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Vishay Siliconix SIS439DNT-T1-GE3
- Part No.:
- SIS439DNT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SIS439DNT-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 50A PPAK1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:8,577
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Product details
Overview
SIS439DNT-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in a PowerPAK® 1212-8S package, rated for -30 V drain-source voltage, 0.011 Ω RDS(on) at -10 V VGS, and -50 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch in portable power systems.
For engineers reviewing the SIS439DNT-T1-GE3 datasheet, SIS439DNT-T1-GE3 pinout, SIS439DNT-T1-GE3 application, or SIS439DNT-T1-GE3 equivalent, key selection criteria include its low-profile leadless package, -4.5 V logic-level gate drive compatibility, robust UIS rating, and thermal resistance of 1.9 °C/W (junction-to-case).
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (23 nC typ. at -4.5 V). Its gate threshold voltage range (-1.2 V to -2.8 V) ensures reliable turn-on with standard logic-level controllers.
The PowerPAK 1212-8S package integrates exposed-drain thermal pads on both top and bottom surfaces, enabling dual-side heat dissipation. The device is 100 % Rg and UIS tested per JEDEC JESD22-A115, supporting rugged operation in transient-heavy load-switch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail switching in 3.3 V/5 V/12 V systems |
| RDS(on) max @ -10 V | 0.011 Ω - Enables <15 mW conduction loss at 37 A, critical for high-current notebook PC power rails |
| RDS(on) max @ -4.5 V | 0.0195 Ω - Supports direct drive from 3.3 V GPIO without level-shifting in adapter switches |
| Qg typ. | 23 nC - Low gate charge reduces driver power and enables efficient 1 MHz+ PWM control |
| ID cont. @ TC = 25 °C | -50 A - Package-limited current handling suitable for high-power load switching |
| RthJC max | 2.4 °C/W - Enables >20 W power dissipation with minimal heatsink when mounted on copper plane |
| VGS(th) | -1.2 to -2.8 V - Guaranteed turn-on with 3.3 V logic, avoiding marginal biasing in battery-powered systems |
Pinout & Package
PowerPAK® 1212-8S is a 3.3 mm × 3.3 mm, 0.75 mm profile, leadless surface-mount package with exposed drain terminals on both top and bottom for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Top-side Drain) | Drain (D) | All eight top-side terminals are internally connected to the drain; provide low-inductance, high-current path and primary thermal interface |
| 1, 2, 3, 4 (Bottom-side Source) | Source (S) | Four dedicated bottom-side source pads enable low-impedance return path and reduce source inductance in high-dI/dt switching |
| 5, 6 (Bottom-side Gate) | Gate (G) | Two isolated gate pads minimize gate loop inductance and improve EMI performance in synchronous buck high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × area efficiency for compact 3.3 mm × 3.3 mm footprint |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche energy handling (EAS = 31.25 mJ) without derating in real-world load-dump events |
| Exposed-drain thermal design | Enables junction-to-case thermal resistance as low as 1.9 °C/W, reducing thermal margin risk in thermally constrained notebooks |
| Lead (Pb)-free and halogen-free construction | Meets RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912) for eco-conscious industrial and computing designs |
| Low 0.75 mm profile | Supports ultra-thin end equipment such as ultrabooks and tablet adapters where Z-height is space-constrained |
Applications
| Notebook PC Power Management | USB-C PD Adapter Switching |
|---|---|
Use Scenario: High-side main system power switch controlling 12 V or 20 V input rails in ultrabook platforms with tight thermal budgets. IC Role / Device Role / Timing Role: P-channel load switch providing controlled inrush limiting and reverse-polarity protection. Use Value: 0.011 Ω RDS(on) minimizes voltage drop and self-heating during sustained 30–40 A loads, extending battery runtime. | Use Scenario: Secondary-side synchronous rectification or output load switching in compact 65 W USB-C PD adapters. IC Role / Device Role / Timing Role: Logic-level P-channel MOSFET used in constant-voltage regulation loop with fast turn-off for overcurrent shutdown. Use Value: 23 nC Qg and 12 ns fall time support precise 500 kHz–1 MHz control timing, improving adapter efficiency above 94 %. |
| Industrial 24 V DC Load Switch | Point-of-Load (POL) Backup Switch |
Use Scenario: Remote-controlled power gating for PLC I/O modules operating from 24 V industrial bus with surge immunity requirements. IC Role / Device Role / Timing Role: High-reliability load switch with integrated body diode for freewheeling during inductive load turn-off. Use Value: 31.25 mJ single-pulse avalanche energy rating withstands repetitive 24 V line transients without failure. | Use Scenario: Seamless switchover between primary and backup 5 V/3.3 V rails in telecom baseband cards requiring <100 ns interruption. IC Role / Device Role / Timing Role: Ultra-low-RDS(on) P-channel switch enabling near-zero dropout and fast transition via gate driver control. Use Value: 0.0195 Ω RDS(on) at -4.5 V allows direct microcontroller GPIO drive while maintaining <10 mV dropout at 10 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR466DP-T1-GE3 | Same PowerPAK 1212-8S package; -30 V rating; higher RDS(on) (0.014 Ω @ -10 V); lower Qg (18.5 nC) | Better suited for higher-frequency switching (>1 MHz) where gate drive loss dominates conduction loss | Select when prioritizing switching efficiency over conduction loss in adapter SMPS secondary side |
| IRF7470PBF | SO-8 package; -30 V; higher RDS(on) (0.022 Ω @ -10 V); larger footprint (5 mm × 6 mm); RthJA = 62 °C/W | Compatible with legacy SO-8 layouts but requires PCB redesign and sacrifices thermal performance | Choose only for drop-in replacement in existing SO-8 designs where board rework is prohibited |
Compared with SiR466DP-T1-GE3, SIS439DNT-T1-GE3 delivers lower conduction loss for high-current DC loads; versus IRF7470PBF, it offers 3× better thermal resistance and 40 % smaller footprint-critical for space-constrained portable power designs.
