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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS430DN-T1-GE3

Name: SIS430DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS430DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS430DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS430DN-T1-GE3.pdf

Description:: MOSFET N-CH 25V 35A PPAK 1212-8

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Product details

Overview

SIS430DN-T1-GE3 from Vishay Siliconix is a N-channel 25-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 5.1 mΩ at V_GS = 10 V and 6.9 mΩ at V_GS = 4.5 V, rated for 35 A continuous drain current (T_C = 25 °C), and optimized for high-efficiency DC/DC point-of-load (POL) converters in server power supplies.

For engineers reviewing the SIS430DN-T1-GE3 datasheet, SIS430DN-T1-GE3 pinout, SIS430DN-T1-GE3 application, or SIS430DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V gate drive, 13 nC total gate charge, 1.9 °C/W junction-to-case thermal resistance, and lead-free/halogen-free PowerPAK 1212-8 packaging for space-constrained, thermally demanding POL rails.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 13 nC (V_GS = 4.5 V) and t_f = 10–15 ns. Its 25 V V_DS rating and ±20 V V_GS range support robust operation in 12 V input POL stages.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 10 A and t_rr = 35–55 ns, enabling synchronous rectification and efficient freewheeling in buck converters. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 for direct board heat sinking, achieving R_thJC = 1.9 °C/W (typical).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Supports 12 V input buck converters with margin against transients and overshoot.
R_DS(on) @ 10 V	5.1 mΩ - Enables <1 W conduction loss at 35 A, critical for high-current POL efficiency.
R_DS(on) @ 4.5 V	6.9 mΩ - Ensures low-loss operation with standard 5 V gate drivers in compact DC/DC modules.
Q_g @ 4.5 V	13 nC - Reduces gate drive power and enables high-frequency (>1 MHz) switching without excessive driver loss.
I_D (continuous)	35 A @ T_C = 25 °C - Package-limited current capacity suitable for single-phase 30–40 A POL stages.
R_thJC	1.9 °C/W - Allows >40 W power dissipation with modest heatsinking, supporting high-density power delivery.
V_GS(th)	1.2–2.5 V - Ensures reliable turn-on with logic-level gate drive while minimizing shoot-through risk in synchronous designs.

Pinout & Package

Package: PowerPAK® 1212-8 - leadless, surface-mount package with exposed drain pad on bottom side for low-thermal-resistance PCB mounting. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H). Features dual drain pads (D1–D4) for enhanced current handling and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	Power Drain Connection	Four parallel drain terminals tied to large exposed copper pad - carries full load current and serves as primary thermal path to PCB.
5 (Gate)	Control Input	Low-capacitance gate terminal requiring <13 nC charge for full enhancement; sensitive to ESD and layout parasitics.
6 (Source)	Reference Node	Source connection referenced to power ground; used for current sensing and gate drive return in high-side/synchronous configurations.
7, 8 (Drain)	Power Drain Connection	Additional drain terminals completing eight-terminal configuration - electrically identical to pins 1–4, enhancing current sharing and thermal uniformity.

Key Features

Feature	Design Value
TrenchFET® Technology	Enables 5.1 mΩ R_DS(on) at 10 V in 3.3 mm² footprint - delivers higher current density than planar MOSFETs in same size.
100 % R_g Tested	Guarantees gate resistance ≤ 3 Ω - ensures consistent switching speed and reduces risk of oscillation in high-dI/dt applications.
100 % UIS Tested	Validated unclamped inductive switching capability up to 30 A - confirms ruggedness during hard-switching and fault events.
Halogen-free & Pb-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow standards - supports environmentally compliant manufacturing.
Exposed Drain Pad	Provides direct thermal interface to PCB copper - achieves 1.9 °C/W R_thJC, outperforming SO-8 and TSSOP-8 by >10× in thermal resistance.

Applications

Server Point-of-Load (POL) Converter	High-Density DC/DC Module
Use Scenario: Primary high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V bus. IC Role / Device Role / Timing Role: Main power switch operating at 300–1000 kHz with synchronous rectification; handles peak currents >30 A per phase. Use Value: 6.9 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss under typical VR13/VR14 control IC output, improving full-load efficiency by ≥0.5% vs. comparable 8-SO devices.	Use Scenario: Integrated power stage in compact 12 V–in, 1 V–out DC/DC modules for telecom and networking equipment. IC Role / Device Role / Timing Role: Single-chip high-side FET paired with controller IC; operates in continuous conduction mode with tight thermal constraints. Use Value: PowerPAK 1212-8's 1.9 °C/W R_thJC allows 35 A continuous current in <100 mm² area - enables module size reduction by 40% vs. TSSOP-8 solutions.
Industrial PLC Power Supply	AI Accelerator Board VRM
Use Scenario: Output stage switch in isolated 24 V–to–5 V/3.3 V DC/DC converters powering I/O and communication interfaces. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in active-clamp forward topology. Use Value: 30 A avalanche current rating (I_AS) and 45 mJ E_AS ensure reliable operation during line transients and short-circuit recovery without external snubbers.	Use Scenario: High-current phase leg in multi-phase VRMs supplying 40–60 A to AI inference accelerators (e.g., NVIDIA A100 GPU). IC Role / Device Role / Timing Role: Low-side or high-side switch in interleaved buck stages; driven by digital PWM controllers with adaptive dead-time control. Use Value: 13 nC Q_g at 4.5 V enables <50 ns propagation delay matching across phases - reduces current imbalance and improves dynamic load response.

