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Vishay Siliconix SIS414DN-T1-GE3
- Part No.:
- SIS414DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS414DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 20A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,147
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Product details
Overview
SIS414DN-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.016 Ω at VGS = 4.5 V, 10 A continuous drain current (TC = 70 °C), 8.2 nC total gate charge, and 100 % UIS tested - optimized for synchronous DC/DC converter high-side switching in notebook system power and load switch applications.
For engineers reviewing the SIS414DN-T1-GE3 datasheet, SIS414DN-T1-GE3 pinout, SIS414DN-T1-GE3 application, or SIS414DN-T1-GE3 equivalent, key selection criteria include its 30 V VDS, low 0.016 Ω on-resistance at 4.5 V drive, 8.2 nC Qg, PowerPAK 1212-8 thermal performance (RthJC = 3.3 °C/W), and 100 % avalanche ruggedness validation.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) with fast switching dynamics: td(on) = 12 ns and tf = 10 ns at VGEN = 4.5 V, Rg = 1 Ω. Its gate threshold voltage (VGS(th)) ranges 0.6–1.5 V, enabling robust turn-on with standard logic-level drivers.
The device integrates a body diode with VSD = 0.77–1.1 V at IS = 5 A and trr = 13–26 ns, supporting synchronous rectification. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package, achieving RthJC = 3.3 °C/W (typ.) and RthJA = 29 °C/W (t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V and 24 V input DC/DC stages. |
| RDS(on) | 0.016 Ω at VGS = 4.5 V - Enables <160 mW conduction loss at 10 A, critical for high-efficiency notebook power rails. |
| Qg | 8.2 nC (VGS = 4.5 V) - Low gate charge reduces driver power demand and enables >1 MHz switching in compact converters. |
| ID (continuous) | 20 A (TC = 25 °C), 20 A (TC = 70 °C) - Package-limited current rating supports high-density load switching without derating. |
| PD | 31 W (TC = 25 °C) - High power dissipation capability enabled by ultra-low RthJC = 3.3 °C/W in PowerPAK 1212-8. |
| EAS | 5 mJ - Avalanche energy rating validated per 100 % UIS test; ensures reliability under inductive switching stress. |
| tr/tf | 54/10 ns (VGEN = 4.5 V) - Fast switching transitions minimize overlap losses in synchronous buck topologies. |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with an exposed drain pad on the bottom side, measuring 3.30 mm × 3.30 mm × 1.05 mm. Its construction delivers ultra-low junction-to-case thermal resistance (3.3 °C/W) and eliminates thermal bottlenecks common in TSOP-6 or TSSOP-8 packages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common source connection) | All eight terminals are internally connected to the large exposed copper drain pad - provides primary thermal path to PCB and low-inductance current return. |
| G (Pin 3) | Gate | Single gate terminal located centrally; requires low-impedance drive to control 20 A channel with minimal Miller effect due to Crss = 67 pF. |
| S (Pins 1, 2, 4, 5) | Source | Four dedicated source terminals provide low-inductance, high-current return path; essential for minimizing switching ringing in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.016 Ω RDS(on) at 4.5 V gate drive - eliminates need for level-shifting or high-voltage gate drivers in 3.3 V/5 V control systems. |
| 100 % UIS tested | Guarantees single-pulse avalanche ruggedness up to 10 A and 5 mJ - critical for surviving output short-circuit events in notebook VRMs. |
| PowerPAK® 1212-8 package | Delivers RthJC = 3.3 °C/W (typ.), outperforming SO-8 by >8× and TSSOP-8 by >20× - enables higher power density without heatsinks. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally compliant manufacturing for global notebook OEMs. |
| Low Qgd/Qg ratio | Qgd = 1.9 nC / Qg = 8.2 nC ≈ 23 % - suppresses Miller-induced shoot-through and improves hard-switching stability. |
Applications
| High-Efficiency Notebook VRM | Synchronous Buck Converter |
|---|---|
Use Scenario: Primary high-side switch in 1–3 phase CPU/GPU core voltage regulators delivering up to 100 A at <1 V. IC Role / Device Role / Timing Role: N-channel power switch controlling duty cycle and current delivery; operates at 300–1000 kHz with precise dead-time control. Use Value: 0.016 Ω RDS(on) at 4.5 V drive minimizes conduction loss; 8.2 nC Qg enables efficient high-frequency operation without excessive gate drive loss. |
Use Scenario: Main switching element in point-of-load (POL) DC/DC modules for DDR memory, chipset, or display power rails. IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck topology; commutates with complementary low-side FET under PWM control. Use Value: Fast tf = 10 ns and low Crss = 67 pF reduce cross-conduction risk; body diode trr = 13 ns supports clean reverse recovery during freewheeling. |
| Notebook System Load Switch | USB-C PD Power Path |
Use Scenario: Hot-swap and inrush current limiting for main battery or adapter input to system power bus. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated charge pump or external gate bias; controls power-up sequencing and fault isolation. Use Value: 30 V VDS accommodates 20 V USB PD inputs; 100 % UIS testing ensures survivability during hot-plug transients and capacitive load surges. |
