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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS402DN-T1-GE3

Name: SIS402DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS402DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS402DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS402DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK1212-8

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Product details

Overview

SIS402DN-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 6 mΩ at V_GS = 10 V and 8 mΩ at V_GS = 4.5 V, with 35 A continuous drain current (T_C = 25 °C) and 12 nC typical total gate charge - optimized for high-efficiency DC/DC converters in notebook and point-of-load (POL) applications.

For engineers reviewing the SIS402DN-T1-GE3 datasheet, SIS402DN-T1-GE3 pinout, SIS402DN-T1-GE3 application, or SIS402DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, 100 % UIS and R_g tested qualification, halogen-free and RoHS-compliant construction, and thermal performance enabled by the exposed-drain PowerPAK® 1212-8 package.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 12 nC (V_GS = 4.5 V) and t_f = 10–15 ns (V_GEN = 10 V). Its gate threshold voltage (V_GS(th)) ranges from 1.15 V to 2.2 V, enabling robust 4.5 V logic-level drive compatibility.

The device features an integrated body diode with V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 25–50 ns, supporting synchronous rectification and freewheeling in buck converters. Thermal design leverages the PowerPAK® 1212-8's 1.9 °C/W typical R_thJC, with junction-to-ambient resistance as low as 24 °C/W (t ≤ 10 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on)	6 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 40 A in high-current POL rails
R_DS(on)	8 mΩ @ V_GS = 4.5 V - supports direct drive from standard 5 V or 3.3 V controller outputs
I_D (continuous)	35 A @ T_C = 25 °C - package-limited current handling for compact high-power density designs
Q_g	12 nC @ V_GS = 4.5 V - reduces gate drive power and enables >1 MHz switching in advanced POLs
R_thJC	1.9 °C/W (typ.) - allows efficient heat transfer from die to PCB copper, minimizing junction temperature rise
E_AS	61 mJ - withstands repetitive inductive switching stress without degradation in hard-switched topologies

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with exposed drain pad on the bottom side and 8 terminals arranged in a 3.30 mm × 3.30 mm footprint. The package uses copper substrate construction for low thermal resistance and high current capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (bottom-side drain pad)	Drain (D)	Monolithic copper thermal and electrical path - must be soldered to large PCB copper area for thermal management
1 (top-side)	Source (S)	Top-side source connection - used for Kelvin sensing or low-inductance source return routing
3 (top-side)	Gate (G)	Control terminal - requires low-impedance gate driver trace to minimize ringing and switching losses
2, 4, 5, 6, 7, 8 (top-side)	Source (S)	Multiple top-side source terminals - reduce source inductance and improve current sharing in parallel configurations

Key Features

Feature	Design Value
TrenchFET® technology	Enables 6 mΩ R_DS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 2× lower on-resistance than comparable TSOP-6 devices
100 % R_g tested	Guarantees gate resistance ≤ 2.4 Ω - ensures consistent turn-on timing and minimizes gate oscillation risk
100 % UIS tested	Validates ruggedness against unclamped inductive switching events up to 35 A and 61 mJ - critical for reliability in POL converters
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and computing end equipment
Exposed-drain PowerPAK® 1212-8	Delivers 1.9 °C/W R_thJC - reduces junction temperature rise by >40 °C vs. TSSOP-8 under identical 2 W dissipation

Applications

Notebook DC/DC Converter	Point-of-Load (POL) Regulator
Use Scenario: High-density voltage regulation for CPU/GPU core supplies in thin-and-light notebooks. IC Role / Device Role / Timing Role: Synchronous high-side switch in buck converter topology operating at 300–1000 kHz. Use Value: 8 mΩ R_DS(on) at 4.5 V enables >95 % efficiency at 25 A output while maintaining thermal headroom in constrained chassis space.	Use Scenario: Distributed power delivery to FPGAs, ASICs, and memory modules on server motherboards. IC Role / Device Role / Timing Role: Low-voltage, high-current power stage switch with fast transient response. Use Value: 12 nC Q_g at 4.5 V supports multi-MHz operation and tight load-step regulation without excessive gate drive loss.
Industrial DC/DC Module	Telecom Intermediate Bus Converter
Use Scenario: Compact 24 V input to 5 V/12 V isolated or non-isolated conversion in programmable logic controllers. IC Role / Device Role / Timing Role: Primary-side MOSFET in non-isolated buck or buck-boost regulator. Use Value: 61 mJ E_AS rating ensures reliable operation during line transients and short-circuit recovery cycles.	Use Scenario: 48 V intermediate bus step-down to 12 V for base station RF power amplifiers. IC Role / Device Role / Timing Role: High-efficiency, thermally constrained primary switch in high-frequency buck converter. Use Value: PowerPAK® 1212-8's 1.9 °C/W R_thJC allows full 35 A current capability with minimal heatsinking - reducing BOM cost and board area.

