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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS424DN-T1-GE3

Name: SIS424DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS424DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS424DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS424DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 35A PPAK 1212-8

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Product details

Overview

SIS424DN-T1-GE3 from Vishay Siliconix is a N-channel 20-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 6.4 mΩ at V_GS = 10 V, 35 A continuous drain current (T_C = 25 °C), and 9.5 nC total gate charge - optimized for high-efficiency DC/DC converters and point-of-load (POL) regulation in notebook and system power applications.

For engineers reviewing the SIS424DN-T1-GE3 datasheet, SIS424DN-T1-GE3 pinout, SIS424DN-T1-GE3 application, or SIS424DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on), leadless PowerPAK 1212-8 thermal performance (R_thJC = 2.4 °C/W), 100 % UIS testing, and halogen-free/Pb-free compliance per ordering specification.

Technical Context

This N-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling compatibility with 3.3 V and 4.5 V gate drive systems. The device features integrated body diode with t_rr = 25–38 ns and Q_rr = 12–24 nC, supporting synchronous rectification in buck converters.

Thermally, it leverages the exposed-drain PowerPAK 1212-8 footprint for direct board heat sinking, achieving 2.4 °C/W junction-to-case resistance under steady-state conditions. Absolute maximum ratings include V_DS = 20 V, V_GS = ±20 V, and T_J = –55 to +150 °C - confirming suitability for compact, high-current, thermally constrained POL rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 19 V, ideal for 12 V and 5 V intermediate bus architectures.
R_DS(on)	6.4 mΩ @ V_GS = 10 V - minimizes conduction loss in high-current POL stages (e.g., 35 A load yields < 8 W I²R loss).
I_D (continuous)	35 A @ T_C = 25 °C - enables single-device solutions for >20 A output rails without paralleling.
Q_g	9.5 nC @ V_GS = 4.5 V - balances switching speed and gate driver loading for 500 kHz–1 MHz DC/DC operation.
R_thJC	2.4 °C/W - allows efficient heat transfer to PCB copper, keeping junction temperature rise ≤ 84 °C at 35 A with 2 oz copper.
Body diode V_SD	0.8–1.2 V @ I_S = 10 A - reduces reverse recovery loss during light-load discontinuous conduction mode (DCM).
Avalanche energy E_AS	45 mJ - provides robustness against inductive switching transients in non-synchronous designs.

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed drain pad on the bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H). The package delivers ultra-low thermal impedance via direct copper contact between the die attach pad and PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight terminals connect to internal drain metallization; bottom-side exposed pad is electrically and thermally tied to drain - must be soldered to large PCB copper area for thermal management.
3 (Source)	Source (S)	Top-side terminal labeled "S" - serves as power return path and reference for gate drive; connects to source bond wires and internal FET channel.
4 (Gate)	Gate (G)	Top-side terminal labeled "G" - controls channel conduction; requires low-impedance gate driver due to 0.3–2.8 Ω gate resistance and 9.5–14.3 nC Q_g.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 6.4 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - achieves higher current density than planar MOSFETs of comparable size.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events common in POL converter freewheeling paths.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for consumer, computing, and green industrial applications.
Exposed-drain thermal design	Bottom-side drain pad provides direct thermal path to PCB - reduces R_thJA to 26–34 °C/W (t ≤ 10 s) without heatsink.
Low Q_gd/Q_g ratio	Q_gd = 2.4 nC / Q_g = 9.5 nC ≈ 0.25 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

DC/DC Converter	POL Regulator
Use Scenario: High-frequency synchronous buck converter stepping 12 V down to 1.2 V for CPU core supply. IC Role / Device Role / Timing Role: High-side power switch handling 30+ A peak current with minimal conduction and switching loss. Use Value: 6.4 mΩ R_DS(on) and 9.5 nC Q_g enable >94 % efficiency at 1 MHz, reducing thermal stress on adjacent components.	Use Scenario: Compact 5 V-to-3.3 V point-of-load regulator on motherboard VRM. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode (CCM). Use Value: Fast body diode (t_rr = 25–38 ns) and low V_SD minimize reverse recovery loss, improving light-load efficiency.
Notebook System Power	Server VRM
Use Scenario: Dual-phase 19 V input buck converter powering GPU and chipset rails in thin-and-light laptops. IC Role / Device Role / Timing Role: Primary switching FET in each phase, driven by integrated controller with 4.5 V gate output. Use Value: V_GS(th) = 1.0–2.5 V ensures full enhancement at 4.5 V drive, while PowerPAK 1212-8's 1.05 mm height fits tight Z-height constraints.	Use Scenario: Multiphase VRM supplying 50+ A to server CPU with strict thermal budget. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch sharing current across parallel phases. Use Value: 35 A continuous rating and 2.4 °C/W R_thJC allow stable operation at 70 °C case temperature without derating.

DC/DC Converter

POL Regulator

Use Scenario: High-frequency synchronous buck converter stepping 12 V down to 1.2 V for CPU core supply.

IC Role / Device Role / Timing Role: High-side power switch handling 30+ A peak current with minimal conduction and switching loss.

