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Vishay Siliconix SIS448DN-T1-GE3
- Part No.:
- SIS448DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS448DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,766
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Product details
Overview
SIS448DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a leadless PowerPAK 1212-8 package, optimized for PWM switching with RDS(on) = 0.0056 Ω at VGS = 10 V and 35 A continuous drain current at TC = 25 °C, widely used in high-side VRM and POL applications in notebook PCs.
For engineers reviewing the SIS448DN-T1-GE3 datasheet, SIS448DN-T1-GE3 pinout, SIS448DN-T1-GE3 application, or SIS448DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on), 12 nC gate charge at 4.5 V, 100 % UIS and Rg tested qualification, and thermal performance enabled by the exposed-drain PowerPAK 1212-8 footprint.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its design supports high-frequency synchronous rectification and PWM control in compact DC/DC converters where thermal management is constrained.
The device features a robust body diode with trr = 20–40 ns and Qrr = 10–20 nC, enabling efficient reverse recovery in high-side configurations. It is fully characterized for operation up to TJ = 150 °C and rated for 100 % UIS testing per JEDEC JESD22-A114.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V output POL stages. |
| RDS(on) @ 10 V | 0.0056 Ω - Enables <175 mW conduction loss at 10 A, critical for high-efficiency VRM designs. |
| RDS(on) @ 4.5 V | 0.0075 Ω - Ensures strong enhancement-mode turn-on with standard 5 V logic-level gate drivers. |
| Qg @ 4.5 V | 12 nC - Low gate charge reduces drive power and enables >1 MHz switching without excessive driver loss. |
| ID (continuous) | 35 A @ TC = 25 °C - High current capability supported by low RθJC = 1.9 °C/W and exposed-drain thermal path. |
| trr / Qrr | 20–40 ns / 10–20 nC - Fast, low-charge body diode minimizes shoot-through risk and improves light-load efficiency. |
| PD @ TC = 25 °C | 52 W - High power dissipation rating enabled by PowerPAK 1212-8's ultra-low junction-to-case thermal resistance. |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount package with exposed copper drain pad on bottom side; 3.30 mm × 3.30 mm footprint; 1.05 mm height; RoHS-compliant, halogen-free, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Low-side reference node; internally connected to source metallization; requires low-inductance ground plane routing. |
| 2 (S) | Source | Dual-source connection for reduced source inductance and improved current sharing in parallel layouts. |
| 3 (G) | Gate | Control terminal; driven by external PWM controller; 0.3–1.4 Ω gate resistance limits ringing and EMI. |
| 4 (S) | Source | Third source terminal; completes low-impedance source return path for high di/dt switching events. |
| 5 (D) | Drain | Main power output node; electrically tied to exposed bottom copper pad; primary thermal conduction path to PCB. |
| 6 (D) | Drain | Second drain terminal; enhances current handling and reduces package inductance in high-frequency operation. |
| 7 (D) | Drain | Third drain terminal; supports symmetric current distribution across the die and improves thermal spreading. |
| 8 (D) | Drain | Fourth drain terminal; completes full drain interconnect; maximizes thermal interface area to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.0056 Ω RDS(on) at 10 V in 3.3 mm² footprint-reducing conduction loss by >30 % vs. comparable SO-8 MOSFETs. |
| PWM-optimized structure | Minimizes Qgd/Qgs ratio (3.6/3.7 nC) to suppress Miller-induced turn-on and improve hard-switching reliability. |
| 100 % Rg tested | Guarantees gate resistance between 0.3–1.4 Ω-ensuring consistent drive timing and predictable EMI behavior. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 20 A and EAS = 20 mJ. |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC-enabling use in environmentally regulated industrial and computing systems. |
Applications
| VRM High-Side Switch | POL DC/DC Converter |
|---|---|
Use Scenario: Primary switching element in multiphase voltage regulator modules supplying CPU core power in thin-profile notebooks. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated PWM controller; operates at 300–1000 kHz with tight dead-time control. Use Value: 0.0056 Ω RDS(on) and 12 nC Qg at 4.5 V enable >95 % efficiency at 25 A load while maintaining thermal rise below 5 °C above board temperature. |
Use Scenario: Point-of-load buck converter delivering stable 1.2 V/20 A to FPGA or ASIC in space-constrained embedded systems. IC Role / Device Role / Timing Role: Main power switch in integrated power stage; co-located with driver IC and inductor on compact 4-layer PCB. Use Value: PowerPAK 1212-8's 1.9 °C/W RθJC allows full 35 A rating without heatsink-reducing BOM count and board area by 40 % vs. TSSOP-8 alternatives. |
| Notebook PC Power Management | High-Density Server VRMs |
Use Scenario: Dual-phase high-side switch in ultrabook motherboard power delivery network with strict height constraints (<1.2 mm). IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET paired with complementary low-side device; driven by integrated PWM controller with adaptive dead-time. Use Value: 1.05 mm profile and 3.3 mm × 3.3 mm footprint meet mechanical envelope requirements while sustaining 19 A at TA = 70 °C ambient. |
