDN-T1-GE3 application, or SIS184LDN-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qg and RDS(on)–Qoss figures-of-merit, 100 % Rg and UIS testing, and thermal performance with RthJC = 1.9 °C/W (typical) for high-power-density board designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low conduction and switching losses. Its gate charge profile (Qg = 12.3 nC typ. at VGS = 4.5 V) and low Qgd/Qg ratio support fast, efficient hard-switching in high-frequency DC/DC topologies.
The device integrates a robust body diode with trr = 23 ns (typ.) and Qrr = 14 nC (typ.), enabling reliable synchronous rectification without external Schottky diodes. Thermal design is supported by a low junction-to-case resistance (RthJC = 1.9 °C/W) and validated soldering compatibility with leadless PowerPAK® 1212-8 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports input rails up to 48 V nominal systems with margin for transient spikes in industrial and telecom power supplies. |
| RDS(on) @ 10 V | 5.4 mΩ max - enables <1 W conduction loss at 40 A, critical for high-current synchronous rectifiers and motor drive half-bridges. |
| RDS(on) @ 4.5 V | 8.3 mΩ max - ensures stable operation with 5 V or 4.5 V gate drivers, eliminating need for level-shifting in low-voltage control circuits. |
| Qg typ. | 12.3 nC - reduces gate drive power and switching transition time, supporting >1 MHz operation in GaN-complementary buck converters. |
| ID cont. @ TC = 25 °C | 69.4 A - allows single-device implementation in 100 W–200 W DC/DC stages without paralleling, simplifying layout and reducing BOM count. |
| RthJC | 1.9 °C/W typical - enables direct thermal coupling to heatsink or copper pour, achieving >70 W dissipation with modest thermal interface resistance. |
| VGS(th) | 1–3 V - provides clear logic-level turn-on margin with standard 3.3 V or 5 V microcontrollers and PWM controllers. |
Pinout & Package
Package: PowerPAK® 1212-8, leadless surface-mount, 3.3 mm × 3.3 mm footprint with exposed drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals - reduce source inductance and improve current sharing in high-di/dt applications like motor drives. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to exposed copper paddle - provide low-inductance, high-current path to PCB ground plane or heatsink. |
| 4 (top-side center) | Gate (G) | Single gate terminal located between source and drain rows - minimizes gate loop inductance and improves EMI performance in switching nodes. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on)–Qg FOM of 0.066 Ω·nC, reducing total switching + conduction loss in 500 kHz–2 MHz converters. |
| 100 % Rg tested | Ensures gate resistance ≤ 1.3 Ω, guaranteeing predictable turn-on/turn-off timing and minimizing gate driver stress across production lots. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 20 A and EAS = 20 mJ - critical for motor drive and relay drive reliability. |
| Optimized RDS(on)–Qoss FOM | Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and soft-switching topologies such as LLC. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for automotive and industrial environmental compliance programs. |
Applications
| Server VRM Synchronous Rectifier | Industrial DC/DC Primary Switch |
|---|---|
|
Use Scenario: High-current, high-frequency point-of-load (POL) converter in 1U server chassis with strict thermal envelope. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 800 kHz–1 MHz with 3.3 V or 5 V gate drive. Use Value: 5.4 mΩ RDS(on) at 10 V reduces conduction loss by >35 % vs. legacy Gen III MOSFETs, enabling >95 % efficiency at 40 A output while maintaining case temperature <90 °C. |
Use Scenario: 48 V input to 12 V isolated DC/DC module for factory automation PLCs requiring long-term reliability under 24/7 operation. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology, driven by isolated gate driver with 4.5 V output. Use Value: 8.3 mΩ RDS(on) at 4.5 V eliminates need for gate boost circuitry, lowering system cost and improving startup stability across wide temperature range (−40 °C to +125 °C). |
| Brushless DC Motor Inverter | Battery Protection Load Switch |
|
Use Scenario: 24 V BLDC inverter for HVAC fan control with space-constrained PCB and forced-air cooling. IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter leg, commutated at 20 kHz with dead-time control. Use Value: 23 ns body diode trr and low Qrr suppress voltage spikes during freewheeling, reducing snubber losses and EMI filter size by 30 %. |
Use Scenario: Smart battery pack for portable medical equipment requiring overcurrent and short-circuit protection with minimal voltage drop. IC Role / Device Role / Timing Role: Single-pole load switch controlling main battery discharge path, controlled by MCU GPIO with 3.3 V logic. Use Value: 1–3 V VGS(th) ensures full enhancement at 3.3 V, delivering <100 mV drop at 20 A - preserving >99 % of battery voltage for sensitive analog front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8721PBF | RDS(on) = 6.8 mΩ @ 4.5 V; Qg = 14.2 nC; TO-220AB package; higher RthJA (62 °C/W) | Requires heatsink for >15 A operation; unsuitable for ultra-thin or high-density layouts due to through-hole footprint. | Choose when mechanical mounting to external heatsink is preferred and board space is unconstrained. |
