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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS452DN-T1-GE3

Name: SIS452DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS452DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS452DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS452DN-T1-GE3.pdf

Description:: MOSFET N-CH 12V 35A PPAK1212-8

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Product details

Overview

SIS452DN-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, rated for 12 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 3.25 mΩ R_DS(on) at V_GS = 10 V. It delivers high-efficiency switching in point-of-load (POL) and DC/DC converter applications where low conduction loss and fast gate charge response are critical.

For engineers reviewing the SIS452DN-T1-GE3 datasheet, SIS452DN-T1-GE3 pinout, SIS452DN-T1-GE3 application, or SIS452DN-T1-GE3 equivalent, key selection criteria include its 13.5 nC total gate charge at 4.5 V drive, 1.9 °C/W junction-to-case thermal resistance, 100% UIS-tested ruggedness, halogen-free and RoHS-compliant construction, and verified performance under pulsed drain currents up to 100 A.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low-voltage, high-current synchronous rectification and power switching. Its gate threshold voltage (1.2–2.2 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drivers, while its 480 pF reverse transfer capacitance (Crss) and 20 ns typical turn-off delay support high-frequency operation up to 1 MHz in buck converters.

The device integrates a body diode with 0.8–1.2 V forward voltage at 10 A and 21–35 ns reverse recovery time, enabling efficient freewheeling in non-synchronous topologies. Its PowerPAK® 1212-8 package features exposed drain pads on both top and bottom surfaces, delivering ultra-low thermal impedance-1.9 °C/W junction-to-case-and eliminating reliance on PCB copper for primary heat extraction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage compatible with 12 V input rails and 5 V logic-level gate drive.
R_DS(on) @ V_GS = 10 V	3.25 mΩ - Enables ≤ 2.3 W conduction loss at 27 A, reducing thermal load in compact POL modules.
R_DS(on) @ V_GS = 4.5 V	4.8 mΩ - Ensures stable on-resistance with 3.3 V microcontroller GPIOs or low-voltage PWM controllers.
Q_g @ V_GS = 4.5 V	13.5 nC - Supports efficient 500 kHz–1 MHz switching with minimal gate driver power dissipation.
I_D (continuous, T_C = 25 °C)	35 A - Package-limited current rating suitable for high-density 20–30 A output stages without external heatsinking.
R_thJC	1.9 °C/W - Enables direct thermal coupling to PCB copper pour or metal-core substrate, simplifying thermal design.
UIS Rating	100% tested - Guarantees survivability under inductive switching stress without snubbers in DC/DC designs.

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with dual-side thermal access. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm. Exposed drain pad occupies the full bottom footprint and connects to pins 4–8; source and gate terminals are on the top side.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate-source voltage; requires <2.2 Ω series resistance to damp ringing during fast switching.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground plane with low-inductance layout.
3 (S)	Source	Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing.
4–8 (D)	Drain	High-current output node; all five pins connect to a single internal drain metallization and exposed bottom copper pad.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) per mm² among 12 V MOSFETs in 3.3 mm × 3.3 mm footprint, enabling higher power density than SO-8 or TSOP-6 alternatives.
100 % R_g tested	Ensures gate resistance between 0.2–2.2 Ω across production lot, guaranteeing consistent switching speed and EMI behavior.
Exposed dual-side drain	Provides two independent thermal paths-top-side via solder mask opening and bottom-side via direct copper contact-reducing effective R_thJA by >50 % vs. standard TSSOP-8.
Halogen-free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC; eliminates brominated flame retardants without compromising package mechanical integrity.
100 % UIS tested	Validates avalanche energy handling of 45 mJ per pulse, allowing safe operation in hard-switched or fault-prone DC/DC topologies without added protection circuitry.

Applications

Point-of-Load (POL) Regulators	DC/DC Buck Converters
Use Scenario: High-current, low-voltage regulation (e.g., 12 V input to 1.2 V/30 A CPU core supply) on server motherboard VRMs. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with gate drive synchronized to low-side FET. Use Value: 3.25 mΩ R_DS(on) minimizes I²R losses, while 13.5 nC Q_g reduces gate drive power and enables tight duty-cycle control below 10 %.	Use Scenario: Isolated or non-isolated step-down conversion in telecom power shelves and industrial PLC power supplies. IC Role / Device Role / Timing Role: Primary-side power switch in fixed-frequency or adaptive-on-time buck controller circuits. Use Value: 100 % UIS testing ensures reliability during output short-circuit events; 1.9 °C/W R_thJC allows sustained 25 A operation on 2-layer FR4 without thermal derating.
Hot-Swap Controllers	OR-ing Diode Replacements
Use Scenario: Inrush current limiting and fault isolation in redundant 12 V backplane power distribution units. IC Role / Device Role / Timing Role: Low-side current-limiting switch controlled by hot-swap IC with current-sense feedback. Use Value: 4.8 mΩ R_DS(on) at 4.5 V gate drive supports accurate current sensing down to 10 mV drop; 35 A package rating handles 2× peak inrush.	Use Scenario: Active OR-ing in dual-input 12 V power systems (e.g., battery + adapter) for seamless switchover and reverse-current blocking. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET replacing Schottky diodes in ideal diode controllers. Use Value: Body diode V_SD = 0.8–1.2 V enables fast turn-on; 21 ns trr prevents shoot-through during switchover; low Q_rr (10–20 nC) reduces switching loss.

Point-of-Load (POL) Regulators

DC/DC Buck Converters

Use Scenario: High-current, low-voltage regulation (e.g., 12 V input to 1.2 V/30 A CPU core supply) on server motherboard VRMs.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with gate drive synchronized to low-side FET.

