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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS415DNT-T1-GE3

Name: SIS415DNT-T1-GE3
Brand: Vishay Siliconix
SKU: SIS415DNT-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS415DNT-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS415DNT-T1-GE3.pdf

Description:: MOSFET P-CH 20V 35A PPAK1212-8

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Product details

Overview

SIS415DNT-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for high-efficiency load switching in space-constrained mobile power rails, featuring -20 V V_DS, 4.0 mΩ R_DS(on) at V_GS = -10 V, and -35 A continuous drain current at T_C = 25 °C - deployed in battery protection and USB-C power path control.

For engineers reviewing the SIS415DNT-T1-GE3 datasheet, SIS415DNT-T1-GE3 pinout, SIS415DNT-T1-GE3 application, or SIS415DNT-T1-GE3 equivalent, this page delivers verified package mapping (PowerPAK® 1212-8S), validated thermal resistance (R_thJC = 2.4 °C/W max), body diode recovery specs (t_rr = 25–50 ns), gate charge profile (Q_g = 55.5 nC typ. at V_GS = -4.5 V), and real-world load-switch design constraints.

Technical Context

This device uses TrenchFET® Gen III silicon architecture to achieve low on-resistance with fast switching transitions: t_d(on) = 14 ns and t_f = 14 ns under V_GEN = -10 V drive, while maintaining robust UIS capability and 100% R_g testing per unit. Its -1.5 V maximum V_GS(th) enables reliable turn-on from standard logic-level controllers.

The PowerPAK 1212-8S leadless package integrates eight terminals - four drain pads (D1–D4), three source pads (S1–S3), and one gate pad (G) - with exposed copper drain terminals on the bottom side for direct thermal coupling to PCB copper planes, enabling junction-to-case thermal resistance as low as 1.9 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for battery-side high-side switch applications up to Li-ion stack voltage.
R_DS(on) max @ V_GS = -10 V	4.0 mΩ - Enables <100 mW conduction loss at 5 A load, critical for thermally limited mobile PCBs.
R_DS(on) max @ V_GS = -4.5 V	5.5 mΩ - Confirmed operation with 4.5 V logic supply, supporting direct GPIO control without level-shifting.
Q_g typ.	55.5 nC - Determines gate driver current requirement (~5.6 mA avg. for 10 μs turn-on with 10 V swing).
I_D continuous @ T_C = 25 °C	-35 A - Validated current rating when mounted on ≥1"×1" FR4 with 2 oz copper, defining thermal layout minimums.
R_thJC max	2.4 °C/W - Specifies minimum thermal interface conductance needed between drain pad and heatsink/copper pour.
t_rr	25–50 ns - Body diode reverse recovery time limits minimum dead-time in synchronous buck or OR-ing configurations.

Pinout & Package

Package: PowerPAK® 1212-8S - 3.3 mm × 3.3 mm × 0.8 mm leadless surface-mount package with exposed drain terminals on bottom side for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
D1–D4	Drain	Four parallel drain terminals on bottom side; must be soldered to large copper pour for thermal dissipation and low-inductance current return.
S1–S3	Source	Three source terminals on bottom side; connect to system ground plane; define reference for gate drive and current sensing.
G	Gate	Single top-side gate pad; requires controlled-impedance routing and local decoupling to minimize ringing during fast switching.

Key Features

Feature	Design Value
TrenchFET® Gen III process	Delivers 20% lower R_DS(on) vs. prior generation at same die size, reducing board area for high-current switches.
0.8 mm max height	Enables use in ultra-thin mobile devices where Z-height is constrained by battery or display stack-up.
100% R_g and UIS tested	Ensures gate resistance consistency for predictable switching timing and guaranteed ruggedness against inductive load transients.
Exposed drain terminals	Provides direct thermal path from junction to PCB, achieving R_thJC = 1.9 °C/W - 3× better than SO-8 equivalents.
V_GS(th) range: -0.4 to -1.5 V	Guarantees turn-on with 2.5 V–4.5 V logic, eliminating need for external gate drivers in many portable designs.

Applications

Battery Protection Switch	USB-C Power Path Control
Use Scenario: Isolates main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events in smartphones and tablets. IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery anode and system power rail; activated/deactivated by battery management IC. Use Value: Low 4.0 mΩ R_DS(on) minimizes voltage drop and self-heating during normal operation, preserving battery runtime and thermal margin.	Use Scenario: Enables bidirectional power routing in USB-C PD implementations where host must supply or accept power. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch controlling VBUS path between port controller and system PMIC. Use Value: Fast 14 ns turn-on delay and 14 ns fall time support dynamic power role swapping within USB-C PD timing budgets.
Smartphone Backlight Dimming	Tablet Load Sharing
Use Scenario: PWM-controlled current sink for white LED strings in compact handheld displays. IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current via gate PWM; body diode unused. Use Value: 5.5 mΩ R_DS(on) at -4.5 V ensures >95% efficiency at 300 mA per string, reducing thermal load on display flex circuits.	Use Scenario: Parallel power path balancing between primary and auxiliary batteries or DC input sources in 2-in-1 tablets. IC Role / Device Role / Timing Role: OR-ing FET managing current flow direction based on source priority and voltage differential. Use Value: 25–50 ns body diode t_rr prevents shoot-through during source switchover, avoiding bus collapse and system reset.