| SUP60090-07-E3 | RDS(on) = 7.0 mΩ @ 4.5 V; Qg = 10.5 nC; PowerPAK® SO-8; lower ID rating (52 A @ TC = 25 °C) | Limited to ≤150 W applications; smaller thermal pad area reduces maximum steady-state power handling. | Choose when gate drive is limited to ≤10.5 nC budget and thermal requirements are moderate (<40 W dissipation). |
Compared with IRL8721PBF and SUP60090-07-E3, the SIS184LDN-T1-GE3 delivers superior power density via its 3.3 mm × 3.3 mm PowerPAK® 1212-8 package, lowest RDS(on) at 4.5 V, and highest continuous current rating - making it optimal for space- and efficiency-critical 100–200 W industrial and computing power stages.
Availability
SIS184LDN-T1-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC/DC converters, and server VRMs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for SIS184LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS184LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current switching in compact power conversion systems where thermal management and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current for SIS184LDN-T1-GE3 at 70 °C case temperature?
The SIS184LDN-T1-GE3 supports 55.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8 package and must be verified against actual board layout, copper area, and airflow conditions in the final design. The SIS184LDN-T1-GE3 maintains RDS(on) stability across this range due to its low temperature coefficient.
Does SIS184LDN-T1-GE3 require a gate resistor for EMI suppression?
The SIS184LDN-T1-GE3 has a typical gate resistance (Rg) of 0.75 Ω and is 100 % Rg tested, but a small external gate resistor (1–5 Ω) is recommended to dampen ringing in high-di/dt switching nodes. This value balances switching speed control and EMI reduction without significantly increasing td(on)/td(off). The SIS184LDN-T1-GE3's low Qgd (2.65 nC) further aids clean turn-off transitions.
Can SIS184LDN-T1-GE3 be used in avalanche energy applications?
Yes - the SIS184LDN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with single-pulse avalanche ratings of IAS = 20 A and EAS = 20 mJ. These values apply under specified test conditions (L = 0.1 mH), and repeated avalanche operation is not recommended. For robustness validation, the SIS184LDN-T1-GE3's avalanche capability supports motor drive freewheeling and relay snubbing in industrial controls.
What is the thermal resistance from junction to ambient for SIS184LDN-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board (per note b in datasheet), the SIS184LDN-T1-GE3 has a maximum RthJA of 33 °C/W (t ≤ 10 s). For steady-state design, use the typical value of 24 °C/W. This thermal performance assumes standard solder paste reflow and no additional heatsinking; adding 1 oz. copper pour beneath the exposed drain pad can improve RthJA by ~30 %. The SIS184LDN-T1-GE3's RthJC = 1.9 °C/W enables precise junction temperature estimation when mounted to a heatsink.
Is SIS184LDN-T1-GE3 compatible with lead-free reflow profiles?
Yes - the SIS184LDN-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C (per soldering recommendations in datasheet section d). It uses a lead (Pb)-free and halogen-free construction, and the PowerPAK® 1212-8 package complies with JEDEC J-STD-020 moisture sensitivity level 1. Manual soldering with an iron is not recommended; the SIS184LDN-T1-GE3 requires controlled reflow per Vishay document 73257.
SIS184LDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.7A (Ta), 69.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS184LDN-T1-GE3 FAQ
1.How can I place an order for SIS184LDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS184LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS184LDN-T1-GE3 reliable?
The price and inventory of SIS184LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS184LDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS184LDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS184LDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS184LDN-T1-GE3?
SIS184LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS184LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS184LDN-T1-GE3?
For technical support, including SIS184LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS184LDN-T1-GE3 requirements.
6.How does Aetrix verify that SIS184LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS184LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS184LDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS184LDN-T1-GE3?
All SIS184LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS184LDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS184LDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS184LDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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