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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS426DN-T1-GE3

Name: SIS426DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS426DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS426DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS426DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 35A PPAK1212-8

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Product details

Overview

SIS426DN-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Power MOSFET optimized for high-efficiency POL and DC/DC converter applications, featuring 20 V V_DS, 4.5 mΩ R_DS(on) at V_GS = 10 V, 35 A continuous drain current (T_C = 25 °C), and a PowerPAK 1212-8 leadless package with exposed drain thermal pad.

For engineers reviewing the SIS426DN-T1-GE3 datasheet, SIS426DN-T1-GE3 pinout, SIS426DN-T1-GE3 application, or SIS426DN-T1-GE3 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, 13.2 nC total gate charge for fast switching, robust UIS and R_g testing, and ultra-low junction-to-case thermal resistance (1.9 °C/W) enabling high-current operation in space-constrained PCB layouts.

Technical Context

This device employs trench-gate silicon technology to achieve low R_DS(on) while maintaining stable threshold voltage (1.2–2.5 V) and low gate charge (13.2 nC at 4.5 V). Its 20 V V_DS rating targets point-of-load regulation where input rails are ≤12 V, and its 100 % UIS-tested ruggedness supports reliable operation under transient overcurrent conditions.

The PowerPAK 1212-8 package integrates an exposed copper drain pad on the bottom surface, delivering 1.9 °C/W typical junction-to-case thermal resistance - over 20× better than TSSOP-8 - and enabling direct thermal coupling to PCB copper planes without heatsinks. The 3.3 mm × 3.3 mm footprint is compatible with TSOP-6 land patterns but delivers significantly higher current density.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports input rails up to 12 V with margin for transients in POL/DC-DC stages.
R_DS(on)	4.5 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-efficiency buck converters.
ID (continuous)	35 A at T_C = 25 °C - Sustains high output currents when mounted on thermally enhanced PCBs.
Q_g	13.2 nC at V_GS = 4.5 V - Minimizes gate drive power and enables efficient 1–2 MHz switching in synchronous rectifiers.
R_thJC	1.9 °C/W (typ.) - Allows >30 W power dissipation with <60 °C temperature rise above case, eliminating need for external heatsinks.
V_GS(th)	1.2–2.5 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers.
C_iss	1570 pF - Balances switching speed and EMI control in hard-switched topologies.

Pinout & Package

Package: PowerPAK® 1212-8 - 3.3 mm × 3.3 mm × 1.05 mm leadless surface-mount package with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight terminals connect to internal die drain; bottom-side exposed copper pad is electrically and thermally part of drain node.
3 (Gate)	Gate (G)	Standard gate terminal; requires <1.4 Ω gate resistance to limit ringing per datasheet R_g spec.
1, 8 (Source)	Source (S)	Two dedicated source terminals; used for Kelvin sensing or low-inductance source return in high-di/dt applications.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for 20 V MOSFETs, reducing both conduction and switching losses simultaneously.
100 % R_g and UIS tested	Ensures gate resistance consistency (<1.4 Ω max) and single-pulse avalanche energy capability (20 mJ), critical for reliability in unregulated input or overload conditions.
PowerPAK 1212-8 package	Provides 1.9 °C/W R_thJC and 24 °C/W R_thJA (t ≤ 10 s), enabling 35 A operation with only PCB copper as heatsink - no added thermal mass required.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally sensitive industrial and telecom applications.
Low V_GS(th) variation	±0.45 V tolerance (1.2–2.5 V) ensures consistent turn-on across temperature and process, simplifying gate driver design for multi-phase POL systems.

Applications

Server VRMs	GPU Power Delivery
Use Scenario: High-current, multi-phase buck converters supplying core voltage to Intel/AMD CPUs in enterprise servers. IC Role / Device Role / Timing Role: Synchronous rectifier in high-side or low-side position, switching at 300–600 kHz with tight duty cycle control. Use Value: 4.5 mΩ R_DS(on) minimizes conduction loss at 40–60 A per phase, while 13.2 nC Q_g enables fast transition and low gate drive loss.	Use Scenario: Compact, high-density power stages feeding NVIDIA/AMD GPUs in AI accelerators and gaming workstations. IC Role / Device Role / Timing Role: Low-side switch in 2-phase or 4-phase interleaved buck regulators operating at 1–2 MHz. Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint allows dense layout; 1.9 °C/W R_thJC maintains <100 °C junction temperature even at 35 A continuous load.
Telecom DC/DC Modules	Industrial PLC Power Supplies
Use Scenario: Isolated or non-isolated 48 V–12 V intermediate bus converters in 1RU telecom equipment. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side switch in forward/flyback topologies. Use Value: 20 V V_DS rating provides margin for 12 V rail transients; 100 % UIS testing ensures survival during line surges and hot-swap events.	Use Scenario: Input-stage switching in DIN-rail mounted 24 V power supplies for programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: High-efficiency buck controller output stage handling 15–25 A loads with wide ambient temperature range (-40 to +85 °C). Use Value: Stable R_DS(on) over -55 to +150 °C (normalized to 1.6× at 125 °C) ensures predictable efficiency across industrial temperature extremes.

Server VRMs

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converters supplying core voltage to Intel/AMD CPUs in enterprise servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side or low-side position, switching at 300–600 kHz with tight duty cycle control.