Notebook DC/DC Converter

Point-of-Load (POL) Regulator

Use Scenario: High-density voltage regulation for CPU/GPU core supplies in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Synchronous high-side switch in buck converter topology operating at 300–1000 kHz.

Use Value: 8 mΩ R_DS(on) at 4.5 V enables >95 % efficiency at 25 A output while maintaining thermal headroom in constrained chassis space.

Use Scenario: Distributed power delivery to FPGAs, ASICs, and memory modules on server motherboards.

IC Role / Device Role / Timing Role: Low-voltage, high-current power stage switch with fast transient response.

Use Value: 12 nC Q_g at 4.5 V supports multi-MHz operation and tight load-step regulation without excessive gate drive loss.

Industrial DC/DC Module

Telecom Intermediate Bus Converter

Use Scenario: Compact 24 V input to 5 V/12 V isolated or non-isolated conversion in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side MOSFET in non-isolated buck or buck-boost regulator.

Use Value: 61 mJ E_AS rating ensures reliable operation during line transients and short-circuit recovery cycles.

Use Scenario: 48 V intermediate bus step-down to 12 V for base station RF power amplifiers.

IC Role / Device Role / Timing Role: High-efficiency, thermally constrained primary switch in high-frequency buck converter.

Use Value: PowerPAK® 1212-8's 1.9 °C/W R_thJC allows full 35 A current capability with minimal heatsinking - reducing BOM cost and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	R_DS(on) = 4.5 mΩ @ 10 V, larger PowerPAK® 1212-8 dual-die package, higher Q_g (24 nC @ 4.5 V)	Better conduction loss at high current but slower switching; suited for lower-frequency, higher-current POLs	Select when lowest R_DS(on) dominates over switching loss and layout space permits larger footprint
IRLHS6342TRPBF	R_DS(on) = 7.5 mΩ @ 4.5 V, PQFN 3.3 × 3.3 mm package, lower Q_g (9.5 nC @ 4.5 V), no 100 % UIS test	Faster switching and smaller gate drive requirement, but reduced ruggedness in inductive loads	Select when gate drive capability is limited and system-level protection mitigates UIS stress

Compared with SiR466DP-T1-GE3 and IRLHS6342TRPBF, the SIS402DN-T1-GE3 delivers balanced performance: lower Q_g than SiR466DP for high-frequency efficiency, superior UIS ruggedness versus IRLHS6342 for unclamped inductive reliability, and optimal R_DS(on)/Q_g trade-off for 500 kHz–1 MHz notebook and POL designs.

Availability

SIS402DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, point-of-load (POL) regulators, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for SIS402DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and automotive-grade qualification.

The SIS402DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for the SIS402DN-T1-GE3 at 70 °C case temperature?

The SIS402DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capacity under steady-state thermal conditions and is independent of PCB layout - actual achievable current depends on thermal design, including copper area and layer count.

Does the SIS402DN-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SIS402DN-T1-GE3 has a guaranteed V_GS(th) range of 1.15 V to 2.2 V at I_D = 250 µA and T_J = 25 °C. This specification ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers and provides margin against false triggering due to noise or temperature drift.

Can the SIS402DN-T1-GE3 be used in synchronous rectification applications?

Yes, the SIS402DN-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) and fast body diode characteristics: V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 25–50 ns. Its integrated diode supports efficient freewheeling in buck converters, especially when paired with a matched low-Q_g control FET like the SIS402DN-T1-GE3 itself in dual-phase layouts.

What is the thermal resistance from junction to case (R_thJC) for the SIS402DN-T1-GE3?

The SIS402DN-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 1.9 °C/W and a maximum of 2.4 °C/W under steady-state conditions. This low R_thJC is enabled by the PowerPAK® 1212-8's exposed copper drain pad and is measured with the device mounted to an infinite heat sink - real-world values depend on PCB copper area and stack-up.

Is the SIS402DN-T1-GE3 qualified for reflow soldering with lead-free processes?

Yes, the SIS402DN-T1-GE3 is qualified for lead-free reflow soldering per JEDEC J-STD-020, with a peak temperature of 240 °C for 20–40 seconds. Vishay specifies the recommended profile in document 73257, and the device undergoes preconditioning and reliability testing (temperature cycling, HAST) after reflow to ensure assembly robustness.

SIS402DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS402DN-T1-GE3 FAQ

1.How can I place an order for SIS402DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS402DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS402DN-T1-GE3 reliable?

The price and inventory of SIS402DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS402DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS402DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS402DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS402DN-T1-GE3?

SIS402DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS402DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS402DN-T1-GE3?

For technical support, including SIS402DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS402DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS402DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS402DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS402DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS402DN-T1-GE3?

All SIS402DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS402DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS402DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS402DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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