Availability
SIS439DNT-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, USB-C PD adapter switching, and industrial 24 V DC load switching requiring stable component supply across production lifecycles.
Supply support for SIS439DNT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS439DNT-T1-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered specifically for high-current, low-voltage load switching in space- and thermally-constrained computing and adapter applications.
FAQ
What is the maximum continuous drain current rating for the SIS439DNT-T1-GE3 at 70 °C case temperature?
The SIS439DNT-T1-GE3 supports -43.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits-not silicon capability-and assumes adequate PCB copper area for heat spreading. Derating curves in the datasheet confirm linear reduction from -50 A at 25 °C to -43.5 A at 70 °C.
Does the SIS439DNT-T1-GE3 require a gate driver for 3.3 V microcontroller operation?
No, the SIS439DNT-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its VGS(th) range of -1.2 V to -2.8 V ensures full enhancement at -3.3 V, and its RDS(on) of 0.0195 Ω at -4.5 V confirms strong conduction even with 3.3 V logic swing. Verified in the "On-Resistance vs. Gate-to-Source Voltage" characteristic curve.
What is the avalanche energy rating of the SIS439DNT-T1-GE3, and under what test conditions is it specified?
The SIS439DNT-T1-GE3 has a single-pulse avalanche energy rating of 31.25 mJ, measured under conditions of L = 0.1 mH, IAS = -25 A, and TJ = 25 °C. This value is guaranteed per JEDEC JESD22-A115 and confirmed by 100 % UIS testing during production. It applies to unclamped inductive switching events common in load-switch turn-off.
How does the PowerPAK 1212-8S package of the SIS439DNT-T1-GE3 improve thermal performance compared to standard SO-8?
The PowerPAK 1212-8S package of the SIS439DNT-T1-GE3 achieves a maximum RthJC of 2.4 °C/W-over 2.5× better than typical SO-8 MOSFETs (~6–8 °C/W). This results from dual-sided exposed drain terminals and optimized copper clip construction, enabling >20 W power dissipation with minimal heatsinking. The 3.3 mm × 3.3 mm footprint also reduces board area by 55 % versus SO-8.
Is the SIS439DNT-T1-GE3 suitable for reverse polarity protection in 12 V automotive accessory circuits?
The SIS439DNT-T1-GE3 is not recommended for 12 V automotive reverse polarity protection due to its -30 V VDS rating, which provides insufficient margin against load-dump transients (up to +40 V per ISO 7637-2). While functional in steady-state 12 V systems, its absolute maximum VDS leaves no headroom for surge events. For automotive use, a -40 V or -60 V rated P-channel MOSFET is required.
SIS439DNT-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2135 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52.1W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SIS439DNT-T1-GE3 FAQ
1.How can I place an order for SIS439DNT-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS439DNT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS439DNT-T1-GE3 reliable?
The price and inventory of SIS439DNT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS439DNT-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS439DNT-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS439DNT-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS439DNT-T1-GE3?
SIS439DNT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS439DNT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS439DNT-T1-GE3?
For technical support, including SIS439DNT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS439DNT-T1-GE3 requirements.
6.How does Aetrix verify that SIS439DNT-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS439DNT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS439DNT-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS439DNT-T1-GE3?
All SIS439DNT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS439DNT-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS439DNT-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS439DNT-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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