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Vishay Siliconix SIS429DNT-T1-GE3
- Part No.:
- SIS429DNT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS429DNT-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 20A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,141
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Product details
Overview
SIS429DNT-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load, battery, and adapter switching in portable computing systems; features -30 V VDS, 0.021 Ω RDS(on) at -10 V VGS, 15 nC Qg (typ.), and PowerPAK® 1212-8T package with 0.8 mm profile.
For engineers reviewing the SIS429DNT-T1-GE3 datasheet, SIS429DNT-T1-GE3 pinout, SIS429DNT-T1-GE3 application, or SIS429DNT-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge behavior, body diode characteristics, and validated alternative parts for notebook PC power management designs.
Technical Context
This device operates as a single P-channel MOSFET with trench-based silicon architecture enabling low on-resistance and fast switching. It supports continuous drain current up to -20 A at TC = 25 °C and exhibits RthJC = 3.6 °C/W (typ.) for efficient heat transfer to the PCB.
The gate threshold voltage range of -1 V to -3 V ensures reliable turn-on with standard logic-level drive, while its 1350 pF Ciss and 185 pF Crss support stable operation in synchronous buck and OR-ing configurations. Body diode reverse recovery time is 34 ns (typ.) at 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; suitable for 3.3 V–12 V rail switching with margin. |
| RDS(on) @ -10 V | 0.021 Ω - Enables <170 mW conduction loss at -10.5 A, critical for thermally constrained notebook PCBs. |
| Qg (typ.) | 15 nC - Low gate charge reduces driver power demand and enables efficient 1–2 MHz switching in DC/DC controllers. |
| ID (cont.) | -20 A @ TC = 25 °C - Supports high-current load switching without external heatsink when mounted on 1"×1" FR4. |
| RthJC | 3.6 °C/W (typ.) - Enables direct thermal path to copper pour; allows >20 W dissipation with modest case cooling. |
| VGS(th) | -1 to -3 V - Ensures robust turn-on with 3.3 V or 5 V gate drivers; avoids partial-enhancement losses. |
| trr (body diode) | 34 ns (typ.) - Minimizes reverse recovery loss in bidirectional power paths and OR-ing applications. |
Pinout & Package
Package: PowerPAK® 1212-8T - leadless, surface-mount, 3.3 mm × 3.3 mm footprint with 0.8 mm max height and exposed drain-copper bottom side for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with 1.2–11.6 Ω gate resistance; optimized for low-noise, controlled turn-on/turn-off timing. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to large bottom-side copper pad; primary thermal and current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × area efficiency for compact, high-current switching in space-constrained notebooks. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Thin 0.8 mm profile | Enables ultra-low-profile system integration-critical for sub-16 mm-thick clamshell laptop designs. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting global environmental compliance programs. |
| Exposed drain-copper bottom | Provides dual-function thermal conduction and low-inductance power return path-no via-in-pad required for optimal performance. |
Applications
| Notebook Load Switch | Notebook Battery Protection |
|---|---|
Use Scenario: High-side power switch controlling 5 V or 12 V subsystems (e.g., USB-C PD port, display backlight) during sleep/wake transitions. IC Role / Device Role / Timing Role: P-channel high-side switch with fast turn-on (<15 ns td(on)) and low RDS(on) to minimize voltage drop and self-heating. Use Value: Reduces standby power loss by >40 % vs. older SO-8 equivalents due to 0.021 Ω on-resistance and minimal gate drive energy. |
Use Scenario: Reverse-current blocking between main battery and system bus during charging or hot-swap events. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional isolation with integrated body diode forward conduction capability. Use Value: Eliminates need for external Schottky diode; 34 ns trr prevents shoot-through during polarity reversal in smart battery circuits. |
| Notebook Adapter OR-ing | Industrial 24 V Hot-Swap |
Use Scenario: OR-ing function between AC adapter and battery to prioritize external power while preventing backfeed. IC Role / Device Role / Timing Role: Single P-channel MOSFET used in ideal diode configuration with external controller (e.g., LTC4412). Use Value: Achieves <0.1 V forward drop at 8 A, cutting diode heat generation by >85 % versus 40 V Schottky solutions. |