Use Value: 4.5 mΩ R_DS(on) minimizes conduction loss at 40–60 A per phase, while 13.2 nC Q_g enables fast transition and low gate drive loss.

Use Scenario: Compact, high-density power stages feeding NVIDIA/AMD GPUs in AI accelerators and gaming workstations.

IC Role / Device Role / Timing Role: Low-side switch in 2-phase or 4-phase interleaved buck regulators operating at 1–2 MHz.

Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint allows dense layout; 1.9 °C/W R_thJC maintains <100 °C junction temperature even at 35 A continuous load.

Telecom DC/DC Modules

Industrial PLC Power Supplies

Use Scenario: Isolated or non-isolated 48 V–12 V intermediate bus converters in 1RU telecom equipment.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side switch in forward/flyback topologies.

Use Value: 20 V V_DS rating provides margin for 12 V rail transients; 100 % UIS testing ensures survival during line surges and hot-swap events.

Use Scenario: Input-stage switching in DIN-rail mounted 24 V power supplies for programmable logic controllers and I/O modules.

IC Role / Device Role / Timing Role: High-efficiency buck controller output stage handling 15–25 A loads with wide ambient temperature range (-40 to +85 °C).

Use Value: Stable R_DS(on) over -55 to +150 °C (normalized to 1.6× at 125 °C) ensures predictable efficiency across industrial temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	30 V V_DS, 3.1 mΩ R_DS(on) @ 10 V, larger PowerPAK 5x6 package (5.0 mm × 6.0 mm)	Better suited for 24 V input systems requiring higher voltage margin; not drop-in due to larger footprint and different pinout.	Select when system input exceeds 15 V or thermal budget allows larger package for lower R_DS(on).
IRLHS6342TRPBF	20 V V_DS, 5.2 mΩ R_DS(on) @ 4.5 V, same PowerPAK 1212-8 footprint, 15.5 nC Q_g	Near-pin-compatible replacement with slightly higher conduction loss and gate charge; validated for identical POL use cases.	Choose if supply chain diversification is needed and 0.7 mΩ higher R_DS(on) is acceptable for target efficiency.

Compared with SIS426DN-T1-GE3, SiR872DP-T1-GE3 offers higher voltage rating and lower on-resistance but requires PCB redesign, while IRLHS6342TRPBF provides near-equivalent performance in the same footprint with minor trade-offs in R_DS(on) and Q_g, making it the preferred alternative for layout-constrained upgrades.

Availability

SIS426DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and telecom DC/DC modules requiring stable component supply, high-current density, and lead-free/halogen-free compliance.

Supply support for SIS426DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIS426DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK family, engineered specifically for high-frequency, high-current POL and DC/DC converter applications where thermal performance and compact size are critical.

FAQ

What is the maximum continuous drain current rating for SIS426DN-T1-GE3 at 70 °C case temperature?

The SIS426DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area for the exposed drain pad. Derating is not required between 25 °C and 70 °C case temperature per the datasheet's current derating curve.

Does SIS426DN-T1-GE3 require special rework procedures due to its leadless PowerPAK 1212-8 package?

Yes - manual soldering with a soldering iron is not recommended for SIS426DN-T1-GE3. Rework must use controlled thermal profiles matching the lead-free reflow specification (peak 240 °C, 20–40 s dwell), with preheating and ramp rates per Vishay document 73257. The exposed copper drain pad requires precise stencil design and solder paste volume to ensure void-free interconnection.

What is the typical gate-to-source threshold voltage range for SIS426DN-T1-GE3, and how does it vary with temperature?

The SIS426DN-T1-GE3 has a V_GS(th) range of 1.2 V to 2.5 V at T_J = 25 °C, with a temperature coefficient of -4.5 mV/°C. At 125 °C junction temperature, the threshold drops by ~450 mV, resulting in a practical range of ~0.75–2.05 V - ensuring reliable turn-on with standard 3.3 V gate drivers across full operating temperature.

Can SIS426DN-T1-GE3 be used in synchronous rectification for 12 V output DC/DC converters?

Yes - SIS426DN-T1-GE3 is explicitly designed for synchronous rectification in 12 V output DC/DC converters. Its 20 V V_DS rating provides sufficient margin against 12 V rail overshoot, and its 4.5 mΩ R_DS(on) at 10 V gate drive minimizes conduction loss. The low Q_gd/Q_g ratio (4 nC / 13.2 nC) also reduces Miller-induced shoot-through risk in high-frequency designs.

Is SIS426DN-T1-GE3 qualified for automotive applications?

No - SIS426DN-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. While its operating temperature range (-55 to +150 °C) overlaps with automotive requirements, Vishay does not list this part in its AEC-Q101 qualified portfolio, and no automotive-specific stress test data (e.g., HTOL, UHAST) is published for SIS426DN-T1-GE3.

SIS426DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS426DN-T1-GE3 FAQ

1.How can I place an order for SIS426DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS426DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS426DN-T1-GE3 reliable?

The price and inventory of SIS426DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS426DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS426DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS426DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS426DN-T1-GE3?

SIS426DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS426DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS426DN-T1-GE3?

For technical support, including SIS426DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS426DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS426DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS426DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS426DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS426DN-T1-GE3?

All SIS426DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS426DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS426DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS426DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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