Server Point-of-Load (POL) Converter

High-Density DC/DC Module

Use Scenario: Primary high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V bus.

IC Role / Device Role / Timing Role: Main power switch operating at 300–1000 kHz with synchronous rectification; handles peak currents >30 A per phase.

Use Value: 6.9 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss under typical VR13/VR14 control IC output, improving full-load efficiency by ≥0.5% vs. comparable 8-SO devices.

Use Scenario: Integrated power stage in compact 12 V–in, 1 V–out DC/DC modules for telecom and networking equipment.

IC Role / Device Role / Timing Role: Single-chip high-side FET paired with controller IC; operates in continuous conduction mode with tight thermal constraints.

Use Value: PowerPAK 1212-8's 1.9 °C/W R_thJC allows 35 A continuous current in <100 mm² area - enables module size reduction by 40% vs. TSSOP-8 solutions.

Industrial PLC Power Supply

AI Accelerator Board VRM

Use Scenario: Output stage switch in isolated 24 V–to–5 V/3.3 V DC/DC converters powering I/O and communication interfaces.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in active-clamp forward topology.

Use Value: 30 A avalanche current rating (I_AS) and 45 mJ E_AS ensure reliable operation during line transients and short-circuit recovery without external snubbers.

Use Scenario: High-current phase leg in multi-phase VRMs supplying 40–60 A to AI inference accelerators (e.g., NVIDIA A100 GPU).

IC Role / Device Role / Timing Role: Low-side or high-side switch in interleaved buck stages; driven by digital PWM controllers with adaptive dead-time control.

Use Value: 13 nC Q_g at 4.5 V enables <50 ns propagation delay matching across phases - reduces current imbalance and improves dynamic load response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	Higher R_DS(on) = 7.3 mΩ @ 4.5 V; larger PowerPAK 1515-8 package (4.0 mm × 4.0 mm); 20% higher Q_g.	Better suited for lower-frequency (<500 kHz), higher-current (>50 A) applications where thermal mass outweighs size constraints.	Select when board space permits larger footprint and higher thermal mass is needed for sustained 50 A operation.
IRLHS6342TRPBF	Lower R_DS(on) = 4.5 mΩ @ 4.5 V but rated only to 20 V V_DS; smaller PowerPAK 1212-8S variant; 11 nC Q_g.	Limited to 12 V input systems; unsuitable for 25 V-rated transient immunity requirements in server 12 V rails.	Choose only for cost-sensitive 12 V-only POL where 25 V breakdown margin is not required.

Compared with SIS430DN-T1-GE3, SiR870DP-T1-GE3 trades higher on-resistance and gate charge for greater thermal headroom in larger packages, while IRLHS6342TRPBF offers lower R_DS(on) but sacrifices 25 V robustness-making SIS430DN-T1-GE3 the optimal balance of voltage rating, size, and efficiency for modern 12 V server POL designs.

Availability

SIS430DN-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, high-density DC/DC modules, industrial PLCs, and AI accelerator VRMs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIS430DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIS430DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SIS430DN-T1-GE3 at 70 °C case temperature?

The SIS430DN-T1-GE3 is rated for 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited current handling under steady-state thermal conditions and assumes proper PCB copper area for heat spreading. Derating begins above 70 °C per the published current derating curve.

Does SIS430DN-T1-GE3 support logic-level gate drive, and what is its gate threshold voltage range?

Yes, SIS430DN-T1-GE3 supports logic-level gate drive with a guaranteed V_GS(th) range of 1.2 V to 2.5 V at I_D = 250 µA. This enables full enhancement using standard 3.3 V or 5 V microcontroller outputs or PWM controller gate drivers without level-shifting circuitry.

What is the thermal resistance from junction to ambient (R_thJA) for SIS430DN-T1-GE3 on a standard FR4 board?

The SIS430DN-T1-GE3 has a typical R_thJA of 24 °C/W and maximum of 33 °C/W when mounted on a 1" × 1" FR4 board per test condition b. Actual performance improves significantly with added copper area - e.g., 0.3–0.5 in² spreading copper reduces R_thJA to ~45–55 °C/W in four-layer boards.

Is SIS430DN-T1-GE3 suitable for synchronous rectification, and what are its body diode characteristics?

Yes, SIS430DN-T1-GE3 is suitable for synchronous rectification. Its body diode exhibits V_SD = 0.8–1.2 V at I_S = 10 A and reverse recovery time t_rr = 35–55 ns at T_J = 25 °C, enabling efficient freewheeling with low forward loss and minimal recovery-related switching loss in buck topologies.

What reflow profile should be used for soldering SIS430DN-T1-GE3, and is manual rework recommended?

SIS430DN-T1-GE3 requires lead-free reflow per JEDEC J-STD-020, with peak temperature of 240 °C for 20–40 seconds. Manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8 construction and exposed copper terminations; rework should use controlled hot-air or infrared profiling to avoid thermal damage.

SIS430DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS430DN-T1-GE3 FAQ

1.How can I place an order for SIS430DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS430DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS430DN-T1-GE3 reliable?

The price and inventory of SIS430DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS430DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS430DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS430DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS430DN-T1-GE3?

SIS430DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS430DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS430DN-T1-GE3?

For technical support, including SIS430DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS430DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS430DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS430DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS430DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS430DN-T1-GE3?

All SIS430DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS430DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS430DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS430DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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