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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS322DNT-T1-GE3

Name: SIS322DNT-T1-GE3
Brand: Vishay Siliconix
SKU: SIS322DNT-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS322DNT-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS322DNT-T1-GE3.pdf

Description:: MOSFET N-CH 30V 38.3A PPAK1212-8

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Product details

Overview

SIS322DNT-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S leadless package, delivering R_DS(on) = 7.5 mΩ at V_GS = 10 V and 12.0 mΩ at V_GS = 4.5 V, with 38.3 A continuous drain current at T_C = 25 °C, optimized for high-efficiency DC/DC conversion in server VRMs and telecom POL modules.

For engineers reviewing the SIS322DNT-T1-GE3 datasheet, SIS322DNT-T1-GE3 pinout, SIS322DNT-T1-GE3 application, or SIS322DNT-T1-GE3 equivalent, key selection criteria include its 0.75 mm profile, 100 % R_g and UIS tested reliability, 6.9 nC gate charge at 4.5 V drive, and thermal resistance R_thJC = 5 °C/W for thermally constrained board-level designs.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching with minimal gate charge. Its 30 V V_DS rating supports 12 V input bus architectures, while the 1.2–2.4 V gate threshold enables robust logic-level and PWM controller compatibility.

The device integrates a body diode with t_rr = 19–35 ns and Q_rr = 7–14 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by a copper-exposed drain pad and R_thJA = 31–39 °C/W (t ≤ 10 s) on standard FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input rails with 2.5× voltage margin for transient clamping
R_DS(on) @ 10 V	7.5 mΩ max - Enables <1.5 W conduction loss at 15 A in compact VRM phases
R_DS(on) @ 4.5 V	12.0 mΩ max - Ensures stable operation with 5 V gate drivers in POL converters
Q_g @ 4.5 V	6.9 nC typ - Reduces gate drive power and enables >1 MHz switching in high-density designs
I_D (T_C = 25 °C)	38.3 A - Delivers high current per phase without external heatsinking
R_thJC	5 °C/W typical - Allows direct thermal coupling to PCB copper or heatsink for thermal management
t_r/t_f	9–18 ns / 5–10 ns - Minimizes switching losses in hard-switched buck stages

Pinout & Package

Package: PowerPAK® 1212-8S - 3.3 mm × 3.3 mm × 0.75 mm leadless surface-mount package with exposed drain pad on bottom side; no plated terminations at singulated edges; solder fillet at copper tip not required for reliable interconnection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Common source connection for internal die; electrically tied to bottom-side exposed drain pad via substrate
5, 6, 7, 8 (D)	Drain	Exposed copper drain pad on bottom surface; primary thermal and current path to PCB ground plane
G (top-side center)	Gate	Single top-side gate pad; requires controlled impedance routing to minimize ringing in high-dI/dt applications

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 7.5 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint, reducing conduction loss vs. prior generations
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 5 mJ) for system-level reliability
0.75 mm height	Supports ultra-thin power modules and double-sided PCB assembly in space-constrained servers
Thin PowerPAK 1212-8S	Exposes drain on bottom for direct thermal transfer to PCB, achieving 5 °C/W junction-to-case resistance
Body diode t_rr = 19 ns	Reduces reverse recovery loss during synchronous FET commutation in buck converters

Applications

Server VRM Phase Legs	Telecom POL Converters
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U/2U rack servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 10–20 A per phase. Use Value: 7.5 mΩ R_DS(on) minimizes I²R loss at full load; 0.75 mm profile enables dense phase layout under CPU socket.	Use Scenario: Point-of-load DC/DC module converting 48 V or 12 V to sub-1 V for FPGA, ASIC, or optical transceivers. IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck stage with tight thermal constraints. Use Value: 12.0 mΩ R_DS(on) at 4.5 V ensures efficient operation with standard PWM controllers; 5 °C/W R_thJC enables passive cooling.
PC Motherboard CPU Power Stages	Industrial DC/DC Modules
Use Scenario: Dual-phase or triple-phase VRM delivering up to 200 A to desktop CPU with dynamic load steps. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch in high-frequency (≥1 MHz) buck topology. Use Value: 38.3 A I_D rating supports peak currents without derating; 6.9 nC Q_g reduces gate driver stress and EMI.	Use Scenario: Compact 12 V–5 V or 12 V–3.3 V isolated/non-isolated DC/DC for PLC I/O modules or motor drives. IC Role / Device Role / Timing Role: Primary-side switch in non-synchronous flyback or secondary-side synchronous rectifier. Use Value: 30 V V_DS provides margin for 12 V input transients; 100 % UIS testing ensures surge survivability in industrial environments.

Server VRM Phase Legs

Telecom POL Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U/2U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 10–20 A per phase.