Battery Protection Switch

USB-C Power Path Control

Use Scenario: Isolates main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery anode and system power rail; activated/deactivated by battery management IC.

Use Value: Low 4.0 mΩ R_DS(on) minimizes voltage drop and self-heating during normal operation, preserving battery runtime and thermal margin.

Use Scenario: Enables bidirectional power routing in USB-C PD implementations where host must supply or accept power.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch controlling VBUS path between port controller and system PMIC.

Use Value: Fast 14 ns turn-on delay and 14 ns fall time support dynamic power role swapping within USB-C PD timing budgets.

Smartphone Backlight Dimming

Tablet Load Sharing

Use Scenario: PWM-controlled current sink for white LED strings in compact handheld displays.

IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current via gate PWM; body diode unused.

Use Value: 5.5 mΩ R_DS(on) at -4.5 V ensures >95% efficiency at 300 mA per string, reducing thermal load on display flex circuits.

Use Scenario: Parallel power path balancing between primary and auxiliary batteries or DC input sources in 2-in-1 tablets.

IC Role / Device Role / Timing Role: OR-ing FET managing current flow direction based on source priority and voltage differential.

Use Value: 25–50 ns body diode t_rr prevents shoot-through during source switchover, avoiding bus collapse and system reset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR426DP-T1-GE3	-30 V V_DS, 5.7 mΩ R_DS(on) @ -10 V, larger PowerPAK 1212-8 package (1.1 mm height)	Higher voltage margin for 2-cell battery systems; less suitable for <0.8 mm Z-height constraints	Select when V_IN may exceed 20 V or when higher avalanche energy (E_AS = 42 mJ) is required.
DMT6009LPS-13	-20 V V_DS, 6.0 mΩ R_DS(on) @ -10 V, PowerDI 5060 package (5.0 mm × 6.0 mm)	Lower current rating (-25 A), significantly larger footprint, but higher thermal mass for intermittent loads	Choose when PCB layout allows larger area and thermal transient stress dominates steady-state loss.

Compared with SiR426DP-T1-GE3 and DMT6009LPS-13, the SIS415DNT-T1-GE3 offers the lowest profile and best R_DS(on)/area ratio for 20 V mobile load switching - making it optimal where board thickness and conduction loss are co-primary constraints.

Availability

SIS415DNT-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, USB-C power path control, and tablet load sharing requiring stable component supply across high-volume consumer electronics production cycles.

Supply support for SIS415DNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIS415DNT-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel portfolio, engineered specifically for ultra-low R_DS(on) and thin-profile load switching in portable computing and mobile communications.

FAQ

What is the maximum continuous drain current rating for SIS415DNT-T1-GE3 at 70 °C case temperature?

The SIS415DNT-T1-GE3 supports -35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥1" × 1" FR4 board and 2 oz copper, and reflects the device's ability to sustain high current under elevated thermal conditions without exceeding T_J = 150 °C.

Does SIS415DNT-T1-GE3 require a gate driver for 3.3 V microcontroller control?

No - the SIS415DNT-T1-GE3 has a V_GS(th) range of -0.4 V to -1.5 V and achieves 5.5 mΩ R_DS(on) at V_GS = -4.5 V, enabling full enhancement with 3.3 V logic (V_GS = -3.3 V). It operates reliably without external gate drivers in most portable load-switch applications.

What is the thermal resistance from junction to ambient for SIS415DNT-T1-GE3 on a standard PCB?

The SIS415DNT-T1-GE3 has a maximum R_thJA of 33 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper (per datasheet note b). This value is critical for calculating worst-case junction temperature rise under steady-state power dissipation and must be used with actual board layout data for accurate thermal modeling.

Can SIS415DNT-T1-GE3 be used in synchronous rectification applications?

No - the SIS415DNT-T1-GE3 is not characterized or rated for synchronous rectification. Its body diode t_rr (25–50 ns) and Q_rr (12–24 nC) are optimized for load switching, not high-frequency freewheeling. For synchronous rectification, Vishay recommends dedicated SR controllers paired with logic-level N-channel FETs.

Is SIS415DNT-T1-GE3 halogen-free and RoHS-compliant?

Yes - the SIS415DNT-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the datasheet (document 63684). It meets RoHS Directive 2011/65/EU and complies with Vishay's material categorization per doc# 99912.

SIS415DNT-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 5460 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS415DNT-T1-GE3 FAQ

1.How can I place an order for SIS415DNT-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS415DNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS415DNT-T1-GE3 reliable?

The price and inventory of SIS415DNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS415DNT-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS415DNT-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS415DNT-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS415DNT-T1-GE3?

SIS415DNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS415DNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS415DNT-T1-GE3?

For technical support, including SIS415DNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS415DNT-T1-GE3 requirements.

6.How does Aetrix verify that SIS415DNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS415DNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS415DNT-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS415DNT-T1-GE3?

All SIS415DNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS415DNT-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS415DNT-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS415DNT-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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