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Vishay Siliconix SIS444DN-T1-GE3
- Part No.:
- SIS444DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS444DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,933
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Product details
Overview
SIS444DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, rated for 35 A continuous drain current at TC = 25 °C, with RDS(on) of 3.3 mΩ at VGS = 10 V and 4.3 mΩ at VGS = 4.5 V, used as a high-efficiency load switch in industrial motor control and OR-ing circuits.
For engineers reviewing the SIS444DN-T1-GE3 datasheet, SIS444DN-T1-GE3 pinout, SIS444DN-T1-GE3 application, or SIS444DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on), 33.5 nC total gate charge at 4.5 V drive, 100 % Rg and UIS tested reliability, and thermal performance enabled by exposed-drain PowerPAK 1212-8 packaging.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and synchronous rectification. Its gate threshold voltage (1.2–2.3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 360 pF Crss and 3065 pF Ciss support stable operation under high-frequency PWM control.
The device features an integrated body diode with 0.7–1.1 V forward voltage at 3 A and 21–40 ns reverse recovery time, enabling efficient freewheeling in half-bridge topologies. Thermal design leverages the PowerPAK 1212-8's 1.9 °C/W typical junction-to-case resistance and exposed copper drain pad for direct PCB heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 24 V rail applications |
| RDS(on) @ VGS = 10 V | 3.3 mΩ - Enables <1 W conduction loss at 18 A continuous current |
| RDS(on) @ VGS = 4.5 V | 4.3 mΩ - Supports logic-level gate drive without level-shifting circuitry |
| Qg | 33.5 nC - Low gate charge reduces driver power and switching losses at 500 kHz+ |
| ID (continuous) | 35 A at TC = 25 °C - High current capability with minimal heatsinking required |
| RthJC | 1.9 °C/W - Enables >30 W power dissipation with modest PCB copper area |
| VGS(th) | 1.2–2.3 V - Ensures turn-on with standard microcontroller GPIO outputs |
Pinout & Package
PowerPAK® 1212-8 is a leadless, surface-mount package with exposed drain pad on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 1.05 mm. The package uses copper substrate construction to minimize thermal resistance and maximize power density.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to exposed bottom-side copper pad for thermal and electrical conduction |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins for minimized gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency switching efficiency |
| 100 % Rg and UIS tested | Ensures robustness against gate overvoltage and unclamped inductive switching stress |
| Exposed drain pad | Provides direct thermal path to PCB, achieving 1.9 °C/W RthJC without external heatsink |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| PowerPAK 1212-8 footprint | 40 % smaller than TSSOP-8 with >2× die area and 20× better thermal performance than TSSOP-8 |
Applications
| Motor Control | Industrial Load Switch |
|---|---|
Use Scenario: Brushed DC motor H-bridge driver in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and speed via PWM at 20–100 kHz. Use Value: 3.3 mΩ RDS(on) limits I²R loss to <1.2 W at 20 A, reducing thermal derating and enabling compact enclosure design. |
Use Scenario: Hot-swap power sequencing in programmable logic controller backplanes. IC Role / Device Role / Timing Role: OR-ing FET managing redundant 24 V power supplies with controlled turn-on slew rate. Use Value: 4.3 mΩ RDS(on) at 4.5 V gate drive eliminates need for external level shifter, simplifying BOM and layout. |
| OR-ing Circuit | DC-DC Converter Sync Rectifier |
Use Scenario: Redundant 12 V input supply for telecom base station power management units. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing reverse-current blocking and low-loss forward conduction. Use Value: Body diode VSD of 0.7–1.1 V and 21 ns trr enable efficient passive OR-ing without active controllers. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V buck converter for server VRMs. IC Role / Device Role / Timing Role: High-side or low-side sync rectifier driven by gate driver IC with 4.5 V output. Use Value: 33.5 nC Qg allows full turn-on within 30 ns using 1 Ω gate resistor, minimizing dead-time losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR466DP-T1-GE3 | Higher RDS(on): 4.0 mΩ @ 10 V; larger PowerPAK 1212-8 dual-die package; 42 nC Qg | Targeted for higher-voltage 40 V systems; less suitable for 24 V logic-level drive | Select when higher avalanche energy rating (EAS = 32 mJ) is required over lowest RDS(on) |
| IRLML6344TRPBF | Smaller TSOP-6 package; 4.5 mΩ @ 4.5 V; 12.5 nC Qg; lower ID rating (4.3 A) | Intended for low-power portable electronics; insufficient for >10 A load switching | Choose only for space-constrained sub-5 A applications where thermal performance is secondary |
Compared with SiR466DP-T1-GE3 and IRLML6344TRPBF, the SIS444DN-T1-GE3 delivers the lowest RDS(on) and highest current rating in the PowerPAK 1212-8 form factor, making it optimal for industrial 20–35 A load switching where conduction loss and thermal management are critical.
Availability
SIS444DN-T1-GE3 is available at Aetrix Electronics and suitable for industrial motor control, OR-ing power supplies, DC-DC converter synchronous rectification, and hot-swap load switching requiring stable component supply across multi-year production cycles.
Supply support for SIS444DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIS444DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, low-voltage switching in industrial automation, telecom infrastructure, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for the SIS444DN-T1-GE3?
The SIS444DN-T1-GE3 is rated for 35 A continuous drain current at case temperature TC = 25 °C, and 24.9 A at ambient temperature TA = 25 °C with 1" × 1" FR4 board mounting. Derating applies above 25 °C per the published current vs. case temperature curve, with 20 A supported at TC = 70 °C.
Does the SIS444DN-T1-GE3 support 3.3 V logic-level gate drive?
Yes, the SIS444DN-T1-GE3 has a gate threshold voltage range of 1.2–2.3 V and specified RDS(on) of 4.3 mΩ at VGS = 4.5 V, enabling reliable turn-on with standard 3.3 V microcontroller outputs. Its low Qg (33.5 nC) further ensures fast switching without excessive gate drive power.
What is the thermal resistance from junction to ambient for the SIS444DN-T1-GE3?
The SIS444DN-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 33 °C/W under standard 1" × 1" FR4 board conditions (t ≤ 10 s). With optimized PCB copper area, RthJA can be reduced significantly-down to ~24 °C/W typical-while its junction-to-case (RthJC) remains 1.9 °C/W steady-state.
Is the SIS444DN-T1-GE3 suitable for synchronous rectification in DC-DC converters?
Yes, the SIS444DN-T1-GE3 is widely used for synchronous rectification due to its low RDS(on), fast switching (td(on) = 14 ns at 10 V drive), and low Qgd (13.8 nC), which minimizes shoot-through risk. Its body diode parameters (VSD = 0.7–1.1 V, trr = 21–40 ns) also support reliable freewheeling during dead-time intervals.
What package type does the SIS444DN-T1-GE3 use, and how is it mounted?
The SIS444DN-T1-GE3 uses the PowerPAK® 1212-8 single package-a leadless, surface-mount format with exposed drain pad on the bottom side. It requires reflow soldering per JEDEC J-STD-020 profile (peak 240 °C, 20–40 s); manual soldering with iron is not recommended due to thermal mass and leadless construction.
SIS444DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 102 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3065 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS444DN-T1-GE3 FAQ
1.How can I place an order for SIS444DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS444DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS444DN-T1-GE3 reliable?
The price and inventory of SIS444DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS444DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS444DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS444DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS444DN-T1-GE3?
SIS444DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS444DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS444DN-T1-GE3?
For technical support, including SIS444DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS444DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS444DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS444DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS444DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS444DN-T1-GE3?
All SIS444DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS444DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS444DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS444DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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