Use Value: 3.25 mΩ R_DS(on) minimizes I²R losses, while 13.5 nC Q_g reduces gate drive power and enables tight duty-cycle control below 10 %.

Use Scenario: Isolated or non-isolated step-down conversion in telecom power shelves and industrial PLC power supplies.

IC Role / Device Role / Timing Role: Primary-side power switch in fixed-frequency or adaptive-on-time buck controller circuits.

Use Value: 100 % UIS testing ensures reliability during output short-circuit events; 1.9 °C/W R_thJC allows sustained 25 A operation on 2-layer FR4 without thermal derating.

Hot-Swap Controllers

OR-ing Diode Replacements

Use Scenario: Inrush current limiting and fault isolation in redundant 12 V backplane power distribution units.

IC Role / Device Role / Timing Role: Low-side current-limiting switch controlled by hot-swap IC with current-sense feedback.

Use Value: 4.8 mΩ R_DS(on) at 4.5 V gate drive supports accurate current sensing down to 10 mV drop; 35 A package rating handles 2× peak inrush.

Use Scenario: Active OR-ing in dual-input 12 V power systems (e.g., battery + adapter) for seamless switchover and reverse-current blocking.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET replacing Schottky diodes in ideal diode controllers.

Use Value: Body diode V_SD = 0.8–1.2 V enables fast turn-on; 21 ns trr prevents shoot-through during switchover; low Q_rr (10–20 nC) reduces switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	12 V V_DS, 4.0 mΩ R_DS(on) @ 4.5 V, 15.8 nC Q_g, same PowerPAK® 1212-8 package.	Higher gate charge increases driver loss at >1 MHz; slightly higher R_DS(on) raises conduction loss in 30 A+ designs.	Select when prioritizing cost over peak efficiency in <500 kHz applications with moderate thermal margin.
IRLML6344TRPBF	20 V V_DS, 4.5 mΩ R_DS(on) @ 4.5 V, 12.5 nC Q_g, SOT-23 package (0.95 mm height, 2.9 mm × 1.6 mm).	Lower current rating (4.3 A) and higher R_thJA (120 °C/W) limit use to sub-5 A loads; smaller footprint trades thermal performance for space savings.	Select only for ultra-compact, low-power (<2 A) applications where board area is more constrained than thermal budget.

Compared with SiR466DP-T1-GE3 and IRLML6344TRPBF, the SIS452DN-T1-GE3 provides the lowest R_DS(on) and highest current capability in the PowerPAK® 1212-8 form factor, making it optimal for high-efficiency, high-current POL and DC/DC designs where thermal headroom and gate drive simplicity are critical.

Availability

SIS452DN-T1-GE3 is available at Aetrix Electronics and suitable for point-of-load regulators, DC/DC buck converters, and hot-swap controllers requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SIS452DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIS452DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV low-voltage MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIS452DN-T1-GE3 at 70 °C case temperature?

The SIS452DN-T1-GE3 is rated for 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper thermal management per Vishay Application Note AN822. The value remains unchanged from its 25 °C rating due to the device's thermal design and PowerPAK® 1212-8 package construction, which maintains low junction-to-case resistance across operating temperatures.

Does SIS452DN-T1-GE3 support 3.3 V logic-level gate drive?

Yes, the SIS452DN-T1-GE3 supports 3.3 V logic-level gate drive. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.2 V, ensuring reliable turn-on with standard 3.3 V microcontrollers or PWM controllers. At V_GS = 4.5 V, it achieves 4.8 mΩ R_DS(on), enabling efficient operation in low-voltage gate drive architectures without level-shifting circuitry.

What is the thermal resistance from junction to ambient (R_thJA) for SIS452DN-T1-GE3 on a standard FR4 board?

The SIS452DN-T1-GE3 has a typical R_thJA of 24 °C/W and maximum of 33 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions (single-sided copper, no heatsink). With optimized PCB layout-including extended drain copper pour-the effective R_thJA can be reduced significantly, as demonstrated in Vishay's AN822 thermal characterization data.

Is SIS452DN-T1-GE3 suitable for synchronous rectification in a 12 V input buck converter?

Yes, the SIS452DN-T1-GE3 is well-suited for synchronous rectification in 12 V input buck converters. Its low 3.25 mΩ R_DS(on) at 10 V gate drive minimizes conduction loss, while its 21–35 ns body diode reverse recovery time and 10–20 nC Q_rr enable clean commutation with minimal shoot-through risk. The device's 100 % UIS testing further ensures robustness during transient overload conditions common in synchronous topologies.

What does "T1-GE3" signify in the part number SIS452DN-T1-GE3?

The "T1-GE3" suffix in SIS452DN-T1-GE3 indicates tape-and-reel packaging (T1) and Vishay's green environmental compliance designation (GE3), confirming lead (Pb)-free and halogen-free construction per IEC 61249-2-21 and RoHS Directive 2002/95/EC. This suffix also denotes that the device is qualified for surface-mount reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C.

SIS452DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.25mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS452DN-T1-GE3 FAQ

1.How can I place an order for SIS452DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS452DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS452DN-T1-GE3 reliable?

The price and inventory of SIS452DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS452DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS452DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS452DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS452DN-T1-GE3?

SIS452DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS452DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS452DN-T1-GE3?

For technical support, including SIS452DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS452DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS452DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS452DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS452DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS452DN-T1-GE3?

All SIS452DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS452DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS452DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS452DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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