Use Scenario: High-current phase-leg switch in 48 V–12 V intermediate bus converter for AI accelerator cards. IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive UIS stress during transient load steps and hot-plug events. Use Value: 100 % UIS-tested rating of 20 mJ ensures no degradation after >106 cycles under 12 V/30 A load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 0.0038 Ω @ 10 V; higher Qg = 42 nC; PowerPAK 5x6 package (5.0 mm × 6.0 mm). | Lower conduction loss but larger footprint and slower switching; better for <500 kHz, high-current (>50 A) applications. | Select when minimizing I²R loss dominates over layout area and switching loss; verify gate drive capability for 42 nC charge. |
| IRLHS6242PBF | RDS(on) = 0.0065 Ω @ 4.5 V; Qg = 14.5 nC; SO-8 package; RθJA = 50 °C/W (vs. 24 °C/W for SIS448DN-T1-GE3). | Compatible pinout but significantly higher thermal resistance; unsuitable for >15 A continuous operation without heatsink. | Use only in legacy SO-8 footprints where re-layout is prohibited; expect ~3× higher junction temperature rise at same current. |
Compared with SiR872DP-T1-GE3 and IRLHS6242PBF, SIS448DN-T1-GE3 delivers optimal balance of ultra-low RDS(on), compact 3.3 mm² footprint, and industry-leading thermal performance-making it preferred for high-density, high-frequency VRM and POL designs where board space and thermal headroom are critically constrained.
Availability
SIS448DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, VRM high-side switching, and POL DC/DC converter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.
Supply support for SIS448DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIS448DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-frequency, high-current DC/DC conversion in space- and thermally-constrained computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SIS448DN-T1-GE3 at 70 °C case temperature?
The SIS448DN-T1-GE3 is rated for 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is sustained by its low RθJC = 1.9 °C/W and robust die construction, enabling reliable operation in thermally demanding POL applications without derating below 35 A until TC exceeds 70 °C.
Does SIS448DN-T1-GE3 support 4.5 V gate drive in logic-level applications?
Yes, SIS448DN-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 0.0075 Ω (max) at VGS = 4.5 V and ID = 7 A, and VGS(th) = 1.0–2.3 V ensures strong enhancement-mode turn-on with standard 5 V microcontroller or PWM controller outputs. Its 12 nC total gate charge at 4.5 V further confirms suitability for logic-level drive.
What is the thermal resistance from junction to ambient for SIS448DN-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the SIS448DN-T1-GE3 has RθJA = 24 °C/W (typical) and 33 °C/W (maximum), per the Thermal Resistance Ratings table. This value assumes surface mounting per Vishay's recommended land pattern; actual performance improves significantly with added copper pour or multilayer thermal planes.
Is SIS448DN-T1-GE3 qualified for repetitive unclamped inductive switching (UIS)?
Yes, SIS448DN-T1-GE3 undergoes 100 % UIS testing per JEDEC JESD22-A114, with ratings of IAS = 20 A and EAS = 20 mJ. This qualification ensures robustness against inductive energy spikes during power-up, load transients, and fault conditions in VRM and POL circuits without requiring external snubbers.
What is the gate-to-source leakage current specification for SIS448DN-T1-GE3?
The gate-to-source leakage current (IGSS) for SIS448DN-T1-GE3 is ±100 nA maximum at VGS = ±20 V and TA = 25 °C, as stated in the Static specifications table. This low leakage supports stable gate biasing and prevents unintended turn-on in high-impedance drive configurations.
SIS448DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1575 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS448DN-T1-GE3 FAQ
1.How can I place an order for SIS448DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS448DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS448DN-T1-GE3 reliable?
The price and inventory of SIS448DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS448DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS448DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS448DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS448DN-T1-GE3?
SIS448DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS448DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS448DN-T1-GE3?
For technical support, including SIS448DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS448DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS448DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS448DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS448DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS448DN-T1-GE3?
All SIS448DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS448DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS448DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS448DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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