Use Scenario: Bidirectional power path switch in USB-C port controllers managing sink/source mode transitions. IC Role / Device Role / Timing Role: High-side switch enabling or blocking power flow between source and sink; coordinated with PD controller for VBUS management. Use Value: Low RDS(on) reduces voltage drop across switch during 3 A–5 A charging; PowerPAK 1212-8 footprint fits tight USB-C port layouts while maintaining thermal headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Higher RDS(on) = 0.022 Ω @ 4.5 V; larger PowerPAK 1212-8S package (3.3 × 3.3 × 1.2 mm); Qg = 11.5 nC. | Targeted at higher-current (>30 A) industrial DC/DC where slightly lower efficiency is acceptable for enhanced ruggedness. | Select when needing higher avalanche energy (EAS = 12 mJ) and proven field reliability in harsh environments over marginal RDS(on) reduction. |
| IRLML6344TRPBF | Lower voltage rating (20 V); smaller Micro3 package; RDS(on) = 0.035 Ω @ 4.5 V; Qg = 4.2 nC. | Designed for low-voltage logic-level switching in portable accessories (<12 V input), not suitable for 30 V bus applications. | Choose only for space-constrained 5–12 V systems where 30 V blocking is unnecessary and ultra-low Qg dominates design priority. |
Compared with SiR872DP-T1-GE3, SIS414DN-T1-GE3 offers 27 % lower RDS(on) and 28 % lower Qg, enabling higher efficiency at 10–20 A loads; versus IRLML6344TRPBF, it provides double the VDS rating and 2.3× current capability, making it suitable for full notebook main rail designs rather than peripheral switching.
Availability
SIS414DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous DC/DC converters, notebook system power load switches, and USB-C PD power path management requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for SIS414DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.
The SIS414DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered specifically for high-density, high-efficiency DC/DC conversion in portable computing and mobile infrastructure where thermal performance and logic-level drive compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SIS414DN-T1-GE3 at 70 °C case temperature?
The SIS414DN-T1-GE3 is rated for 20 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and reflects thermal capability of the PowerPAK 1212-8 construction, not silicon die limitation. The device maintains this current with RDS(on) = 0.016 Ω at VGS = 4.5 V, ensuring low conduction loss under real-world thermal conditions. SIS414DN-T1-GE3 achieves this via its ultra-low RthJC = 3.3 °C/W.
Does SIS414DN-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, SIS414DN-T1-GE3 is fully characterized for 3.3 V and 4.5 V gate drive: RDS(on) = 0.020 Ω at VGS = 2.5 V and ID = 6 A confirms strong enhancement-mode behavior below 3.3 V. With VGS(th) = 0.6–1.5 V, the device turns on robustly using standard 3.3 V logic outputs or dedicated low-voltage gate drivers. SIS414DN-T1-GE3 is widely deployed in 3.3 V-controlled notebook VRMs without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SIS414DN-T1-GE3 under typical PCB mounting?
Under t ≤ 10 s pulse conditions on a standard 1" × 1" FR4 board, the SIS414DN-T1-GE3 exhibits RthJA = 29 °C/W (typical) and 36 °C/W (maximum). This value assumes surface-mount assembly with recommended solder land patterns per Vishay AN822. For steady-state operation, RthJA rises significantly - hence the datasheet emphasizes RthJC = 3.3 °C/W (typ.) as the more reliable metric for heatsink-integrated designs. SIS414DN-T1-GE3 leverages its exposed drain pad to maximize heat transfer into the PCB plane.
Is SIS414DN-T1-GE3 qualified for reflow soldering with lead-free processes?
Yes, SIS414DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020. The maximum peak temperature is 240 °C (with 20–40 s dwell time), matching standard Pb-free profiles. Vishay specifies compliance with IPC/JEDEC J-STD-020D and provides detailed reflow guidance in document 73257. The PowerPAK 1212-8 package is designed for robust thermal cycling performance, and SIS414DN-T1-GE3 undergoes preconditioning per industry standards prior to reliability testing.
How does the body diode performance of SIS414DN-T1-GE3 impact synchronous rectification?
The SIS414DN-T1-GE3 body diode features VSD = 0.77–1.1 V at IS = 5 A and trr = 13–26 ns at TJ = 25 °C, enabling clean commutation in synchronous buck topologies. Its low reverse recovery charge (Qrr = 5–10 nC) minimizes voltage spikes and EMI during freewheeling transitions. In practice, this allows SIS414DN-T1-GE3 to replace external Schottky diodes in mid-power POL converters, reducing BOM count while maintaining efficiency - a key advantage confirmed in Vishay application notes for notebook VRMs.
SIS414DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 795 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.4W (Ta), 31W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS414DN-T1-GE3 FAQ
1.How can I place an order for SIS414DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS414DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS414DN-T1-GE3 reliable?
The price and inventory of SIS414DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS414DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS414DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS414DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS414DN-T1-GE3?
SIS414DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS414DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS414DN-T1-GE3?
For technical support, including SIS414DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS414DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS414DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS414DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS414DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS414DN-T1-GE3?
All SIS414DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS414DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS414DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS414DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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