Use Value: 7.5 mΩ R_DS(on) minimizes I²R loss at full load; 0.75 mm profile enables dense phase layout under CPU socket.

Use Scenario: Point-of-load DC/DC module converting 48 V or 12 V to sub-1 V for FPGA, ASIC, or optical transceivers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck stage with tight thermal constraints.

Use Value: 12.0 mΩ R_DS(on) at 4.5 V ensures efficient operation with standard PWM controllers; 5 °C/W R_thJC enables passive cooling.

PC Motherboard CPU Power Stages

Industrial DC/DC Modules

Use Scenario: Dual-phase or triple-phase VRM delivering up to 200 A to desktop CPU with dynamic load steps.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch in high-frequency (≥1 MHz) buck topology.

Use Value: 38.3 A I_D rating supports peak currents without derating; 6.9 nC Q_g reduces gate driver stress and EMI.

Use Scenario: Compact 12 V–5 V or 12 V–3.3 V isolated/non-isolated DC/DC for PLC I/O modules or motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in non-synchronous flyback or secondary-side synchronous rectifier.

Use Value: 30 V V_DS provides margin for 12 V input transients; 100 % UIS testing ensures surge survivability in industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR826DP-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V, larger PowerPAK 1212-8 package (0.95 mm height), higher Q_g = 12.5 nC	Better conduction loss but less suitable for ultra-thin modules; requires more gate drive energy	Select when lower R_DS(on) outweighs height constraint and thermal budget allows higher Q_g
IRLHS6342TRPBF	R_DS(on) = 11.5 mΩ @ 4.5 V, same 3.3 mm × 3.3 mm footprint, R_thJC = 6.5 °C/W, no UIS rating	Compatible layout but lacks avalanche ruggedness; lower gate charge (5.5 nC) aids high-frequency use	Select for cost-sensitive POL where avalanche immunity is not required and gate drive is limited

Compared with SiR826DP-T1-GE3 and IRLHS6342TRPBF, the SIS322DNT-T1-GE3 uniquely balances 7.5 mΩ conduction loss, 0.75 mm height, and 100 % UIS testing-making it optimal for thermally dense, reliability-critical VRM and telecom POL applications where both efficiency and ruggedness are mandatory.

Availability

SIS322DNT-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIS322DNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing and communications infrastructure.

The SIS322DNT-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® portfolio, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermal-constrained server, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for the SIS322DNT-T1-GE3 at 70 °C case temperature?

The SIS322DNT-T1-GE3 supports 30.6 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the target application.

Does the SIS322DNT-T1-GE3 have a specified avalanche energy rating?

Yes, the SIS322DNT-T1-GE3 has a single-pulse avalanche energy rating of E_AS = 5 mJ, measured with L = 0.1 mH. It is also 100 % UIS (Unclamped Inductive Switching) tested per JEDEC standards, confirming ruggedness in inductive switching events common in buck converter freewheeling phases.

What is the gate-source threshold voltage range for the SIS322DNT-T1-GE3?

The SIS322DNT-T1-GE3 has a gate-source threshold voltage V_GS(th) ranging from 1.2 V to 2.4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in noisy power environments.

Can the SIS322DNT-T1-GE3 be used in synchronous rectification applications?

Yes, the SIS322DNT-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on), fast body diode (t_rr = 19–35 ns), and low Q_rr (7–14 nC). Its 30 V V_DS rating supports output voltages up to 12 V, and its 0.75 mm profile facilitates placement in tight secondary-side layouts where the SIS322DNT-T1-GE3 serves as the active rectifier.

What is the thermal resistance from junction to ambient for the SIS322DNT-T1-GE3 on a standard FR4 board?

The SIS322DNT-T1-GE3 has a maximum junction-to-ambient thermal resistance R_thJA of 39 °C/W for t ≤ 10 s on a 1" × 1" FR4 board, as defined in its datasheet. For steady-state operation, the effective R_thJA depends heavily on PCB copper area and layer count; the 5 °C/W R_thJC value indicates strong thermal coupling to the PCB when the exposed drain pad is properly connected to a thermal plane.

SIS322DNT-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 38.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 19.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS322DNT-T1-GE3 FAQ

1.How can I place an order for SIS322DNT-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS322DNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS322DNT-T1-GE3 reliable?

The price and inventory of SIS322DNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS322DNT-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS322DNT-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS322DNT-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS322DNT-T1-GE3?

SIS322DNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS322DNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS322DNT-T1-GE3?

For technical support, including SIS322DNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS322DNT-T1-GE3 requirements.

6.How does Aetrix verify that SIS322DNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS322DNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS322DNT-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS322DNT-T1-GE3?

All SIS322DNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS322DNT-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS322DNT-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS322DNT-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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