Use Scenario: Hot-swap protection for 24 V industrial I/O modules requiring inrush limiting and fault isolation. IC Role / Device Role / Timing Role: High-side switch with -20 A continuous rating and 20 mJ EAS for safe energy clamping during line transients. Use Value: Withstands 50 A pulsed drain current and 20 mJ single-pulse avalanche energy-enables robust field deployment without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR429DP-T1-GE3 | P-channel, same -30 V VDS, but 0.019 Ω RDS(on) @ -10 V and 18 nC Qg; PowerPAK® 1212-8 package (slightly taller, 1.05 mm). | Higher conduction efficiency but slower switching; better suited for lower-frequency, higher-current rails where gate drive strength is ample. | Select when lowest possible RDS(on) is prioritized over gate charge and board height constraints. |
| IRLML6344TRPBF | P-channel, -20 V VDS, 0.05 Ω RDS(on) @ -4.5 V, SOT-23 package; no avalanche rating or UIS testing. | Limited to ≤5 V systems; unsuitable for 12 V adapter switching or robust hot-swap due to lower voltage rating and no EAS spec. | Use only in cost-sensitive, low-power 3.3 V logic rails where -30 V rating and avalanche ruggedness are unnecessary. |
Compared with SiR429DP-T1-GE3, SIS429DNT-T1-GE3 trades 0.002 Ω higher RDS(on) for 3 nC lower Qg and 0.25 mm lower profile-critical for thin-client thermal design. Against IRLML6344TRPBF, it provides double the voltage rating, half the on-resistance at -10 V, and full avalanche qualification for industrial reliability.
Availability
SIS429DNT-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC load switching, battery protection circuits, and industrial 24 V hot-swap modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SIS429DNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SIS429DNT-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8T family, engineered specifically for space- and thermally constrained portable computing and industrial power-switching applications.
FAQ
What is the maximum continuous drain current for SIS429DNT-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SIS429DNT-T1-GE3 is -20 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capacity under steady-state thermal conditions and assumes proper PCB copper area per Vishay's recommended pad layout (Document 66832). Derating applies above 70 °C case temperature.
Does SIS429DNT-T1-GE3 support gate drive from a 3.3 V microcontroller?
Yes, SIS429DNT-T1-GE3 supports gate drive from a 3.3 V microcontroller: its gate threshold voltage (VGS(th)) ranges from -1 V to -3 V, and RDS(on) is specified at -4.5 V VGS (0.034 Ω max). At 3.3 V drive, it achieves partial enhancement-verified by transfer characteristic curves showing >5 A ID at VGS = -3.3 V and TJ = 25 °C.
Is SIS429DNT-T1-GE3 qualified for automotive applications?
No, SIS429DNT-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial and commercial temperature ranges (-55 °C to +150 °C), but Vishay does not list it in their AEC-Q101 product catalog nor subject it to automotive-specific stress testing. For automotive-grade equivalents, consult Vishay's AQ series such as SQJQ429E.
What is the thermal resistance from junction to ambient for SIS429DNT-T1-GE3 on a 1" × 1" FR4 board?
The maximum junction-to-ambient thermal resistance (RthJA) for SIS429DNT-T1-GE3 on a 1" × 1" FR4 board is 36 °C/W (typ. 29 °C/W), per Note c in the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions (single-layer 2 oz Cu, no internal planes), and actual performance improves significantly with multi-layer boards and thermal vias under the drain pad.
Can SIS429DNT-T1-GE3 be used in a synchronous rectifier configuration?
No, SIS429DNT-T1-GE3 is not intended for synchronous rectification. It is a P-channel MOSFET optimized for high-side switching-not low-side freewheeling. Its body diode forward voltage (VSD = -0.85 V typ. at -8.4 A) and reverse recovery characteristics (trr = 34 ns) are not optimized for high-frequency rectification, and no gate-drive timing or control guidance for SR use is provided in the datasheet.
SIS429DNT-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS429DNT-T1-GE3 FAQ
1.How can I place an order for SIS429DNT-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS429DNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS429DNT-T1-GE3 reliable?
The price and inventory of SIS429DNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS429DNT-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS429DNT-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS429DNT-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS429DNT-T1-GE3?
SIS429DNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS429DNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS429DNT-T1-GE3?
For technical support, including SIS429DNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS429DNT-T1-GE3 requirements.
6.How does Aetrix verify that SIS429DNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS429DNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS429DNT-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS429DNT-T1-GE3?
All SIS429DNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS429DNT-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS429DNT-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS429DNT-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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