Use Value: 6.4 mΩ R_DS(on) and 9.5 nC Q_g enable >94 % efficiency at 1 MHz, reducing thermal stress on adjacent components.

Use Scenario: Compact 5 V-to-3.3 V point-of-load regulator on motherboard VRM.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode (CCM).

Use Value: Fast body diode (t_rr = 25–38 ns) and low V_SD minimize reverse recovery loss, improving light-load efficiency.

Notebook System Power

Server VRM

Use Scenario: Dual-phase 19 V input buck converter powering GPU and chipset rails in thin-and-light laptops.

IC Role / Device Role / Timing Role: Primary switching FET in each phase, driven by integrated controller with 4.5 V gate output.

Use Value: V_GS(th) = 1.0–2.5 V ensures full enhancement at 4.5 V drive, while PowerPAK 1212-8's 1.05 mm height fits tight Z-height constraints.

Use Scenario: Multiphase VRM supplying 50+ A to server CPU with strict thermal budget.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch sharing current across parallel phases.

Use Value: 35 A continuous rating and 2.4 °C/W R_thJC allow stable operation at 70 °C case temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR424DP-T1-GE3	Same die, PowerPAK® 1212-8 dual configuration - two independent N-ch devices in one package; R_DS(on) identical per channel.	Used where space-constrained dual-switch topologies (e.g., half-bridge, dual-phase) require matched characteristics.	Select SiR424DP-T1-GE3 only when dual-channel integration reduces layout area and improves channel matching - not a drop-in replacement for single-channel use.
IRLHS6242PBF	20 V N-ch, R_DS(on) = 5.8 mΩ @ 4.5 V, but in 2 mm × 2 mm PQFN - smaller footprint, higher R_thJC (3.5 °C/W), no 100 % UIS test.	Better for ultra-compact, lower-current (<15 A) applications where thermal margin is less critical.	Choose IRLHS6242PBF only if board area is primary constraint and avalanche robustness is not required - verify gate drive compatibility with lower V_GS(th) (0.4–1.2 V).

Compared with SiR424DP-T1-GE3 and IRLHS6242PBF, the SIS424DN-T1-GE3 offers optimal balance of single-channel current capability (35 A), proven UIS ruggedness, and industry-leading thermal resistance - making it preferred for high-reliability, high-current POL and notebook power stages where layout simplicity and thermal headroom are critical.

Availability

SIS424DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, point-of-load regulators, and notebook system power applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIS424DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.

The SIS424DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered specifically for high-current, space-constrained DC/DC and POL applications where low R_DS(on), fast switching, and superior thermal dissipation are essential.

FAQ

What is the maximum continuous drain current rating for SIS424DN-T1-GE3 at 70 °C case temperature?

The SIS424DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 35 A value at 25 °C case temperature and is validated under steady-state thermal conditions with proper PCB copper layout per Vishay AN822 guidelines.

Does SIS424DN-T1-GE3 have a guaranteed avalanche rating, and what is its E_AS value?

Yes, the SIS424DN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested per datasheet, with a specified single-pulse avalanche energy E_AS of 45 mJ. This rating applies at T_J = 25 °C with L = 0.1 mH and confirms robustness against transient overvoltage events in non-synchronous or freewheeling configurations.

What is the gate threshold voltage range for SIS424DN-T1-GE3, and how does it affect 3.3 V logic-level drive?

The SIS424DN-T1-GE3 has a V_GS(th) range of 1.0 V to 2.5 V, ensuring reliable turn-on with 3.3 V gate drive. At V_GS = 3.3 V, R_DS(on) is typically ≤ 12 mΩ - sufficient for many POL applications. However, full enhancement (≤6.4 mΩ) requires ≥4.5 V drive, so gate driver selection must align with system voltage rails.

Can SIS424DN-T1-GE3 be reworked using manual soldering, and what is Vishay's recommendation?

No - Vishay explicitly states that manual soldering with a soldering iron is not recommended for the SIS424DN-T1-GE3 due to its leadless PowerPAK® 1212-8 construction. Rework must use controlled reflow profiles per document 73257, with peak temperature ≤ 260 °C and time at peak limited to 20–40 seconds to avoid delamination or thermal damage.

What is the thermal resistance from junction to ambient (R_thJA) for SIS424DN-T1-GE3 on a standard FR4 board?

The SIS424DN-T1-GE3 has a typical R_thJA of 26 °C/W and maximum of 34 °C/W for t ≤ 10 s on a 1" × 1" FR4 board (per datasheet note b). This value assumes standard 1 oz copper; adding spreading copper beyond ~0.3 in² yields diminishing returns, as confirmed in Vishay AN822 thermal characterization data.

SIS424DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 19.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS424DN-T1-GE3 FAQ

1.How can I place an order for SIS424DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS424DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS424DN-T1-GE3 reliable?

The price and inventory of SIS424DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS424DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS424DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS424DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS424DN-T1-GE3?

SIS424DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS424DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS424DN-T1-GE3?

For technical support, including SIS424DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS424DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS424DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS424DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS424DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS424DN-T1-GE3?

All SIS424DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS424DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS424DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS424DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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